HN2S03FU
2004-02-25
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03FU
High Speed Switching Application
HN2S03FU is composed of 3 independent diodes.
Low forward voltage : VF (3) = 0.50V (typ.)
Low reverse current : IR= 0.5µA (max)
Small total capacitance : CT = 3.9pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 25 V
Reverse voltage VR 20 V
Maximum (peak) forward current IFM 100 * mA
Average forward current IO 50 * mA
Surge current (10ms) IFSM 1 * A
Power dissipation P 200 ** mW
Junction temperature Tj 125 °C
Storage temperature range Tstg 55125 °C
Operating temperature range Topr 40110 °C
* : This is maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 or 3 diodes, the maximum ratings
per diodes is 75 % of the single diode one.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) I
F = 1mA 0.33
VF (2) I
F = 5mA 0.38
Forward voltage
VF (3) I
F = 50mA 0.50 0.55
V
Reverse current IR V
R = 20V 0.5
µA
Total capacitance CT V
R = 0, f = 1MHz 3.9 pF
JEDEC
EIAJ
TOSHIBA 1-2T1C
Weight: 6.2mg(Typ.)
Unit: mm
HN2S03FU
2004-02-25
2
Pin Assignment (Top View) Marking
A8
HN2S03FU
2004-02-25
3
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030619EAA
RESTRICTIONS ON PRODUCT USE