DMD1029
DMD1029-A
Document Number 6859
Issue 3
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Parameter Test Conditions Min. Typ. Max. Unit
70
7
7
1 7
5.6
0.1
16
60
20:1
420
210
17.5
VGS = 0 ID= 100mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 6A
ID= 10mA VDS = VGS
PO= 350W
VDS = 28V IDQ = 2A
f = 175MHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
µA
V
mhos
V
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RTHj–case Thermal Resistance Junction – Case Max. 0.2°C / W
0.4 °C / W -A Version
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
TOTAL DEVICE
PER SIDE
PER SIDE
BVDSS
IDSS
IGSS
VGS(th)
gfs
VGS(th)match
GPS
η
VSWR
Ciss
Coss
Crss