HY5DU12422CLTP-LI - SK Hynix

This document is a general product description and is subject t o change without notice. Hynix Semiconductor do es not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.2 / Feb. 2006 1

512Mb DDR SDRAM

HY5DU12422C(L)TP-xI

HY5DU12822C(L)TP-xI

HY5DU121622C(L)TP-xI

Rev. 1.2 / Feb. 2006 2

1HY5DU12422C(L)TP-xI

HY5DU12822C(L)TP-xI

HY5DU121622C(L)TP-xI

Revision History

Revision No. History Draft Date Remark

1.0 First Version Release Jun. 2005

1.1 IDD specification revised July 2005

1.2 IDD6 specification revised Feb. 2006

Rev. 1.2 / Feb. 2006 3

1HY5DU12422C(L)TP-xI

HY5DU12822C(L)TP-xI

HY5DU121622C(L)TP-xI

DESCRIPTION

The HY5DU12422C(L)TP, HY5DU12822C(L)TP and HY5DU121622C(L)TP are a 536,870,912-bit CMOS Double Data

Rate(DDR) Synchronous DRAM, ideally su ited for the main memory applications which requires large memory density

and high bandwidth.

This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the

clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,

Data strobes and W rite data masks inputs ar e sampled on both rising and falling edges of it. The data paths are inter-

nally pipelined and 2 -bit pr efetched to achieve very high bandwidth. All input and output voltage lev els ar e compatible

with SSTL_2.

FEATURES

•VDD, VDDQ = 2.5V ±0.2V for DDR200, 266, 333

VDD, VDDQ = 2.6V ±0.1V for DDR400

• All inputs and outputs are compatible with SSTL_2

interface

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous - data transaction aligned to

bidirectional data strobe (DQS)

• x16 device has two bytewide data strobes (UDQS,

LDQS) per each x8 I/O

• Data outputs on DQS edges when read (edged DQ)

Data inputs on DQS centers when write (centered

DQ)

• On chip DLL align DQ and DQS transition with CK

transition

• DM mask write data-in at the both rising and falling

edges of the data strobe

• All addresses and control inputs except data, data

strobes and data ma sks latched on the rising edges

of the clock

• Programmable CAS latency 2/2.5 (DDR200, 266,

333) and 3 (DDR400) supported

• Programmable burst length 2 / 4 / 8 with both

sequential and interleave mode

• Internal four bank operations with single pulsed

/RAS

• Auto refresh and self refresh supported

• tRAS lock out function supported

• 8192 refresh cycles / 64ms

• JEDEC standard 400mil 66pin TSOP-II with 0.65mm

pin pitch

•Lead free (ROHS* Compliant)

• Industrial temperature supported: -40 to 85oC

ORDERING INFORMATION

* x means speed grade

Part No. Configuration Package

HY5DU12422C(L)TP-x*I 128M x 4 400mil

66pin

TSOP-II

(Lead free)

HY5DU12822C(L)TP-x*I 64M x 8

HY5DU121622C(L)TP-x*I 32M x 16

OPERATING FREQUENCY

Grade Clock Rate Remark

(CL-tRCD-tRP)

-D43 200MHz@CL3 DDR400B (3-3-3)

- J 133MHz@CL2 166MHz@CL2.5 DDR333 (2.5-3-3)

- K 133MHz@CL2 133MHz@CL2.5 DDR266A (2-3-3)

- H 100MHz@CL2 133MHz@CL2.5 DDR266B (2.5-3-3)

- L 100MHz@CL2 DDR200 (2-2-2)

*ROHS (Restriction Of Hazardous Substance)

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PIN CONFIGURATION

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

NC

VDDQ

LDQS

NC

VDD

NC

LDM

/WE

/CAS

/RAS

/CS

NC

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

NC

VSSQ

UDQS

NC

VREF

VSS

UDM

/CK

CK

CKE

NC

A12

A11

A9

A8

A7

A6

A5

A4

VSS

VDD

DQ0

VDDQ

NC

DQ1

VSSQ

NC

DQ2

VDDQ

NC

DQ3

VSSQ

NC

VDDQ

NC

VDD

NC

/WE

/CAS

/RAS

/CS

NC

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

VSS

DQ7

VSSQ

NC

DQ6

VDDQ

NC

DQ5

VSSQ

NC

DQ4

VDDQ

NC

VSSQ

DQS

NC

VREF

VSS

DM

/CK

CK

CKE

NC

A12

A11

A9

A8

A7

A6

A5

A4

VSS

VDD

NC

VDDQ

NC

DQ0

VSSQ

NC

VDDQ

NC

DQ1

VSSQ

NC

VDDQ

NC

VDD

NC

/WE

/CAS

/RAS

/CS

NC

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

VSS

NC

VSSQ

NC

DQ3

VDDQ

NC

VSSQ

NC

DQ2

VDDQ

NC

VSSQ

DQS

NC

VREF

VSS

DM

/CK

CK

CKE

NC

A12

A11

A9

A8

A7

A6

A5

A4

VSS

x16 x8 x4x4 x8 x16

400mil X 875mil

66pin TSOP -II

0.65mm pin pitch

(Lead free)

ROW AND COLUMN ADDRESS TABLE

ITEMS 128Mx4 64Mx8 32Mx16

Organization 32M x 4 x 4banks 16M x 8 x 4banks 8M x 16 x 4banks

Row Address A0 - A12 A0 - A12 A0 - A12

Column Address A0-A9, A11, A12 A0-A9, A11 A0-A9

Bank Address BA0, BA1 BA0, BA1 BA0, BA1

Auto Precharge Flag A10 A10 A10

Refresh 8K 8K 8K

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PIN DESCRIPTION

PIN TYPE DESCRIPTION

CK, /CK Input Clock: CK and /CK are differential clock inputs. All address and control input signals are

sampled on the crossing of the positive edge of CK and negative edge of /CK. Output

(read) data is referenced to the crossings of CK and /CK (both directions of crossi ng ).

CKE Input

Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal cloc k signals, and

device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER

DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row

ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF

REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for ou tput disab le. CKE

must be maintained high throughout READ and WRITE accesses. Input buff ers, excluding

CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are

disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW

level after VDD is applied.

/CS Input Chip Select: Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-

mands are masked when CS is registered high. CS provides for external bank selection on

systems with multiple banks. CS is considered part of the co mmand code.

BA0, BA1 Input Bank Addr es s I nputs : BA 0 and BA1 def ine to whic h bank an ACTIVE, R ead, W rit e or PR E-

CHARGE command is being applied.

A0 ~ A12 Input

Address Input s: Provid e the row ad dress f or ACTIVE co mmands, and the colu mn address

and AUT O PR ECHARGE bit f o r READ/WRITE comman ds, to select one lo ca tion ou t of the

memory array in the respective bank. A10 is sampled during a Precharge command to

determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10

HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The

address inputs also provide the op code during a MODE REGISTER SET command. BA0

and BA1 define which mod e register is loaded durin g the MODE REGISTER SET command

(MRS or EMRS).

/RAS, /CAS, /WE Input Command Inpu ts : /RAS, /CAS and /WE (along with /CS) define the command being

entered.

DM

(LDM,UDM) Input

Input Data Mask: DM is an input mask signal for wri te data. Input data is masked when

DM is sampled HIGH along with that inpu t data during a WRITE access. DM is sampled

on both ed ges of D QS . Al thou gh D M pi ns are input only, the DM loading matches the DQ

and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corre-

sponds to the data on DQ8-Q15.

DQS

(LDQS,UDQS) I/O Data Strobe: Output with read data, input with write data. Edge aligned with read data,

centered in write data. Used to capture write data. For the x16, LDQS corresponds to the

data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15.

DQ I/O Data input / output pin: Data bus

VDD/VSS Supply Power supply for internal circuits and input buffers.

VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.

VREF Supply Reference voltage for inputs for SSTL interface.

NC NC No connection.

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Command

Decoder

CLK

/CLK

CKE

/CS

/RAS

/CAS

/WE

DM

Address

Buffer

A0~A12

Bank

Control 32Mx4/Bank0

Colum n Decoder

Colum n Address

Counter

Sense AM P

2-bit Prefetch Unit

32Mx4/Bank1

32Mx4/Bank2

32Mx4/Bank3

Mode

Register Row

Decoder

Input Buffer Output Buffer

DLL

Block

Mode

Register

Data Strobe

Transmitter

Data Strobe

Receiver

DQS

CLK

/CLK

DS

W rite Data Register

2-bit Prefetch Unit DS

DQ [0:3]

84

4

8

CLK_DLL

BA0, BA1

FUNCTIONAL BLOCK DIAGRAM (128Mx4)

4Banks x 32Mbit x 4 I/O Double Data Rate Synchronous DRAM

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Command

Decoder

CLK

/CLK

CKE

/CS

/RAS

/CAS

/WE

DM

Address

Buffer

A0~A12

Bank

Control 16Mx8/Bank0

Colum n Decoder

Colum n Address

Counter

Sense AM P

2-bit Prefetch Unit

16Mx8/Bank1

16Mx8/Bank2

16Mx8/Bank3

Mode

Register Row

Decoder

Input Buffer Output Buffer

DLL

Block

Mode

Register

Data Strobe

Transmitter

Data Strobe

Receiver

DQS

CLK

/CLK

DS

W rite Data Register

2-bit Prefetch Unit DS

DQ [0:7]

16 8

8

16

CLK_DLL

BA0,BA1

FUNCTIONAL BLOCK DIAGRAM (64Mx8)

4Banks x 16Mbit x 8 I/O Double Data Rate Synchronous DRAM

Rev. 1.2 / Feb. 2006 8

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HY5DU121622C(L)TP-xI

Command

Decoder

CLK

/CLK

CKE

/CS

/RAS

/CAS

/WE

LDM

Address

Buffer

A0~A12

Bank

Control 8Mx16/Bank0

Colum n Decoder

Colum n Address

Counter

Sense AM P

2-bit Prefetch Unit

8Mx16/Bank1

8Mx16/Bank2

8Mx16/Bank3

Mode

Register Row

Decoder

Input Buffer Output Buffer

DLL

Block

Mode

Register

Data Strobe

Transmitter

Data Strobe

Receiver

LDQS, UDQS

CLK

/CLK

LDQS

UDQS

W rite Data Register

2-bit Prefetch Unit DS

DQ[0:15]

32 16

16

32

CLK_DLL

BA0, BA1

UDM

FUNCTIONAL BLOCK DIAGRAM (32Mx16)

4Banks x 8Mbit x 16 I/O Double Data Rate Synchronous DRAM

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HY5DU121622C(L)TP-xI

SIMPLIFIED COMMAND TRUTH TABLE

Command CKEn-1 CKEn CS RAS CAS WE ADDR A10/AP BA

Extended Mode Register Set1,2 HXLLLL OP code

Mode Register Set1,2 HXLLLL OP code

Device Deselect1HXHXXX X

No Operation1LHHH

Bank Active1HXLLHH RA V

Read1HXLHLHCALV

Read with Autoprecharge1,3 H

Write1HXLHLLCA

LV

Write with Autoprecharge1,4 H

Precharge All Banks1,5 HXLLHLXHX

Precharge selected Bank1LV

Read Burst St op1HXLHHL X

Auto Refre s h1HHLLLH X

Self Refresh1

Entry HLLLLH

X

Exit LHHXXX

LHHH

Precharge Power

Down Mode 1

Entry HLHXXX

X

LHHH

Exit LHHXXX

LHHH

Active Power

Down Mode 1Entry HLHXXX

XLVVV

Exit L H X

Note:

1. LDM/UDM stat es are Don’t Care. Refer to below Write Mask Truth Table.

2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Register setting during E x tended MRS or MRS.

Before entering Mode Register Set mode, a ll banks mu st be in a precharge state and MRS command can be issued after tRP

period from Precharge command.

3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented

to activated bank until CK(n +BL /2+tRP).

4. If a Write with Autoprecharge command is detected by memory co mponent in CK(n), then there will be no command presented

to activated bank until CK(n+BL/2+1+tWR+tRP). Write Recovery Time(tWR) is needed to guarantee that the last data has been

completely written.

5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be

precharged.

*For more information about Truth Table, refer to “Device Operation” section in Hynix website.

( H=Logic High Level, L=Logic Low Level, X=Do n’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )

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WRITE MASK TRUTH TABLE

Function CKEn-1 CKEn /CS, /RAS,

/CAS, /WE DM ADDR A10/

AP BA

Data Write1HX X L X

Data-In Mask1HX X H X

Note:

1. Write Mask command ma sks burst write data w ith reference to LDQS/UDQS(Data Strobes) and it is not related with read data.

In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.

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SIMPLIFIED STATE DIAGRAM

MRS SREF

SREX

PDEN

PDEX

ACT

AREF

PDEX

PDEN

BST

READWRITE

WRITE

WRITEAP

READ

READAP READAP

PRE(PALL)

Command Input

Automatic Sequence

IDLE

AUTO

REFRESH

PRE-

CHARGE

POWER-UP

POWER APPLIED

MODE

REGISTER

SET

POWER

DOWN

WRITE

WITH

AUTOPRE-

CHARGE

POWER

DOWN

WRITE

READ

WITH

AUTOPRE-

CHARGE

BANK

ACTIVE

READ

SELF

REFRESH

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POWER-UP SEQUENCE AND DEVICE INITIALIZATION

DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those

specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF

(and to the system VTT). VTT must be applied a fter VDDQ to a void devi ce latch-up , which m ay caus e permanent d am-

age to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT.

Except for CKE, inputs are not recognized as v alid until after VREF is applied. CKE is an SSTL_2 input, but will detect an

LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to

guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal oper-

ation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR

SDRAM requires a 200us delay prior to applying an executable command.

Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be

brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED

MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE

REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating

parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Reg-

ister set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.

Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command

for the Mode Register, with the reset DLL bit deactivated low (i .e. to program operating parameters without resetti ng

the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.

1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at L VC-

MOS low state. (All the other input pins may be undefined.)

• VDD and VDDQ are driven from a single power converter output.

• VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation.

• VREF tracks VDDQ/2.

• A minimum resistance of 42 Ohms (22 ohm se ries r esistor + 22 ohm parallel resistor - 5% toler ance) limits the

input current from the VTT supply into any pin.

• If the above criteria cannot be met by the system design, then the following sequencing and voltage relation-

ship must be adhered to during power up.

2. Start clock and maintain stable clock for a minimum of 200usec.

3. After stable power and clock, apply NOP condition and take CKE high.

4. Issue Extended Mode Register Set (EMRS) to enable DLL.

5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200

cycles(tXSRD) of clock are required for locking DLL)

6. Issue Precharge commands for all banks of the device.

7. Issue 2 or more Auto Refresh commands.

8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low

Voltage description Sequencing Voltage relationship to avoid latch-up

VDDQ After or with VDD < VDD + 0.3V

VTT After or with VDDQ < VDDQ + 0.3V

VREF After or with VDDQ < VDDQ + 0.3V

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Power-Up Sequence

CODE

CODE CODE CODE

CODE

CODE CODE CODE

CODE

CODE CODE

CODE

NOP PRE MRS

EMRS PRE

NOP MRS

AREF ACT RD

VDD

VDDQ

VTT

VREF

/CLK

CLK

CKE

CMD

DM

ADDR

A10

BA0, BA1

DQS

DQ'S

LVCMOS Low Lev el

tIS tIH

tVTD

T=200usec tRP tMRD tRP tRFC tMRD

tXSRD*

READ

Non-Read

Command

Power UP

VDD and CK stable Precharge All EMRS Set MRS Set

Reset DLL

(with A8=H)

Precharge All 2 or more

Auto Refresh

MRS Set

(wit h A 8=L)

* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command

tMRD

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MODE REGISTER SET (MRS)

The mode regist er is us ed to store th e various op erating mo des such as /CAS latency, addressing mode, burst length,

burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is iss ued by the

low signals of /RAS, /CAS, /CS, /WE an d BA0. This command can be issued only when all banks are in idle state and

CKE must be high at least one cy cle be fore the Mode Regi ster Set Command can be is sued. Two cycles are requir ed to

write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is

determined, the information will be held until reset by another MRS command.

BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 0 Operating Mode CAS Latency BT Burst Lengt h

A2 A1 A0 Burst Length

Sequential Interleave

0 0 0 Reserved Reserved

001 2 2

010 4 4

011 8 8

1 0 0 Reserved Reserved

1 0 1 Reserved Reserved

1 1 0 Reserved Reserved

1 1 1 Reserved Reserved

A3 Burst Type

0Sequential

1 Interleave

A6 A5 A4 CAS Latency

000 Reserved

001 Reserved

010 2

011 3

100 Reserved

101 1.5

110 2.5

111 Reserved

BA0 MRS Type

0MRS

1EMRS

A12~A9 A8 A7 A6~A0 Operating Mode

0 0 0 Valid Normal Operation

0 1 0 Valid Normal Operation/ Reset DLL

001VS Vendor specific Test Mode

---- All other states reserved

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BURST DEFINITION

BURST LENGTH & TYPE

Read and write accesses to th e DDR SD RAM are bu rst orien ted, wi th the burst length being programmable. The burst

length determines the maximum number of column locations that can be accessed for a given Read or Write com-

mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.

Reserved states should not be used, as unknown operation or incompatibility with future versions may result.

When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All

accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is

reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2 -Ai when the burst length

is set to four and by A3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit

for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location

within the block. The programmed burst length applies to both Read and Write bursts.

Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the

burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the

burst type and the starting column address, as shown in Burst Definition Table

CAS LATENCY

The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the

availability of the first burst of output data. The latency can be programmed 2 or 2.5 clocks for DDR200/266/333 and

3 clocks for DDR400. If a Read command is registered at clock edge n, and the latency is m clocks, the data is avail-

able nominally coincident with clock edge n + m.

Reserved states should not be used as unknown operation or incompatibility with future versions may result.

Burst Length Starting Address (A2,A1,A0) Sequential Interleave

2XX0 0, 1 0, 1

XX1 1, 0 1, 0

4

X00 0, 1, 2, 3 0, 1, 2, 3

X01 1, 2, 3, 0 1, 0, 3, 2

X10 2, 3, 0, 1 2, 3, 0, 1

X11 3, 0, 1, 2 3, 2, 1, 0

8

000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7

001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6

010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5

011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4

100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3

101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2

110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1

111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0

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DLL RESET

The DLL must be enabled f or normal oper ation. DLL enable is requ ired during pow er up init ializat ion, an d upon ret urn-

ing to normal operation after having disabled the DLL fo r the purpose of debug or evaluation. The DLL is automatically

disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any

time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally

applied clock before an any command can be issued.

OUTPUT DRIVER IMPEDANCE CONTROL

The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver

option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will

reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver

and the half strength driver are included in this document.

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EXTENDED MODE REGISTER SET (EMRS)

The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-

tions include DLL e nable/disable , output driv er strength selection(optional). These functions are controlled via the bits

shown below. The Extended Mode Register is programmed via the Mode Register Set command (BA0=1 and BA1=0)

and will retain the stored information until it is programmed again or the device loses power.

The Extended Mode Registe r must be loaded when all banks ar e idle and no burs ts are in progress , and the contr oller

must wait the specified time before initiating any subsequent operation. Violating either of these requirements will

result in unspecified operation.

BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 1 Operating Mode 0* DS DLL

A0 DLL enable

0Enable

1Disable

BA0 MRS Ty pe

0MRS

1EMRS

A1 Output Driver

Impedance Control

0 Full Strength Dri ver

1 Half Strength Driver

* This part do not support/QFC function, A2 must be programmed to Zero.

An~A3 A2~A0 Operating Mode

0Valid Normal Operation

__

All other states reserved

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ABSOLUTE MAXIMUM RATINGS

Note: Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITIONS ( TA=-40 to 85 oC, Voltage referenced to VSS = 0V)

Note:

1. VDDQ must not exceed the level of VDD.

2. VIL (min) is acceptab le -1.5V AC pulse width with < 5ns of duration.

3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.

Peak to peak noise on VREF may not exceed ±2% of the DC value.

4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.

5. The ratio of the pullup current to the pulldown current is specifie d for the same tempe rature and voltage, over the entire temper-

ature and voltage r ange, f or d evice dr ai n to sour ce v oltages fr om 0.25 V to 1.0V. For a gi ven output, it repres ents the maximum dif-

ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum

pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.

6. VIN=0 to VDD, All other pins are not tested under VIN =0V.

7. DQs are disabled, VOUT=0 to VDDQ

Parameter Symbol Rating Unit

Operating Temperature (Ambient) TA-40 ~ 85 oC

Storage Temperature TSTG -55 ~ 150 oC

Volt age on VDD relative to VSS VDD -1.0 ~ 3.6 V

Volt age on VDDQ rela tive to VSS VDDQ -1.0 ~ 3.6 V

Voltage on inputs relative to VSS VINPUT -1.0 ~ 3.6 V

Voltage on I/O pins relative to VSS VIO -0.5 ~3.6 V

Output Short Circuit Current IOS 50 mA

Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 oC ⋅ Sec

Parameter Symbol Min Typ. Max Unit

Power Supply Voltage (DDR200, 266, 333) VDD 2.3 2.5 2.7 V

Power Supply Voltage (DDR200, 266, 333)1VDDQ 2.3 2.5 2.7 V

Power Supply Voltage (DDR400) VDD 2.5 2.6 2.7 V

Power Supply Voltage (DDR400)1VDDQ 2.5 2.6 2.7 V

Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V

Input Low Voltage2VIL -0.3 - VREF - 0.15 V

Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V

Reference Voltage3VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V

Input Voltage Level, CK and CK inputs VIN(DC) -0.3 - VDDQ+0.3 V

Input Differential Voltage, CK and CK inputs4VID(DC) 0.36 - VDDQ+0.6 V

V-I Mat ch ing: Pullup to Pulldow n Current Ratio5VI(RATIO) 0.71 - 1.4 -

Input Leakage Current6ILI -2 - 2 uA

Output Leakage Current7ILO -5 - 5 uA

Normal Strength

Output Driver

(VOUT=VTT ±

0.84)

Output High Current

(min VDDQ, min VREF, min VTT) IOH -16.8 - - mA

Output Low Current

(min VDDQ, max VREF, max

VTT) IOL 16.8 - - mA

Half Strength

Output Driver

(VOUT=VTT ±

0.68)

Output High Current

(min VDDQ, min VREF, min VTT) IOH -13.6 - - mA

Output Low Current

(min VDDQ, max VREF, max

VTT) IOL 13.6 - - mA

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IDD SPECIFICATION AND CONDITIONS (TA=- 40 to 85 oC, Voltage referenced to VSS = 0V)

Test Conditions

Test Condition Symbol

Operating Current:

One bank; Active - Precharge; tRC=tRC(min); tCK = tCK(min); DQ,DM and DQS inp uts changing twi ce per clock

cycle; address and control inputs changing once per clock cycle IDD0

Operating Current:

One bank; Active - Read - Precharge;

Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle IDD1

Precharge Power Down Standby Current:

All banks idle; Power down mode; CKE=Low, tCK=tCK(min) IDD2P

Idle Standby Current:

Vin>=Vih(min) or Vin=<Vil(max) for DQ, DQS and DM IDD2N

Idle Standby Current:

/CS=High, All banks idle; tCK=tCK(min);

CKE=High; address and control inputs changing on ce per clock cycle.

VIN=VREF for DQ, DQS and DM

IDD2F

Idle Quiet Standby Current:

/CS>=Vih(min); All b an ks id le; CKE>=Vih(min); Add resses and other contro l inputs stable, Vi n=Vref for DQ, DQS

and DM IDD2Q

Active Power Down Standby Current:

One bank active; Power down mode; CKE=Low, tCK=tCK(min) IDD3P

Active Standby Current:

/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min);

DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock

cycle

IDD3N

Operating Current:

Burst=2; Reads; Continuous burst; On e bank active; Address and control inputs changing once pe r clock cycle;

tCK=tCK(min); IOUT=0mA IDD4R

Operating Current:

Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle;

tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle IDD4W

Auto Refresh Current:

tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh

tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz IDD5

Self Refresh Current:

CKE =< 0.2V; External clock on; tCK=tCK(min) IDD6

Operating Current - Four Bank Operation:

Four bank interleaving with BL=4, Refer to the following page for detailed test condition IDD7

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IDD Specification

128Mx4

64Mx8

Parameter Symbol Speed Unit

DDR400B DDR333 DDR266A DDR266B DDR200

Operating Current IDD0 130 120 100 mA

Operating Current IDD1 170 150 120 mA

Precharge Power Down Standby Current IDD2P 10 mA

Idle Standby Current IDD2F 35 mA

Idle Quiet Standby Current IDD2Q 30 mA

Active Power Down Standby Current IDD3P 45 mA

Active Standby Current IDD3N 60 mA

Operating Current IDD4R 210 190 170 mAOperating Current IDD4W 230 210 180

Auto Refresh Current IDD5 260 240 220

Self Refresh Current Normal IDD6 5mA

Low Power 3mA

Operating Current - Four Bank Operation IDD7 360 350 340 mA

Parameter Symbol Speed Unit

DDR400B DDR333 DDR266A DDR266B DDR200

Operating Current IDD0 130 120 100 mA

Operating Current IDD1 170 150 120 mA

Precharge Power Down Standby Current IDD2P 10 mA

Idle Standby Current IDD2F 35 mA

Idle Quiet Standby Current IDD2Q 30 mA

Active Power Down Standby Current IDD3P 45 mA

Active Standby Current IDD3N 60 mA

Operating Current IDD4R 210 190 170 mAOperating Current IDD4W 230 210 180

Auto Refresh Current IDD5 260 240 220

Self Refresh Current Normal IDD6 5mA

Low Power 3mA

Operating Current - Four Bank Operation IDD7 360 350 340 mA

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32Mx16

Parameter Symbol Speed Unit

DDR400B DDR333 DDR266A DDR266B DDR200

Operating Current IDD0 130 120 100 mA

Operating Current IDD1 170 150 120 mA

Precharge Power Down Standby Current IDD2P 10 mA

Idle Standby Current IDD2F 35 mA

Idle Quiet Standby Current IDD2Q 30 mA

Active Power Down Standby Current IDD3P 45 mA

Active Standby Current IDD3N 60 mA

Operating Current IDD4R 210 190 170 mAOperating Current IDD4W 230 210 180

Auto Refresh Current IDD5 260 240 220

Self Refresh Current Normal IDD6 5mA

Low Power 3mA

Operating Current - Four Bank Operation IDD7 360 350 340 mA

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DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7

IDD1: Operat ing current: One bank operation

1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400

2. Worst Case: VDD = 2.7V, T= 0 oC

3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are

changing once per clock cycle. lout = 0mA

4. Timing patterns

- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=2, tRCD = 2*tCK, tRC = 10*tCK, tRAS = 5*tCK

Read: A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing

50% of data changing at every burst

- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK

Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing

50% of data changing at every burst

- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK

Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing

50% of data changing at every burst

- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 10*tCK, tRAS = 7*tCK

Read: A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random address changing

50% of data changing at every burst

- DDR400(200Mhz, CL=3): tCK = 5ns, CL=3, BL=4, tRCD = 3*tCK, tRC = 11*tCK, tRAS = 8*tCK

Read: A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing

50% of data changing at every burst

Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP

IDD7: Operat ing current: Four ba nk operation

1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400

2. Worst Case: VDD = 2.7V, T= 0 oC

3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not

changing. lout = 0mA

4. Timing patterns

- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with Autoprecharge

Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing

50% of data changing at every burst

- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read with autoprecharge

Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

50% of data changing at every burst

- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK

Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

50% of data changing at every burst

- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

50% of data changing at every burst

- DDR400(200Mhz, CL=3): tCK = 5ns, CL = 2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

50% of data changing at every burst

Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP

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AC OPERATING CONDITIONS (TA=-40 to 85 oC, Voltage referenced to VSS = 0V)

Note:

1. VID is the magnitude of the difference between the input level on CK and the input on /CK.

2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.

*For more information abou t AC Overshoot/Undershoot Specifications, refer to “Device Operation” section in hynix website.

AC OPERATING TEST CONDITIONS (TA=- 40 to 85 oC, Voltage referenced to VSS = 0V)

Parameter Symbol Min Max Unit

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 - V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) -VREF - 0.31 V

Input Differential Voltage, CK and /CK inputs1VID(AC) 0.7 VDDQ + 0.6 V

Input Crossing Point Voltage, CK and /CK inputs2VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V

Parameter Value Unit

Reference Voltage VDDQ x 0.5 V

Termination Voltage VDDQ x 0.5 V

AC Input High Level Voltage (VIH, min) VREF + 0.31 V

AC Input Low Level Voltage (VIL, max) VREF - 0.31 V

Input Timing Measurement Reference Level Voltage VREF V

Output Timing Measurement Reference Level Voltage VTT V

Input Signal maximum peak swing 1.5 V

Input minimum Signal Slew Rate 1 V/ns

Termination Resistor (RT)50

Ω

Series Resistor (RS)25 W

Output Load Capacitance for Access Time Measurement (CL)30pF

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AC CHARACTERISTICS (note: 1 - 9 / AC operating conditions unle ss otherwise noted)

Parameter Symbol DDR400B DDR333 DDR266A DDR266B DDR200 UNIT

Min Max Min Max Min Max Min Max Min Max

Row Cycle Time tRC 55 - 60 - 65 - 65 - 70 - ns

Auto Refresh Row

Cycle Time tRFC 70 - 72 - 75 - 75 - 80 - ns

Row Active Time tRAS 40 70K 42 70K 45 120K 45 120K 50 120K ns

Active to Read with

Auto Precharge Delay tRAP tRCD or

tRASmin -tRCD or

tRASmin -ns

Row Add ress to

Column Address Delay tRCD 15 - 18 - 20 - 20 - 20 - ns

Row Active to Row

Active Delay tRRD 10 - 12 - 15 - 15 - 15 - ns

Column Address to

Column Address Delay tCCD1-1-1-1-1-tCK

Row Precharge Time tRP 15 - 18 - 20 - 20 - 20 - ns

Write Recovery Time tWR 15 - 15 - 15 - 15 - 15 - ns

Internal Write to Read

Command Delay tWTR2-1-1-1-1-tCK

Auto Precharge Write

Recovery + Precharge

Time22 tDAL

(tWR/

tCK)

+

(tRP/tCK)

-

(tWR/

tCK)

+

(tRP/tCK)

-

(tWR/

tCK)

+

(tRP/tCK)

-

(tWR/

tCK)

+

(tRP/tCK)

-

(tWR/

tCK)

+

(tRP/tCK)

-tCK

System

Clock Cycle

Time24

CL = 3

tCK

510--------

CL = 2.5 - - 6 12 7.5 12 7.5 12 8.0 12 ns

CL = 2 - - 7.5127.51210121012ns

Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

Data-Out edge to Clock

edge Skew tAC -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns

DQS-Out edge to Clock

edge Skew tDQSCK -0.55 0.55 -0.6 0.6 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns

DQS-Out edge to Data-

Out edge Skew21 tDQSQ - 0.4 - 0.45 - 0.5 - 0.5 - 0.6 ns

Data-Out hold time

from DQS20 tQH tHP

-tQHS -tHP

-tQHS -ns

Clock Half Period19,20 tHP min

(tCL,tCH) -min

(tCL,tCH) -ns

Data Hold Skew

Factor20 tQHS - 0.5 - 0.55 - 0.75 - 0.75 - 0.75 ns

Valid Data Output

Window tDV tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns

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- Continue

Parameter Symbol DDR400B DDR333 DDR266A DDR266B DDR200 UNIT

Min Max Min Max Min Max Min Max Min Max

Data-out high-impedance window

from CK,/CK10 tHZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns

Data-out low-impedance window

from CK, /CK10 tLZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns

Input Setup Time (fast slew

rate)14,16-18 tIS 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns

Input Hold Time (fast slew

rate)14,16-18 tIH 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns

Input Setup Time (slow slew

rate)15-18 tIS 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns

Input Hold Time (slow slew

rate)15-18 tIH 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns

Input Pulse Width17 tIPW 2.2 - 2.2 - 2.2 - 2.2 - 2.5 - ns

Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK

Writ e DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK

Clock to First Ris ing edge of DQS-

In tDQSS 0.72 1.25 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK

DQS falling edge to CK setup time tDSS 0.2 -0.2-0.2-0.2-0.2-tCK

DQS falling edge hold time from

CK tDSH 0.2 -0.2-0.2-0.2-0.2-tCK

DQ & DM input setup time25 tDS 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns

DQ & DM input hold time25 tDH 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns

DQ & DM Input Pulse Width17 tDIPW 1.75 - 1.75 - 1.75 - 1.75 - 2 - ns

Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Read DQS P ostamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

Write DQS Preamble Setup Time12 tWPRES 0-0-0-0-0-ns

Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - 0.25 - 0.25 - tCK

Wri te DQS Postamble Time11 tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

Mode Regis ter Set Del ay tMRD 2-2-2-2-2-tCK

Exit Self Refresh to non-Read

command23 tXSNR 75 - 75 - 75 - 75 - 80 - ns

Exit Self Refresh to Read

command tXSRD 200 - 200 - 200 - 200 - 200 - tCK

Average Periodic Refresh

Interval13,25 tREFI -7.8 - 7.8 - 7.8 - 7.8 - 7.8 us

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Note:

1. All voltages refe renced to Vss.

2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,

but the related specifications and device operation are guaranteed for the full voltage range specified.

3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to

be either a precise representation of the typical syst em envir onment nor a depiction of the actual load pr esented by a production

tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.

Manufact urers will co rrelate to their pr oductio n test cond itions (generally a coaxial tr ansmission line terminated at the tester elec-

tronics).

4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to

VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under

normal use conditions. The minimum slew rate for t he i nput signals is 1 V/ns in the range between VIL(ac) and VIH(ac).

5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result

of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the

dc input LOW (HIGH) level.

6. Inputs are not recogniz ed as valid until VREF stabilizes. Except ion: during the period before VREF stabilizes, CKE < 0.2VDDQ is

recognize d as LOW.

7. The C K , /CK input refe rence level (for t i ming referenced to C K, /CK) is the point at which CK and /CK cross; the input reference

level for signals other than CK, /CK is VREF.

8. The output timing reference voltage level is VTT.

9. Operation or timing that is no t sp ecified is illegal and after such an event, in order to guar antee proper operation, the DRAM must

be powered down and then restarted through the specified initialization sequence before normal operation can continue.

10. tHZ and tLZ tr ans itio ns occ ur in the same acc ess time wind ows as valid data transi tion s. Thes e par a meters are n ot re f er enced to

a specific voltage level but specify when the devic e output is no longer driving (HZ), or begins driving (LZ).

11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but

system performance (bus turnaround) will degrade accordingly.

12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A

valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previ-

ously in progress on the bus, DQS will be transitioning from High-Z to logic L O W. If a previou s writ e was in progress, DQS coul d

be HIGH, LOW, or t ransitioning from HIGH to LOW at this time, depending on tDQSS.

13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.

14. For command/address input slew rate ≥1.0 V/ns.

15. For command/address input slew rate ≥0.5 V/ns and ＜1.0 V/ns

16. For CK & /CK slew rate ≥1.0 V/ns (single-ended)

17. These parameters guarantee device timing, but they are not nece ssarily tested on each device.

They may be guaranteed by device design or tester correlatio n.

18. Slew Rate is measured between VOH(ac) and VOL(ac).

19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock hig h tim e as pr o vided to the dev ice (i.e. this

value can be greater than the minim um specificati on l im its for tCL and tCH).

For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half

period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.

Figure: Timing Referen ce Lo ad

VDDQ

50

Output

(VOUT)

30 pF

Ω

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20.tQH = tHP - tQHS, where:

tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The

pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the

worst case pul l--in of DQ on the ne xt t ransition, both of whi ch are, separately, due to data pin skew and output pattern effect s,

and p-channel to n-channel variat ion of the output drivers.

21. tDQSQ:

Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given

cycle.

22. tDAL = (tWR/tCK) + (tRP/tCK)

For each of the terms above, if not already an integer, round to th e ne xt highest integer.

Example: For DDR266B at CL=2.5 and tCK=7.5 ns

tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks

= ((2) + (3)) clocks

= 5 clocks

23. In all circumstances, tXSNR can be satisfied using

tXSNR = tRFCmin + 1*tCK

24. The only time that the clock frequ e ncy is allowed to change is during self-refresh mode.

25. If refresh timing or tDS/ tD H i s violated, data corruption may occur and the data must be re-written with valid data before a valid

READ can be executed.

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SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS

The following tables are described specification parameters that required in systems using DDR devices to ensure

proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.

Input Slew Rate for DQ/DM/DQS (Table a.)

Address & Control Input Setup & Hold Time Derating (Table b.)

DQ & DM Input Setup & Hold Time Derating (Table c.)

DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate (Table d.)

Output Slew Rate Characteristics (for x4, x8 Devices) (Table e.)

Output Slew Rate Characteristics (for x16 Device) (Table f.)

Output Slew Rate Matching Ratio Characteristics (Table g.)

AC CHARACTERISTICS DDR400 DDR333 DDR266 DDR200 UNIT Note

PARAMETER Symbol min max min max min max min max

DQ/DM/DQS input slew rate

measured between VIH(DC),

VIL(DC) and VIL(DC), VIH(DC) DCSLEW 0.5 4.0 0.5 4.0 0.5 4.0 0.5 4.0 V/ns 1,12

Input Slew Rate Delta tIS Delta tIH UNIT Note

0.5 V/ns 0 0 ps 9

0.4 V/ns +50 0 ps 9

0.3 V/ns +100 0 ps 9

Input Slew Rate Delta tDS Delta tDH UNIT Note

0.5 V/ns 0 0 ps 11

0.4 V/ns +75 0 ps 11

0.3 V/ns +150 0 ps 11

Input Slew Rate Delta tDS Delta tDH UNIT Note

±0.0 ns/V 00ps10

±0.25 ns/V +50 +50 ps 10

±0.5 ns/V +100 +100 ps 10

Slew Rate

Characteristic Typical Range

(V/ns) Minimum

(V/ns) Maximum

(V/ns) Note

Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6, 7,8

Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8

Slew Rate

Characteristic Typical Range

(V/ns) Minimum

(V/ns) Maximum

(V/ns) Note

Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6, 7,8

Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8

Slew Rate Characteristic DDR266A DDR266B DDR200 Note

Parameter min max min max min max

Output Slew Rate Matching Ratio

(Pullup to Pulldown) - - - - 0.71 1.4 5,12

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Note:

1. Pullup slew rate is characterized und er the test conditio ns as shown in below Figure.

2. Pulldown slew rate is measured under the test conditions shown in below Figure.

3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ±250mV)

Pulldown slew rate is measured between (VDDQ/2 + 320mV ±250mV)

Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output

switching.

Example: For typical slew, DQ0 is switching

For minimum slew rate, all DQ bits are switching worst case pattern

For maximum slew rate, only one DQ is switching from either high to low, or low to high.

The remaining DQ bits remain the same as for previous state.

4. Evaluation conditions

Typical: 25 oC (Ambient), VDDQ = nominal, ty pi cal pr o ces s

Minimum: 70 oC (Ambient), VDDQ = minimum, slow-slow process

Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process

5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature

and voltage r ange. For a given output, it r epresents the maximum difference between pullup and pulldown drivers due to process

variation.

6. Verified under typical cond iti on s for qualification purposes.

7. TSOP-II package devices only.

8. Only intended for operation up to 256 Mbps per pin.

9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.

The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), sim-

ilarly for rising transitions.

10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c

& d. Input slew rate is based on the larger of AC-AC delta rise, fall ra te and DC -D C delta rise, f all r ate. I nput slew r ate is bas ed on

the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), s imilarly for rising transitions. The

delta rise/f all rate is calculated as:

{1/(Slew Rate1)} - {1/(slew Rate2)}

For example:

If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would

result in the need for an increase in tDS and tDH of 100ps.

11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the

lesser of the AC- AC slew rate and the DC -DC slew r ate. The input slew rate is based on the lesser of the slew rates determined by

either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for rising transitions.

12. DQS, DM, and DQ input slew rate is specified to prevent double clocking of dat a and p reserve setup and hold times. Signal tran-

sitions through the DC region must be monotonic.

50

Output

(VOUT)

VSSQ

Test Point

Figure: Pullup S lew rate

Ω

VDDQ

50

Test Point

Output

(VOUT)

Figure: Pulldown Slew rate

Ω

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CAPACITANCE (TA=25oC, f=100MHz)

Note:

1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V

2. Pins not under test are tied to GND.

3. These values are guaranteed by desig n and are tested on a sample basi s only.

OUTPUT LOAD CIRCUIT

Parameter Pin Symbol Min Max Unit

Input Clock Capacitance CK, /CK CI1 2.0 3.0 pF

Delta Input Clock Capacitance CK, /CK Delta CI1 -0.25pF

Input Capacita n ce All other input-only pins CI1 2.0 3.0 pF

Delta Input Capacit ance All other input-only pins D e lta CI2 -0.5pF

Input / Output Capacitance DQ, DQS, DM CIO 4.0 5.0 pF

Delta Input / Output Capa citance DQ, DQS, DM Delta CIO -0.5pF

VREF

VTT

RT=50Ω

Zo=50Ω

CL=30pF

Output

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PACKAGE INFORMATION

400mil 66pin Thin Small Outline Package

10.26 (0.404)

10.05 (0.396)

11.94 (0.470)

11.79 (0.462)

22.33 (0.879)

22.12 (0.871)

1.194 (0.0470)

0.991 (0.0390)

0.65 (0.0256) BSC 0.35 (0.0138)

0.25 (0.0098)

0.15 (0.0059)

0.05 (0.0020)

BASE PLANE

SEATING PLANE

0.597 (0.0235)

0.406 (0.0160) 0.210 (0.0083)

0.120 (0.0047)

0 ~ 5 Deg.

Un it : mm(Inch ) max

min

,