OPTOELECTRONICS T1 SOLID STATE LAMPS YELLOW MV5374C STANDARD RED MV5074C HIGH EFFICIENCY GREEN MV5474C STANDARD RED MV5075C HIGH EFFICIENCY RED MV5774C 620" {508 mmb 210" (5.33 mm} 180" (3.81 mm) 190" 14,38 mani ' thts O11" 1.280 mm} b mm! sq. O14" (.432 mm} [+ t ANODE 1050" (1.27-1m) AFF. bb CATHODE REF ra FLAT 160" (4.06 mm) 51 gq (2607 11.82 mm 050" (1.27 mm) 1,00" {25.4 mm} MIN C1128B These solid state indicators offer a variety of color selection. The High Efficiency Red, Green and Yellow devices are made with a gallium arsenide phosphide on gallium phosphide. All are encapsulated in epoxy packages. Their small size (approximately T-1 size), good viewing angle, and small square leads contribute to their versatility as all purpose indicators. = Square leads (will fit into .020-inch (.508mm) diameter hole) = Compact size m Long life, rugged @ 1-inch (25.4 mm) minimum lead length = Mount on approximately 3/16-inch (4.72 mm) centers CHARACTERIST SOURCE LENS LENS PACKAGE TYPE COLOR COLOR EFFECT STYLE MV5074C Standard Red Red Clear Narrow Beam High Profile MvV5075C Standard Red Red Diffused Wide Beam High Profile MV5374C Yellow Yellow Diffused Wide Beam High Profile MV5474C High Efficiency Green Green Diffused Wide Beam High Profile MV5774C High Efficiency Red Red Diffused Wide Beam High Profile tT DPTOELECTAONICS SOLID STATE LAMPS LECTRO-OPTICAL CHARACTERISTICS (, =26C Unless Oth PARAMETER SYMBOL TEST. COND. UNITS MV5074C }3=MY5075C MV5374C MV5474C MV5774C Forward voltage typ. Ve l-=20 mA V 1.6 1.6 2.1 2.2 2.0 max. |, =20 mA V 2.0 2.0 3.0 3.0 3.0 Luminous Intensity min. \ -=20 mA med 0.7 0.6 1.5 1.2 15 typ. 7=20 mA med 2.5 1.5 9.0 9.0 9.0 Peak wavelength Ap |-=20 MA nm 660 660 585 565 635 Spectral line |=20 mA nm 20 20 35 35 45 half width Capacitance typ. Cc Vv=0 pF 23 23 45 20 45 Reverse voltage min. Van la=100 pA Vv 5 5 5 5 5 typ. Ip=100 A v 15 15 25 25 25 Reverse current max. Va=5.0 V pA 100 100 100 100 100 Viewing angle (total) 20 See Fig.3 degrees 70 90 90 90 90 Power diSSiPation oo... ke EERE Een eee ee en ene e tne e tees 105 mw Derate linearly from 25C 00. ccc een nent erent ened Pere teen ene e tte neee ene -1.14 mW? C Storage and operating temperature .... 2... nent erent eter een ee te ennenas -55C to +100C Lead soldering time at 260 C (Se@ NOTE 1) oo ee ERE REED ene eee nee nn net n nee ees 5 sec. Continuous forward current (MV5374C=20 MA) . 06. een een n ene e nee n renee n tenn eeetennes 35 mA Peak forward current (usec pulse 0.9% duty cycle) (MV5474C=90 mA) (MV5374C=60 mA) Reverse VONAGE oN EEE E ERED E CCE Ee EEC en EE Een nen ener ae 5.0V& 1 DPIOELECTROWICS SOLID STATE LAMPS 100 40 < go}INDICATE E ~") PULSED 80 > 30 = = 70 a i 2 = 60 w = 3 50 20 Qa an x > Si g 2 Z 19 x 20 2 i #10 Q 0 1 2 3 4 Q 20 40 60 a0 INSTANTANEOUS FORWARD FOWARD VOLTAGE Vr (VOLTS) CURRENT is(ma} C1833 CE52A Fig. 1. Forward Current vs. Fig. 2. Luminous Intensity vs. Forward Voltage Forward Current O 10 20 120% | ] | T STD. ee) aoe HL err. YELLOW RED RED 100% LHI. EFF._YE 100% ie ) GREEN z | go% MV5074C a g . x 5 80% 1 ai aor < a z fs " 5 \ | Zz s > 60% w ao oO 2 70% 50 Wi Ww & ra > | : \ = _8 = 40% y a o z LALA 70 20% 7 : XV 90 0 A N a {tT} 520 540 560 580 600 620 640 660 680 690 50% 30% = 10% 0 1129 WAVELENGTH (A)-nm_ _C1064A Fig. 3. Spatial Distribution Fig. 4. Spectral Distribution 1. The leads of the device were immersed in molten solder, at 260C, toa point 1/16 inch (1.6 mm) from the body of the device per MIL-S-750, with a dwell time of 5 seconds.