SFH 310
SFH 310 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 310 SFH 310 FA
Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A)
2007-04-03 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm (SFH 310) und bei
880 nm (SFH 310 FA)
• Hohe Linearität
• 3 mm-Plastikbauform
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 310 Q62702P0874
SFH 310-2/3 Q62702P3595
SFH 310 FA Q62702P1673
SFH 310 FA-2/3 Q62702P3596
Features
• Especially suitable for applications from
400 nm to 1100 nm (SFH 310) and of 880 nm
(SFH 310 FA)
• High linearity
• 3 mm plastic package
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2007-04-03 2
SFH 310, SFH 310 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 70 V
Kollektorstrom
Collector current IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 100 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
SFH 310, SFH 310 FA
2007-04-03 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 310 SFH 310 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 780 880 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ470 …1070 740 …1070 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.19 0.19 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B
L×W0.65 ×0.65 0.65 ×0.65 mm ×mm
Halbwinkel
Half angle ϕ± 25 ± 25 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 10 10 pF
Dunkelstrom
Dark current
VCE = 10 V, E=0
ICEO 5 (≤ 50) 5 (≤ 50) nA
Fotostrom
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
≥ 0.4
4≥ 0.4
–mA
mA
2007-04-03 4
SFH 310, SFH 310 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 310:
Ev = 1000 Ix, Normlicht/
standard light A, VCE = 5 V
IPCE
IPCE
0.4 …0.8
2.1
0.63 …1.25
3.4
1.0 …2.0
5.4
1.6 …3.2
8.6
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf57 812μs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
SFH 310, SFH 310 FA
2007-04-03 5
TA=25°C, λ = 950 nm
Relative Spectral Sensitivity,
SFH 310 Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
Relative Spectral Sensitivity,
SFH 310 FA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz
λ
OHF02331
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2007-04-03 6
SFH 310, SFH 310 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
0.4 (0.016)
0.6 (0.024)
3.1 (0.122)
3.4 (0.134)
Area not flat
5.7 (0.224)
6.1 (0.240)
ø2.7 (0.106)
ø2.9 (0.114)
4.8 (0.189)
4.4 (0.173)
3.7 (0.146)
3.5 (0.138)
27.0 (1.063)
29.0 (1.142)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
0.7 (0.028)
0.4 (0.016)
0.6 (0.024)
1.2 (0.047)
1.8 (0.071)
GEXY6710
0.9 (0.035)
1.1 (0.043)
Collector
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 310, SFH 310 FA
2007-04-03 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organiza tion.
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
