Order this document by MMBF5457LT1/D SEMICONDUCTOR TECHNICAL DATA N-Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc VGS(r) 25 Vdc IG 10 mAdc Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W TJ, Tstg - 55 to +150 C Reverse Gate-Source Voltage Gate Current CASE 318 - 08, STYLE 10 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Junction and Storage Temperature DEVICE MARKING MMBF5457LT1 = 6D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 25 -- -- Vdc -- -- -- -- 1.0 200 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) IGSS nAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) 0.5 -- - 6.0 Vdc Gate Source Voltage (VDS = 15 Vdc, ID = 100 Adc) VGS -- - 2.5 -- Vdc IDSS 1.0 -- 5.0 mAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR- 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. Thermal Clad is a trademark of the Bergquist Company Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Forward Transfer Admittance(2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 -- 5000 mhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yrs| -- 10 50 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.5 3.0 pF SMALL-SIGNAL CHARACTERISTICS 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 MW 4 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 3 2 10 8 6 4 1 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency 1.2 VGS(off) ^ -1.2 V 1.2 VGS(off) VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) ^ -1.2 V 1.0 - 0.2 V 0.8 0.6 - 0.4 V 0.4 - 0.6 V 0 5 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) Figure 3. Typical Drain Characteristics 0.8 VDS = 15 V 0.6 0.4 0.2 - 0.8 V - 1.0 V 0.2 2 10 Figure 2. Noise Figure versus Source Resistance 1.0 0 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 25 0 - 1.2 - 0.8 - 0.4 VGS, GATE - SOURCE VOLTAGE (VOLTS) 0 Figure 4. Common Source Transfer Characteristics Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5457LT1 TYPICAL CHARACTERISTICS 5 5 4 VGS(off) VGS(off) ^ - 3.5 V 3 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 2 -2 V 1 ^ - 3.5 V 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 5. Typical Drain Characteristics 10 ^ - 5.8 V VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS(off) -1 V 6 -2 V 4 -3 V 2 0 Figure 6. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE - SOURCE VOLTAGE (VOLTS) -4 V VGS(off) ^ - 5.8 V 8 6 VDS = 15 V 4 2 -5 V 0 0 5 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 25 Figure 7. Typical Drain Characteristics 0 -7 -6 -5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS) 0 Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MMBF5457LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5457LT1 PACKAGE DIMENSIONS A L 3 B S 1 V STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE 2 G C D H K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 CASE 318-08 ISSUE AE SOT-23 (TO-236AB) Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MMBF5457LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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