MJE340 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . useful for high–voltage general purpose applications.

•Suitable for Transformerless, Line–Operated Equipment

•Thermopad Construction Provides High Power Dissipation Rating for High

Reliability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

300

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

3.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

500

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.16

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

6.25

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 300 Vdc, IE = 0)

ÎÎÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎÎÎ

240

ÎÎÎÎ

—



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE340/D

 Motorola, Inc. 1995



0.5 AMPERE

POWER TRANSISTOR

NPN SILICON

300 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

MJE340

2 Motorola Bipolar Power Transistor Device Data

TC, CASE TEMPERATURE (

020 40 80 120 160

PD, POWER DISSIPATION (WATTS)

MJE340

8.0

4.0

1.0

10 IC, COLLECTOR CURRENT (mA)

020 30 50 100 200 500

0.4

0.8

0.6

V, VOLTAGE (VOLTS)

0.2

300

TJ = 25

CVBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

Figure 1. Power Temperature Derating Figure 2. “On” Voltages

60 100 140

IC/IB = 5.0

Figure 3. MJE340

1.0

10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

0.01 50 100

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT TC = 25

SINGLE PULSE

IC, COLLECTOR CURRENT (AMP)

0.3

0.05

20 30

1.0 ms

200 300

0.2

0.1

0.03

0.02

TJ = 150

C 500

ACTIVE–REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transis-

tor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150

C; TC is variable depending on conditions. Second breakdown pulse limits are

valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by second breakdown.

IC, COLLECTOR CURRENT (mAdc)

hFE, DC CURRENT GAIN

TJ = 150

+25

VCE = 10 V

VCE = 2.0 V

–55

Figure 4. DC Current Gain

300

200

100

1.0 2.0 3.0 5.0 10 20 30 500

7.0 50 70 100 200 300

+100

MJE340

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

MJE340

4 Motorola Bipolar Power Transistor Device Data

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MJE340/D

*MJE340/D*

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