2SJ107
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
Low RDS (ON): RDS (ON) = 40 (typ.)
Small package
Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS 25 V
Gate current IG 10 mA
Drain power dissipation PD 200 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg 55~125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current IGSS VGS = 25 V, VDS = 0 1.0 nA
Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 μA 25 V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0 2.6 20 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 10 V, ID = 0.1 μA 0.2 2.0 V
Forward transfer admittance Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
(Note 2)
12 30 mS
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz 105 pF
Reverse transfer capacitance Crss V
GD = 10 V, ID = 0, f = 1 MHz 32 pF
Drain-source ON resistance RDS (ON) V
DS = 10 mV, VGS = 0 (Note 2) 40 Ω
Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value IDSS = 5 mA
Unit: mm
JEDEC
JEITA
TOSHIBA 2-4E1C
Weight: 0.13 g (typ.)
2SJ107
2007-11-01
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2SJ107
2007-11-01
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2SJ107
2007-11-01
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2SJ107
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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