Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™
Compact IGBT
Series Module
200 Amperes/600 Volts
MG200J6ES61
15/05
Description:
Powerex Six IGBTMOD™
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge confi guration, with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplifi ed system assembly and
thermal management.
Features:
£ Integrated Thermistor
£ Low VCE(sat)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG200J6ES61 is a
600V (VCES), 200 Ampere
Six IGBTMOD™ Compact IGBT
Series Module.
Current Rating VCES
Type Amperes Volts (x 10)
MG 200 60
Dimensions Inches Millimeters
A 4.80±0.04 122.0±1.0
B 1.97±0.01 50.0±0.3
C 1.61±0.03 42.0±0.8
D 4.33±0.01 110.0±0.3
E 2.44±0.04 62.0±1.0
F 2.32±0.02 59.0±0.5
G 0.81±0.03 20.5±0.8
H 0.39±0.03 10.0±0.8
J 0.55 14.0
K 0.39 10.0
L 0.24 6.0
M 0.22 Dia. 5.5 Dia.
N M5 M5
Dimensions Inches Millimeters
P 0.79±0.03 20.0±0.8
Q 0.86±0.03 22.0±0.8
R 1.12±0.03 28.5±0.8
S 0.55±0.03 13.9±0.8
T 0.24 Rad. 6.0 Rad.
U 0.53 13.6
V 1.02 -0.01/+0.04 26.0-0.3/+1.0
W 0.32 8.2
X 4.69±0.02 119.0±0.5
Y 0.88 22.5
Z 0.21 5.35
AA 0.42 10.7
Outline Drawing and Circuit Diagram
P
4
3
2
1
2
4
6
8
DETAIL "A"
A
B
L
M
E
X
C
H
H
D
F
ST
JK
N P
VU W
DETAIL "A"
CN-1
CN-2
1
3
5
7
U
V
W
CN-1:7 CN-1:6
CN-1:5
CN-2:3
CN-1:4
CN-1:3
CN-2:2
CN-1:2
CN-1:1
CN-2:1
CN-1:8
CN-2:4
N
W
Z AA
V
U
YY
N
G
P
P
QQ R
R
1 G(Z)
2 G(Y)
3 G(X)
4 E(L)
CN-2 SIGNAL TERMINAL
1 E(W)
2 G(W)
5 E(U)
6 G(U)
3 E(V)
4 G(V)
7 TH1
8 TH2
CN-1 SIGNAL TERMINAL
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200J6ES61
Six IGBTMOD™
Compact IGBT Series Module
200 Amperes/600 Volts
2 5/05
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol MG200J6ES61 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 375 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current (TC = 25°C) IC 200 Amperes
Peak Collector Current (TC = 25°C) ICP 400 Amperes
Emitter Current (TC = 25°C) IE 200 Amperes
Peak Emitter Current (TC = 25°C) IEM 400 Amperes
Collector Dissipation (TC = 25°C) PC 1000 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Gate Leakage Current IGES VGE = 20V, VCE = 0V — — ±500 nA
Collector-Emitter Cutoff Current ICES VGE = 0V, VCE = 600V — — 1.0 mA
Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 200mA 5.0 6.5 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 200A, Tj = 25°C — 2.0 2.4 Volts
VGE = 15V, IC = 200A, Tj = 125°C — — 2.6 Volts
Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 40,000 — pF
Inductive Load td(on) — — 1.0 µs
Switching toff VCC = 300V, IC = 200A, — — 1.2 µs
Times tf VGE = ±15V, RG = 10Ω — — 0.5 µs
Reverse Recovery Time trr — — 0.3 µs
Emitter-Collector Voltage VEC IE = 200A — 2.2 2.6 Volts
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Zero Power Resistance R25 ITM = 0.2mA 100 — kΩ
B Value B25/85 TC = 25°C/TC = 85°C — 4390 — K
Junction to Case Thermal Resistance Rth(j-c)Q IGBT (Per 1/6 Module) — — 0.125 °C/Watt
Rth(j-c)D
FWDi (Per 1/6 Module) — — 0.195 °C/Watt
Contact Thermal Resistance Rth(c-f) — — 0.05 — °C/Watt
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across P-N Terminals ≤400 Volts
Gate Voltage VGE — 13.5 ~ 16.5 Volts
Switching Frequency fC — 0 ~ 20 kHz
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200J6ES61
Six IGBTMOD™
Compact IGBT Series Module
200 Amperes/600 Volts
35/05
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
200
300
400
0
500
100
200
300
400
0
500
102
101
100
0 250200100 15050
12
6
0
2
4
8
10
0 3.52.0 2.5 3.01.00.5 1.5
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
86420 141210
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
100
200
300
400
500
Tj = 25°C
Tj = 125°C
Tj = -40°C
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E(off), (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
VGE = 15V
Tj = 25°C
Tj = 125°C
FORWARD CURRENT, IF, (AMPERES)
FREE-WHEEL DIODE CHARACTERISTICS
(TYPICAL)
0 3.52.5 3.01.0 1.5 2.00.5
FORWARD VOLTAGE, VF, (VOLTS)
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = -40°C IC = 400A
IC = 200A
IC = 100A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
6
0
2
4
8
10
Tj = 125°C
IC = 400A
IC = 200A
IC = 100A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0 5 10 15 20
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
6
0
2
4
8
10
Tj = -40°C
IC = 400A
IC = 200A
IC = 100A
VCE = 5V
VCC = 300V
VGE = ±15V
RG = 10Ω
Tj = 25°C
Tj = 125°C
102
101
100
0 250200100 15050
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E(on), (mJ/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 300V
VGE = ±15V
RG = 10Ω
Tj = 25°C
Tj = 125°C
100
102
101
SWITCHING LOSS, E(off), (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
0 2515 20105
GATE RESISTANCE, RG, (Ω)
VCC = 300V
VGE = ±15V
RG = 10Ω
Tj = 25°C
Tj = 125°C
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200J6ES61
Six IGBTMOD™
Compact IGBT Series Module
200 Amperes/600 Volts
4 5/05
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
5000 25001000 1500 2000
GATE CHARGE, QG, (nC)
GATE CHARGE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
0
100
200
300
400
500
GATE-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
10-2 10-1 100101102
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
105
102
103
104
100
102
101
SWITCHING LOSS, ESW(on), (mJ/PULSE)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
5 3020 251510
GATE RESISTANCE, RG, (Ω)
VCC = 300V
VGE = ±15V
RG = 200A
Tj = 25°C
Tj = 125°C
100
200
300
400
0
500
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE BIAS SAFE OPERATION AREA
(TYPICAL)
0 700200 300 400 500 600100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
VGE = ±15V
RG = 10Ω
Tj ≤ 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS.
GATE-EMITTER VOLTAGE
(TYPICAL)
VGE = 0V
f = 1MHz
TC = 25°C
Cies
Coes
Cres
IC = 200A
5000 25001000 1500 2000
GATE CHARGE, QG, (nC)
0
4
8
12
16
20
IC = 200A
TIME, (s)
TRANSIENT IMPEDANCE, Rth(j-c)
10-3 10-2 10-1 100101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-1
10-2
100
TIME, (s)
TRANSIENT IMPEDANCE, Rth(j-c)
10-3 10-2 10-1 100101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-1
10-2
100
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 0.125°C/W
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 0.195°C/W
TC = 25°C
TC = 25°C
300V
200V
100V
VCE = 0V
