GP1S97J0000F
1
Sheet No.: D3-A01101EN
Date Jun. 30. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP1S97J0000F
Gap : 2.2mm, Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
■Description
GP1S97J0000F is a compact-package, phototransistor
output, transmissive photointerrupter, with opposing
emitter and detector in a molding that provides non-
contact sensing. The compact package series is a result
of unique technology combing transfer and injection
molding.
This device has hole that passes through the base of
the device, for assembly or fi xing, and it has a wide gap.
■Features
1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Wide Gap
3. Key Parameters :
• Gap Width : 2.2mm
• Slit Width (detector side): 0.3mm
• Package : 5×3.4×5.2mm
4. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. Detection of object presence or motion.
2. Example : printer, lens control for camera
2
Sheet No.: D3-A01101EN
GP1S97J0000F
■Internal Connection Diagram
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.11g
Plating material : SnCu (Cu : TYP. 2%)
aaʻ
5
3.4
2.21.4
Top view
(1)
(C0.3)
(C0.4) (0.3) Slit width
2.8
∗3.65 ∗2.54
0.15+0.2
−0.1
φ1.5+0.1
−0
0.4
hole
3.6±0.5 5.2
3.9
a-aʻ section
Light path
center
43
12
Date
code
SHARP
mark
"S"
• Unspecifi ed tolerance : ±0.2mm
• ( ) : Reference dimensions
• The dimensions indicated by ∗ refer to
those measured from the lead base.
• The dimensions shown do not include
those of burrs.
Burr's dimentions : 0.15mm MAX.
Top view
1
2 1
3 4
2
3
4
Anode
Collector
Emitter
Cathode
3
Sheet No.: D3-A01101EN
GP1S97J0000F
repeats in a 10 year cycle
Rank mark
There is no rank indicator.
Country of origin
Japan
Date code (2 digit)
1st digit 2nd digit
Year of production Month of production
A.D. Mark Month Mark
2000 0 1 1
2001 1 2 2
2002 2 3 3
2003 3 4 4
2004 4 5 5
2005 5 6 6
2006 6 7 7
2007 7 8 8
2008 8 9 9
2009 9 10 X
2010 0 11 Y
: : 12 Z
4
Sheet No.: D3-A01101EN
GP1S97J0000F
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
Forward current IF50 mA
Reverse voltage VR6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current IC20 mA
Collector power dissipation PC75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗1Soldering temperature Tsol 260 ˚C
∗1 For 5s or less
(Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input Forward voltage VFIF=20mA −1.2 1.4 V
Reverse current IRVR=3V −−
10 μA
Output Collector dark current ICEO VCE=20V −−
100 nA
Transfer
charac-
teristics
Collector current ICVCE=5V, IF=5mA 80 −400 μA
Collector-emitter saturation voltage
VCE(sat) IF=10mA, IC=40μA−−
0.4 V
Response time Rise time trVCE=5V, IC=100μA, RL=1kΩ−50 150 μs
Fall time tf−50 150 μs
1mmMIN.
Soldering area
5
Sheet No.: D3-A01101EN
GP1S97J0000F
Fig.5 Collector Current vs.
Collector-emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Current vs.
Forward Current
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Power Dissipation vs.
Ambient Temperature
0
10
20
30
40
50
60
25 10075 8550250
Forward current IF(mA)
Ambient temperature Ta(oC)
Powerdissipation P,P
c,Ptot (mW)
20
15
40
60
80
75
100
120
−25 10075 8550250
Ambient temperature Ta(°C)
0
Ptot
P, Pc
Forward current IF(mA)
1
100
10
0 0.5 1 1.5 2 2.5 3
Forward voltage VF(V)
Ta75oC
50oC25oC
25oC
0oC
Collector current IC(mA)
Forward current IF(mA)
0
2
2.2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0 2 4 6 8 101214161820
VCE=5V
Ta=25°C
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
012345678910
4.4
Ta=25°C
IF=40mA
IF=30mA
IF=5mA
IF=50mA
IF=20mA
IF=10mA
Relative collector current (%)
Ambient temperature Ta (oC)
IF5mA
VCE5V
IC
at Ta25oC
0
120
110
100
90
80
70
60
50
40
30
20
10
25 0 25 50 75
6
Sheet No.: D3-A01101EN
GP1S97J0000F
Fig.7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Fig.8 Collector Dark Current vs.
Ambient Temperature
Fig.9
Response Time vs. Load Resistance
Fig.10
Test Circuit for Response Time
Fig.11
Detecting Position Characteristics (1)
Fig.12
Detecting Position Characteristics (2)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Collector-emitter saturation voltage VCE(sat)(V)
AmbienttemperatureTa(°C)
IF=10mA
IC=40μA
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
−25 7550250
0.04
Responsetimetr,t
f,t
d,t
s(μs)
Load resistance RL(kΩ)
VCE=5V
IC=100μA
Ta=25°C
1
1 000
100
10
10.1 10 100 1 000
ts
td
tf
tr
10%
Input
Output
Input Output
90%
ts
td
VCC
RDRL
tf
tr
Ambient temperature Ta(oC)
1010
106
107
108
109
0 100755025
Collector dark current ICEO (A)
VCE20V
Relative collector current (%)
20
40
60
80
100
90
50
10
−13210
30
70
IF=5mA
VCE=5V
Ta=25°C
0Sensor
−+
Shield
distance L
Shield
0
Shield moving distance L (mm)
30
70
0
Relative collector current (%)
20
40
60
80
100
90
50
10
−13210
Shield
0
Sensor
IF=5mA
VCE=5V
Ta=25°C
Shield distance L
−
+
Shield moving distance L (mm)
7
Sheet No.: D3-A01101EN
GP1S97J0000F
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 2mm or more from the top of elements.
(Example)
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransistor Silicon (Si) 930 700 to 1 200 20
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame Lead frame plating
Black polyphernylene
sulfi de resin (UL94 V-0) 42Alloy SnCu plating
2mm or more 2mm or more
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Sheet No.: D3-A01101EN
GP1S97J0000F
■Manufacturing Guidelines
●Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Please solder within one time.
Soldering area is 1mm or more away from the bottom of housing.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350C.
Please solder within one time.
Please don't touch the terminals directly by soldering iron.
Soldered product shall treat at normal temperature.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
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Sheet No.: D3-A01101EN
GP1S97J0000F
■Package specifi cation
●Sleeve package
Package materials
Sleeve : Polystyrene
Stopper : Styrene-Elastomer
Package method
MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 50 sleeves in one case.
10
Sheet No.: D3-A01101EN
GP1S97J0000F
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H136]
