316577-06
December 2007
Numonyx™ Embedded Flash Memory (J3 v D)
32, 64, 128, and 256 Mbit (Monolithic)
Datasheet
Product Features
Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128
Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous
page-mode reads
— 32-Byte Write buffer;
4 µs per Byte Effective programming time
System Voltage
—V
CC = 2.7 V to 3.6 V
—V
CCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32,
64, 128 and 256 Mbit)
Security
— Enhanced security options for code
protection
— 128-bit Protection Register:
64-bits Unique device identifier bits
64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power
transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash
Interface (CFI) Compatible
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology
Datasheet December 2007
2316577-06
Legal L ines and Disclaimers
INFORMATIO N IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND
CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A
PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx
products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice.
Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented
subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or
otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting the
Numonyx website at http://www.numonyx.com.
Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 2007, Numonyx B.V., All Rights Reserved.
December 2007 Datasheet
316577-06 3
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Contents
1.0 Introduction .............................................................................................................. 6
1.1 Nomenclature ..................................................................................................... 6
1.2 Acronyms........................................................................................................... 6
1.3 Conventions ....................................................................................................... 7
2.0 Functional Overview ..................................................................................................8
2.1 Block Diagram .................................................................................................. 10
2.2 Memory Map..................................................................................................... 11
3.0 Package Information ............................................................................................... 12
3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit ............................................ 12
3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit .................................................. 13
4.0 Ballouts and Signal Descriptions.............................................................................. 15
4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit ........................................................... 15
4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit.......................................... 16
4.3 Signal Descriptions ............................................................................................ 16
5.0 Maximum Ratings and Operating Conditions............................................................ 18
5.1 Absolute Maximum Ratings................................................................................. 18
5.2 Operating Conditions ......................................................................................... 18
5.3 Power Up/Down ................................................................................................ 18
5.3.1 Power-Up/Down Characteristics................................................................ 18
5.3.2 Power Supply Decoupling ........................................................................ 19
5.4 Reset............................................................................................................... 19
6.0 Electrical Characteristics ......................................................................................... 20
6.1 DC Current Specifications ................................................................................... 20
6.2 DC Voltage specifications.................................................................................... 21
6.3 Capacitance...................................................................................................... 22
7.0 AC Characteristics ................................................................................................... 23
7.1 Read Specifications............................................................................................ 23
7.2 Program, Erase, Block-Lock Specifications ............................................................ 29
7.3 Reset Specifications........................................................................................... 29
7.4 AC Test Conditions ............................................................................................ 30
8.0 Bus Interface........................................................................................................... 31
8.1 Bus Reads ........................................................................................................ 32
8.1.1 Asynchronous Page Mode Read ................................................................ 32
8.1.1.1 Enhanced Configuration Register................................................. 32
8.1.2 Output Disable....................................................................................... 33
8.2 Bus Writes........................................................................................................ 33
8.3 Standby ........................................................................................................... 34
8.3.1 Reset/Power-Down ................................................................................. 34
8.4 Device Commands............................................................................................. 34
9.0 Flash Operations ..................................................................................................... 36
9.1 Status Register ................................................................................................. 36
9.1.1 Clearing the Status Register .................................................................... 37
9.2 Read Operations ............................................................................................... 37
9.2.1 Read Array ............................................................................................ 37
9.2.2 Read Status Register .............................................................................. 38
9.2.3 Read Device Information ......................................................................... 38
9.2.4 CFI Query ............................................................................................. 38
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
4316577-06
9.3 Programming Operations ....................................................................................38
9.3.1 Single-Word/Byte Programming................................................................39
9.3.2 Buffered Programming ............................................................................39
9.4 Block Erase Operations .......................................................................................40
9.5 Suspend and Resume .........................................................................................41
9.6 Status Signal ....................................................................................................42
9.7 Security and Protection.......................................................................................43
9.7.1 Normal Block Locking ..............................................................................43
9.7.2 Configurable Block Locking.......................................................................44
9.7.3 OTP Protection Registers..........................................................................44
9.7.4 Reading the OTP Protection Register..........................................................44
9.7.5 Programming the OTP Protection Register ..................................................44
9.7.6 Locking the OTP Protection Register ..........................................................45
9.7.7 VPP/ VPEN Protection ..............................................................................46
10.0 ID Codes ..................................................................................................................47
11.0 Device Command Codes ...........................................................................................48
12.0 Flow Charts..............................................................................................................49
13.0 Common Flash Interface ..........................................................................................58
13.1 Query Structure Output ......................................................................................58
13.2 Query Structure Overview...................................................................................59
13.3 Block Status Register .........................................................................................60
13.4 CFI Query Identification String ............................................................................60
13.5 System Interface Information ..............................................................................61
13.6 Device Geometry Definition .................................................................................61
13.7 Primary-Vendor Specific Extended Query Table ......................................................62
A Additional Information.............................................................................................65
B Ordering Information...............................................................................................66
December 2007 Datasheet
316577-06 5
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Revision History
Date Revision Description
February 2007 001 Initial release
March 2007 002
Revised the following graphics to support 256Mbit:
•Figure 1, “Intel® Embedded Flash Memory (J3 v. D) Memory Block Diagram (32, 64 and 128, 256Mbit)”
on page 10.
•Figure 5, “Easy BGA Ballout (32/64/128/256 Mbit)” on page 15.
•Figure 28, “Decoder for Discrete Family, 32-, 64-, 128-, 256-Mbit (monolithic)” on page 67.
May 2007 003 Minor revisions
August 2007 004 Updated title page to reflect a 256-Mbit monolithic die.
November 2007 005 Updated the 65nm pre-enabling information
December 2007 006 Revised the Signal Description Table and clarified Chip Enable (CE) definitions
Applied Numonyx branding.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
6316577-06
1.0 Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash
Memory (J3 v D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved
mainstream performance with enhanced security features, taking advantage of the
high quality and reliability of the NOR-based Intel 0.13 µm ETOX* VIII process
technology. Offered in 256-Mbit, 128-Mbit, 64-Mbit, and 32-Mbit densities,
theNumonyx™ Embedded Flash Memory (J3 v D, Monolithic) device brings reliable,
low-voltage capability (3 V read, program, and erase) with high speed, low-power
operation. The Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) device takes
advantage of proven manufacturing experience and is ideal for code and data
applications where high density and low cost are required, such as in networking,
telecommunications, digital set top boxes, audio recording, and digital
imaging.Numonyx Flash Memory components also deliver a new generation of forward-
compatible software support. By using the Common Flash Interface (CFI) and Scalable
Command Set (SCS), customers can take advantage of density upgrades and optimized
write capabilities of future Numonyx Flash Memory devices.
The J3v.D product family is also planned on the 65nm process lithography, 65nm AC
timing changes are noted in this datasheet and should be taken into account for all new
designs.
1.1 Nomenclature
1.2 Acronyms
AMIN
All Densities AMIN = A0 for x8
All Densities AMIN = A1 for x16
AMAX
32 Mbit AMAX = A21
64 Mbit AMAX = A22
128 Mbit AMAX = A23
256 Mbit AMAX = A24
Block A group of flash cells that share common erase circuitry and erase simultaneously.
Clear Indicates a logic zero (0)
Program Writes data to the flash array
Set Indicates a logic one (1)
VPEN Refers to a signal or package connection name
VPEN Refers to timing or voltage levels
CUI Command User Interface
OTP One Time Programmable
PLR Protection Lock Register
December 2007 Datasheet
316577-06 7
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
1.3 Conventions
h: Hexadecimal Suffix
k (noun): 1,000
M (noun): 1,000,000
Nibble 4 bits
Byte: 8 bits
Word: 16 bits
Kword: 1,024 words
Kb: 1,024 bits
KB: 1,024 bytes
Mb: 1,048,576 bits
MB: 1,048,576 bytes
Brackets: Square brackets ([]) will be used to designate group membership or to
define a group of signals with similar function (i.e. A[21:1], SR[4,1]
and D[15:0]).
00FFh: Denotes 16-bit hexadecimal numbers
00FF 00FFh: Denotes 32-bit hexadecimal numbers
DQ[15:0]: Data I/O signals
PR Protection Register
PRD Protection Register Data
RFU Reserved for Future Use
SR Status Register
SRD Status Register Data
WSM Write State Machine
ECR Enhanced Configuration Register
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
8316577-06
2.0 Functional Overview
The Numonyx™ Embedded Flash Memory (J3 v D) family contains high-density
memory organized in any of the following configurations:
• 32 Mbytes or 16 Mwords (256-Mbit), organized as two-hundred-fifty-six 128-Kbyte
erase blocks.
• 16 Mbytes or 8 Mwords (128-Mbit), organized as one-hundred-twenty-eight 128-
Kbyte erase blocks.
• 8 Mbytes or 4 Mwords (64-Mbit), organized as sixty-four 128-Kbyte erase blocks.
• 4 Mbytes or 2 Mwords (32-Mbit), organized as thirty-two 128-Kbyte erase blocks.
These devices can be accessed as 8- or 16-bit words. See Figure 1, “Memory Block
Diagram, 32-, 64-, 128-, and 256-Mbit (monolithic)” on page 10 for further details.
A 128-bit Protection Register has multiple uses, including unique flash device
identification.
The Numonyx™ Embedded Flash Memory (J3 v D) device includes new security
features that were not available on the (previous) 0.25µm and 0.18µm versions of the
J3 family. These new security features prevent altering of code through different
protection schemes that can be implemented, based on user requirements.
The Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) optimized architecture
and interface dramatically increases read performance by supporting page-mode reads.
This read mode is ideal for non-clock memory systems.
Its Common Flash Interface (CFI) permits software algorithms to be used for entire
families of devices. This allows device-independent, JEDEC ID-independent, and
forward- and backward-compatible software support for the specified flash device
families. Flash vendors can standardize their existing interfaces for long-term
compatibility.
The Scalable Command Set (SCS) allows a single, simple software driver in all host
systems to work with all SCS-compliant flash memory devices, independent of system-
level packaging (e.g., memory card, SIMM, or direct-to-board placement). Additionally,
SCS provides the highest system/device data transfer rates and minimizes device and
system-level implementation costs.
A Command User Interface (CUI) serves as the interface between the system processor
and internal operation of the device. A valid command sequence written to the CUI
initiates device automation. An internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s 128-Kbyte blocks typically within one
second, independent of other blocks. Each block can be independently erased 100,000
times. Block erase suspend mode allows system software to suspend block erase to
read or program data from any other block. Similarly, program suspend allows system
software to suspend programming (byte/word program and write-to-buffer operations)
to read data or execute code from any other block that is not being suspended.
Each device incorporates a Write Buffer of 32 bytes (16 words) to allow optimum
programming performance. By using the Write Buffer data is programmed more
efficiently in buffer increments.
December 2007 Datasheet
316577-06 9
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Memory Blocks are selectively and individually lockable in-system. Individual block
locking uses block lock-bits to lock and unlock blocks. Block lock-bits gate block erase
and program operations. Lock-bit configuration operations set and clear lock-bits (using
the Set Block Lock-Bit and Clear Block Lock-Bits commands).
The Status Register indicates when the WSM’s block erase, program, or lock-bit
configuration operation completes.
The STS (status) output gives an additional indicator of WSM activity by providing both
a hardware signal of status (versus software polling) and status masking (interrupt
masking for background block erase, for example). Status indication using STS
minimizes both CPU overhead and system power consumption. When configured in
level mode (default mode), it acts as a RY/BY# signal. When low, STS indicates that the
WSM is performing a block erase, program, or lock-bit configuration. STS-high indicates
that the WSM is ready for a new command, block erase is suspended (and
programming is inactive), program is suspended, or the device is in reset/power-down
mode. Additionally, the configuration command allows the STS signal to be configured
to pulse on completion of programming and/or block erases.
Three CE signals are used to enable and disable the device. A unique CE logic design
(see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and 256-Mb” on page 31)
reduces decoder logic typically required for multi-chip designs. External logic is not
required when designing a single chip, a dual chip, or a 4-chip miniature card or SIMM
module.
The BYTE# signal allows either x8 or x16 read/writes to the device:
• BYTE#-low enables 8-bit mode; address A0 selects between the low byte and high
byte.
• BYTE#-high enables16-bit operation; address A1 becomes the lowest order
address and address A0 is not used (don’t care).
Figure 1, “Memory Block Diagram, 32-, 64-, 128-, and 256-Mbit (monolithic)” on
page 10 shows a device block diagram.
When the device is disabled (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128-
and 256-Mb” on page 31), with CEx at VIH and RP# at VIH, the standby mode is
enabled. When RP# is at VIL, a further power-down mode is enabled which minimizes
power consumption and provides write protection during reset. A reset time (tPHQV) is
required from RP# going high until data outputs are valid. Likewise, the device has a
wake time (tPHWL) from RP#-high until writes to the CUI are recognized. With RP# at
VIL, the WSM is reset and the Status Register is cleared.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
10 316577-06
2.1 Block Diagram
Figure 1: Memory Block Diagram, 32-, 64-, 128-, and 256-Mbit (monolithic)
Input Buffer
Ou tpu t
Latch/Multiplexer
Y-Gating
Program /Erase
Voltage Switch
Data
Comparator
Status
Register
Identifier
Register
Data
Reg ist er
I/O Logic
Address
Latch
Address
Counter
X-Decoder
Y-Decoder
Input Buffer
Output
Buf fer
GND
V
CC
V
PEN
CE
0
CE
1
CE
2
WE#
OE#
RP#
BYTE#
Command
User
Interface
DQ
0
-DQ
15
V
CC
Write Buffer
Write State
Machine
Multiplexer
Query
STS
V
CCQ
CE
Logic
A
0
-A
2
32-Mbit: A
0
-A
21
64-Mbit: A
0
-A
22
128-Mbit: A
0
-A
23
256-Mbit: A
0
-A
24
32 -Mbit: Thir ty-two
64 -Mbit: Sixty-four
128-M bit: One- hundr ed twenty -
ei ght
256-M bit: Tw o-hundred fifty -six
128 -Kbyte blocks
December 2007 Datasheet
316577-06 11
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
2.2 Memory Map
Figure 2: Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) Memory Map
64-Kword Block
64-Kword Block
64-Kword Block
64-Kword Block
Word Wide (x16) Mode
1FFFFF
1F0000
7FFFFF
7F0000
01FFFF
010000
00FFFF
000000
A[24-1]: 256 Mbit
A [23-1]: 128 Mbit
A [22-1]: 64 Mbit
A [21-1]: 32 Mbit
128-Kbyte Block
128-Kbyte Block
128-Kbyte Block
128-Kbyte Block
Byte-Wide (x8) Mode
03FFFFF
03E0000
0FFFFFF
0FE0000
003FFFF
0020000
001FFFF
0000000
A[24-0]: 256 Mbit
A [23-0]:128 Mbit
A [22-0]: 64 Mbit
A [21-0]: 32 Mbit
32-Mbit
64-Mbit
64-Kword Block
3FFFFF
3F0000
128-Kbyte Block
07FFFFF
07E0000
31
1
0
127
63
31
1
0
127
63
1 28-Mbit
64-Kword Block128-Kbyte Block
FFFFFF
FF0000
1FFFFFF
1FE0000 255 255
256-Mbit
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
12 316577-06
3.0 Package Information
3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit
Notes:
1. One dimple on package denotes Pin 1.
2. If two dimples, then the larger dimple denotes Pin 1.
3. Pin 1 will always be in the upper left corner of the package, in reference to the product mark.
Figure 3: 56-Lead TSOP Package Mechanical
A
0
L
Detail A
Y
D
C
Z
Pin 1
E
D1
b
Detail B
See Detail A
e
See Detail B
A1
Seating
Plane
A2
See Note 2
See Notes 1 and 3
Table 1: 56-Lead TSOP Dimension Table
Parameter Symbol
Millimeters Inches
Min Nom Max Min Nom Max
Package Height A 1.200 0.047
Standoff A10.050 0.002
Package Body Thickness A20.965 0.995 1.025 0.038 0.039 0.040
Lead Width b 0.100 0.150 0.200 0.004 0.006 0.008
Lead Thickness c 0.100 0.150 0.200 0.004 0.006 0.008
Package Body Length D118.200 18.400 18.600 0.717 0.724 0.732
Package Body Width E 13.800 14.000 14.200 0.543 0.551 0.559
Lead Pitch e 0.500 0.0197
Terminal Dimension D 19.800 20.00 20.200 0.780 0.787 0.795
Lead Tip Length L 0.500 0.600 0.700 0.020 0.024 0.028
December 2007 Datasheet
316577-06 13
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit
Lead Count N 56 56
Lead Tip Angle q 0° 3° 5° 0° 3° 5°
Seating Plane Coplanarity Y 0.100 0.004
Lead to Package Offset Z 0.150 0.250 0.350 0.006 0.010 0.014
Table 1: 56-Lead TSOP Dimension Table
Parameter Symbol
Millimeters Inches
Min Nom Max Min Nom Max
Figure 4: Easy BGA Mechanical Specifications
2
Ball A1
Corner
8 7 6 5 4 3 2 11 2 3 4 5 6 7 8
E
A
B
C
D
E
F
G
H
Seating
Plane
S1
S
e
b
Top View - Plastic Backside
Complete Ink Mark Not Shown
Bottom View - Ball Side Up
Y
A
A1
D
A
B
C
D
E
F
G
H
Ball A1
Corner
A2
Table 2: Easy BGA Package Dimensions Table (Sheet 1 of 2)
Parameter Symb
ol
Millimeters Inches
Min Nom Max Note
sMin Nom Max
Package Height (32, 64, 128, 256 Mbit) A 1.200 0.0472
Ball Height A1 0.250 0.0098
Package Body Thickness (32, 64, 128, 256 Mbit) A2 0.780 0.0307
Ball (Lead) Width b 0.330 0.430 0.530 0.0130 0.0169 0.0209
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
14 316577-06
Notes:
1. For Daisy Chain Evaluation Unit information refer to packaging informaiton at: www.Numonyx.com.
Package Body Width D 9.900 10.000 10.100 1 0.3898 0.3937 0.3976
Package Body Length E 12.900 13.000 13.100 1 0.5079 0.5118 0.5157
Pitch [e] 1.000 0.0394
Ball (Lead) Count N 64 64
Seating Plane Coplanarity Y 0.100 0.0039
Corner to Ball A1 Distance Along D (32/64/128/
256 Mb) S1 1.400 1.500 1.600 1 0.0551 0.0591 0.0630
Corner to Ball A1 Distance Along E (32/64/128/
256 Mb) S2 2.900 3.000 3.100 1 0.1142 0.1181 0.1220
Table 2: Easy BGA Package Dimensions Table (Sheet 2 of 2)
Parameter Symb
ol
Millimeters Inches
Min Nom Max Note
sMin Nom Max
December 2007 Datasheet
316577-06 15
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
4.0 Ballouts and Signal Descriptions
Numonyx™ Embedded Flash Memory (J3 v D) is available in two package types. All
densities of the Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) devices are
supported on both 64-ball Easy BGA and 56-lead Thin Small Outline Package (TSOP)
packages. The figures below show the ballouts.
4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit
Notes:
1. Address A22 is only valid on 64-Mbit densities and above, otherwise, it is a no connect (NC).
2. Address A23 is only valid on 128-Mbit densities and above, otherwise, it is a no connect (NC).
3. Address A24 is only valid on 256-Mbit density, otherwise, it is a no connect (NC).
Figure 5: Easy BGA Ballout (32/64/128/256 Mbit)
A23
18
234 567
128M
Easy BGA
Top View- Ball side down
Easy BGA
Bottom View- Ball side up
1
8234
5
67
H
G
F
E
D
C
B
A
A4A5A11RFU RP#A16A17 RFU
A1A6A8A13 VPENA18A22 VCC
A2VSSA9A14 CE0A19CE1 RFU
A3A7A10A15 A12A20A21 RFU
STS D8D1D9D4 D3D15 RFU
BYTE#OE# D0D10D12 D11RFU RFU
WE# 128M
A0D2D5 VCCQD14 D6
CE2RFUVCCD13 VSSD7A24
256 M
VSS
256M
H
G
F
E
D
C
B
A
A3 A7 A10 A15A12 A20 A21RFU
STSD8 D1 D9 D4D3 D15RFU
BYTE# OE#D0 D10 D12D11 RFURFU
CE2 RFU VCC D13VSS D7 A24VSS
WE#A23 A0 D2 D5VCCQ D14D6
A4 A5 A11 RFURP# A16 A17RFU
A2 VSS A9 A14CE0 A19 CE1RFU
A1 A6 A8 A13VPEN A18 A22VCC
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
16 316577-06
4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit
Notes:
1. A22 exists on 64- and 128- densities. On 32-Mbit density this signal is a no-connect (NC).
2. A23 exists on 128-Mbit densities. On 32- and 64-Mbit densities this signal is a no-connect (NC)
3. A24 exists on 256-Mbit densities and on the other densities this signal is a no-connect (NC).
4.3 Signal Descriptions
Ta b l e 3 lists the active signals used on Numonyx™ Embedded Flash Memory (J3 v D,
Monolithic) and provides a description of each.
Figure 6: 56-Lead TSOP Package Pinout (32/64/128/256 Mbit)
1
3
4
2
5
7
8
6
9
11
12
10
13
15
16
14
17
19
20
18
21
23
24
22
25
27
28
26
56
54
53
55
52
50
49
51
48
46
45
47
44
42
41
43
40
38
37
39
36
34
33
35
32
30
29
31
A22
A21
A20
CE
1
A19
A17
A16
A18
VCC
A14
A13
A15
A12
VPEN
RP#
CE
0
A11
A
9
A
8
A10
GND
A
6
A
5
A
7
A
4
A
2
A
1
A
3
OE#
STS
WE#
DQ
15
DQ
14
DQ
6
DQ
7
GND
DQ
5
DQ
12
DQ
13
DQ
4
GND
DQ
11
VCCQ
DQ
3
DQ
2
VCC
DQ
10
DQ
9
DQ
8
DQ
0
DQ
1
A
0
A
23
CE
2
BYTE#
Intel® Embedded Flash Memory
(28FXXXJ3D)
56-Lead TSOP
Standard Pinout
14 mm x 20 mm
Top View
32/64/128/256 Mbit
24
A
Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
(Sheet 1 of 2)
Symbol Type Name and Function
A0 Input
BYTE-SELECT ADDRESS: Selects between high and low byte when the device is in x8 mode. This
address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A0 input buffer is
turned off when BYTE# is high).
A[MAX:1] Input
ADDRESS INPUTS: Inputs for addresses during read and program operations. Addresses are
internally latched during a program cycle:
32-Mbit — A[21:1]
64-Mbit— A[22:1]
128-Mbit — A[23:1]
256-Mbit — A[24:1]
D[7:0] Input/
Output
LOW-BYTE DATA BUS: Inputs data during buffer writes and programming, and inputs commands
during CUI writes. Outputs array, CFI, identifier, or status data in the appropriate read mode. Data
is internally latched during write operations.
December 2007 Datasheet
316577-06 17
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
D[15:8] Input/
Output
HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations.
Outputs array, CFI, or identifier data in the appropriate read mode; not used for Status Register
reads. Data is internally latched during write operations in x16 mode. D[15-8] float in x8 mode
CE[2:0] Input
CHIP ENABLE: Activate the 32-, 64-, 128-, and 256-Mbit devices’ control logic, input buffers,
decoders, and sense amplifiers. When the device is de-selected (see Table 16, “Chip Enable
Truth Table for 32-, 64-, 128- and 256-Mb” on page 31), power reduces to standby
levels.
All timing specifications are the same for these three signals. Device selection occurs with the first
edge of CE0, CE1, or CE2 that enables the device. Device deselection occurs with the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for
32-, 64-, 128- and 256-Mb” on page 31).
RP# Input
RESET: RP#-low resets internal automation and puts the device in power-down mode. RP#-high
enables normal operation. Exit from reset sets the device to read array mode. When driven low,
RP# inhibits write operations which provides data protection during power transitions.
OE# Input OUTPUT ENABLE: Activates the device’s outputs through the data buffers during a read cycle.
OE# is active low.
WE# Input WRITE ENABLE: Controls writes to the CUI, the Write Buffer, and array blocks. WE# is active low.
Addresses and data are latched on the rising edge of WE#.
STS Open Drain
Output
STATUS: Indicates the status of the internal state machine. When configured in level mode
(default), it acts as a RY/BY# signal. When configured in one of its pulse modes, it can pulse to
indicate program and/or erase completion. For alternate configurations of the Status signal, see the
Configurations command and Section 9.6, “Status Signal” on page 42. STS is to be tied
to VCCQ with a pull-up resistor.
BYTE# Input
BYTE ENABLE: BYTE#-low places the device in x8 mode; data is input or output on D[7:0], while
D[15:8] is placed in High-Z. Address A0 selects between the high and low byte. BYTE#-high places
the device in x16 mode, and turns off the A0 input buffer. Address A1 becomes the lowest-order
address bit.
VPEN Input
ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks, programming data, or
configuring lock-bits.
With VPEN ≤ VPENLK, memory contents cannot be altered.
VCC Power
CORE Power Supply: Core (logic) source voltage. Writes to the flash array are inhibited when VCC
≤ Vlko.
Caution: Device operation at invalid Vcc voltages should not be attempted.
VCCQ Power I/O Power Supply: Power supply for Input/Output buffers.This ball can be tied directly to VCC.
GND Supply GROUND: Ground reference for device logic voltages. Connect to system ground.
NC — No Connect: Lead is not internally connected; it may be driven or floated.
RFU — Reserved for Future Use: Balls designated as RFU are reserved by Numonyx for future device
functionality and enhancement.
Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
(Sheet 2 of 2)
Symbol Type Name and Function
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
18 316577-06
5.0 Maximum Ratings and Operating Conditions
5.1 Absolute Maximum Ratings
Warning: Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent
damage. These are stress ratings only.
5.2 Operating Conditions
Warning: Operation beyond the “Operating Conditions” is not recommended and extended
exposure beyond the “Operating Conditions” may affect device reliability
5.3 Power Up/Down
This section provides an overview of system level considerations with regards to the
flash device. It includes a brief description of power-up, power-down and decoupling
design considerations.
5.3.1 Power-Up/Down Characteristics
To prevent conditions that could result in spurious program or erase operations, the
power-up/power-down sequence shown in Tab le 6 is recommended. For DC voltage
characteristics refer to Ta b l e 8 . Note that each power supply must reach its minimum
voltage range before applying/removing the next supply voltage.
NOTICE: This document contains information available at the time of its release. The specifications are subject to change without
notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design.
Table 4: Absolute Maximum Ratings
Parameter Min Max Unit Notes
Temperature under Bias Expanded (TA, Ambient) –40 +85 °C —
Storage Temperature –65 +125 °C —
VCC Voltage –2.0 +5.6 V 2
VCCQ –2.0 +5.6 V 2
Voltage on any input/output signal (except VCC, VCCQ) –2.0 VCCQ (max) + 2.0 V 1
ISH Output Short Circuit Current — 100 mA 3
Notes:
1. Voltage is referenced to VSS. During infrequent non-periodic transitions, the voltage potential between VSS and input/
output pins may undershoot to –2.0 V for periods < 20 ns or overshoot to VCCQ (max) + 2.0 V for periods < 20 ns.
2. During infrequent non-periodic transitions, the voltage potential between VCC and the supplies may undershoot to –2.0
V for periods < 20 ns or VSUPPLY (max) + 2.0 V for periods < 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time
Table 5: Temperature and VCC Operating Condition
Symbol Parameter Min Max Unit Test Condition
TA-40.0 +85 °C Ambient Temperature
VCC VCC Supply Voltage 2.70 3.6 V —
VCCQ VCCQ Supply Voltage 2.70 3.6 V —
December 2007 Datasheet
316577-06 19
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
† Power supplies connected or sequenced together.
Device inputs must not be driven until all supply voltages reach their minimum range.
RP# should be low during power transitions.
5.3.2 Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized,
charge pumps are switched on, and internal voltage nodes are ramped. All of this
internal activities produce transient signals. The magnitude of the transient signals
depends on the device and system loading. To minimize the effect of these transient
signals, a 0.1 µF ceramic capacitor is required across each VCC/VSS and VCCQ signal.
Capacitors should be placed as close as possible to device connections.
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be
placed between VCC and VSS at the power supply connection. This 4.7 µF capacitor
should help overcome voltage slumps caused by PCB trace inductance.
5.4 Reset
By holding the flash device in reset during power-up and power-down transitions,
invalid bus conditions may be masked. The flash device enters reset mode when RP# is
driven low. In reset, internal flash circuitry is disabled and outputs are placed in a high-
impedance state. After return from reset, a certain amount of time is required before
the flash device is able to perform normal operations. After return from reset, the flash
device defaults to asynchronous page mode. If RP# is driven low during a program or
erase operation, the program or erase operation will be aborted and the memory
contents at the aborted block or address are no longer valid. See Figure 14, “AC
Waveform for Reset Operation” on page 29 for detailed information regarding reset
timings.
Table 6: Power-Up/Down Sequence
Power Supply
Voltage Power-UpSequence Power-Down Sequence
VCC(min) 1st 1st
1st†Sequencing not
required†
3rd 2nd
2nd†Sequencing not
required†
VCCQ(min) 2nd
2nd†2nd
1st†
VPEN(min) 3rd 2nd 1st 1st
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
20 316577-06
6.0 Electrical Characteristics
6.1 DC Current Specifications
Table 7: DC Current Characteristics (Sheet 1 of 2)
VCCQ 2.7 - 3.6V
Test Conditions NotesVCC 2.7 - 3.6V
Symbol Parameter Typ Max Unit
ILI Input and VPEN Load Current ±1μAVCC = VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
1
ILO Output Leakage Current ±10 μAVCC= VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
1
ICCS VCC Standby Current
32, 64, 128, 256
Mbit 50 120 μA
CMOS Inputs, VCC = VCC Max; Vccq =
VccqMax
Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31),
RP# = VCCQ ± 0.2 V
1,2,3
32, 64, 128, 256
Mbit 0.71 2 mA
TTL Inputs, VCC = VCC Max,
Vccq = VccqMax
Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31),
RP# = VIH
ICCD VCC Power-Down Current 50 120 μA RP# = GND ± 0.2 V, IOUT (STS) = 0 mA
ICCR
VCC Page Mode Read Current
4-Word
Page
15 20 mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max
Device is enabled (see Tab l e 1 6 , “ C h i p
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31)
f = 5 MHz, IOUT = 0 mA
1,3
24 29 mA
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max
Device is enabled (see Tab l e 1 6 , “ C h i p
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31)
f = 33 MHz, IOUT = 0 mA
8-Word Page
10 15 mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
Device is enabled (see Tab l e 1 6 , “ C h i p
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31)
f = 5 MHz, IOUT = 0 mA
30 54 mA
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
Device is enabled (see Tab l e 1 6 , “ C h i p
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31)
f = 33 MHz, IOUT = 0 mA
ICCW
VCC Program or Set
Lock-Bit Current
35 60 mA CMOS Inputs, VPEN = VCC 1,4
40 70 mA TTL Inputs, VPEN = VCC
December 2007 Datasheet
316577-06 21
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
6.2 DC Voltage specifications
ICCE
VCC Block Erase or
Clear Block Lock-Bits
Current
35 70 mA CMOS Inputs, VPEN = VCC 1,4
40 80 mA TTL Inputs, VPEN = VCC
ICCWS
ICCES
VCC Program
Suspend or Block
Erase Suspend
Current
10 mA
Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-,
128- and 256-Mb” on page 31)
1,5
Notes:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Numonyx or your local sales office for information about typical specifications.
2. Includes STS.
3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend
mode, the device’s current draw is ICCR and ICCWS.
Table 8: DC Voltage Characteristics (Sheet 1 of 2)
VCCQ 2.7 - 3.6 V
Test Conditions NotesVCC 2.7 - 3.6 V
Symbol Parameter Min Max Unit
VIL Input Low Voltage –0.5 0.8 V 2, 5, 6
VIH Input High Voltage 2.0 VCCQ + 0.5V V 2, 5, 6
VOL Output Low Voltage
0.4 V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 2 mA
1, 2
0.2 V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 µA
VOH Output High Voltage
0.85 × VCCQ V
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
1, 2
VCCQ – 0.2 V
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –100 µA
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations 2.2 V 2, 3
Table 7: DC Current Characteristics (Sheet 2 of 2)
VCCQ 2.7 - 3.6V
Test Conditions NotesVCC 2.7 - 3.6V
Symbol Parameter Typ Max Unit
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
22 316577-06
6.3 Capacitance
Notes:
1. sampled.not 100% tested.
2. TA = +25 °C, f = 1 MHZ
VPENH
VPEN during Block Erase, Program,
or Lock-Bit Operations 2.7 3.6 V 3
VLKO VCC Lockout Voltage 2.0 V 4
Notes:
1. Includes STS.
2. Sampled, not 100% tested.
3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed
in the range between VPENLK (max) and VPENH (min), and above VPENH (max).
4. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and not guaranteed in
the range between VLKO (min) and VCC (min), and above VCC (max).
5. Includes all operational modes of the device including standby and power-up sequences
6. Input/Output signals can undershoot to -1.0v referenced to VSS and can overshoot to VCCQ = 1.0v for
duration of 2ns or less, the VCCQ valid range is referenced to VSS.
Table 8: DC Voltage Characteristics (Sheet 2 of 2)
VCCQ 2.7 - 3.6 V
Test Conditions NotesVCC 2.7 - 3.6 V
Symbol Parameter Min Max Unit
Table 9: Capacitance
Symbol Parameter1Type Max Unit Condition2
CIN Input Capacitance 32, 64, 128, 256 Mb 68pF
VIN = 0.0 V
COUT Output Capacitance 32, 64, 128, 256 Mb 812pF
VOUT = 0.0 V
December 2007 Datasheet
316577-06 23
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
7.0 AC Characteristics
Timing symbols used in the timing diagrams within this document conform to the
following convention
Note: Exceptions to this convention include tACC and tAPA. tACC is a generic timing symbol that
refers to the aggregate initial-access delay as determined by tAVQV, tELQV
, and tGLQV
(whichever is satisfied last) of the flash device. tAPA is specified in the flash device’s
data sheet, and is the address-to-data delay for subsequent page-mode reads.
7.1 Read Specifications
Figure 7: Timing Signal Naming Convention
Figure 8: Timing Signal Name Decoder
Signal Code State Code
Address A High H
Data - Read Q Low L
Data - Write D High-Z Z
Chip Enable (CE) E Low-Z X
Output Enable (OE#) G Valid V
Write Enable (WE#) W Invalid I
Address Valid (ADV#) V
Reset (RP#) P
Clock (CLK) C
WAIT T
Table 10: Read Operations (Sheet 1 of 2)
Asynchronous Specifications VCC = 2.7 V–3.6 V (3) and VCCQ = 2.7 V–3.6 V(3)
# Sym Parameter Density Min Max Unit Notes
R1 tAVAV Read/Write Cycle Time
32 Mbit 75
ns
1,2
64 Mbit 75 1,2
128 Mbit 75 1,2
256 Mbit 95 1,2
E
t
L Q V
Source Signal Target State
Source State Target Signal
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
24 316577-06
Notes:
1. CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined as the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31).
2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3. OE# may be delayed up to tELQV-tGLQV after the first edge of CE0, CE1, or CE2 that enables the device (see Table 16,
“Chip Enable Truth Table for 32-, 64-, 128- and 256-Mb” on page 31) without impact on tELQV
.
4. See Figure 15, “AC Input/Output Reference Waveform” on page 30 and Figure 16, “Transient
Equivalent Testing Load Circuit” on page 30 for testing characteristics.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R15 (tAPA) will equal R2 (tAVQV).
R2 tAVQV Address to Output Delay
32 Mbit 75
ns
1,2
64 Mbit 75 1,2
128 Mbit 75 1,2
256 Mbit 95 1,2
R3 tELQV CEX to Output Delay
32 Mbit 75
ns
1,2
64 Mbit 75 1,2
128 Mbit 75 1,2
256 Mbit 95 1,2
R4 tGLQV OE# to Non-Array Output Delay All 25 ns 1,2,4
R5 tPHQV RP# High to Output Delay
32 Mbit 150
ns
1,2
64 Mbit 180 1,2
128 Mbit 210 1,2
256 Mbit 210 1,2
R6 tELQX CEX to Output in Low Z
All
0ns1,2,5
R7 tGLQX OE# to Output in Low Z 0 ns 1,2,5
R8 tEHQZ CEX High to Output in High Z 25 ns 1,2,5
R9 tGHQZ OE# High to Output in High Z 15 ns 1,2,5
R10 tOH
Output Hold from Address, CEX, or OE#
Change, Whichever Occurs First 0ns1,2,5
R11 tELFL/tELFH CEX Low to BYTE# High or Low 10 ns 1,2,5
R12 tFLQV/tFHQV BYTE# to Output Delay 1 µs 1,2
R13 tFLQZ BYTE# to Output in High Z 1 µs 1,2,5
R14 tEHEL CEx High to CEx Low All 0ns1,2,5
R15 tAPA Page Address Access Time 25 ns 5, 6
R16 tGLQV OE# to Array Output Delay All 25 ns 1,2,4
Table 10: Read Operations (Sheet 2 of 2)
Asynchronous Specifications VCC = 2.7 V–3.6 V (3) and VCCQ = 2.7 V–3.6 V(3)
# Sym Parameter Density Min Max Unit Notes
December 2007 Datasheet
316577-06 25
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Notes:
1. CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined as the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31).
2. When reading the flash array a faster tGLQV (R16) applies. For non-array reads, R4 applies (i.e., Status Register reads,
query reads, or device identifier reads).
Note: CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined as the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31).
Figure 9: Single Word Asynchronous Read Waveform
R11
R5
R12
R13
R10
R4
R16
R7
R6
R9
R8R3
R1
R2
R1
A
ddress [A]
CEx [E]
OE# [G]
WE# [W]
Data [D/Q]
BYTE#[F]
RP# [P]
Figure 10: 4-Word Asynchronous Page Mode Read Waveform
00 01 10 11
1 2 3 4
R10
R15
R10
R5
R9
R8
R7
R6
R4
R3
R1
R2
R1
A
[MAX:3] [A]
A[2:1] [A]
CEx [E]
OE# [G]
WE# [W]
D[15:0] [Q]
RP# [P]
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
26 316577-06
Notes:
1. CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31).
2. In this diagram, BYTE# is asserted high
Notes:
1. This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that
will use the 65nm lithography.
Figure 11: 8-Word Asynchronous Page Mode Read
1 2 7 8
R10
R15
R10
R5
R9
R8
R7
R6
R4
R3
R1
R2
R1
A
[MAX:4] [A]
A[3:1] [A]
CEx [E]
OE# [G]
WE# [W]
D[15:0] [Q]
RP# [P]
BYTE#
Table 11: AC Read Specifications differences for 65nm
Asynchronous Specifications VCC = 2.7 V–3.6 V (3) and VCCQ = 2.7 V–3.6 V(3)
# Sym Parameter Package Min Max Unit Notes
R1 tAVAV Read/Write Cycle Time
95
ns
1
TSOP 105 1
R2 tAVQV Address to Output Delay
95
ns
1
TSOP 105 1
R3 tELQV CEX to Output Delay
95
ns
1
TSOP 105 1
December 2007 Datasheet
316577-06 27
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
C
Table 12: Write Operations
# Symbol Parameter Density
Valid for All
Speeds Unit Notes
Min Max
W1 tPHWL (tPHEL) RP# High Recovery to WE# (CEX) Going Low
32 Mbit 150
ns
1,2,3
64 Mbit 180
128 Mbit 210
256 Mbit 210
W2 tELWL (tWLEL)CE
X (WE#) Low to WE# (CEX) Going Low
All
01,2,4
W3 tWP Write Pulse Width 60 1,2,4
W4 tDVWH (tDVEH) Data Setup to WE# (CEX) Going High 50 1,2,5
W5 tAVWH (tAVEH) Address Setup to WE# (CEX) Going High 55 1,2,5
W6 tWHEH (tEHWH)CE
X (WE#) Hold from WE# (CEX) High 0 1,2,
W7 tWHDX (tEHDX) Data Hold from WE# (CEX) High 0 1,2,
W8 tWHAX (tEHAX) Address Hold from WE# (CEX) High 0 1,2,
W9 tWPH Write Pulse Width High 30 1,2,6
W11 tVPWH (tVPEH)V
PEN Setup to WE# (CEX) Going High 0 1,2,3
W12 tWHGL (tEHGL) Write Recovery before Read 35 1,2,7
W13 tWHRL (tEHRL)WE# (CE
X) High to STS Going Low 500 1,2,8
W15 tQVVL VPEN Hold from Valid SRD, STS Going High 0 1,2,3,8,9
Notes:
CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of CE0, CE1, or CE2 that
disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and 256-Mb” on page 31).
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics–Read-Only Operations.
2. A write operation can be initiated and terminated with either CEX or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low last) to CEX or WE# going high
(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH.
5. Refer to Table 17, “Enhanced Configuration Register” on page 33 for valid AIN and DIN for block erase,
program, or lock-bit configuration.
6. Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or WE# going
low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
7. For array access, tAVQV is required in addition to tWHGL for any accesses after a write.
8. STS timings are based on STS configured in its RY/BY# default mode.
9. VPEN should be held at VPENH until determination of block erase, program, or lock-bit configuration success (SR[5:3,1] =
0).
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
28 316577-06
Figure 12: Asynchronous Write Waveform
D
W11
W1
W13
W7W4
W9W9W3W3W2
W6
W8W5
ADDRESS [A]
CEx (WE#) [E (W)]
WE# (CE x) [W (E)]
OE# [G]
DATA [D/Q]
STS[R]
RP# [P]
VPEN [V]
Figure 13: Asynchronous Write to Read Waveform
D
W11
W1
W7W4
W12
W3W3W2
W6
W8W5
A d d re ss [ A ]
CE# [E]
WE# [W]
OE# [G]
Data [D/Q]
RST #/ RP# [P]
VPEN [V]
December 2007 Datasheet
316577-06 29
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
7.2 Program, Erase, Block-Lock Specifications
7.3 Reset Specifications
Note: STS is shown in its default mode (RY/BY#)
Table 13: Configuration Performance
# Symbol Parameter Typ Max(8) Unit Notes
W16 Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words) 128 654 µs 1,2,3,4,5,6,7
W16 tWHQV3
tEHQV3
Byte Program Time (Using Word/Byte Program Command)
for 130nm 40 175 µs 1,2,3,4
Byte Program Time (Using Word/Byte Program Command)
for 65nm 125 150 µs 1,2,3,4
Block Program Time (Using Write to Buffer Command) 0.53 2.4 sec 1,2,3,4
W16 tWHQV4
tEHQV4
Block Erase Time 1.0 4.0 sec 1,2,3,4
W16 tWHQV5
tEHQV5
Set Lock-Bit Time 50 60 µs 1,2,3,4,9
W16 tWHQV6
tEHQV6
Clear Block Lock-Bits Time 0.5 0.70 sec 1,2,3,4,9
W16 tWHRH1
tEHRH1
Program Suspend Latency Time to Read 15 20 µs 1,2,3,9
W16 tWHRH
tEHRH
Erase Suspend Latency Time to Read 15 20 µs 1,2,3,9
WY tSTS STS Pulse Width Low Time 500 ns 1
Notes:
1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1, tEHQV1) is 4µs/byte (typical).
7. Effective per-word program time (tWHQV2, tEHQV2) is 8µs/word (typical).
8. Max values are measured at worst case temperature, data pattern and VCC corner after 100k cycles (except as noted).
9. Max values are expressed at 25 °C/-40 °C.
Figure 14: AC Waveform for Reset Operation
P3
P1 P2P1
STS (R)
RP# (P)
Vcc
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
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7.4 AC Test Conditions
Note: AC test inputs are driven at VCCQ for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at
VCCQ/2 V (50% of VCCQ). Input rise and fall times (10% to 90%) < 5 ns.
Note: CL Includes Jig Capacitance
Table 14: Reset Specifications
# Symbol Parameter Min Max Unit Notes
P1 tPLPH
RP# Pulse Low Time
(If RP# is tied to VCC, this specification is not applicable) 25 µs 1,2
P2 tPHRH
RP# High to Reset during Block Erase, Program, or Lock-Bit
Configuration 100 ns 1,3
P3 tVCCPH
Vcc Power Valid to RP# de-assertion (high) 130nm
Vcc Power Valid to RP# de-assertion (high) 65nm
60 µs
300 µs
Notes:
1. These specifications are valid for all product versions (packages and speeds).
2. If RP# is asserted while a block erase, program, or lock-bit configuration operation is not executing then the
minimum required RP# Pulse Low Time is 100 ns.
3. A reset time, tPHQV
, is required from the latter of STS (in RY/BY# mode) or RP# going high until outputs are
valid.
Figure 15: AC Input/Output Reference Waveform
Figure 16: Transient Equivalent Testing Load Circuit
Figure 17: Test Configuration
Test Configuration CL (pF)
VCCQ = VCCQMIN 30
Outpu
t
Test PointsInput V
CCQ
/2
V
CCQ
0.0
V
CCQ
/2
Device
Under Test C
L
Out
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
8.0 Bus Interface
This section provides an overview of Bus operations. Basically, there are three
operations you can do with flash memory: Read, Program (Write), and Erase.The on-
chip Write State Machine (WSM) manages all erase and program algorithms. The
system CPU provides control of all in-system read, write, and erase operations through
the system bus. All bus cycles to or from the flash memory conform to standard
microprocessor bus cycles. Ta b l e 1 5 summarizes the necessary states of each control
signal for different modes of operations.
Notes:
1. See Ta bl e 1 6 for valid CEx Configurations.
2. OE# and WE# should never be asserted simultaneously. If done so, OE# overrides WE#.
3. DQ refers to DQ[7:0} when BYTE# is low and DQ[15:0] if BYTE# is high.
4. Refer to DC characteristics. When VPEN ≤ VPENLK, memory contents can be read but not altered.
5. X should be VIL or VIH for the control pins and VPENLK or VPENH for VPEN. For outputs, X should be VOL or VOH.
6. In default mode, STS is VOL when the WSM is executing internal block erase, program, or a lock-bit configuration
algorithm. It is VOH (pulled up by an external pull up resistance ~= 10k) when the WSM is not busy, in block erase
suspend mode (with programming inactive), program suspend mode, or reset power-down mode.
7. See Table 19, “Command Bus Operations” on page 35 for valid DIN (user commands) during a Write
operation
8. Array writes are either program or erase operations. /
The next few sections detail each of the basic flash operations and some of the
advanced features available on flash memory.
Table 15: Bus Operations
Mode RP# CEx(1) OE#(2) WE#(2) VPEN DQ15:0(3) STS
(Default
Mode)
Notes
Async., Status, Query and
Identifier Reads VIH Enabled VIL VIH XD
OUT High Z 4,6
Output Disable VIH Enabled VIH VIH X High Z High Z
Standby VIH
Disable
dX X X High Z High Z
Reset/Power-down VIL XXXXHigh ZHigh Z
Command Writes VIH Enabled VIH VIL XD
IN High Z 6,7
Array Writes(8) VIH Enabled VIH VIL VPENH XV
IL 8,5
Table 16: Chip Enable Truth Table for 32-, 64-, 128- and 256-Mb
CE2 CE1 CE0 DEVICE
VIL VIL VIL Enabled
VIL VIL VIH Disabled
VIL VIH VIL Disabled
VIL VIH VIH Disabled
VIH VIL VIL Enabled
VIH VIL VIH Enabled
VIH VIH VIL Enabled
VIH VIH VIH Disabled
Note: For single-chip applications, CE2 and CE1 can be connected to GND.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
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8.1 Bus Reads
Reading from flash memory outputs stored information to the processor or chipset, and
does not change any contents. Reading can be performed an unlimited number of
times. Besides array data, other types of data such as device information and device
status is available from the flash.
To perform a bus read operation, CEx (refer to Table 16 on page 31) and OE# must be
asserted. CEx is the device-select control; when active, it enables the flash memory
device. OE# is the data-output control; when active, the addressed flash memory data
is driven onto the I/O bus. For all read states, WE# and RP# must be de-asserted. See
Section 9.2, “Read Operations” on page 37.
8.1.1 Asynchronous Page Mode Read
There are two Asynchronous Page mode configurations available on Numonyx™
Embedded Flash Memory (J3 v D, Monolithic) , depending on the system design
requirements:
• Four-Word Page mode: This is the default mode on power-up or reset. Array data
can be sensed up to four words (8 Bytes) at a time.
• Eight-Word Page mode: Array data can be sensed up to eight words (16 Bytes) at a
time. This mode must be enabled on power-up or reset by using the command
sequence described in Table 19 on page 35. Address bits A[3:1] determine which
word is output during a read operation, and A[3:0] determine which byte is output
for a x8 bus width.
After the initial access delay, the first word out of the page buffer corresponds to the
initial address. In Four-Word Page mode, address bits A[2:1] determine which word is
output from the page buffer for a x16 bus width, and A[2:0] determine which byte is
output from the page buffer for a x8 bus width. Subsequent reads from the device
come from the page buffer. These reads are output on D[15:0] for a x16 bus width and
D[7:0] for a x8 bus width after a minimum delay as long as A[2:0] (Four-Word Page
mode) or A[3:0] (Eight-Word Page mode).
Data can be read from the page buffer multiple times, and in any order. In Four-Word
Page mode, if address bits A[MAX:3] (A[MAX:4] for Eight-Word Page Mode) change at
any time, or if CEx# is toggled, the device will sense and load new data into the page
buffer. Asynchronous Page mode is the default read mode on power-up or reset.
To perform a Page mode read after any other operation, the Read Array command must
be issued to read from the flash array. Asynchronous Page mode reads are permitted in
all blocks and are used to access register information. During register access, only one
word is loaded into the page buffer.
8.1.1.1 Enhanced Configuration Register
The Enhanced Configuration Register (ECR) is a volatile storage register that when
addressed by the Set ECR command can select between Four-Word Page mode and
Eight-Word Page mode. The ECR is volatile; all bits will be reset to default values when
RP# is deasserted or power is removed from the device. To modify ECR settings, use
the Set ECR command. The Set ECR command is written along with the configuration
register value, which is placed on the lower 16 bits of the address bus A[15:0]. This is
followed by a second write that confirms the operation and again presents the ECR data
on the address bus. After executing this command, the device returns to Read Array
mode.
The ECR is shown in Ta b le 1 7 . 8-word page mode Command Bus-Cycle is captured in
Ta b l e 1 8 .
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Note: For forward compatibility reasons, if the 8-word Asynchronous Page mode is used on
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) , a Clear Status Register
command must be executed after issuing the Set ECR command. See Tab l e 1 8 for
further details.
8.1.2 Output Disable
With CEx asserted, and OE# at a logic-high level (VIH), the device outputs are disabled.
Output signals D[15:0] are placed in a high-impedance state.
8.2 Bus Writes
Writing or Programming to the device, is where the host writes information or data into
the flash device for non-volatile storage. When the flash device is programmed, ‘ones’
are changed to ‘zeros’. ‘Zeros’ cannot be programed back to ‘ones’. To do so, an erase
operation must be performed. Writing commands to the Command User Interface (CUI)
enables various modes of operation, including the following:
• Reading of array data
• Common Flash Interface (CFI) data
• Identifier codes, inspection, and clearing of the Status Register
• Block Erasure, Program, and Lock-bit Configuration (when VPEN = VPENH)
Erasing is performed on a block basis – all flash cells within a block are erased together.
Any information or data previously stored in the block will be lost. Erasing is typically
done prior to programming. The Block Erase command requires appropriate command
data and an address within the block to be erased. The Byte/Word Program command
requires the command and address of the location to be written. Set Block Lock-Bit
commands require the command and block within the device to be locked. The Clear
Block Lock-Bits command requires the command and address within the device to be
cleared.
Table 17: Enhanced Configuration Register
Reserved Page
Length Reserved
ECR
15
ECR
14
ECR
13
ECR
12
ECR
11
ECR
10
ECR
9
ECR
8
ECR
7
ECR
6
ECR
5
ECR
4
ECR
3
ECR
2
ECR
1
ECR
0
BITS DESCRIPTION NOTES
ECR[15:14] RFU All bits should be set to 0.
ECR[13] • “1” = 8 Word Page mode
• “0” = 4 Word Page mode
ECR[12:0] RFU All bits should be set to 0.
Table 18: Asynchronous 8-Word Page Mode Command Bus-Cycle Definition
Command
Bus
Cycles
Required
First Bus Cycle Second Bus Cycle
Oper Addr(1) Data Oper Addr(1) Data
Set Enhanced Configuration
Register (Set ECR) 2 Write ECD 0060h Write ECD 0004h
1.. ECD = Enhanced Configuration Register Data
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Datasheet December 2007
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The CUI does not occupy an addressable memory location. It is written when the device
is enabled and WE# is active. The address and data needed to execute a command are
latched on the rising edge of WE# or the first edge of CE0, CE1, or CE2 that disables
the device (see Table 16 on page 31). Standard microprocessor write timings are used.
8.3 Standby
CE0, CE1, and CE2 can disable the device (see Table 16 on page 31) and place it in
standby mode. This manipulation of CEx substantially reduces device power
consumption. D[15:0] outputs are placed in a high-impedance state independent of
OE#. If deselected during block erase, program, or lock-bit configuration, the WSM
continues functioning, and consuming active power until the operation completes.
8.3.1 Reset/Power-Down
RP# at VIL initiates the reset/power-down mode.
In read modes, RP#-low deselects the memory, places output drivers in a high-
impedance state, and turns off numerous internal circuits. RP# must be held low for a
minimum of tPLPH. Time tPHQV is required after return from reset mode until initial
memory access outputs are valid. After this wake-up interval, normal operation is
restored. The CUI is reset to read array mode and Status Register is set to 0080h.
During Block Erase, Program, or Lock-Bit Configuration modes, RP#-low will abort the
operation. In default mode, STS transitions low and remains low for a maximum time
of tPLPH + tPHRH until the reset operation is complete. Memory contents being altered
are no longer valid; the data may be partially corrupted after a program or partially
altered after an erase or lock-bit configuration. Time tPHWL is required after RP# goes to
logic-high (VIH) before another command can be written.
As with any automated device, it is important to assert RP# during system reset. When
the system comes out of reset, it expects to read from the flash memory. Automated
flash memories provide status information when accessed during Block Erase, Program,
or Lock-Bit Configuration modes. If a CPU reset occurs with no flash memory reset,
proper initialization may not occur because the flash memory may be providing status
information instead of array data. Numonyx Flash memories allow proper initialization
following a system reset through the use of the RP# input. In this application, RP# is
controlled by the same RESET# signal that resets the system CPU.
8.4 Device Commands
When VPEN ≤ VPENLK, only read operations from the Status Register, CFI, identifier
codes, or blocks are enabled. Placing VPENH on VPEN additionally enables block erase,
program, and lock-bit configuration operations. Device operations are selected by
writing specific commands to the Command User Interface (CUI). The CUI does not
occupy an addressable memory location. It is the mechanism through which the flash
device is controlled.
A command sequence is issued in two consecutive write cycles - a Setup command
followed by a Confirm command. However, some commands are single-cycle
commands consisting of a setup command only. Generally, commands that alter the
contents of the flash device, such as Program or Erase, require at least two write cycles
to guard against inadvertent changes to the flash device. Flash commands fall into two
categories: Basic Commands and Extended Commands. Basic commands are
recognized by all Numonyx Flash devices, and are used to perform common flash
operations such as selecting the read mode, programming the array, or erasing blocks.
Extended commands are product-dependant; they are used to perform additional
features such as software block locking. Ta b le 1 9 describes all applicable commands on
Numonyx™ Embedded Flash Memory (J3 v D) .
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Table 19: Command Bus Operations
Command
Setup Write Cycle Confirm Write Cycle
Address Bus Data
Bus Address Bus Data Bus
Registers
Program Enhanced Configuration Register Register Data 0060h Register Data 0004h
Program OTP Register Device Address 00C0h Register Offset Register Data
Clear Status Register Device Address 0050h --- ---
Program STS Configuration Register Device Address 00B8h Device Address Register Data
Read Modes
Read Array Device Address 00FFh --- ---
Read Status Register Device Address 0070h --- ---
Read Identifier Codes (Read Device Information) Device Address 0090h --- ---
CFI Query Device Address 0098h --- ---
Program and Erase
Word/Byte Program Device Address 0040h/
0010h Device Address Array Data
Buffered Program Word Address 00E8h Device Address 00D0h
Block Erase Block Address 0020h Block Address 00D0h
Program/Erase Suspend Device Address 00B0h --- ---
Program/Erase Resume Device Address 00D0h --- ---
Security
Lock Block Block Address 0060h Block Address 0001h
Unlock Block Device Address 0060h Device Address 00D0h
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Datasheet December 2007
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9.0 Flash Operations
This section describes the operational features of flash memory. Operations are
command-based, wherein command codes are first issued to the device, then the
device performs the desired operation. All command codes are issued to the device
using bus-write cycles (see Chapter 8.0, “Bus Interface”). A complete list of available
command codes can be found in Section 11.0, “Device Command Codes” on page 48.
9.1 Status Register
The Status Register (SR) is an 8-bit, read-only register that indicates device status and
operation errors. To read the Status Register, issue the Read Status Register command.
Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8].
SR status bits are set and cleared by the device. SR error bits are set by the device, but
must be cleared using the Clear Status Register command. Upon power-up or exit from
reset, the Status Register defaults to 80h. Page-mode reads are not supported in this
read mode. Status Register contents are latched on the falling edge of OE# or the first
edge of CEx that enables the device. OE# must toggle to VIH or the device must be
disabled before further reads to update the Status Register latch. The Read Status
Register command functions independently of VPEN voltage.
Ta b l e 2 0 shows Status Register bit definitions.
Table 20: Status Register Bit Definitions
Status Register (SR) Default Value = 80h
Ready
Status
Erase
Suspend
Status
Erase
Error
Program
Error
Program/
Erase
Voltage
Error
Program
Suspend
Status
Block-Locked
Error
76543 2 1 0
Bit Name Description
7Ready Status 0 = Device is busy; SR[6:] are invalid (Not driven);
1 = Device is ready; SR[6:0] are valid.
6 Erase Suspend Status 0 = Erase suspend not in effect.
1 = Erase suspend in effect.
5Erase Error Command
Sequence
Error
SR.5 SR.4
0 0 = Program or erase operation successful.
0 1 = Program error - operation aborted.
1 0 = Erase error - operation aborted.
1 1 = Command sequence error - command aborted.
4Program
Error
3 Error
0 = within acceptable limits during program or erase operation.
1 = not within acceptable limits during program or erase operation. Operation
aborted.
2 Program Suspend Status 0 = Program suspend not in effect.
1 = Program suspend in effect.
1Block-Locked Error 0 = Block NOT locked during program or erase - operation successful.
1 = Block locked during program or erase - operation aborted.
0
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
9.1.1 Clearing the Status Register
The Status Register (SR) contain Status and error bits which are set by the device. SR
status bits are cleared by the device, however SR error bits are cleared by issuing the
Clear SR command (see Ta b l e 2 1 ). Resetting the device also clears the SR.
Issuing the Clear SR command places the device in Read SR mode.
Note: Care should be taken to avoid SR ambiguity. If a command sequence error occurs while
in an Erase Suspend condition, the SR will indicate a Command Sequence error by
setting SR.4 and SR.5. When the erase operation is resumed (and finishes), any errors
that may have occurred during the erase operation will be masked by the Command
Sequence error. To avoid this situation, clear the Status Register prior to resuming a
suspended erase operation. The Clear SR command functions independent of the
voltage level on VPEN.
9.2 Read Operations
Four types of data can be read from the device: array data, device information, CFI
data, and device status. Upon power-up or return from reset, the device defaults to
Read Array mode. To change the device’s read mode, the appropriate command must
be issued to the device. Table 22 shows the command codes used to configure the
device for the desired read mode. The following sections describe each read mode.
9.2.1 Read Array
Upon power-up or return from reset, the device defaults to Read Array mode. Issuing
the Read Array command places the device in Read Array mode. Subsequent reads
output array data on DQ[15:0]. The device remains in Read Array mode until a
different read command is issued, or a program or erase operation is performed, in
which case, the read mode is automatically changed to Read Status.
To change the device to Read Array mode while it is programming or erasing, first issue
the Suspend command. After the operation has been suspended, issue the Read Array
command. When the program or erase operation is subsequently resumed, the device
will automatically revert back to Read Status mode.
Table 21: Clear Status Register Command Bus-Cycle
Command Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Clear Status Register Device Address 0050h --- ---
Table 22: Read Mode Command Bus-Cycles
Command Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Read Array Device Address 00FFh --- ---
Read Status Register Device Address 0070h --- ---
Read Device Information Device Address 0090h --- ---
CFI Query Device Address 0098h --- ---
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Datasheet December 2007
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Note: Issuing the Read Array command to the device while it is actively programming or
erasing causes subsequent reads from the device to output invalid data. Valid array
data is output only after the program or erase operation has finished.
The Read Array command functions independent of the voltage level on VPEN.
9.2.2 Read Status Register
Issuing the Read Status Register command places the device in Read Status Register
mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8]. The device remains in Read Status Register mode until a different read-
mode command is issued. Performing a program, erase, or block-lock operation also
changes the device’s read mode to Read Status Register mode.
The Status Register is updated on the falling edge of CE, or OE# when CE is active.
Status Register contents are valid only when SR.7 = 1. When WSM is active, SR.7
indicates the WSM’s state and SR[6:0] are in high-Z state.
The Read Status Register command functions independent of the voltage level on
VPEN.
9.2.3 Read Device Information
Issuing the Read Device Information command places the device in Read Device
Information mode. Subsequent reads output device information on DQ[15:0].
The device remains in Read Device Information mode until a different read command is
issued. Also, performing a program, erase, or block-lock operation changes the device
to Read Status Register mode.
The Read Device Information command functions independent of the voltage level on
VPEN.
9.2.4 CFI Query
The CFI query table contains an assortment of flash product information such as block
size, density, allowable command sets, electrical specifications, and other product
information. The data contained in this table conforms to the (CFI) protocol.
Issuing the CFI Query command places the device in CFI Query mode. Subsequent
reads output CFI information on DQ[15:0]. The device remains in CFI Query mode until
a different read command is issued, or a program or erase operation is performed,
which changes the read mode to Read Status Register mode.
The CFI Query command functions independent of the voltage level on VPEN.
9.3 Programming Operations
All programming operations require the addressed block to be unlocked, and a valid
VPEN voltage applied throughout the programming operation. Otherwise, the
programming operation will abort, setting the appropriate Status Register error bit(s).
The following sections describe each programming method.
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
9.3.1 Single-Word/Byte Programming
Array programming is performed by first issuing the Single-Word/Byte Program
command. This is followed by writing the desired data at the desired array address. The
read mode of the device is automatically changed to Read Status Register mode, which
remains in effect until another read-mode command is issued.
During programming, STS and the Status Register indicate a busy status (SR.7 = 0).
Upon completion, STS and the Status Register indicate a ready status (SR.7 = 1). The
Status Register should be checked for any errors (SR.4), then cleared.
Note: Issuing the Read Array command to the device while it is actively programming causes
subsequent reads from the device to output invalid data. Valid array data is output only
after the program operation has finished.
Standby power levels are not be realized until the programming operation has finished.
Also, asserting RP# aborts the programming operation, and array contents at the
addressed location are indeterminate. The addressed block should be erased, and the
data re-programmed. If a Single-Word/Byte program is attempted when the
corresponding block lock-bit is set, SR.1 and SR.4 will be set.
9.3.2 Buffered Programming
Buffered programming operations simultaneous program multiple words into the flash
memory array, significantly reducing effective word-write times. User-data is first
written to a write buffer, then programmed into the flash memory array in buffer-size
increments. For additional details, see the flow chart of the buffered-programming
operation.
Note: Optimal performance and power consumption is realized only by aligning the start
address on 32-word boundaries (i.e., A[4:0] = 0b00000b). Crossing a 32-word
boundary during a buffered programming operation can cause programming time to
double.
To perform a buffered programming operation, first issue the Buffered Program setup
command at the desired starting address. The read mode of the device/addressed
partition is automatically changed to Read Status Register mode.
Polling SR.7 determines write-buffer availability (0 = not available, 1 = available). If
the write buffer is not available, re-issue the setup command and check SR.7; repeat
until SR.7 = 1.
Next, issue the word count at the desired starting address. The word count represents
the total number of words to be written into the write buffer, minus one. This value can
range from 00h (one word) to a maximum of 1Fh (32 words). Exceeding the allowable
range causes an abort.
Following the word count, the write buffer is filled with user-data. Subsequent bus-
write cycles provide addresses and data, up to the word count. All user-data addresses
must lie between <starting address> and <starting address + word count>, otherwise
the WSM continues to run as normal but, user may advertently change the content in
unexpected address locations.
Note: User-data is programmed into the flash array at the address issued when filling the
write buffer.
After all user-data is written into the write buffer, issue the confirm command. If a
command other than the confirm command is issued to the device, a command
sequence error occurs and the operation aborts.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
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Note: After issuing the confirm command, write-buffer contents are programmed into the
flash memory array. The Status Register indicates a busy status (SR.7 = 0) during
array programming.Issuing the Read Array command to the device while it is actively
programming or erasing causes subsequent reads from the device to output invalid
data. Valid array data is output only after the program or erase operation has finished.
Upon completion of array programming, the Status Register indicates ready (SR.7 = 1).
A full Status Register check should be performed to check for any programming errors,
then cleared by using the Clear Status Register command.
Additional buffered programming operations can be initiated by issuing another setup
command, and repeating the buffered programming bus-cycle sequence. However, any
errors in the Status Register must first be cleared before another buffered
programming operation can be initiated.
9.4 Block Erase Operations
Erasing a block changes ‘zeros’ to ‘ones’. To change ones to zeros, a program operation
must be performed (see Section 9.3, “Programming Operations”). Erasing is performed
on a block basis - an entire block is erased each time an erase command sequence is
issued. Once a block is fully erased, all addressable locations within that block read as
logical ones (FFFFh). Only one block-erase operation can occur at a time, and is not
permitted during a program suspend.
To perform a block-erase operation, issue the Block Erase command sequence at the
desired block address. Table 23, “Block-Erase Command Bus-Cycle” on page 40 shows
the two-cycle Block Erase command sequence.
Note: A block-erase operation requires the addressed block to be unlocked, and a valid
voltage applied to VPEN throughout the block-erase operation. Otherwise, the
operation will abort, setting the appropriate Status Register error bit(s).
The Erase Confirm command latches the address of the block to be erased. The
addressed block is preconditioned (programmed to all zeros), erased, and then verified.
The read mode of the device is automatically changed to Read Status Register mode,
and remains in effect until another read-mode command is issued.
During a block-erase operation, STS and the Status Register indicates a busy status
(SR.7 = 0). Upon completion, STS and the Status Register indicates a ready status
(SR7 = 1). The Status Register should be checked for any errors, then cleared. If any
errors did occur, subsequent erase commands to the device are ignored unless the
Status Register is cleared.
The only valid commands during a block erase operation are Read Array, Read Device
Information, CFI Query, and Erase Suspend. After the block-erase operation has
completed, any valid command can be issued.
Note: Issuing the Read Array command to the device while it is actively erasing causes
subsequent reads from the device to output invalid data. Valid array data is output only
after the block-erase operation has finished.
Table 23: Block-Erase Command Bus-Cycle
Command Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Block Erase Device Address 0020h Block Address 00D0h
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Standby power levels are not be realized until the block-erase operation has finished.
Also, asserting RP# aborts the block-erase operation, and array contents at the
addressed location are indeterminate. The addressed block should be erased before
programming within the block is attempted.
9.5 Suspend and Resume
An erase or programming operation can be suspended to perform other operations, and
then subsequently resumed. Table 24 shows the Suspend and Resume command bus-
cycles.
Note: All erase and programming operations require the addressed block to remain unlocked
with a valid voltage applied to VPEN throughout the suspend operation. Otherwise, the
block-erase or programming operation will abort, setting the appropriate Status
Register error bit(s). Also, asserting RP# aborts suspended block-erase and
programming operations, rendering array contents at the addressed location(s)
indeterminate.
To suspend an on-going erase or program operation, issue the Suspend command to
any device address. The program or erase operation suspends at pre-determined points
during the operation after a delay of tSUSP
. Suspend is achieved whenSTS (in RY/BY#
mode) goes high, SR[7,6] = 1 (erase-suspend) or SR[7,2] = 1 (program-suspend).
Note: Issuing the Suspend command does not change the read mode of the device. The
device will be in Read Status Register mode from when the erase or program command
was first issued, unless the read mode was changed prior to issuing the Suspend
command.
Not all commands are allowed when the device is suspended. Ta b le 2 5 shows which
device commands are allowed during Program Suspend or Erase Suspend.
Table 24: Suspend and Resume Command Bus-Cycles
Command Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Suspend Device Address 00B0h --- ---
Resume Device Address 00D0h --- ---
Table 25: Valid Commands During Suspend (Sheet 1 of 2)
Device Command Program Suspend Erase Suspend
STS Configuration Allowed Allowed
Read Array Allowed Allowed
Read Status Register Allowed Allowed
Clear Status Register Allowed Allowed
Read Device Information Allowed Allowed
CFI Query Allowed Allowed
Word Program Not Allowed Allowed
Buffered Program Not Allowed Allowed
Block Erase Not Allowed Not Allowed
Program Suspend Not Allowed Allowed
Erase Suspend Not Allowed Not Allowed
Program/Erase Resume Allowed Allowed
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
42 316577-06
During Suspend, array-read operations are not allowed in blocks being erased or
programmed.
A block-erase under program-suspend is not allowed. However, word-program under
erase-suspend is allowed, and can be suspended. This results in a simultaneous erase-
suspend/ program-suspend condition, indicated by SR[7,6,2] = 1.
To resume a suspended program or erase operation, issue the Resume command to
any device address. The read mode of the device is automatically changed to Read
Status Register. The operation continues where it left off, STS (in RY/BY# mode) goes
low, and the respective Status Register bits are cleared.
When the Resume command is issued during a simultaneous erase-suspend/ program-
suspend condition, the programming operation is resumed first. Upon completion of the
programming operation, the Status Register should be checked for any errors, and
cleared. The resume command must be issued again to complete the erase operation.
Upon completion of the erase operation, the Status Register should be checked for any
errors, and cleared.
9.6 Status Signal
The STATUS (STS) signal can be configured to different states using the STS
Configuration command (Ta b le 2 6 ). Once the STS signal has been configured, it
remains in that configuration until another Configuration command is issued or RP# is
asserted low. Initially, the STS signal defaults to RY/BY# operation where RY/BY# low
indicates that the WSM is busy. RY/BY# high indicates that the state machine is ready
for a new operation or suspended. Ta b le 2 7 displays possible STS configurations.
To reconfigure the STATUS (STS) signal to other modes, the Configuration command is
given followed by the desired configuration code. The three alternate configurations are
all pulse mode for use as a system interrupt as described in the following paragraphs.
For these configurations, bit 0 controls Erase Complete interrupt pulse, and bit 1
controls Program Complete interrupt pulse. Supplying the 00h configuration code with
the Configuration command resets the STS signal to the default RY/BY# level mode.
The Configuration command may only be given when the device is not busy or
suspended. Check SR.7 for device status. An invalid configuration code will result in
SR.4 and SR.5 being set.
Note: STS Pulse mode is not supported in the Clear Lock Bits and Set Lock Bit commands.
Lock Block Not Allowed Not Allowed
Unlock Block Not Allowed Not Allowed
Program OTP Register Not Allowed Not Allowed
Table 25: Valid Commands During Suspend (Sheet 2 of 2)
Device Command Program Suspend Erase Suspend
Table 26: STS Configuration Register
Command
Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
STS Configuration Device Address 00B8h Device Address Register Data
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
9.7 Security and Protection
Numonyx™ Embedded Flash Memory (J3 v D) device offer both hardware and software
security features. Block lock operations, PRs and VPEN allow users to implement
various levels of data protection.
9.7.1 Normal Block Locking
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) has the unique capability of
Flexible Block Locking (locked blocks remain locked upon reset or power cycle): All
blocks are unlocked at the factory. Blocks can be locked individually by issuing the Set
Block Lock Bit command sequence to any address within a block. Once locked, blocks
remain locked when power is removed, or when the device is reset.
All locked blocks are unlocked simultaneously by issuing the Clear Block Lock Bits
command sequence to any device address. Locked blocks cannot be erased or
programmed. Ta b l e 2 8 summarizes the command bus-cycles.
After issuing the Set Block Lock Bit setup command or Clear Block Lock Bits setup
command, the device’s read mode is automatically changed to Read Status Register
mode. After issuing the confirm command, completion of the operation is indicated by
STS (in RY/BY# mode) going high and SR.7 = 1.
Blocks cannot be locked or unlocked while programming or erasing, or while the device
is suspended. Reliable block lock and unlock operations occur only when VCC and VPEN
are valid. When VPEN ≤ VPENLK, block lock-bits cannot be changed.
Table 27: STS Configuration Coding Definitions
D7 D6 D5 D4 D3 D2 D1 D0
Reserved3
Pulse on
Program
Complete
(1)
Pulse on
Erase
Complete
(1)
D[1:0] = STS Configuration Codes Notes
00 = default, level mode;
device ready indication
Controls HOLD to a memory controller to prevent accessing a flash memory
subsystem while any flash device's WSM is busy.
01 = pulse on Erase Complete
Generates a system interrupt pulse when any flash device in an array has
completed a block erase. Helpful for reformatting blocks after file system free
space reclamation or “cleanup.”
10 = pulse on Program Complete Not supported on this device.
11 = pulse on Erase or Program Complete
Generates system interrupts to trigger servicing of flash arrays when either
erase or program operations are completed, when a common interrupt service
routine is desired.
Notes:
1. When configured in one of the pulse modes, STS pulses low with a typical pulse width of 500 ns.
2. An invalid configuration code will result in both SR.4 and SR.5 being set.
3. Reserved bits are invalid should be ignored.
Table 28: Block Locking Command Bus-Cycles
Command Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Set Block Lock Bit Block Address 0060h Block Address 0001h
Clear Block Lock Bits Device Address 0060h Device Address 00D0h
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
44 316577-06
When the set lock-bit operation is complete, SR.4 should be checked for any error.
When the clear lock-bit operation is complete, SR.5 should be checked for any error.
Errors bits must be cleared using the Clear Status Register command.
Block lock-bit status can be determined by first issuing the Read Device Information
command, and then reading from <block base address> + 02h. DQ0 indicates the lock
status of the addressed block (0 = unlocked, 1 = locked).
9.7.2 Configurable Block Locking
One of the unique new features on the Numonyx™ Embedded Flash Memory (J3 v D,
Monolithic) ,which did not exist on the previous generations of this product family, is
the ability to protect and/or secure the user’s system by offering multiple level of
securities: Non-Volatile Temporary; Non-Volatile Semi-Permanent or Non-Volatile
Permanent. For additional information and collateral request, please contact your filed
representative.
9.7.3 OTP Protection Registers
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic) includes a 128-bit Protection
Register (PR) that can be used to increase the security of a system design. For
example, the number contained in the PR can be used to “match” the flash component
with other system components such as the CPU or ASIC, hence preventing device
substitution.
The 128-bits of the PR are divided into two 64-bit segments:
• One segment is programmed at the Numonyx factory with a unique unalterable 64-
bit number.
• The other segment is left blank for customer designers to program as desired. Once
the customer segment is programmed, it can be locked to prevent further
programming.
9.7.4 Reading the OTP Protection Register
The Protection Register is read in Identification Read mode. The device is switched to
this mode by issuing the Read Identifier command (0090h). Once in this mode, read
cycles from addresses shown in Table 29, “Word-Wide Protection Register Addressing”
or Table 30, “Byte-Wide Protection Register Addressing” retrieve the specified
information. To return to Read Array mode, write the Read Array command (00FFh).
9.7.5 Programming the OTP Protection Register
PR bits are programmed using the two-cycle Protection Program command. The 64-bit
number is programmed 16 bits at a time for word-wide configuration and eight bits at a
time for byte-wide configuration. First write the Protection Program Setup command,
00C0h. The next write to the device will latch in address and data and program the
specified location. The allowable addresses are shown in Table 29, “Word-Wide
Protection Register Addressing” on page 45 or Table 30, “Byte-Wide Protection Register
Addressing” on page 46. See Figure 27, “Protection Register Programming Flowchart”
on page 57. Any attempt to address Protection Program commands outside the defined
PR address space will result in a Status Register error (SR.4 will be set). Attempting to
program a locked PR segment will result in a Status Register error (SR.4 and SR.1 will
be set).
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
9.7.6 Locking the OTP Protection Register
The user-programmable segment of the PR is lockable by programming Bit 1 of the
Protection Lock Register (PLR) to 0. Bit 0 of this location is programmed to 0 at the
Numonyx factory to protect the unique device number. Bit 1 is set using the Protection
Program command to program “0xFFFD” to the PLR. After these bits have been
programmed, no further changes can be made to the values stored in the Protection
Register. Protection Program commands to a locked section will result in a Status
Register error (SR.4 and SR.1 will be set). The PR lockout state is not reversible.
Note: A0 is not used in x16 mode when accessing the protection register map. See Ta b l e 2 9 for x16 addressing. In x8 mode
A0 is used, see Ta b le 3 0 for x8 addressing.
Figure 18: Protection Register Memory Map
Table 29: Word-Wide Protection Register Addressing
Word Use A8A7A6A5A4A3A2A1
LOCK Both 10000000
0 Factory 10000001
1 Factory 10000010
2 Factory 10000011
3 Factory 10000100
4 User 10000101
5 User 10000110
6 User 10000111
7 User 10001000
Note: All address lines not specified in the above table must be 0 when accessing the Protection Register (i.e., A[MAX:9] = 0.)
0x88
0x85
64-bit Segment
(User-Programmable)
0x84
0x81
0x80
Lock Register 0
64-bit Segment
(Factory-Programmed)
15 14 13 12 11 10 9876543210
128-Bit Protection Register 0
Word
Address A[23:1]: 128 Mbit A[21:1]: 32 Mbit
A[22:1]: 64 MbitA[24:1]: 256 Mbit
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
46 316577-06
9.7.7 VPP/ VPEN Protection
When it’s necessary to protect the entire array, global protection can be achieved using
a hardware mechanism using VPP or VPEN. Whenever a valid voltage is present on VPP
or VPEN, blocks within the main flash array can be erased or programmed. By
grounding VPP or VPEN, blocks within the main array cannot be altered – attempts to
program or erase blocks will fail resulting in the setting of the appropriate error bit in
the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks
in the array can be achieved.
Table 30: Byte-Wide Protection Register Addressing
ByteUseA8A7A6A5A4A3A2A1A0
LOCKBoth100000000
LOCKBoth100000001
0Factory100000010
1Factory100000011
2Factory100000100
3Factory100000101
4Factory100000110
5Factory100000111
6Factory100001000
7Factory100001001
8User100001010
9User100001011
AUser100001100
BUser100001101
CUser100001110
DUser100001111
EUser100010000
FUser100010001
Note: All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A[MAX:9] = 0.
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
10.0 ID Codes
Table 31: Read Identifier Codes
Code Address Data
Device Code
32-Mbit 00001h 0016h
64-Mbit 00001h 0017h
128-Mbit 00001h 0018h
256-Mbit 00001h 001Dh
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
48 316577-06
11.0 Device Command Codes
For a complete definition on device operations refer to Section 8.4, “Device Commands”
on page 34. The list of all applicable commands are included here one more time for
the convenience.
Table 32: Command Bus Operations for
Command
Setup Write Cycle Confirm Write Cycle
Address Bus Data Bus Address Bus Data Bus
Registers
Program Enhanced Configuration Register Register Data 0060h Register Data 0004h
Program OTP Register Device Address 00C0h Register Offset Register Data
Clear Status Register Device Address 0050h --- ---
Program STS Configuration Register Device Address 00B8h Device Address Register Data
Read Modes
Read Array Device Address 00FFh --- ---
Read Status Register Device Address 0070h --- ---
Read Identifier Codes (Read Device Information) Device Address 0090h --- ---
CFI Query Device Address 0098h --- ---
Program and Erase
Word/Byte Program Device Address 0040h/
0010h Device Address Array Data
Buffered Program Word Address 00E8h Device Address 00D0h
Block Erase Block Address 0020h Block Address 00D0h
Program/Erase Suspend Device Address 00B0h --- ---
Program/Erase Resume Device Address 00D0h --- ---
Security
Lock Block Block Address 0060h Block Address 0001h
Unlock Block Device Address 0060h Device Address 00D0h
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
12.0 Flow Charts
Figure 19: Write to Buffer Flowchart
Start
Setup
- Write 0xE8
- Block Address
Check Buffer Status
- Perform read operation
- Read Ready Status on signal SR7
SR7 = 1?
Word Count
- Address = block address
- Data = word count minus 1
(Valid range = 0x00 to 0x1F)
Confirm
- Write 0xD0
- Block address
End
Yes
No
Yes
SR7 = 1?
No
Load Buffer
- Fill write buffer up to word count
- Address = within buffer range
- Data = user data
Read Status
Register (SR)
Full Status Register
Check
(if desired)
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
50 316577-06
Figure 20: Status Register Flowchart
Start
SR7 = '1'
SR2 = '1'
SR4 = '1'
SR3 = '1'
SR1 = '1'
Yes
Yes
Yes
No
No
No
No
SR6 = '1' Yes
No
SR5 = '1'
No
No
Error
Command Sequence
Yes
Yes
Yes
Error
Erase Failure
Error
Program Failure
- Set by WSM
- Reset by user
- See Clear Status
Register
Command
- Set/Reset
by WSM
SR4 = '1' Yes
No
End
Command Cycle
- Issue Status Register Command
- Address = any dev ice address
- Data = 0x70
Erase Suspend
See Suspend/Resume Flowchart
Pro gram Suspend
See Suspend/Resume Flowchart
Error
V
PEN
< V
PENLK
Error
Block Locked
Data Cycle
- Read Status Register SR[7:0]
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 21: Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
SR.7 =
Full Status
Check if Desired
Byte/Word
Program Complete
Read Status
Register Data
(See Above)
Voltage Range Error
Device Protect Error
Programming Error
Byte/Word
Program
Successful
SR.3 =
SR.1 =
SR.4 =
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
Write
Standby
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR full status check can be done after each program operation, or
after a sequence of programming operations.
Write FFH after the last program operation to place device in read
array mode.
Bus
Operation
Standby
Standby
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
1
1
0
1
0
1
0
Command
Setup Byte/
Word Program
Byte/Word
Program
Comments
Data = 40H
Addr = Location to Be Programmed
Data = Data to Be Programmed
Addr = Location to Be Programmed
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command Comments
Check SR.3
1 = Programming to Voltage Error
Detect
Check SR.4
1 = Programming Error
Read
(Note 1) Status Register Data
Standby
Check SR.1
1 = Device Protect Detect
RP# = V
IH
, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
52 316577-06
Figure 22: Program Suspend/Resume Flowchart
Start
Write B0H
Read Status Register
SR.7 =
SR.2 = Programming Completed
Write D0H
Programming Resumed
Write FFH
Read Array Data
1
1
0
0
Bus
Operation Command Comments
Write Program
Suspend
Data = B0H
Addr = X
Read Status Register Data
Addr = X
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Programming Suspended
0 = Programming Completed
Read Read array locations other
than that being programmed.
Write FFH
Read Data Array
Done Reading
Yes
No
Write Read Array Data = FFH
Addr = X
Write Program
Resume
Data = D0H
Addr = X
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 23: Block Erase Flowchart
Start
Read
Status Register
SR.7 =
Erase Flash
Block(s) Complete
0
1
Full Status
Check if Desired
Suspend Erase
Issue Single Block Er ase
Command 20H, Block
Address
Suspend
Erase Loop
Write Confirm D0H
Block Address
Yes
No
Bus
Operation Command Comments
Write Erase Block Data = 20H
Addr = Block Address
Write (Note 1) Erase
Confirm
Data = D0H
Addr = Block Address
Read
Status register data
With the device enabled,
OE# low updates SR
Addr = X
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
reset the device to read array mode.
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
54 316577-06
Figure 24: Block Erase Suspend/Resume Flowchart
Start
Write B0H
Read Status Register
SR.7 =
SR.6 = Block Erase Completed
Read or Program?
Done?
Write D0H
Block Erase Resumed
Write FFH
Read Array Data
Program
Program
Loop
Read Array
Data
Read
No
Yes
1
1
0
0
Bus
Operation Command Comments
Write Erase Suspend Data = B0H
Addr = X
Read Status Register Data
Addr = X
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
Write Erase Resume Data = D0H
Addr = X
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 25: Set Block Lock-Bit Flowchart
Start
Write 60H,
Block Address
Write 01H,
Block Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
1
0
Command
Set Block Lock-Bit
Setup
Comments
Data = 60H
Addr =Block Address
Read Status Register
Data (See Above)
Voltage Range ErrorSR.3 =
1
0
Command Sequence
Error
SR.4,5 =
1
0
Set Lock-Bit ErrorSR.4 =
1
0
Set Lock-Bit
Successful
Bus
Operation
Standby
Command Comments
Check SR.3
1 = Programming Voltage Error
Detect
SR.5, SR.4 and SR.3 are only cleared by the Clear Status Register
command, in cases where multiple lock-bits are set before full status is
checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby Check SR.4
1 = Set Lock-Bit Error
Write Set Block Lock-Bit
Confirm
Data = 01H
Addr = Block Address
Standby
Repeat for subsequent lock-bit operations.
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in read
array mode.
Check SR.7
1 = WSM Ready
0 = WSM Busy
Read Status Register Data
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
56 316577-06
Figure 26: Clear Lock-Bit Flowchart
Start
Write 60H
Write D0H
Read Status Register
SR.7 =
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
Write
Standby
Write FFH after the clear lock-bits operation to place device in read
array mode.
Bus
Operation
Standby
SR.5, SR.4, and SR.3 are only cleared by the Clear Status Register
command.
If an error is detected, clear the status register before attempting retry
or other error recovery.
1
0
Command
Clear Block
Lock-Bits Setup
Clear Block or
Lock-Bits Confirm
Comments
Data = 60H
Addr = X
Data = D0H
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command Comments
Check SR.3
1 = Programming Voltage Error
Detect
Read Status Register
Data (See Above)
Voltage Range ErrorSR.3 =
1
0
Command Sequence
Error
SR.4,5 =
1
0
Clear Block Lock-Bits
Error
SR.5 =
1
0
Read Status Register Data
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby Check SR.5
1 = Clear Block Lock-Bits Error
Clear Block Lock-Bits
Successful
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 27: Protection Register Programming Flowchart
Start
Write C0H
(Protection Reg.
Program Setup)
Write Protect. Register
Address/Data
Read Status Register
SR.7 = 1?
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PEN
Range Error
Protection Register
Programming Error
Attempted Program to
Locked Register -
Aborted
Program Successful
SR.3, SR.4 =
SR.1, SR.4 =
SR.1, SR.4 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Protection Program operations can only be addressed within the protection
register address space. Addresses outside the defined space will return an
error.
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases of multiple protection register program operations before full status is
checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1, 1
0,1
1,1
Command
Protection Program
Setup
Protection Program
Comments
Data = C0H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command Comments
SR.1 SR.3 SR.4
0 1 1 V
PEN
Low
0 0 1 Prot. Reg.
Prog. Error
1 0 1 Register
Locked:
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
58 316577-06
13.0 Common Flash Interface
The (CFI) specification outlines device and host system software interrogation
handshake which allows specific vendor-specified software algorithms to be used for
entire families of devices. This allows device independent, JEDEC ID-independent, and
forward- and backward-compatible software support for the specified flash device
families. It allows flash vendors to standardize their existing interfaces for long-term
compatibility.
This section defines the data structure or “database” returned by the (CFI) Query
command. System software should parse this structure to gain critical information such
as block size, density, x8/x16, and electrical specifications. Once this information has
been obtained, the software will know which command sets to use to enable flash
writes, block erases, and otherwise control the flash component. The Query is part of
an overall specification for multiple command set and control interface descriptions
called CFI.
13.1 Query Structure Output
The Query “database” allows system software to gain information for controlling the
flash component. This section describes the device’s CFI-compliant interface that allows
the host system to access Query data.
Query data are always presented on the lowest-order data outputs (D[7:0]) only. The
numerical offset value is the address relative to the maximum bus width supported by
the device. On this family of devices, the Query table device starting address is a 10h,
which is a word address for x16 devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in
ASCII, appear on the low byte at word addresses 10h and 11h. This CFI-compliant
device outputs 00h data on upper bytes. Thus, the device outputs ASCII “Q” in the low
byte (D[7:0]) and 00h in the high byte (D[15:8]).
At Query addresses containing two or more bytes of information, the least significant
data byte is presented at the lower address, and the most significant data byte is
presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal
notation, so the “h” suffix has been dropped. In addition, since the upper byte of word-
wide devices is always “00h,” the leading “00” has been dropped from the table
notation and only the lower byte value is shown. Any x16 device outputs can be
assumed to have 00h on the upper byte in this mode.
Table 33: Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
Query start location in
maximum device bus
width addresses
Query data with maximum device
bus width addressing Query data with byte addressing
Hex
Offset Hex Code ASCII
Value
Hex
Offset Hex Code ASCII
Value
x16 device 10h 10: 0051 “Q” 20: 51 “Q”
x16 mode 11: 0052 “R” 21: 00 “Null”
12: 0059 “Y” 22: 52 “R”
x16 device 20: 51 “Q”
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
13.2 Query Structure Overview
The Query command causes the flash component to display the Common Flash
Interface (CFI) Query structure or “database.” The structure sub-sections and address
locations are summarized below. See AP-646 Common Flash Interface (CFI) and
Command Sets (order number 292204) for a full description of CFI.
The following sections describe the Query structure sub-sections in detail.
x8 mode N/A(1) N/A(1) 21: 51 “Q”
22: 52 “R”
Note:
1. The system must drive the lowest order addresses to access all the device's array data when the device is configured in
x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is "Not Applicable"
for x8-configured devices.
Table 34: Example of Query Structure Output of a x16- and x8-Capable Device
Word Addressing Byte Addressing
Offset Hex Code Value Offset Hex Code Value
A15–A0 D15–D0A7–A0 D7–D0
0010h 0051 “Q” 20h 51 “Q”
0011h 0052 “R” 21h 51 “Q”
0012h 0059 “Y” 22h 52 “R”
0013h P_IDLO PrVendor 23h 52 “R”
0014h P_IDHI ID # 24h 59 “Y”
0015h PLO PrVendor 25h 59 “Y”
0016h PHI TblAdr 26h P_IDLO PrVendor
0017h A_IDLO AltVendor 27h P_IDLO PrVendor
0018h A_IDHI ID # 28h P_IDHI ID #
... ... ... ... ... ...
Table 33: Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
Query start location in
maximum device bus
width addresses
Query data with maximum device
bus width addressing Query data with byte addressing
Hex
Offset Hex Code ASCII
Value
Hex
Offset Hex Code ASCII
Value
Table 35: Query Structure
Offset Sub-Section Name Description Notes
00h Manufacturer Code 1
01h Device Code 1
(BA+2)h(2) Block Status Register Block-Specific Information 1,2
04-0Fh Reserved Reserved for Vendor-Specific Information 1
10h CFI Query Identification String Reserved for Vendor-Specific Information 1
1Bh System Interface Information Command Set ID and Vendor Data Offset 1
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
60 316577-06
13.3 Block Status Register
The Block Status Register indicates whether an erase operation completed successfully
or whether a given block is locked or can be accessed for flash program/erase
operations.
13.4 CFI Query Identification String
The CFI Query Identification String provides verification that the component supports
the Common Flash Interface specification. It also indicates the specification version and
supported vendor-specified command set(s).
27h Device Geometry Definition Flash Device Layout 1
P(3) Primary Numonyx-Specific Extended
Query Table
Vendor-Defined Additional Information Specific to
the Primary Vendor Algorithm 1,3
Notes:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2. BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the block size is
128 Kbyte).
3. Offset 15 defines “P” which points to the Primary Numonyx-Specific Extended Query Table .
Table 35: Query Structure
Offset Sub-Section Name Description Notes
Table 36: Block Status Register
Offset Length Description Address Value
(BA+2)h(1) 1 Block Lock Status Register BA+2: --00 or --01
BSR.0 Block Lock Status
0 = Unlocked
1 = Locked
BA+2: (bit 0): 0 or 1
BSR 1–15: Reserved for Future Use BA+2: (bit 1–15): 0
Note:
1. BA = The beginning location of a Block Address (i.e., 008000h is block 1’s (64-KB block) beginning location in word
mode).
Table 37: CFI Identification
Offset Length Description Add. Hex
Code Value
10h 3 Query-unique ASCII string “QRY”
10 --51 “Q”
11: --52 “R”
12: --59 “Y”
13h 2 Primary vendor command set and control interface ID code. 13: --01
16-bit ID code for vendor-specified algorithms 14: --00
15h 2 Extended Query Table primary algorithm address 15: --31
16: --00
17h 2 Alternate vendor command set and control interface ID code. 17: --00
0000h means no second vendor-specified algorithm exists 18: --00
19h 2 Secondary algorithm Extended Query Table address. 19: --00
0000h means none exists 1A: --00
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
13.5 System Interface Information
The following device information can optimize system interface software.
13.6 Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 38: System Interface Information
Offset Length Description Add. Hex
Code Value
1Bh 1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B: --27 2.7 V
1Ch 1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C: --36 3.6 V
1Dh 1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D: --00 0.0 V
1Eh 1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E: --00 0.0 V
1Fh 1 “n” such that typical single word program time-out = 2n µs 1F: --06 64 µs
20h 1 “n” such that typical max. buffer write time-out = 2n µs 20: --07 128 µs
21h 1 “n” such that typical block erase time-out = 2n ms 21: --0A 1 s
22h 1 “n” such that typical full chip erase time-out = 2n ms 22: --00 NA
23h 1 “n” such that maximum word program time-out = 2n times typical 23: --02 256 µs
24h 1 “n” such that maximum buffer write time-out = 2n times typical 24: --03 1024 µs
25h 1 “n” such that maximum block erase time-out = 2n times typical 25: --02 4 s
26h 1 “n” such that maximum chip erase time-out = 2n times typical 26: --00 NA
Table 39: Device Geometry Definition
Offset Length Description Code See Table Below
27h 1 “n” such that device size = 2n in number of bytes 27:
28h 2 Flash device interface: x8 async x16 async x8/x16 async 28: --02 x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00 29: --00
2Ah 2 “n” such that maximum number of bytes in write buffer = 2n2A: --05 32
2B: --00
2Ch 1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2C: --01 1
2Dh 4
Erase Block Region 1 Information 2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks 2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes 2F:
30:
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
62 316577-06
13.7 Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific
Extended Query table specifies this and other similar information.
Table 40: Device Geometry: Address Codes
Address 32 Mbit 64 Mbit 128 Mbit 256 Mbit
27: --16 --17 --18 --19
28: --02 --02 --02 --02
29: --00 --00 --00 --00
2A: --05 --05 --05 --05
2B: --00 --00 --00 --00
2C: --01 --01 --01 --01
2D: --1F --3F --7F --FF
2E: --00 --00 --00 --00
2F: --00 --00 --00 --00
30: --02 --02 --02 --02
Table 41: Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Offset(1)
P = 31h Length Description
(Optional Flash Features and Commands) Add. Hex
Code Value
(P+0)h 3 Primary extended query table 31: --50 “P”
(P+1)h Unique ASCII string “PRI” 32: --52 “R”
(P+2)h 33: --49 “I”
(P+3)h 1 Major version number, ASCII 34: --31 “1”
(P+4)h 1 Minor version number, ASCII 35: --31 “1”
(P+5)h
(P+6)h
(P+7)h
(P+8)h
4Optional feature and command support (1=yes, 0=no)
Undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of optional features follows at
the end of the bit-30 field.
36: --CE
37: --00
38: --00
39: --00
bit 0 Chip erase supported bit 0 = 0 No
bit 1 Suspend erase supported bit 1 = 1 Yes
bit 2 Suspend program supported bit 2 = 1 Yes
bit 3 Legacy lock/unlock supported bit 3 = 1(1) Yes(1)
bit 4 Queued erase supported bit 4 = 0 No
bit 5 Instant Individual block locking supported bit 5 = 0 No
bit 6 Protection bits supported bit 6 = 1 Yes
bit 7 Page-mode read supported bit 7 = 1 Yes
bit 8 Synchronous read supported bit 8 = 0 No
bit9 Simultaneous Operation Supported bit 9 = 0 No
bit 30 CFI Link(s) to follow (32, 64, 128, 256 Mb) bit 30 = 0 No
bit 31 Another “Optional Feature” field to follow bit 31 = 0 No
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
(P+9)h 1
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
3A: --01
bit 0 Program supported after erase suspend bit 0 = 1 Yes
(P+A)h
(P+B)h 2
Block Status Register mask 3B: --01
bits 2–15 are Reserved; undefined bits are “0” 3C: --00
bit 0 Block Lock-Bit Status register active bit 0 = 1 Yes
bit 1 Block Lock-Down Bit Status active bit 1 = 0 No
(P+C)h 1
VCC logic supply highest performance program/erase voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
3D: --33 3.3 V
(P+D)h 1
VPP optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
3E: --00 0.0 V
Note:
1. Future devices may not support the described “Legacy Lock/Unlock” function. Thus bit 3 would have a value of “0.”
2. Setting this bit, will lead to the extension of the CFI table.
Table 42: Protection Register Information
Offset(1)
P = 31h Length Description
(Optional Flash Features and Commands) Add. Hex
Code Value
(P+E)h 1 Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection bytes are available 3F: --01 01
(P+F)h
(P+10)h
(P+11)h
(P+12)h
4
Protection Field 1: Protection Description
This field describes user-available One Time Programmable (OTP)
protection register bytes. Some are pre-programmed with device-
unique serial numbers. Others are user-programmable. Bits 0-15 point
to the protection register lock byte, the section’s first byte. The
following bytes are factory pre-programmed and user-programmable.
bits 0-7 = Lock/bytes JEDEC-plane physical low address
bits 8-15 = Lock/bytes JEDEC-plane physical high address
bits 16-23 = “n” such that 2n = factory pre-programmed bytes
bits 24-31 = “n” such that 2n = user-programmable bytes
40:
41:
42:
43:
--80
--00
--03
--03
80h
00h
8bytes
8bytes
Note:
1. The variable P is a pointer which is defined at CFI offset 15h.
Table 41: Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Offset(1)
P = 31h Length Description
(Optional Flash Features and Commands) Add. Hex
Code Value
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
64 316577-06
Table 43: Burst Read Information
Offset(1)
P = 31h Length Description
(Optional Flash Features and Commands) Add. Hex
Code Value
(P+13)h 1
Page Mode Read capability
bits 0–7 = “n” such that 2n HEX value represents the number of read-
page bytes. See offset 28h for device word width to determine page-
mode data output width. 00h indicates no read page buffer.
44: --03 8 byte
(P+14)h 1 Number of synchronous mode read configuration fields that follow. 00h
indicates no burst capability. 45: --00 0
(P+15)h 1
Synchronous Mode Read Capability Configuration 1
Bits 3-7 = Reserved
bits 0-2 = “n” such that 2n+1 HEX value represents the maximum
number of continuous synchronous burst reads when the device is
configured for its maximum word width. A value of 07h indicates that
the device is capable of continuous linear bursts until that will output
data until the internal burst counter reaches the end of the device’s
burstable address space. This field’s 3-bit value can be written directly
to the Read Configuration Register Bits 0-2 if the device is configured for
its maximum word width. See offset 1Fh for word width to determine
the burst data output width.
46: --00 n/a
(P+16h)h 1 Synchronous Mode Read Capability Configuration 2 47: --00 n/a
(P+45h)h 1 J3C mark for VIL fix for customers 76: --01 01
Note:
1. The variable P is a pointer which is defined at CFI offset 15h.
December 2007 Datasheet
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Appendix A Additional Information
Order Number Document/Tool
298130 Numonyx™ StrataFlash™ Memory (J3); 28F256J3, 28F128J3, 28F640J3, 28F320J3
Specification Update
298136 Numonyx™ Persistent Storage Manager (IPSM) User’s Guide Software Manual
297833 Numonyx™ Flash Data Integrator (FDI) User’s Guide Software Manual
290606 5 Volt Numonyx™ StrataFlash™ MemoryI28F320J5 and 28F640J5 datasheet
292204 AP-646 Common Flash Interface (CFI) and Command Sets
253418 Numonyx™ Wireless Communications and Computing Package User’s Guide
Note: Contact your local Numonyx or distribution sales office or visit the Numonyx home page http://www.numonyx.com for
technical documentation, tools, or the most current information on Numonyx™ Embedded Flash Memory (J3 v D) .
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Datasheet December 2007
66 316577-06
Appendix B Ordering Information
Figure 28: Decoder for Discrete Family, 32-, 64-, 128-, 256-Mbit (monolithic)
l
Product line designator
for Intel
®
Flash products
Product Family
J = Intel
®
Embedded Flash memory,
2 bits-per-cell
Voltage (V
CC
/V
CCQ
)
3 = 3 V/3 V
Access Speed (ns)
256 Mbit = 95
32/64/128 Mbit = 75
Lithography
Intel
®
0.13 micron ETOX™
VIII Process Technology
Device Density
256 = x8/x16 (256 Mbit)
128 = x8/x16 (128 Mbit)
640 = x8/x16 (64 Mbit)
320 = x8/x16 (32 Mbit)
Package
TE = 56-Lead TSOP
RC = 64-Ball Easy BGA
R C 2 8 F 2 5 6 J 3 D 0 9 5
Table 44: Valid Combinations
32-Mbit 64-Mbit 128-Mbit 256-Mbit
TE 28F320J3D-75 TE 28F640J3D-75 TE 28F128J3D-75 TE 28F256J3D-95
JS28F320J3D-75 JS28F640J3D-75 JS28F128J3D-75 JS28F256J3D-95
RC 28F320J3D-75 RC 28F640J3D-75 RC 28F128J3D-75 RC 28F256J3D-95
PC 28F320J3D-75 PC 28F640J3D-75 PC 28F128J3D-75 PC 28F256J3D-95
