To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old company name remains in t his document, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electr onics Corporat ion (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume an y liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
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Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
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does not warrant that such information is error free. Renesas Electronics assumes no liabil ity whatso ever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified acco rding to the following three quality grades: “Standard”, “High Qu ality”, and
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crime systems; safety equipment; and medical equipment not specifically designed for life support.
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systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate and mal functi on s under certai n u se cond itions. Further,
Renesas Electronics pr oducts are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
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(Note 1) “Renesas Electronics” as used in this document means Ren esas E lectro nics Corpor ation and also inclu des its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.2.00 Mar 06, 2007 page 1 of 7
BCR5KM-12LB
Triac
Medium Power Use
REJ03G0317-0200
Rev.2.00
Mar 06, 2007
Features
IT (RMS) : 5 A
VDRM : 600 V
IFGTI , IRGTI, IRGTIII : 20 mA (10 mA)Note5
Viso : 2000 V
The product gua rant ee d maximum junction
temperature 150°C.
Insulated Type
Planar Passivation Type
Refer to the recommended circu it values around the
triac before using.
Outline
2
13
13
2
RENESAS Package code:
PRSS0003AB-A
(Package name:
TO-220FN)
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 5 A
Commercial frequency, sine full wave
360° conduction, Tc = 121°C
Surge on-state current ITSM 50 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 10.4 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3 W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 °C
Storage temperature Tstg – 40 to +150 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM2.0 mA Tj = 150°C, VDRM applied
On-state voltage VTM1.8 V
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Ι V
FGTΙ1.5 V
ΙΙ V
RGTΙ1.5 V
Gate trigger voltageNote2
ΙΙΙ V
RGTΙΙΙ 1.5 V
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
Ι I
FGTΙ 20Note5 mA
ΙΙ I
RGTΙ 20Note5 mA
Gate trigger currentNote2
ΙΙΙ I
RGTΙΙΙ20Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2/0.1 V Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) 3.8 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5/1 V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table below.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.00.5 1.5 2.5 3.51.0 2.0 3.0
10
2
10
1
10
0
10
–1
5
7
2
3
5
7
2
3
5
7
2
3
23 5710
2
10
1
23 5710
3
23 5710
4
5
3
2
5
3
2
7
5
3
2
7
5
7
10
1
10
0
10
–1
10
3
7
5
3
2
7
5
3
2
10
2
10
1
–60 –40–20 0 20 40 60 80 100120 160140
–60 –40–20 0 20 40 60 80 100120 160140
10
3
10
2
10
1
10
0
5
7
2
3
5
7
2
3
5
7
2
3
23 5710
3
23 510
2
23 5710
0
10
–1
23 5710
1
23 5710
2
0
1.5
1.0
0.5
2.5
2.0
4.0
3.5
3.0
Tj = 25°C
Tj = 150°C
Typical Example
V
GM
= 10V
P
GM
= 3W
I
GM
= 2A
V
GT
= 1.5V
I
GT
= 20mA
V
GD
= 0.1V
P
G(AV)
=
0.3W
Typical Example
I
RGT III
I
RGT I
I
FGT I
10
0
10
1
10
2
3725 3725
100
60
40
0
10
20
30
50
70
90
80
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 4 of 7
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
0
3
2
1
5
4
9
8
7
6
10
01234 106578
9
10
3
10
–1
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
23 572 3 57 2 3 5723 57 10
4
102
101105
103
0123456 87
0
20
40
80
60
100
120
140
160
0123456 87
01.51.00.5 2.0 2.5 3.0
0
20
40
80
60
100
120
140
160
0
20
40
80
60
100
120
140
160
10
6
10
2
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
–60 –40–20 0 20 40 60 80 100 120 160140
No Fins
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
60 × 60 × t2.3
100 × 100 × t2.3
120 × 120 × t2.3
360° Conduction
Resistive,
inductive loads
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 5 of 7
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (mA)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
102
7
5
3
2
7
5
3
2
101
100
–60 –40–20 0 20 40 60 80 100120 160140 –60 –40–20 0 20 40 60 80 100120 160140
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
100
V
D
= 12V
0
20
40
80
60
100
120
140
160
–60 –40–20 0 20 40 60 80 100120 160140 23 5710
2
10
1
23 5710
3
23 5710
4
23 5710
2
10
1
23 5710
3
23 5710
4
0
20
40
80
60
100
120
160
140
0
20
40
80
60
100
120
160
140
2
3
5
7
2
3
5
7
7
101
100
100101102
3725 3725
Distribution
Typical Example
Distribution T
2+, G
Typical Example
T2+, G+
T2, GTypical Example
Typical Example Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
Tj = 150°C
I Quadrant
III Quadrant
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 6 of 7
C
1
= 0.1 to 0.47µF
R
1
= 47 to 100
C
0
= 0.1µF
R
0
= 100
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
2
3
5
7
2
3
5
7
7
101
100
100101102
3725 3725
103
7
5
3
2
7
5
3
2
102
101
100101102
3725 3725
330
330
330
C
1
C
0
R
0
R
1
6
6
6V
6V
A
V
A
V
6
6V A
V
Minimum
Characteristics
Value
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
Typical Example
IRGT III
IRGT I
IFGT I
Load
BCR5KM-12LB
Rev.2.00 Mar 06, 2007 page 7 of 7
Package Dimensions
2.0g
MASS[Typ.]
PRSS0003AB-A
RENESAS CodeJEITA Package Code Previous Code Unit: mm
φ3.2 ± 0 . 2
2.8 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
10 ± 0 . 3
1.1 ± 0.2
6.5 ± 0 . 3
3 ± 0.33.6 ± 0 . 3
15 ± 0 . 314 ± 0 . 5
1.1 ± 0.2
4.5 ± 0 . 2
2.6 ± 0 . 2
Package Name
TO-220FN
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Plastic Magazine (Tube) 50 Type name BCR5KM-12LB
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR5KM-12LB-A8
Note : Please confirm the specification about the shipping in detai l.
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
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or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0