Vishay Siliconix
Si9934BDY
Document Number: 72525
S09-0704-Rev. D, 27-Apr-09
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1
Dual P-Channel 2.5-V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
- 12 0.035 at VGS = - 4.5 V - 6.4
0.056 at VGS = - 2.5 V - 5.1
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si9934BDY-T1-E3 (Lead (Pb)-free)
Si9934BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFE
T
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 12 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
- 6.4 - 4.8
A
TA = 70 °C - 5.1 - 3.9
Pulsed Drain Current IDM - 20
Continuous Source Current (Diode Conduction)aIS- 1.7 - 0.9
Maximum Power DissipationaTA = 25 °C PD
2.0 1.1 W
TA = 70 °C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 10 s RthJA
55 62.5
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40
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Document Number: 72525
S09-0704-Rev. D, 27-Apr-09
Vishay Siliconix
Si9934BDY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.4 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 12 V, VGS = 0 V - 1 µA
VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 5
On-State Drain CurrentaID(on) V
DS = - 5 V, VGS = - 4.5 V - 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 6.4 A 0.028 0.035 Ω
VGS = - 2.5 V, ID = - 1.8 A 0.044 0.056
Forward Transconductanceagfs VDS = - 10 V, ID = - 6.4 A 17 S
Diode Forward VoltageaVSD IS = - 1.7 A, VGS = 0 V - 0.8 - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 6 V, VGS = - 4.5 V, ID = - 6.4 A
13 20
nCGate-Source Charge Qgs 2.6
Gate-Drain Charge Qgd 4.0
Gate Resistance Rg9Ω
Tur n - O n D e l ay Time td(on)
VDD = 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
19 30
ns
Rise Time tr35 55
Turn-Off Delay Time td(off) 80 120
Fall Time tf50 75
Source-Drain Reverse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs 40 80
Output Characteristics
0
4
8
12
16
20
012345
V
GS
= 5 thru 3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
1.5 V
2.5 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72525
S09-0704-Rev. D, 27-Apr-09
www.vishay.com
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Vishay Siliconix
Si9934BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)RDS(on)
0.00
0.02
0.04
0.06
0.08
0.10
048121620
ID - Drain Current (A)
VGS = 2.5 V
VGS = 4.5 V
0
1
2
3
4
5
0 3 6 9 12 15
VDS = 6 V
ID = 6.4 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 150 °C
20
10
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
TJ = 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
400
800
1200
1600
2000
024681012
VDS - Drain-to-Source Voltage (V)
Coss
Ciss
C - Capacitance (pF)
Crss
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 6.4 A
TJ - Junction Temperature (°C)
- On-Resistance
(Normalized)
R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
012345
ID = 6.4 A
- On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
ID = 1.8 A
RDS(on)
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Document Number: 72525
S09-0704-Rev. D, 27-Apr-09
Vishay Siliconix
Si9934BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 150 µA
Variance (V)V
GS(th)
TJ - Temperature (°C)
Single Pulse Power
30
0
20
10
15
Power (W)
Time (s)
25
1 100 6001010-1
10-2
10-3
5
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
TA = 25 °C
Single Pulse
- Drain Current (A)I
D
P(t) = 10
dc
0.1
ID(on)
Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
IDM Limited
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on)*
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-310-21 10 60010-1
10-4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 72525
S09-0704-Rev. D, 27-Apr-09
www.vishay.com
5
Vishay Siliconix
Si9934BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72525.
Normalized Thermal Transient Impedance, Junction-to-Foot
10-310-211010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
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Revision: 08-Feb-17 1Document Number: 91000
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