Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= - IC Tcase = 25/80 C IFM= - ICM Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C IFSM tp = 10 ms; Tj = 150 C I2t Values ... 123 D ... 123 D1 1200 1200 200 / 180 400 / 360 20 1380 - 40 . . .+150 (125) 2 500 7) Class F 40/125/56 FWD 6) 260 / 180 400 / 360 1800 24 200 200 / 130 400 / 360 1450 10 500 Units V V A A V W C V A A A A2s SEMITRANS(R) M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6) SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) C VCE = 20 V, IC = 150 A IGES VCEsat VCEsat gfs min. typ. VCES - 4,5 5,5 - 0,2 - 12 - - - 2,5(3,1) - 2,8(3,6) 95 - max. Units - 6,5 3 - 1 3(3,7) - - V V mA mA A V V S CCHC Cies Coes Cres LCE per IGBT VGE = 0 VCE = 25 V f = 1 MHz - - - - - - 10 1,5 0,8 - 700 13 2 1,2 20 pF nF nF nF nH td(on) tr td(off) tf Eon 5) Eoff 5) - - - - - - 220 100 600 70 24 17 400 200 800 100 - - ns ns ns ns mWs mWs Inverse Diode 8) VF = VEC IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C VF = VEC Tj = 125 C VTO Tj = 125 C rT IF = 150 A; Tj = 25 (125) C2) IRRM Qrr IF = 150 A; Tj = 25 (125) C2) - - - - - - 2,0(1,8) 2,25(2,05) - 5 55(80) 8(20) 2,5 - 1,2 7 - - V V V m A C FWD of types "GAL", "GAR" "123D1"8) 6) VF = VEC IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C VF = VEC Tj = 125 C VTO Tj = 125 C rT IF = 150 A; Tj = 25 (125) C2) IRRM Qrr IF = 150 A; Tj = 25 (125) C2) - - - - - - 1,85(1,6) 2,0(1,8) - 3 60(90) 8(23) 2,2 - 1,2 5,5 - - V V V m A C Thermal Characteristics per IGBT Rthjc per diode / FWD "GAL; GAR" Rthjc per module Rthch - - - - - - 0,09 0,25/0,18 0,038 C/W C/W C/W VCC = 600 V VGE = -15 V / +15 V3) IC = 150 A, ind. load RGon = RGoff = 5,6 Tj = 125 C by SEMIKRON 0898 6) 6) GA GB GAL GAR Features * MOS input (voltage controlled) * N channel, Homogeneous Si * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology * Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: B6 - 153 * Switching (not for linear use) Tcase = 25 C, unless otherwise specified 2) IF = - IC, VR = 600 V, - diF/dt = 1500 A/s, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff = 5,6 6) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM 300 GA 123 D 7) Visol = 4000 Vrms on request 8) CAL = Controlled Axial Lifetime Technology. Cases and mech. data B6-154 *) SEMITRANS 4 B6-168 1) B 6 - 149 SKM 200 GA 123 D... Tj = 125 C VCE = 600 V VGE = + 15 V RG = 5,6 Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC) IC [A] 1000 Tj = 125 C VCE = 600 V VGE = + 15 V IC = 150 A 1502iu.vpo 1 pulse TC = 25 C Tj < 150 C t(p)= 20us 100 100us 1ms 10 10ms 1 1 Fig. 3 Turn-on /-off energy = f (RG) 1000 ICSC/ICN Tj < 150 C VGE = 15 V RGoff = 5,6 IC = 150 A 2 100 Not for linear use 10000 VCE [V] Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) 1502rso.vpo ICpuls/IC 2.5 10 1502soas.vpo Tj < 150 C VGE = + 15 V tsc < 10 s L < 25 nH ICN = 150 A 12 10 8 1.5 Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s 6 1 4 0.5 2 0 0 0 500 1000 1500 VCE [V] 0 Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 150 500 1000 1500 VCE [V] Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 (c) by SEMIKRON Tj = 150 C VGE > 15 V Fig. 8 Rated current vs. temperature IC = f (TC) IC [A] 200 180 17V 15V 160 13V 140 9V 120 9V 100 13V 11V 140 11V 120 17V 180 15V 160 1502us7.vpo IC [A] 200 1502us3.vpo 7V 100 7V 80 80 60 60 40 40 20 20 0 0 0 1 2 3 4 VCE [V] Fig. 9 Typ. output characteristic, tp = 80 s; 25 C 0 1 2 3 4 VCE [V] Fig. 10 Typ. output characteristic, tp = 80 s; 125 C 1502gf3.vpo IC [A] 320 280 Pcond(t) = VCEsat(t) . IC(t) 240 VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) 200 VCE(TO)(Tj) 1,5 + 0,002 (Tj - 25) [V] 160 typ.: rCE(Tj) = 0,0066 + 0,000027 (Tj - 25) [] 120 80 max.: rCE(Tj) = 0,0100 + 0,000033 (Tj - 25) [] 40 +2 [V]; IC > 0,3 ICnom valid for VGE = + 15 -1 0 0 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 2 4 6 8 10 12 VGE [V] Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 B 6 - 151 SKM 200 GA 123 D... 1502Qg3.vpo VGE [V] 20 1502C.vpo C [nF] 100 18 600V 16 800V VGE = 0 V f = 1 MHZ ICpuls = 150 A 14 10 Ciss 12 10 8 Coss 1 6 Crss 4 2 0 0.1 0 200 400 600 800 1000 1200 QG [nC] 0 Fig. 13 Typ. gate charge characteristic Tj = 125 C VCE = 600 V VGE = + 15 V RGon = 5,6 RGoff = 5,6 induct. load tdon tr 102 30 t [ns] 104 1502tic.vpo tdoff 20 1502trg.vpo 103 tdon tr W 102 10 100 200 300 Tj = 125 C VCE = 600 V VGE = + 15 V IC = 150 A induct. load tdoff tf 0 40 VCE [V] Fig. 14 Typ. capacitances vs.VCE QV 10 10 400 IC [A] Fig. 15 Typ. switching times vs. IC tf 0 20 40 60 5* >::@ Fig. 16 Typ. switching times vs. gate resistor RG 0*%;/6 P- 9&& 9 7M & 9*( 9 5* 30 (RII' Fig. 17 Typ. CAL diode forward characteristic B 6 - 152 ,) $ Fig. 18 Diode turn-off energy dissipation per pulse 0898 (c) by SEMIKRON (c) by SEMIKRON 0796 B 6 - 153 SKM 200 GA 123 D... SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532 SKM 150 GB 123 D SKM 200 GB 123 D SKM 200 GB 123 D1 SKM 200 GB 173 D SKM 200 GB 173 D1 Dimensions in mm SKM 150 GAL 123 D SKM 200 GAL 123 D SKM 150 GAR 123 D SKM 200 GAR 123 D SKM 200 GAL 173 D Case D 57 ( D 56) Case outline and circuit diagrams Case D 58 ( D 56) For SKM 200 GA 123 D (SEMITRANS 4) B 6 - 168 Mechanical Data Symbol Conditions M1 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals US Units M2 (M6) (M6) a w 6) min. 3 27 2,5 22 - - Values typ. max. - 5 - 44 - 5 - 44 - 5x9,81 - 325 Freewheeling diode B 6 - 149, remark 6. B 6 - 154 0898 Units Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1. (c) by SEMIKRON