2MBI450VN-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) Conditions Inverter Items Collector-Emitter voltage Gate-Emitter voltage Continuous 1ms Tc=80C Tc=80C 1ms 1 device AC : 1min. Maximum ratings 1200 20 450 900 450 900 2270 175 150 125 -40 to +125 Units V V 2500 VAC 3.5 4.5 Nm A W C Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = 20V VCE = 20V, I C = 450mA VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) VGE = 15V I C = 450A VCE = 10V, VGE = 0V, f = 1MHz Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCC = 600V I C = 450A VGE = 15V RG = 0.52 VGE = 0V I F = 450A Reverse recovery time trr Resistance R B value B I F = 450A T=25C T=100C T=25/50C Symbols Conditions Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.35 2.80 2.65 2.70 1.75 2.20 2.05 2.10 41 550 1200 180 600 120 1050 2000 110 350 2.30 2.75 2.45 2.40 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF nsec V nsec K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Inverter IGBT Inverter FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.066 0.100 0.0167 - Units C/W 2MBI450VN-120-50 IGBT Modules Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150C / chip 1000 1000 Vge=20V 15V Collector current: Ic [A] 800 Collector current: Ic [A] 12V 600 10V 400 200 Vge= 20V 15V 12V 800 600 10V 400 200 8V 8V 0 0 0 1 2 4 0 5 2 3 4 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25C / chip 10 800 Collector-Emitter Voltage: Vce [V] Tj=25C 125C 150C 600 400 200 0 8 6 4 Ic=900A Ic=450A Ic=225A 2 0 0 1 2 3 4 5 5 15 20 Gate-Emitter Voltage: Vge [V] [INVERTER] [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25C 100 Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] 1000 Cies 10 Cres Coes 1 0 10 Collector-Emitter Voltage: Vce [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, = 1MHz, Tj= 25C Gate Capacitance: Cies, Coes, Cres [nF] 1 Collector-Emitter voltage: Vce [V] 1000 Collector Current: Ic [A] 3 5 10 15 20 25 30 Vge Vce 0 1000 2000 3000 4000 Gate charge: Qg [nC] Collector-Emitter voltage: Vce [V] 2 25 5000 6000 2MBI450VN-120-50 IGBT Modules [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=15V, Rg=0.52, Tj=125C, 150C [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=15V, Rg=0.52, Tj=25C toff 1000 ton tr 100 tf 10 0 200 400 600 800 Tj=125oC Tj=150oC toff 1000 ton tr tf 100 10 1000 0 400 600 800 1000 Collector current: Ic [A] [INVERTER] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=15V, Tj=125C, 150C Switching loss vs. Collector current (typ.) Vcc=600, Vge=15V, Rg=0.52, Tj=125C, 150C toff ton Tj=125oC Tj=150oC tr 1000 tf 100 10 0.1 1 10 150 Tj=125oC Tj=150oC Eoff 100 Err 50 Eon 0 100 0 200 400 600 800 1000 Collector current: Ic [A] Gate resistance: Rg [] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=15V, Tj=125C, 150C [INVERTER] Reverse bias safe operating area (max.) +Vge=15V, -Vge=15V, Rg=0.52, Tj=150C 1400 250 Tj=125oC Tj=150oC 200 1200 Eon Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 200 Collector current: Ic [A] 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] 10000 150 100 Eoff 50 1000 800 600 400 200 Err 0 0 0 1 10 100 0 Gate resistance: Rg [] 500 1000 Collector-Emitter voltage: Vce [V] 3 1500 2MBI450VN-120-50 IGBT Modules [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=15V, Rg=0.52, Tj=25C [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 10000 800 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Forward current: If [A] 1000 Tj=25C 600 400 125C 200 150C 0 1000 Irr trr 100 10 0 1 2 3 0 Forward on voltage: Vf [V] 600 800 1000 Transient Thermal Resistance (max.) 1 Thermal resistanse: Rth(j-c) [C/W] *** 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 400 Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=15V, Rg=0.52, Tj=125C, 150C Tj=125oC Tj=150oC 1000 Irr trr 100 10 0 200 400 600 800 [THERMISTOR] 100 10 1 0.1 0 20 40 60 IGBT 0.01 0.01 0.1 Pulse Width : Pw [sec] Temperature characteristic (typ.) -60 -40 -20 FWD 0.1 0.001 0.001 1000 Forward current: If [A] Resistance : R [k] 200 80 100 120 140 160 Temperature [C] 4 1 2MBI450VN-120-50 IGBT Modules N OUT P Outline Drawings, mm Equivalent Circuit Schematic [ Thermistor ] [ Inverter ] C P T1 T2 G1 E1 OUT G2 E2 N 5 2MBI450VN-120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6 http://store.iiic.cc/