ESD7002WTT1G/BKN - ON Semiconductor

July, 2017 − Rev. 4 1Publication Order Number:

ESD7002/D

ESD7002, SZESD7002

ESD Protection Diode

Low Capacitance ESD Protection Diode

for High Speed Data Line

The ESD7002 surge protection device is designed to protect high

speed data lines from ESD. Ultra−low capacitance and low ESD

clamping voltage make this device an ideal solution for protecting

voltage sensitive high speed data lines. The flow−through style

package allows for easy PCB layout and matched trace lengths

necessary to maintain consistent impedance between high speed

differential lines such as USB 3.0 and HDMI.

Features

•Low Capacitance (0.3 pF Typical, I/O to GND)

•Diode capacitance matching

•Protection for the Following IEC Standards:

•IEC 61000−4−2 (Level 4)

•Low ESD Clamping Voltage

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Typical Applications

•USB2.0/3.0

•LVDS

•HDMI

•High Speed Differential Pairs

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Operating Junction Temperature Range TJ−55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Lead Solder Temperature −

Maximum (10 Seconds) TL260 °C

IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD) ESD

ESD ±8

±15 kV

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

MARKING

DIAGRAM

SC−70

CASE 419

STYLE 4

PIN CONFIGURATION

AND SCHEMATIC

www.onsemi.com

(Note: Microdot may be in either location)

Pin 1 Pin 2

Pin 3

72 MG

72 = Specific Device Code

M = Date Code

G= Pb−Free Package

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

ESD7002, SZESD7002

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working

Voltage VRWM I/O Pin to GND 16 V

Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND 16.5 23 V

Reverse Leakage

Current IRVRWM = 5 V, I/O Pin to GND 1mA

Clamping Voltage

(Note 1) VCIEC61000−4−2, ±8 kV Contact See Figures 3 and 4

Clamping Voltage TLP

(Note 2) VCIPP = 8 A

IPP = 16 A

IPP = −8 A

IPP = −16 A

31.2

33.9

−5.5

−10.8

Junction Capacitance

Match DCJVR = 0 V, f = 1 MHz between I/O1 to GND and I/O

2 to GND 5 10 %

Junction Capacitance CJVR = 0 V, f = 1 MHz between I/O Pins 0.2 0.4 pF

Junction Capacitance CJVR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.5 pF

3dB Bandwidth fBW RL = 50 W5 GHz

1. For test procedure see Figures 5 and 6 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

1.0

Figure 1. Typical IV Characteristic Curve Figure 2. Typical CV Characteristic Curve

1E−02

VOLTAGE (V) VBias (V)

CURRENT (A)

CAPACITANCE (pF)

1E−03

1E−04

1E−05

1E−06

1E−07

1E−08

1E−09

1E−10

1E−11

1E−12

1E−13 468101214 2422201816

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Figure 3. IEC61000−4−2 +8 kV Contact ESD

Clamping Voltage

−50

150

TIME (ns)

VOLTAGE (V)

140

130

120

110

100

−10 50 100 150 200 400250 300 350

Figure 4. IEC61000−4−2 −8 kV Contact ESD

Clamping Voltage

−20

TIME (ns)

VOLTAGE (V)

0 20 40 80 120 20

140 160 180

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

−110

−120

−130

−140

−150 10060

02468101214

ESD7002, SZESD7002

www.onsemi.com

IEC 61000−4−2 Spec.

Level Test Volt-

age (kV)

First Peak

Current

(A) Current at

30 ns (A) Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

Ipeak

90%

10%

IEC61000−4−2 W aveform

100%

I @ 30 ns

I @ 60 ns

tP = 0.7 ns to 1 ns

Figure 5. IEC61000−4−2 Spec

Figure 6. Diagram of ESD Clamping Voltage Test Setup

50 W

Cable

DUT Oscilloscope

ESD Gun

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

ESD7002, SZESD7002

www.onsemi.com

Figure 7. Positive TLP IV Curve Figure 8. Negative TLP IV Curve

CURRENT (A)

VOLTAGE (V)

040353051015 2520

CURRENT (A)

VOLTAGE (V)

0 −14−2 −4 −6 −8 −12−10

−18

−16

−14

−12

−10

−8

−6

−4

−2

NOTE: TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns.

Transmission Line Pulse (TLP) Measurement

Transmission Line Pulse (TLP) provides current versus

voltage (I−V) curves in which each data point is obtained

from a 100 ns long rectangular pulse from a charged

transmission line. A simplified schematic of a typical TLP

system is shown in Figure 9. TLP I−V curves of ESD

protection devices accurately demonstrate the product’s

ESD capability because the 10s of amps current levels and

under 100 ns time scale match those of an ESD event. This

is illustrated in Figure 10 where an 8 kV IEC 61000−4−2

current waveform is compared with TLP current pulses at

8 A and 16 A. A TLP I−V curve shows the voltage at which

the device turns on as well as how well the device clamps

voltage over a range of current levels.

Figure 9. Simplified Schematic of a Typical TLP

System

DUT

LS÷

Oscilloscope

Attenuator

10 MW

50 W Coax

Cable

50 W Coax

Cable

Figure 10. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms

ESD7002, SZESD7002

www.onsemi.com

With ESD7002Without ESD7002

Figure 11. USB3.0 Eye Diagram with and without ESD7002 at 5 Gb/s

Figure 12. Typical Insertion Loss

0.5

−0.5

−1

−1.5

−2

−2.5

−3

−3.5

−4

1.E+06 1.E+07 1.E+08 1.E+09

FREQUENCY (Hz)

S21 (dB)

ORDERING INFORMATION

Device Package Shipping†

ESD7002WTT1G SC−70

(Pb−Free) 3000 / Tape & Reel

SZESD7002WTT1G* SC−70

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP

Capable.

ESD7002, SZESD7002

www.onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

AA2

De1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

L2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

ESD7002/D

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer ’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body . Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

◊