IRFI4410ZGPbF
2www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.91mH
RG = 25Ω, IAS = 26A, VGS =10V. Part not recommended for use
above this value.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Static @ T
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
Drain-to-Source Breakdown Voltage 100 ––– ––– V
V(BR)DSS
/T
J Breakdown Voltage Temp. Coefficient ––– 95 –––
RDS(on) Static Drain-to-Source On-Resistance ––– 7.9 9.3 m
V
Gate Threshold Voltage 2.0 ––– 4.0 V
I
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
Internal Gate Resistance ––– 0.9 –––
Dynamic @ T
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 80 ––– ––– S
Q
Total Gate Charge ––– 81 110 nC
Q
Gate-to-Source Charge ––– 18 –––
Q
Gate-to-Drain ("Miller") Charge ––– 23 –––
t
Turn-On Delay Time ––– 15 ––– ns
trRise Time ––– 27 –––
t
Turn-Off Delay Time ––– 43 –––
t
Fall Time ––– 30 –––
C
Input Capacitance ––– 4910 ––– pF
Coss Output Capacitance ––– 330 –––
C
Reverse Transfer Capacitance ––– 15 0 –––
C
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 420 –––
C
eff. (TR) Effective Output Capacitance (Time Related) ––– 680 –––
I
Continuous Source Current ––– ––– 43 A
(Body Diode)
I
Pulsed Source Current ––– ––– 170 A
(Body Diode)
c
VSD D iode Forw ar d V oltag e – –– ––– 1.3 V
t
Reverse Recovery Time ––– 47 71 ns T
= 25°C V
= 85V,
Qrr Reverse Recovery Charge ––– 110 160 nC TJ = 25°C
e
I
Reverse Recovery Current ––– 2.5 ––– A T
= 25°C
t
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 10V
e
V
= 0V
VDS = 50V
Conditions
VDS = 50V, ID = 26A
I
= 26A
VGS = 10V
e
VDD = 65V
ID = 26A
R
= 2.7
VDS = VGS
, ID = 150μA
VDS = 100V, VGS = 0V
V
= 100V, V
= 0V, T
= 125°C
V
= 50V
VGS = 20V
VGS = -20V
Conditions
V
= 0V, I
= 250μA
Reference to 25°C, I
D = 5mA
e
VGS = 10V, ID = 26A
e
p-n junction diode.
TJ = 25°C, IS = 26A, VGS
= 0V
e
ƒ = 1.0MHz
VGS = 0V, VDS
= 0V to 80V
h
, See Fig.11
V
= 0V, V
= 0V to 80V
g
Conditions
MOSFET symbol
showing the
integral reverse