MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMODTM Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6 CN-1:4 CN-1:2 4 2 1 3 4 3 6 5 8 7 Y 2 1 CN-1:8 CN-1:5 CN-1:3 CN-1:1 U V W CN-2:3 CN-2:2 Y Z CN-2:1 CN-1 SIGNAL TERMINAL 1 E(W) 2 G(W) CN-2:4 AA DETAIL "A" 3 E(V) 4 G(V) 5 E(U) 6 G(U) 7 TH1 8 TH2 CN-2 SIGNAL TERMINAL N 1 G(Z) 2 G(Y) 3 G(X) 4 E(L) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N 5/05 Inches 4.800.04 1.970.01 1.610.03 4.330.01 2.440.04 2.320.02 0.810.03 0.390.03 0.55 0.39 0.24 0.22 Dia. M5 Millimeters 122.01.0 50.00.3 42.00.8 110.00.3 62.01.0 59.00.5 20.50.8 10.00.8 14.0 10.0 6.0 5.5 Dia. M5 Dimensions Inches Millimeters P 0.790.03 20.00.8 Q 0.860.03 22.00.8 R 1.120.03 28.50.8 S 0.550.03 13.90.8 T 0.24 Rad. 6.0 Rad. U 0.53 13.6 V 1.02 -0.01/+0.04 26.0-0.3/+1.0 W 0.32 8.2 X 4.690.02 119.00.5 Y 0.88 22.5 Z 0.21 5.35 AA 0.42 10.7 Description: Powerex Six IGBTMODTM Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Integrated Thermistor Low VCE(sat) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG200J6ES61 is a 600V (VCES), 200 Ampere Six IGBTMODTM Compact IGBT Series Module. Type Current Rating Amperes VCES Volts (x 10) MG 200 60 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMODTM Compact IGBT Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Characteristics Power Device Junction Temperature Storage Temperature Symbol MG200J6ES61 Units Tj -20 to 150 C Tstg -40 to 125 C Mounting Torque, M5 Mounting Screws -- 31 in-lb Mounting Torque, M5 Main Terminal Screws -- 31 in-lb Module Weight (Typical) -- 375 Grams VISO 2500 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts Gate-Emitter Voltage VGES 20 Volts IC 200 Amperes ICP 400 Amperes IE 200 Amperes Peak Emitter Current (TC = 25C) IEM 400 Amperes Collector Dissipation (TC = 25C) PC 1000 Watts Collector Current (TC = 25C) Peak Collector Current (TC = 25C) Emitter Current (TC = 25C) Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Gate Leakage Current IGES VGE = 20V, VCE = 0V -- -- 500 nA Collector-Emitter Cutoff Current ICES VGE = 0V, VCE = 600V -- -- 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 200mA 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Input Capacitance Cies Inductive Load td(on) Switching VGE = 15V, IC = 200A, Tj = 25C -- 2.0 2.4 Volts VGE = 15V, IC = 200A, Tj = 125C -- -- 2.6 Volts VCE = 10V, VGE = 0V, f = 1MHz -- 40,000 -- pF -- -- 1.0 s toff VCC = 300V, IC = 200A, -- -- 1.2 s Times tf VGE = 15V, RG = 10 -- -- 0.5 s Reverse Recovery Time trr -- -- 0.3 s Emitter-Collector Voltage VEC IE = 200A -- 2.2 2.6 Volts Symbol Condition Min. R25 ITM = 0.2mA B Value B25/85 TC = 25C/TC = 85C Junction to Case Thermal Resistance Rth(j-c)Q Rth(j-c)D Thermal Characteristics Characteristic Zero Power Resistance Contact Thermal Resistance Rth(c-f) Typ. Max. Units 100 -- k -- 4390 -- K IGBT (Per 1/6 Module) -- -- 0.125 C/Watt FWDi (Per 1/6 Module) -- -- 0.195 C/Watt -- 0.05 -- C/Watt Value Units 400 Volts -- Recommended Conditions for Use Characteristic Symbol Condition Supply Voltage VCC Applied across P-N Terminals Gate Voltage VGE -- fC -- Switching Frequency 2 13.5 ~ 16.5 Volts 0 ~ 20 kHz 5/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMODTM Compact IGBT Series Module 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 12 500 400 300 200 100 0 0.5 1.0 1.5 2.0 2.5 3.0 400 300 200 100 0 3.5 VGE = 0V Tj = 25C Tj = 125C Tj = -40C 0 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.0 2.5 3.0 10 IC = 400A 8 IC = 200A 6 IC = 100A 4 2 0 5 10 15 SWITCHING LOSS, E(on), (mJ/PULSE) 101 0 50 100 150 200 COLLECTOR CURRENT, IC, (AMPERES) 250 2 0 5 10 15 20 TRANSFER CHARACTERISTICS (TYPICAL) 500 Tj = -40C 10 IC = 400A 8 IC = 200A 6 IC = 100A 4 2 0 5 10 15 300 200 100 0 2 4 6 8 10 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) 14 102 VCC = 300V VGE = 15V RG = 10 Tj = 25C Tj = 125C 101 100 VCE = 5V Tj = 25C Tj = 125C Tj = -40C 400 0 20 102 VCC = 300V VGE = 15V RG = 10 Tj = 25C Tj = 125C IC = 100A 4 0 3.5 SWITCHING LOSS, E(off), (mJ/PULSE) 102 IC = 200A 6 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 20 IC = 400A 8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, E(off), (mJ/PULSE) 1.5 Tj = 25C 10 FORWARD VOLTAGE, VF, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 5/05 1.0 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 125C 100 0.5 12 12 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25C Tj = 125C FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 500 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE CHARACTERISTICS (TYPICAL) 0 50 100 150 200 COLLECTOR CURRENT, IC, (AMPERES) 250 VCC = 300V VGE = 15V RG = 10 Tj = 25C Tj = 125C 101 100 0 5 10 15 20 25 GATE RESISTANCE, RG, () 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMODTM Compact IGBT Series Module 200 Amperes/600 Volts SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 105 VCC = 300V VGE = 15V RG = 200A Tj = 25C Tj = 125C 500 10 15 20 25 COLLECTOR CURRENT, IC, (AMPERES) Cres 103 VGE = 0V f = 1MHz TC = 25C 10-1 100 101 400 300 200 0 102 VGE = 15V RG = 10 Tj 125C 100 0 100 200 300 400 500 600 700 GATE RESISTANCE, RG, () GATE-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) GATE CHARGE VS. GATE-EMITTER VOLTAGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 20 IC = 200A 300 200 100 0 Coes 102 10-2 30 400 0 104 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) 101 IC = 200A TC = 25C 16 12 200V TRANSIENT IMPEDANCE, Rth(j-c) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) 101 5 500 Cies GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS, ESW(on), (mJ/PULSE) 102 100 REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 300V 100V 8 VCE = 0V 4 0 100 10-1 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.125C/W 0 500 1000 1500 2000 GATE CHARGE, QG, (nC) 2500 10-2 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 TRANSIENT IMPEDANCE, Rth(j-c) TC = 25C 100 10-1 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.195C/W 10-2 10-3 10-2 10-1 100 101 TIME, (s) 4 5/05