Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 -0.05 Features 0.16+0.10 -0.06 0.40.2 5 1.50+0.25 -0.05 * Optimum for RF amplification of FM/AM radios * High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 2.8+0.2 -0.3 3 (0.95) (0.95) 1.90.1 (0.65) 2 1 2.90+0.20 -0.05 Absolute Maximum Ratings Ta = 25C Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1.1+0.2 -0.1 Rating 0 to 0.1 Symbol 1.1+0.3 -0.1 10 Parameter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: U Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 30 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 3 V Base-emitter voltage VBE VCB = 6 V, IE = -1 mA Forward current transfer ratio * hFE VCB = 6 V, IE = -1 mA 65 450 0.72 Unit V 260 Transition frequency fT VCB = 6 V, IE = -1 mA, f = 100 MHz Reverse transfer capacitance (Common emitter) Cre VCB = 6 V, IE = -1 mA, f = 10.7 MHz 0.8 Power gain GP VCB = 6 V, IE = -1 mA, f = 100 MHz 24 dB Noise figure NF VCB = 6 V, IE = -1 mA, f = 100 MHz 3.3 dB 650 MHz 1.0 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank C D hFE 65 to 160 100 to 260 Publication date: March 2003 SJC00114BED 1 2SC2404 PC Ta IC VCE Ta = 25C 80 60 A 6 40 A 4 20 A 2 0 120 160 0 4 VCE = 6 V 25C Collector current IC (mA) -25C 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2.0 100 25C 0.1 Ta = 75C -25C 0.01 0.1 1 10 800 600 400 200 -10 Emitter current IE (mA) -100 Reverse transfer capacitance Cre (pF) (Common emitter) 1 000 240 Ta = 75C 180 25C -25C 120 60 1 0.8 0.4 10 100 Collector-emitter voltage VCE (V) SJC00114BED 100 Cob VCB 1.2 1 10 Collector current IC (mA) 1.6 0 0.1 160 300 0 0.1 100 IC = 1 mA f = 10.7 MHz Ta = 25C 2.0 120 VCE = 6 V Cre VCE 2.4 80 Base current IB (A) Collector current IC (mA) VCB = 6 V Ta = 25C Transition frequency fT (MHz) 40 hFE IC 1 fT I E 2 0 360 10 1 200 -1 0 16 IC / IB = 10 Base-emitter voltage VBE (V) 0 - 0.1 4 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VBE 30 Ta = 75C 12 6 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) 25 8 Forward current transfer ratio hFE 80 8 2 Collector output capacitance C (pF) (Common base, input open circuited) ob 40 10 80 A 8 40 0 VCE = 6 V Ta = 25C Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (mW) 120 12 IB = 100 A 10 160 0 IC I B 12 200 1.2 IE = 0 f = 1 MHz Ta = 25C 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 Collector-base voltage VCB (V) 30 2SC2404 30 6V 20 15 f = 100 MHz Rg = 50 k Ta = 25C 10 Noise figure NF (dB) VCE = 10 V 25 bie gie 8 6 VCE = 6 V, 10 V 4 10 yie = gie + jbie VCE = 10 V 18 -10 -100 Emitter current IE (mA) -1 100 12 10 8 6 -4 mA -1 mA 58 IE = -7 mA 100 -5 -20 -40 -1 mA 100 1.0 150 -2 mA -4 mA 150 -60 f = 150 MHz IE = -7 mA 100 - 0.3 - 0.2 - 0.1 0 Reverse transfer conductance gre (mS) 58 100 -80 -120 9 12 15 150 -2 mA -4 mA 0.8 100 -7 mA 0.6 58 0.4 25 0.2 yfe = gfe + jbfe VCE = 10 V f = 150 MHz - 0.4 6 boe goe 1.2 10.7 58 -100 -6 - 0.5 3 Input conductance gie (mS) IE = - 0.5 mA -1 mA -1 - 0.4 mA Forward transfer susceptance bfe (mS) yre = gre + jbre VCE = 10 V -4 f = 10.7 MHz 0 bfe gfe 0 10.7 25 -3 58 25 0 -100 58 -1 mA 25 Emitter current IE (mA) bre gre 0 -2 -10 Output susceptance boe (mS) -1 0 - 0.1 -7 mA 100 -2 mA 14 2 0 - 0.1 150 -4 mA 16 4 2 5 Reverse transfer susceptance bre (mS) 20 Input susceptance bie (mS) f = 100 MHz Rg = 50 Ta = 25C 35 Power gain GP (dB) NF IE 12 IE = - 0.5 mA GP I E 40 f = 10.7 MHz 0 0 20 40 60 80 100 Forward transfer conductance gfe (mS) SJC00114BED 0 0.1 0.2 yoe = goe + jboe VCE = 10 V 0.3 0.4 0.5 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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