2SJ107
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Low RDS (ON): RDS (ON) = 40 Ω (typ.)
• Small package
• Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS 25 V
Gate current IG −10 mA
Drain power dissipation PD 200 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current IGSS VGS = 25 V, VDS = 0 ⎯ ⎯ 1.0 nA
Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 μA 25 ⎯ ⎯ V
Drain current
IDSS
(Note 1)
VDS = −10 V, VGS = 0 −2.6 ⎯ −20 mA
Gate-source cut-off voltage VGS (OFF) V
DS = −10 V, ID = −0.1 μA 0.2 ⎯ 2.0 V
Forward transfer admittance ⎪Yfs⎪
VDS = −10 V, VGS = 0, f = 1 kHz
(Note 2)
12 30 ⎯ mS
Input capacitance Ciss V
DS = −10 V, VGS = 0, f = 1 MHz ⎯ 105 ⎯ pF
Reverse transfer capacitance Crss V
GD = 10 V, ID = 0, f = 1 MHz ⎯ 32 ⎯ pF
Drain-source ON resistance RDS (ON) V
DS = −10 mV, VGS = 0 (Note 2) ⎯ 40 ⎯ Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value IDSS = −5 mA
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-4E1C
Weight: 0.13 g (typ.)