NESG2046M33
NEC's NPN SiGe TRANSISTOR
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratories
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
PRELIMINARY DATA SHEET
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 13 V
Collector to Emitter Voltage VCEO 5 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC40 mA
Total Power Dissipation Ptot Note 130 mW
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER QUANTITY SUPPLYING FORM
NESG2046M33-A 50 pcs (Non reel) • 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
NESG2046M33-T3-A 10 kpcs/reel
NESG2046M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK FB
Marking T7
hFE Value 140 to 220
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 100 nA
DC Current Gain hFE Note 1 VCE = 1 V, IC = 2 mA 140 180 220 −
RF Characteristics
Gain Bandwidth Product fTVCE = 1 V, IC = 15 mA, f = 2 GHz 15 18 −GHz
Insertion Power Gain |S21e|2VCE = 1 V, IC = 15 mA, f = 2 GHz 11 13 −dB
Noise Figure NF VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−0.8 1.5 dB
Associated Gain Ga
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
9.5 11.5 −dB
Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0 mA, f = 1 MHz −0.2 0.4 pF
NESG2046M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
09/09/2004
0.15
0.57
0.285
0.125
0.44±0.05
1
23
(Bottom View)
0.15
0.84±0.05
0.125
0.15
0.64±0.05
0.11
0.4 MAX.
T7
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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per RoHS
Concentration Limit per RoHS
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Concentration contained
in CEL devices
-A -AZ
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PBDE < 1000 PPM Not Detected
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