1
Transistors
Publication date: March 2003 SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 030V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 0.72 V
Forward current transfer ratio *hFE VCB = 6 V, IE = −1 mA 65 260
Transition frequency fTVCB = 6 V, IE = −1 mA, f = 100 MHz 450 650 MHz
Reverse transfer capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain GPVCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB
Unit: mm
■Electrical Characteristics Ta = 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: U
Rank C D
hFE 65 to 160 100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2SC2404
2SJC00114BED
IC VBE VCE(sat) IChFE IC
PC TaIC VCE IC IB
fT IECre VCE Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
048 1612
0
12
10
8
6
4
2
T
a
= 25°C
I
B
= 100 µA
80 µA
60 µA
40 µA
20 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
04080 160120
0
12
10
8
6
4
2
V
CE
= 6 V
T
a
= 25°C
Base current IB (µA)
Collector current IC (mA)
0 2.01.60.4 1.20.8
0
30
25
20
15
10
5
V
CE
= 6 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
= 6 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
− 0.1 −1−10 −100
0
1 200
1 000
800
600
400
200
V
CB
= 6 V
T
a
= 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
IC = 1 mA
f = 10.7 MHz
Ta = 25°C
Collector-emitter voltage VCE (V)
Reverse transfer capacitance Cre (pF)
(Common emitter)
030252051510
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
2SC2404
3
SJC00114BED
GP IENF IEbie gie
bre gre bfe gfe boe goe
− 0.1 −1−10 −100
0
40
30
10
25
35
20
5
15
f = 100 MHz
R
g
= 50 Ω
T
a
= 25°C
V
CE
= 10 V
6 V
Power gain G
P
(dB)
Emitter current I
E
(mA)
− 0.1 −1−10 −100
0
12
10
8
6
4
2
f = 100 MHz
R
g
= 50 kΩ
T
a
= 25°C
V
CE
= 6 V, 10 V
Noise figure NF (dB)
Emitter current IE (mA)
015936 12
0
20
16
12
8
4
18
14
10
6
2
yie = gie + jbie
VCE = 10 V
100
100
−2 mA
−1 mA
−4 mA
−7 mA
IE = − 0.5 mA
150
f = 10.7 MHz
58
25
58
25
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS)
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
−6
0
−1
−2
−3
−4
−5
y
re
= g
re
+ jb
re
V
CE
= 10 V
f = 150 MHz
I
E
= −7 mA
−4 mA
−1 mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance bre (mS)
0 1008020 6040
−120
0
−20
−40
−60
−80
−100
yfe = gfe + jbfe
VCE = 10 V
f = 150 MHz
10.7
− 0.4 mA
−1 mA
−2 mA
−4 mA
IE = −7 mA
100
100
100
150
150
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance bfe (mS)
0 0.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
yoe = goe + jboe
VCE = 10 V
f = 10.7 MHz
IE = − 0.5 mA
−2 mA
−4 mA
−7 mA
−1 mA
58
25
100
150
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
