TSD1857
Low Vcesat NPN Transistor
1/5
Version: B11
TO
-
126
TO
-
92
PRODUCT SUMMARY
BV
CBO
180V
BV
180V
I
C
1.5A
V
CE(SAT)
0.6V @ I
C
/ I
B
= 1A / 100mA
Features
● Low V
CE(SAT)
0.6 @ I
C
/ I
B
= 1A / 100mA (Typ.)
● High BV
Ordering Information
Part No. Package
Packing
TSD1857CT B0 TO-92 1K / Bulk
TSD1857CT A3 TO-92 2K / Ammo
TSD1857CK B0 TO-126 500pcs / Bulk
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
180 V
Collector-Emitter Voltage V
180 V
Emitter-Base Voltage V
EBO
5 V
Collector Current DC I
C
1.5 A
Pulse 3 (note1)
Collector Power Dissipation TO-92 P
D
0.75 W
TO-126 1
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
STG
- 55 to +150
o
C
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions
Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage I
C
= 50uA, I
E
= 0 BV
CBO
180 -- -- V
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0 BV
CEO
180 -- -- V
Emitter-Base Breakdown Voltage I
E
= 50uA, I
C
= 0 BV
EBO
5 -- -- V
Collector Cutoff Current V
CB
= 160V, I
E
= 0 I
-- -- 1 uA
Emitter Cutoff Current V
EB
= 4V, I
C
= 0 I
EBO
-- -- 1 uA
Collector-Emitter Saturation Voltage I
C
/ I
B
= 1A / 100mA V
CE(SAT)
-- -- 0.6 V
Base-Emitter Saturation Voltage V
CE
= 5V, I
C
= 5mA V
B
E(
ON
)
0.45 -- 0.8 V
DC Current Transfer Ratio V
CE
= 5V, I
C
= 200mA h
FE
1 160 -- 320
V
CE
= 5V, I
C
= 500mA h
FE
2
30 -- --
Transition Frequency V
CE
=5V, I
E
=150A,
f=100MHz f
T
-- 140 -- MHz
Output Capacitance V
CB
= 10V, f=1MHz Cob -- 27 -- pF
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
Pin
Definition
:
1. Emitter
2. Collector
3. Base
TSD1857
Low Vcesat NPN Transistor
2/5
Version: B11
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
vs. Collector Current
Figure 3. V
BE(SAT)
vs. Collector Current
Figure 4. Power Derating Curve (TO-92)
Figure 5. On Voltage vs. Collector Current
Figure 6. Power Derating Curve (TO-126)
TSD1857
Low Vcesat NPN Transistor
3/5
Version: B11
TO-126 Mechanical Drawing
TO-126 DIMENSION
DIM
INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.118 0.134 3.00 3.40
A1
0.071 0.087 1.80 2.20
b 0.026 0.034 0.66 0.86
B1
0.046 0.054 1.17 1.37
c 0.018 0.024 0.45 0.60
D 0.307 0.323 7.80 8.20
E 0.425 0.441 10.80 11.2
e 0.090 BSC 2.28 BSC
e1
0.176 0.183 4.46 4.66
L 0.594 0.610 15.10 15.50
L1
0.051 0.059 1.30 1.50
P 0.159 0.167 4.04 4.24
Ø
1
0.118 0.126 3.00 3.20
Ø
2
0.122 0.130 3.10 3.30
TSD1857
Low Vcesat NPN Transistor
4/5
Version: B11
TO-92 Mechanical Drawing
TO-92 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 13.53 (typ) 0.532 (typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.050
F 3.30 3.70 0.130 0.146
G 1.27 1.31 0.050 0.051
H 0.33 0.43 0.013 0.017
TSD1857
Low Vcesat NPN Transistor
5/5
Version: B11
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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