COMSET SEMICONDUCT ORS 1/4
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
SILICON EPITAXIAL-BASE DARLINGTON
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
MJ2500
MJ3000 60
VCBO Collector-Base Voltage IE=0
MJ2501
MJ3001 80
Vdc
MJ2500
MJ3000 60
VCEO Collector-EmitterVoltage IB=0
MJ2501
MJ3001 80
Vdc
VEBO Emitter-Base Voltage IC=0
MJ2500
MJ3000
MJ2501
MJ3001 5.0 Vdc
ICCollector Current
MJ2500
MJ3000
MJ2501
MJ3001
10 Adc
The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.
They are intented for use in power linear and switching applications.
The complementary PNP types are the MJ3000 and MJ3001 respectively.
COMSET SEMICONDUCT ORS 2/4
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
Symbol Ratings Value Unit
IBBase Current
MJ2500
MJ3000
MJ2501
MJ3001
0.2 Adc
PTPower Dissipation @ TC < 25° MJ2500
MJ3000
MJ2501
MJ3001 150 Watts
TJ TsJunction
Storage Temperature
MJ2500
MJ3000
MJ2501
MJ3001
200
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
MJ2500
MJ3000
MJ2501
MJ3001 1.17 °C/W
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
MJ2500
MJ3000 60 - -
BVCEO Collector-Emitter
Break do wn Voltag e (*) IC=100 mAdc, IB=0
MJ2501
MJ3001 80 - -
Vdc
COMSET SEMICONDUCT ORS 3/4
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCE=30 Vdc, IB=0 MJ2500
MJ3000 --
ICEO Collector Cutoff Current
VCE=40 Vdc, IB=0 MJ2501
MJ3001 --
1.0 mAdc
IEBO Emitter Cutoff Current VBE=5.0 Vdc, IC=0
MJ2500
MJ2501
MJ3000
MJ3001
--2.0mAdc
VCB=60 V, RBE=1.0 k ohm MJ2500
MJ3000 --
VCB=80 V, RBE=1.0 k ohm MJ2501
MJ3001 --
1.0
VCB=60 V, RBE=1.0 k ohm,
TC=150°C MJ2500
MJ3000 --
ICER
Collector-Emitter Leakage
Current
VCB=80 V, RBE=1.0 k ohm,
TC=150°C MJ2501
MJ3001 --
5.0
mAdc
IC=5.0 A, IB=20 mAdc MJ2500
MJ3000
MJ2501
MJ3001
--2.0
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=50 mAdc
MJ2500
MJ3000
MJ2501
MJ3001
--4.0
Vdc
VBE Base-Emitter Voltage (*) IC=5.0 Adc, VCE=3.0Vdc
MJ2500
MJ3000
MJ2501
MJ3001
--3V
hfe DC Current Gain (*) VCE=3.0 Vdc, IC=5.0 Adc
MJ2500
MJ3000
MJ2501
MJ3001
1000 -
--
--
For PNP types current and voltage values are negative
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCT ORS 4/4
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
MECHAN ICAL DATA CASE TO- 3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter