DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. SPECIFICATION Device Name : Power MOSFET Type Name : FMW16N60G Spec. No. : MS5F6146 Date : Jun.-01-2005 APPROVED DRAWN Jun.-01-'05 MS5F6146 a 1 / 19 H04-004-05 Date Jun.-01 2005 Aug.-03 2005 Classification Added Index a DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Revised Records Content Drawn Checked Checked Approved enactment Added newpackage types MS5F6146 a 2 / 19 H04-004-03 1.Scope This specifies Fuji Power MOSFET FMW16N60G 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Type name and Ordering code Type Name FMW16N60G Ordering code FMW16N60G SC Country code Packaging Assembly location (Blank) Japan K1 'Factory A' at Korea FMW16N60G SC-K1 5.Outvie w and Standard packing Specification Package Ordering code Type FMW16N60G SC TO-247 FMW16N60G SC-K1 page 8/19 Standard packing Specification MS5Q0006 page 9/19 MS5Q0064 Out view Description Drain-Source Voltage Symbol Characteristics Unit VDS 600 V VDSX 600 V Continuous Drain Current ID 16 A Pulsed Drain Current IDP 64 A Gate-Source Voltage VGS 30 V Repetitive and Non-Repetitive IAR 16 Remarks VGS=-30V A Tch<=150 mJ L=1.74mH Vcc=60V *1 Maximum Avalanche Current 242.7 Non-Repetitive Maximum Avalanche Energy EAS Maximum Drain-Source dV/dt dVDS/dt 20 kV/s VDS<=600V Peak Diode Recovery dV/dt dV/dt 5 kV/s *2 Maximum Power Dissipation PD 2.50 W 235 Ta=25 Tc=25 Operating and Storage Tch 150 C Temperature range Tstg -55 to +150 C *1 See to Avalanche Energy Graph (Page 18/19) *2 IF -ID ,-di/dt=50A/s,VccBVDSS,Tch150 C DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. 6.Absolute Maximum Ratings at Tc=25 (unless othe rwise specifie d) MS5F6146 a 3 / 19 H04-004-03 .Electrical Characteristics at Tc=25 (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. ID=250A Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) Unit VGS=0V 600 - - V ID=250A VDS=VGS 3.0 - 5.0 V - - 25 - - 250 VGS= 30V VDS=0V - 10 100 nA ID=8A VGS=10V - 0.42 0.57 VDS=600V T ch=25 VGS=0V VDS=480V T ch=125 VGS=0V A ID=8A Forward Transconductance gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Time tr Turn-Off Time td(off) tf QG Total Gate Charge Gate-Source Charge Gate-Drain Charge Reverse Diode Description Avalanche Capability VDS=25V VDS=25V 6.5 13 - S VGS=0V f=1MHz - 1590 200 11 2390 300 17 pF Vcc=300V - 29 43.5 VGS=10V ID=8A - 16 24 - 58 8 87 12 34 12 51 18 RG =10 Vcc=300V ns QGS ID=19A - QGD VGS=10V - 10 15 min. typ. max. Unit 16 - - A - 1.00 1.50 V - 0.68 - s - 7.8 - C min. typ. max. 0.532 50.0 Unit /W /W Symbol IAV Diode Forward On-Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr .Thermal Resistance Description Channel to Case Rth(ch-c) Channel to Ambient Rth(ch-a) Conditions L=1.74mH Tch=25 See Fig.1 and Fig.2 IF=16A VGS=0V IF=16A T ch=25 VGS=0V -di/dt=100A/s T ch=25 Symbol DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. max. MS5F6146 nC a 4 / 19 H04-004-03 50 DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Fig.1 Test circuit L D.U.T L=1.74mH Vcc=60V Single Pulse Test MS5F6146 Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID a 5 / 19 H04-004-03 9.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times) Test Test No. Items Testing methods and Conditions Reference Standard Sampling number Pull force TO-220,TO-220F : 10N EIAJ TO-3P,TO-3PF,TO-247 : 25N ED4701/400 TO-3PL : 45N method 401 T-Pack,K-Pack : 10N Force maintaining duration :305sec 2 Terminal Load force Strength TO-220,TO-220F : 5N EIAJ (Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 TO-3PL : 15N method 401 T-Pack,K-Pack : 5N Number of times :2times(90deg./time) 3 Mounting Screwing torque value: (M3) EIAJ Strength TO-220,TO-220F : 4010Ncm ED4701/400 TO-3P,TO-3PF,TO-247 : 5010Ncm method 402 TO-3PL : 7010Ncm 4 Vibration frequency : 100Hz to 2kHz EIAJ Acceleration : 200m/s2 ED4701/400 Sweeping time : 4min. method 403 48min. for each X,Y&Z directions. 5 Shock Peak amplitude: 15km/s2 EIAJ Duration time : 0.5ms ED4701/400 3times for each X,Y&Z directions. method 404 6 Solderability Solder temp. : 2455C Immersion time : 50.5sec Each terminal shall be immersed in ----the solder bath within 1 to 1.5mm from the body. 7 Resistance to Solder temp. : 2605C EIAJ Soldering Heat Immersion time : 101sec ED4701/300 Number of times : 1times method 302 DWG.NO. Mechanical test methods Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. 1 Terminal Strength (Tensile) MS5F6146 Acceptance number 15 15 (0:1) 15 15 15 15 15 a 6 / 19 H04-004-03 Test Items Testing methods and Conditions Reference Standard 1 High Temp. Storage Temperature : 150+0/-5C Test duration : 1000hr 2 Low Temp. Storage Temperature : -55+5/-0C Test duration : 1000hr EIAJ ED4701/200 method 201 EIAJ ED4701/200 method 202 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 3 Temperature Humidity Storage 4 Temperature Humidity BIAS 5 6 Endurance test methods 7 8 9 Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS(max) * 0.8 Test duration : 1000hr Unsaturated Temperature : 1302C Pressurized Relative humidity : 855% Vapor Vapor pressure : 230kPa Test duration : 48hr Temperature High temp.side : 1505C/30min. Cycle Low temp.side : -555C/30min. RT : 5C 35C/5min. Number of cycles : 100cycles Thermal Shock Fluid : pure water(running water) High temp.side : 100+0/-5C Low temp.side : 0+5/-0C Duration time : HT 5min,LT 5min Number of cycles : 100cycles Intermittent Tc=90degr ee Operating TchTch(max.) Life Test duration : 3000 cycle HTRB Temperature : Tch=150+0/-5C (Gate-source) Bias Voltage : +VGS(max) 10 HTRB (Drain-Source) Test duration : 1000hr Temperature : Tch=150+0/-5C Bias Voltage : 500V Test duration : 1000hr Sampling number Acceptance number 22 22 22 22 (0:1) EIAJ ED4701/100 method 103 22 EIAJ ED4701/100 method 105 22 EIAJ ED4701/300 method 307 EIAJ ED4701/100 method 106 EIAJ ED4701/100 method 101 EIAJ ED4701/100 method 101 22 22 22 (0:1) 22 Sym bols Failure Criteria Item Lower Lim it Upper Limit Breakdown Voltage BVD SS LSL ----Zero gate Voltage Drain-Source Current IDSS ----USL Gate-Source Leakage C urrent IGSS ----USL Gate Threshold Voltage VG S(th) LSL USL Drain-Source on-state Resistance RD S(on) ----USL Forward Transconductance gfs LSL ----Diode forward on-Voltage VSD ----USL Marking Soldering ----W ith eyes or Microscope and other dam ages * LSL : Lower Specification Lim it * U SL : Upper Specification Lim it * Before any of electrical characteristics m easure, all testing related to the hum idity have conducted after drying the package surface for m ore than an hour at 150C. DWG.NO. Electrical Characteristics Failure Criteria Outview Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Climatic test methods Test No. MS5F6146 Unit V A A V S V ----- a 7 / 19 H04-004-03 DWG.NO. Note : 1. Marking Infomation Type Name : 16N60G Lot No. : YMNNN Y : Year Code M : Month Code NNN : Lot Serial Number MS5F6146 a 8 / 19 H04-004-03 Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. DWG.NO. Note : 2. Marking Infomation Type Name : 16N60G Lot No. : YMNNN Y : Year Code M : Month Code NNN : Lot Serial Number MS5F6146 a 9 / 19 H04-004-03 Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. 10. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 11. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Whenhandl i ngMOSFETs , hol dt hem byt hec as e( pac k age)anddon' t t ouc ht hel eadsandt er mi nal s . It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats. DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. MS5F6146 a 10 / 19 H04-004-03 Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated environment since they are not radiation-proof. Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 2605 C 35010 C Duration 101 seconds 3.50.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Recommended soldering condition Categories Through-Hole Possible Packages Wave Soldering Wave Soldering (Full dipping) (Only terminal) TO-3PL x TO-3P x TO-247 x TO-3PF x TO-220 x TO-220F x T-Pack(L) x TO-3PL-7 x Limited to 1 time xUnable DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Installation Methods Infrared Reflow Air Reflow x x x x x x x x x x x x x x x x MS5F6146 Soldering iron (Re-work) a 11 / 19 H04-004-03 Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Screw Tightening torques M3 30 -50 Ncm M3 40 -60 Ncm M3 60 -80 Ncm Note flatness : < =30m roughness : <=10m Plane off the edges : C<=1.0mm Theheat s i nks houl dha v eaf l at nes swi t hi n30mandr oughnes swi t hi n10m. Al s o, ke ept het i ght eni ng torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage The MOSFETs must be stored at a standard temperature of 5 to 35 and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 12.Appendix This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by ` Cl eanAi r Ac tof US' law. If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL MS5F6146 a 12 / 19 H04-004-03 0 0 25 4 50 8 DWG.NO. ID [A] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. PD [W] Allowable Power Dissipation PD=f(Tc) 400 300 200 100 0 75 100 30 12 VDS [V] 16 125 20 150 Tc [ C] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 50 40 20V 10V 8V 7V 20 6.5V 10 VGS=6.0V 0 24 MS5F6146 a 13 / 19 H04-004-03 0 0.1 1 2 3 4 DWG.NO. gfs [S] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. ID[A] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 5 VGS[V] 1 6 7 10 8 9 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 100 ID [A] MS5F6146 a 14 / 19 H04-004-03 RDS(on) [ ] VGS=6V 0 0.7 0.4 -50 -25 0 25 DWG.NO. RDS(on) [ ] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. 1.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 6.5V 0.9 0.8 7V 0.7 8V 10V 0.6 20V 0.5 0.4 0.3 0.2 0.1 0.0 10 20 50 Tch [ C] 75 30 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.6 max. 0.5 typ. 0.3 0.2 0.1 0.0 100 125 150 MS5F6146 a 15 / 19 H04-004-03 VGS(th) [V] 5.0 3.0 -50 0 -25 10 0 25 10 20 DWG.NO. VGS [V] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 max. 4.5 4.0 3.5 min. 2.5 2.0 1.5 1.0 0.5 0.0 50 75 Tch [ C] 30 100 40 125 50 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 C 14 12 Vcc= 120V 300V 480V 8 6 4 2 0 60 Qg [nC] MS5F6146 a 16 / 19 H04-004-03 C [pF] Ciss 10 4 10 3 10 2 10 10 10 0 10 DWG.NO. IF [A] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Coss 1 Crss 0 1 10 2 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 100 10 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VSD [V] MS5F6146 a 17 / 19 H04-004-03 10 -1 600 400 0 10 25 50 DWG.NO. EAV [mJ] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. t [ns] 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 10 10 2 td(off) td(on) 10 1 tr tf 10 0 0 10 1 75 100 10 2 ID [A] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A 700 IAS =7A 500 IAS=10A 300 IAS=16A 200 100 0 125 150 starting Tch [ C] MS5F6146 a 18 / 19 H04-004-03 Avalanche Current I AV [A] 2 10-8 10 -1 10 -2 10 -3 10 -6 10-7 10 -5 10 -6 10 -4 10 DWG.NO. Zth(ch-c) [/W] Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any t hi r d par t y nor us e d for t he manu fact ur i ng pur po s es wi t hout the express wri tten consent of Fuji El ect ric Co.,Lt d. 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=50V Single Pulse 10 1 10 0 10 -1 10 -2 10-5 10-4 -3 10 -2 10-3 10 -1 MS5F6146 10-2 tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 101 100 10 0 t [sec] a 19 / 19 H04-004-03