AUIRF7313Q
VDSS 30V
RDS(on) typ. 23m
ID 6.9A
max. 29m
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.9
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.8
IDM Pulsed Drain Current 58
PD @TA = 25°C Maximum Power Dissipation 2.4 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 450
mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJL Junction-to-Drain Lead ––– 20
RJA Junction-to-Ambient  ––– 62.5
°C/W
SO-8
AUIRF7313Q
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF7313Q SO-8 Tape and Reel 4000 AUIRF7313QTR
G D S
Gate Drain Source
D1
D1
D
2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
AUIRF7313Q
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, Starting TJ = 25°C, L = 76mH, RG = 50, IAS = 3.5A VGS =10V. Part not recommended for use above this value.
ISD 3.5A, di/dt 590A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
When mounted on 1 inch square copper board.
R
is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 23 29 mVGS = 10V, ID = 6.9A
––– 32 46 VGS = 4.5V, ID = 5.5A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 7.5 ––– ––– S VDS = 15V, ID = 3.5A
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V,VGS = 0V,TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 22 33
nC
ID = 3.5A
Qgs Gate-to-Source Charge ––– 2.6 3.9
VDS = 15V
Qgd Gate-to-Drain Charge ––– 6.8 10 VGS = 10V
td(on) Turn-On Delay Time ––– 3.7 –––
ns
VDD = 15V
tr Rise Time ––– 7.3 ––– ID = 3.5A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.8
tf Fall Time ––– 11 ––– VGS = 10V
Ciss Input Capacitance ––– 755 –––
pF
VGS = 0V
Coss Output Capacitance ––– 310 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.0
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 58 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 3.5A,VGS = 0V 
trr Reverse Recovery Time ––– 27 40 ns TJ = 25°C ,IF = 3.5A,
Qrr Reverse Recovery Charge ––– 43 65 nC di/dt = 100A/µs 
AUIRF7313Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
BOTTOM 2.8V
60µs PULSE WIDTH Tj = 25°C
2.8V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
BOTTOM 2.8V
60µs PULSE WIDTH
Tj = 175°C
2.8V
1234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 15V
60µs PULSE WIDTH
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.9A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 3.5A
AUIRF7313Q
4 2015-9-30
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Maximum Avalanche Energy vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0.10 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µs
1ms
10ms
DC
25 50 75 100 125 150 175
TA , Ambient Temperature (°C)
0
1
2
3
4
5
6
7
ID, Drain Current (A)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
2000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.0A
1.6A
BOTTOM 3.5A
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
AUIRF7313Q
5 2015-9-30
Fig 12. Typical On-Resistance Vs. Drain
Current Fig 13. Typical On-Resistance Vs. Gate
Voltage
010 20 30 40 50 60
ID , Drain Current (A)
10
20
30
40
50
60
70
80
RDS ( on) , Drain-to-Source On Resistance (m)
VGS= 4.5V
VGS= 10V
04812 16 20
VGS, Gate-to-Source Voltage (V)
10
20
30
40
50
60
70
RDS(on), Drain-to -Source On Resistance (m)
TJ = 25°C
TJ = 125°C
ID = 3.5A
AUIRF7313Q
6 2015-9-30
Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 15a. Unclamped Inductive Test Circuit Fig 15b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L
Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRF7313Q
7 2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIM ETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIM EN SIO N D O ES NO T IN C LU D E M O LD PRO TRUSIO N S.
6 DIM EN SIO N D O ES NO T IN C LU D E M O LD PRO TRUSIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
AUIRF7313Q
8 2015-9-30
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
AUIRF7313Q
9 2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
ESD
Machine Model Class M1B (+/- 100V)†
AEC-Q101-002
Human Body Model Class H1A (+/- 500V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015  Updated datasheet with corporate template
 Corrected ordering table on page 1.
3/27/2014
 Added "Logic Level Gate Drive" bullet in the features section on page 1
 Updated part marking on page 7.
 Updated data sheet with new IR corporate template
† Highest passing voltage.