JANTX1N6626US - MICROCHIP TECHNOLOGY

VOIDLESS-HERMETICALLY-SEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6626US thru 1N6631US

1N6626US – 1N6631US

DESCRIPTION APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 10 00 volts are hermetically sealed with voidless-

glass construction usi ng an internal “Categ ory I” metallurg ical bond. T hese devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6626 thru 1N6631). Microsemi also offers numero us other rectifier

products to meet higher and lo wer current ratings with various recovery time spee d

requirements including stand ard, fast and u ltrafast device types in both through-hole

and surface mount packages.

Package “E”

or D-5B

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENE FITS

• Surface mount series equivalent to the JEDEC registered

1N6626 to 1N6631 series

• Voidless hermetically s ealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, and JANTXV available per MIL-PRF-

19500/590

• Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefi x, e.g.

SP6626US, SP6629US, etc.

• Axial-leaded e quivalents also availabl e (see separate data

sheet for 1N6626 thru 1N6631)

• Ultrafast recovery rectifier series 200 to 1000 V

• Military and other high-reliability applications

• Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power

capability

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• Junction Temperature: -65oC to +150oC

• Storage Temperature: -65oC to +175oC

• Peak Forward Surge Current @ 25oC: 75A (except

1N6631 which is 60A)

Note: Test pulse = 8.3ms, half-sine wave.

• Average Rectified For ward Current (IO) at TEC = +110oC:

1N6626US thru 1N6628US 2.3 A

1N6629US thru 1N6631US 1.8 A

(Derate linearly at 2.5%/oC for TEC > +110oC)

• Average Rectified For ward Current (IO) at TA=25oC:

1N6626US thru 1N6628US 1.75 A

1N6629US thru 1N6631US 1.40 A

(Derate linearly at 0.80%/ oC for TA>+25oC. This IO rating

is for PC boards where thermal resistance from mounting

point to ambient is sufficiently controlled where TJ(max) is

not exceeded. See latest issue of MIL-PRF-19500/590)

• Thermal Resistance junction to endcap (RθJEC): 6.5oC/W

• Capacitance at VR= 10 V: 40 pF

• Solder temperature: 260oC for 10 s (maximum)

• CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous

inventory had solid Silver end caps with

Tin/Lead finish.

• MARKING: Cathode band only

• POLARITY: Cathode indicated by band

• Tape & Reel option: Standard per EIA-481-B

• Weight: 539 mg

• See package dimensions and recommended

pad layout on last page

Microsemi

Scottsdale Division Page 1

10-30-2009 REV G, SD53A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLY-SEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6626US thru 1N6631US

1N6626US – 1N6631US

ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM

REVERSE

CURRENT IR @

VRWM

TYPE

NUMBER MINIMUM

BREAK-

DOWN

VOLTAGE

IR = 50 μA

MAXIMUM

FORWARD

VOLTAGE

VF @ IF

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

TA=25oC TA=150oC

MAXIMUM

REVERSE

RECOVERY

TIME (LOW

CURRENT)

trr

Note 1

MAXIMUM

REVERSE

RECOVERY

TIME (HIGH

CURRENT)

trr

Note 2

PEAK

RECOVERY

CURRENT

IRM (rec)

IF = 2 A,

100 A/μs

Note 2

FORWARD

RECOVERY

VOLTAGE

VFRM Max

IF = 0.5 A

tr = 12 ns

V V @ A V @ A V μA μA ns ns A V

1N6626US 220 1.35V @ 2.0 A 1.50V @ 4.0 A 200 2.0 500 30 45 3.5 8

1N6627US 440 1.35V @ 2.0 A 1.50V @ 4.0 A 400 2.0 500 30 45 3.5 8

1N6628US 660 1.35V @ 2.0 A 1.50V @ 4.0 A 600 2.0 500 30 45 3.5 8

1N6629US 880 1.40V @ 1.4 A 1.70V @ 3.0 A 800 2.0 500 50 60 4.2 12

1N6630US 990 1.40V @ 1.4 A 1.70V @ 3.0 A 900 2.0 500 50 60 4.2 12

1N6631US 1100 1.60V @ 1.4 A 1.95V @ 2.0 A 1000 4.0 600 60 80 5.0 20

NOTE 1: Low Current Rev erse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,

Method 4031, Condition B.

NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031,

Condition D.

SYMBOLS & DEFINITI ONS

Symbol Definition

VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specifi ed current.

VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the oper ating

temperature range.

VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specifi ed current.

IR Maximum Reverse Current: The maximum reverse (leakage) current that will flo w at the specified voltage an d

temperature.

C Capacitance: The capacitanc e in pF at a frequency of 1 MHz and specified voltage.

trr

Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified recovery dec ay point after a peak

reverse current is reached.

CHARTS AND GRAPHS

FIGURE 1 FIGURE 2

Typical Forward Current Typical Forward Current

vs vs

Forward Voltage Forward Voltage

Microsemi

Scottsdale Division Page 2

10-30-2009 REV G, SD53A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLY-SEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6626US thru 1N6631US

1N6626US – 1N6631US

FIGURE 3 FIGURE 4

Typical Reverse Current vs. Typical Reverse Current vs.

Applied Reverse Voltage Applied Reverse Voltage

10ms

FIGURE 5 FIGURE 6

Forward Pulse Current vs. Reverse Pulse Power vs.

Pulse Duration Pulse Duration

Microsemi

Scottsdale Division Page 3

10-30-2009 REV G, SD53A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLY-SEALED

SURFACE MOUNT ULTRA FAST

VERY

TIFIER

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 4

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6626US thru 1N6631US

1N6626US – 1N6631US

PACKAGE DIMENSIONS AND PAD LAYOUT

NOTE: This Package Outline has also previously PAD LAYOUT

been identified as “D-5B”

INCHES mm

A 0.288 7.32

B 0.070 1.78

C 0.155 3.94

Note: If mounting requires adhesive

separate from the solder, an additional

0.080 inch diameter contact may be

placed in the center between the pads

as an optional spot for cement.

INCHES mm

MIN MAX MIN MAX

BL .200 .225 5.08 5.72

BD .137 .148 3.48 3.76

ECT .019 .028 0.48 0.711

S .003 --- 0.08 ---

10-30-2009 REV G, SD53A