1MBI 300S-120 1-Pack IGBT
1200V
1x300A
IGBT MODULE ( S-Series )
â–
â– â–
â– Features
• NPT-Technology
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
â–
â– â–
â– Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
â–
â– â–
â– Outline Drawing
â–
â– â–
â– Maximum Ratings and Characteristics â–
â– â–
â– Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200
Gate -Emitter Voltage VGES ± 20 V
Continuous 25°C / 80°C IC400 / 300
Collector 1ms 25°C / 80°C IC PULSE 800 / 600
Current Continuous -IC300
1ms -IC PULSE 600
A
Max. Power Dissipation PC2100 W
Operating Temperature Tj+150
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage
*1A.C. 1min. Vis 2500 V
Mounting *23.5
Terminals *24.5
Screw Torque
Terminals *21.7
Nm
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value: Mounting 2.5 ∼ 3.5 Nm (M5) or (M6) ; Terminal 3.5 ∼ 4.5 Nm (M6), 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at Tj=25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 4.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 800 nA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=300mA 5.5 7.2 8.5
Tj = 25°C 2.3 2.6 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=300A Tj =125°C 2.8
Input Capacitance Cies VGE=0V 36’000
Output Capacitance Coes VCE=10V 7’500 pF
Reverse Transfer Capacitance Cres f=1MHz 6’600
tON VCC = 600V 0.35 1.2
Turn-on Time tr,x IC= 300A 0.25 0.6
tr,i VGE =±15V 0.10
tOFF RG=2.7Ω0.45 1.0
Turn-off Time tfInductive Load 0.08 0.3
µs
Tj = 25°C 2.3 3.0
Diode Forward On-Voltage VFIF=300A; VGE=0V Tj =125°C 2.0 V
Reverse Recovery Time trr IF=300A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.06
Thermal Resistance Rth(j-c) Diode 0.17 °C/W
Rth(c-f) With Thermal Compound 0.0125
1MBI 300S-120 1-Pack IGBT
1200V
1x300A
1MBI 300S-120 1-Pack IGBT
1200V
1x300A
1MBI 300S-120 1-Pack IGBT
1200V
1x300A
Specification is subject to change without notice September 2000
