APTGT300U170D4G
APTGT300U170D4G – Rev 0 November, 2008
www.microsemi.com 1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 600
IC Continuous Collector Current TC = 80°C 300
ICM Pulsed Collector Current TC = 25°C 600
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1667 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 600A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1700V
IC = 300A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Single switch
Trench + Field Stop IGBT
Power Module
APTGT300U170D4G
APTGT300U170D4G – Rev 0 November, 2008
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 5 mA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 300A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 13 mA 5.2 5.8 6.4 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 26
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 0.88 nF
QG Gate charge VGE=±15V, IC=300A
VCE=900V 3.8 µC
Td(on) Turn-on Delay Time 250
Tr Rise Time 100
Td(off) Turn-off Delay Time 850
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω 120
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 1000
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω 200
ns
Eon Turn On Energy Tj = 125°C 108
Eoff Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω Tj = 125°C 100
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C 1200 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 750
IRRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA
IF DC forward current Tc=80°C 300 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 300A
VGE = 0V Tj = 125°C 1.9 V
Tj = 25°C 35
Err Reverse Recovery Energy Tj = 125°C 70 mJ
Tj = 25°C 420
trr Reverse Recovery Time Tj = 125°C 525 ns
Tj = 25°C 76
Qrr Reverse Recovery Charge
IF = 300A
VR = 900V
di/dt =3500A/µs
Tj = 125°C 124 µC
APTGT300U170D4G
APTGT300U170D4G – Rev 0 November, 2008
www.microsemi.com 3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.075
RthJC Junction to Case Thermal Resistance Diode 0.13 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M6 3 5
Torque Mounting torque M4 1 2
N.m
Wt Package Weight 350 g
D4 Package outline (dimensions in mm)
APTGT300U170D4G
APTGT300U170D4G – Rev 0 November, 2008
www.microsemi.com 4-5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
150
300
450
600
00.511.522.533.54
V
CE
(V)
I
C
(A)
Output Characteris tics
V
GE
=15V
V
GE
=13V
V
GE
=20V
V
GE
=9V
0
150
300
450
600
012345
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristi cs
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
150
300
450
600
567891011
V
GE
(V)
I
C
(A)
Energy losses vs Collector Curren t
Eon
Eoff
Err
0
75
150
225
300
0 150 300 450 600
I
C
(A)
E (mJ)
V
CE
= 900V
V
GE
= 15V
R
G
= 4.5Ω
T
J
= 125°C
Eon
Eoff
Err
0
100
200
300
400
0 10203040
Gate Resistanc e (ohm s)
E (mJ)
V
CE
= 900V
V
GE
=15V
I
C
= 300A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operati ng Area
0
150
300
450
600
750
0 400 800 1200 1600 2000
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=4.5Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT300U170D4G
APTGT300U170D4G – Rev 0 November, 2008
www.microsemi.com 5-5
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
150
300
450
600
00.511.522.53
V
F
(V)
I
F
(A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
0 50 100 150 200 250 300 350 400
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=900V
D=50%
R
G
=4.5 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
