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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD439/441
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Volta ge : BD439
: BD441 60
80 V
V
VCES Collector-Emitter Voltage: BD439
: BD441 60
80 V
V
VCEO Collector-Emitter Voltage: BD439
: BD441 60
80 V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
P C Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Tem perature - 65 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD439
: BD441 IC = 100mA, IB = 0 60
80 V
V
ICBO Collector Cut-off Current : BD439
: BD441 VCB = 60V, IE = 0
VCB = 80V, IE = 0 100
100 µA
µA
ICES Collector Cut-off Current : BD439
: BD4 41 VCE = 60V, VBE = 0
VCE = 80V, VBE = 0 100
100 µA
µA
IEBO Emitt e r Cut- o ff Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain : BD439
: BD4 41
: BD4 39
: BD4 41
: BD4 39
: BD4 41
VCE = 5V, IC = 10mA
VCE =1V, IC = 500mA
VCE = 1V, IC = 2A
20
15
40
40
25
15
130
130
140
140
VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.8 V
VBE(on) * Base-Emitter ON Voltage VCE = 5V, IC = 10mA
VCE = 1V, IC = 2A 0.58 1.5 V
V
fT Current Gain Bandwidth Product VCE = 1V, IC = 250mA 3 MHz
BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
BD439/441
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10
1
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE = 1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10 100
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
110100
0.1
1
10
1µs
10µs
100
µ
s
1ms
10ms
IC MAX. (Pulsed)
BD441
BD439
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD439/441
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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Preliminary First Production This datasheet contains preliminary data, and
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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