AP30T10GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower Gate Charge Fast Switching Characteristic 100V RDS(ON) 55m ID G RoHS Compliant & Halogen-Free BVDSS 19A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G DS TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 19 A ID@TC=100 Continuous Drain Current, V GS @ 10V 12 A 60 A 44.6 W 3.13 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 3 PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 2.8 /W 40 /W 1 201201041 AP30T10GS-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=12A - - 55 m VGS=5V, ID=8A - - 85 m 0.9 - 2.5 V - 14 - S VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA VDS=10V, ID=12A gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=12A - 13.5 21.6 nC Qgs Gate-Source Charge VDS=80V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC td(on) Turn-on Delay Time VDS=50V - 6.5 - ns tr Rise Time ID=12A - 18 - ns td(off) Turn-off Delay Time RG=1 - 20 - ns tf Fall Time VGS=10V - 5 - ns Ciss Input Capacitance VGS=0V - 840 1340 pF Coss Output Capacitance VDS=25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Min. Typ. IS=12A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=12A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 70 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP30T10GS-HF 50 40 10V 7.0V 6.0V 5.0V ID , Drain Current (A) 40 10V 7.0V 6.0V 5.0V T C = 150 o C ID , Drain Current (A) o T C = 25 C 30 V G = 4.0V 20 30 V G = 4.0V 20 10 10 0 0 0 2 4 6 8 0 4 V DS , Drain-to-Source Voltage (V) 8 12 16 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.4 I D =8A I D =12A V G =10V T C =25 o C Normalized RDS(ON) RDS(ON) (m) 2.0 60 1.6 1.2 50 0.8 0.4 40 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 I D =1mA Normalized VGS(th) (V) IS(A) 16 12 T j =150 o C T j =25 o C 8 1.2 0.8 0.4 4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP30T10GS-HF f=1.0MHz 10 1200 I D = 12 A V DS = 50 V V DS = 60 V V DS = 80 V 6 C iss 800 C (pF) VGS , Gate to Source Voltage (V) 1000 8 600 4 400 2 200 0 C oss C rss 0 0 4 8 12 16 20 24 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 Operation in this area limited by RDS(ON) 100us ID (A) 10 1ms 10ms 100ms DC 1 o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 24 VG ID , Drain Current (A) 20 QG 4.5V 16 QGS 12 QGD 8 4 Charge Q 0 25 50 75 100 125 T C , Case Temperature ( 150 o 175 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4