APTGT300U170D4G Single switch Trench + Field Stop IGBT Power Module VCES = 1700V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control 1 3 Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated 5 2 * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA TC = 25C Max ratings 1700 600 300 600 20 1667 Tj = 125C 600A@1650V TC = 25C TC = 80C TC = 25C Reverse Bias Safe Operating Area Unit V A November, 2008 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300U170D4G - Rev 0 Symbol VCES APTGT300U170D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 13 mA VGE = 20V, VCE = 0V 5.2 Typ 2.0 2.4 5.8 Max Unit 5 2.4 mA 6.4 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Gate charge Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A RG = 4.5 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A RG = 4.5 VGE = 15V Tj = 125C VBus = 900V IC = 300A Tj = 125C RG = 4.5 VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Test Conditions Min 1700 Typ 26 0.88 nF 3.8 C 250 100 ns 850 120 300 100 1000 ns 200 108 mJ 100 1200 A Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC forward current VF Diode Forward Voltage Err Reverse Recovery Energy trr Reverse Recovery Time VR=1700V IF = 300A VGE = 0V IF = 300A VR = 900V di/dt =3500A/s Qrr Reverse Recovery Charge www.microsemi.com Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Max 750 1000 300 1.8 1.9 35 70 420 525 76 124 Unit V A A 2.2 V mJ November, 2008 IRRM Typ ns C 2-5 APTGT300U170D4G - Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT300U170D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 3500 -40 -40 -40 3 1 Typ Max 0.075 0.13 Unit C/W V 150 125 125 5 2 350 C N.m g www.microsemi.com 3-5 APTGT300U170D4G - Rev 0 November, 2008 D4 Package outline (dimensions in mm) APTGT300U170D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 TJ = 125C TJ=25C 450 IC (A) 450 IC (A) VGE=20V TJ=125C 300 VGE=13V 300 VGE=15V 150 150 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 450 E (mJ) TJ=125C 300 4 5 Eon Eoff 150 75 TJ=125C Err 0 6 7 8 9 10 0 11 150 Switching Energy Losses vs Gate Resistance 600 IC (A) Eon 200 Eoff 100 450 300 VGE=15V TJ=125C RG=4.5 150 Err 0 0 40 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 IGBT November, 2008 0.06 0 10 20 30 Gate Resistance (ohms) 0.08 0.07 600 750 VCE = 900V VGE =15V IC = 300A TJ = 125C 0 450 Reverse Bias Safe Operating Area 400 300 300 IC (A) VGE (V) 0.7 0.05 0.04 0.5 0.03 0.3 0.02 0.01 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300U170D4G - Rev 0 5 E (mJ) 3 VCE (V) VCE = 900V VGE = 15V RG = 4.5 TJ = 125C 225 0 Thermal Impedance (C/W) 2 300 TJ=25C 150 1 Energy losses vs Collector Current Transfert Characteristics 600 IC (A) VGE=9V APTGT300U170D4G Forward Characteristic of diode 600 20 ZVS 15 VCE=900V D=50% RG=4.5 TJ=125C TC=75C ZCS 10 TJ=25C 450 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 300 150 5 hard switching 0 0 0 TJ=125C 0 50 100 150 200 250 300 350 400 IC (A) 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.14 0.12 0.9 0.1 0.7 0.08 Diode 0.5 0.06 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300U170D4G - Rev 0 November, 2008 rectangular Pulse Duration (Seconds)