Thyristor/Diode Modules PSKH 80 ITAVM = 80 A
VRRM = 600-1200V
Preliminary Data Sheet
Features
•Isolation voltage 3600 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL registered, E 148688
Applications
•DC motor control
•Light and temperature control
•Softstart AC motor controller
•Solid state switches
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2004 POWERSEM reserves the right to change limits, test conditions and dimensions
VRSM V
RRM Type
VDSM VDRM
(V) (V)
700 600 PSKH 80/06
900 800 PSKH 80/08
1300 1200 PSKH 80/12
Symbol Test Conditions Maximum Ratings
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
ITAVM TC = 85 °C, 180° sine 80 A
ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 550 A
VR = 0 t = 8.3 ms (60 Hz), sine 600 A
TVJ = 125 °C t = 10 ms (50 Hz), sine 500 A
VR = 0 t = 8.3 ms (60 Hz), sine 550 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 1500 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 1490 A²s
TVJ = 125 °C t = 10 ms (50 Hz), sine 1250 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A²s
(di/dt)cr TVJ = 125 °C repetitive, IT = 250 A 150 A/µs
f=50Hz, tP=200µs
VD=2/3VDRM
IG=0.45 A non repetitive,IT = ITAV M 500 A/µs
diG/dt=0.45A/µs
(dv/dt)cr TVJ = 125 °C VD=2/3VDRM 1000 V/µs
RGK= ∞, method 1 (linear voltage rise)
PGM TVJ = 125 °C tP=30µs ≤ 10 W
IT =ITAV M tP=300µs ≤ 5 W
PGAVM 0.5 W
VRGM 10 V
TVJ -40... + 125 °C
TVJM 125 °C
Tstg -40... + 125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V∼
IISOL ≤ 1 mA t = 1 s 3600 V∼
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
Weight typ. 24 g
VX-18
E-3
AC-1GI-10
ECO-PACTM 2
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2004 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Value
ID,IRTVJ = 125°C, VR = VRRM, VD=VDRM ≤ 5 mA
VTIT = 150 A, TVJ = 25 °C ≤ 1.45 V
VTO For power-loss calculations only 0.8 V
rT 2.95 mΩ
VGT VD=6V TVJ= 25°C ≤ 1.5 V
TVJ=-40°C ≤ 1.6 V
IGT VD=6V TVJ= 25°C ≤ 150 mA
TVJ=-40°C ≤ 200 mA
VGD TVJ= 125°C VD=2/3VDRM ≤ 0.2 V
IGD TVJ= 125°C VD=2/3VDRM ≤ 10 mA
ILTVJ= 25°C, tP=10µs ≤ 450 mA
IG=0.45A, diG/dt=0.45A/µs
IHTVJ= 25°C, VD=6V, RGK= ∞≤ 200 mA
tgd TVJ= 25°C, VD=1/2VDRM ≤ 2 µs
IG=0.45A, diG/dt=0.45A/µs
RthJC per thyristor; DC 0.36 K/W
per module 0.18 K/W
RthJK per thyristor; sine 180° el 0.56 K/W
per module 0.28 K/W
dsCreeping distance on surface 11.2 mm
dACreeping distance in air 5.0 mm
aMax. allowable acceleration 50 m/s²
Fast Recovery Epitaxial Diode (FRED)
Symbol Conditions Maximum Ratings
IFTC = 85°C 85 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 100 A; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 1.7 V
IRM IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C 79 A
trr VR = 600 V; VGE = 0 V 220 ns
RthJC 0.45 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.9 K/W
Thyristor
Package style and outline
Dimensions in mm (1mm = 0.0394“)
