R08DS0071EJ0600 Rev.6.00 Page 1 of 12
Jan 9, 2013
PIN CONNECTION
(Top View)
1. Anode
2. Cathode
3. Emitter
4. Collector
43
12
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Data Sheet
PS2701A-1
HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER
DESCRIPTION
The PS2701A-1 is an opticall y coupled isolator containing a GaAs light emitting d iode and an NPN silicon
phototransistor to realize an excellent cost performance.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient ligh t.
It is designed for high density mounting applications.
FEATURES
High isolati on vol t a ge (BV = 3 750 Vr.m.s.)
SOP (Small Outline Package) type
Ordering number of taping product : PS2 70 1 A- 1- F3: 3 5 00 pcs/ reel
Pb-Free product
Safety standards
UL approved: No. E72422
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 6095 0)
BSI approved (BS EN 60065 , BS EN 60950)
SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN 60950)
DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
Hybrid IC
Measuring instruments
Power supply
Programmable logic controllers
R08DS0071EJ0600
Rev.6.00
Jan 9, 2013
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 2 of 12
Jan 9, 2013
PACKAGE DIMENSIONS (UNIT: mm)
4.0±0.5
7.0±0.3
4.4
0.5±0.3
0.15
+0.10
–0.05
2.0
0.1±0.1
2.1±0.2
2.54
0.4
+0.10
–0.05
0.25 M
12
43
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 5 mm
Outer Creepage Distance 5 mm
Inner Creepage Distance 2.5 mm
Isolation Distance 0.3 mm
PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 3 of 12
Jan 9, 2013
MARKING EXAMPLE
N
3 01
CTR Rank Code
Year Assembled
(Last 1 Digit)
Week Assembled
R
701A
N301
No. 1 pin Mark
*2
*1
Remark "PS2" and "-1" are omitted from original type number
Trade Mark
Type Number
Assembly Lot
Note: Bar indication cont ents of *1 and *2.
Made in Taiwan
R
701A
N301
*1: No indication
*2: No indication
*1: No indication
*2: " " (Vertical bar)
" " (Vertical bar)
:Made in Japan
Made in Japan
R
701A
N301
Made in Taiwan
Halogen free
R
701A
N301
" " (Horizontal bar)
:Made in Taiwan & Halogen free
*1: " " (Horizontal bar)
*2: No indication
*1: No indication
*2: " " (Horizontal bar)
Made in Japan
Halogen free
R
701A
N301
" " (Horizontal bar)
:Made in Japan & Halogen free
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 4 of 12
Jan 9, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application
Part Number*1
PS2701A-1-F3 PS2701A-1-F3-A Embossed Tape
3 500 pcs/reel Standard products
(UL, CSA, BSI,
SEMKO, NEMKO,
DEMKO, FIMKO
approved)
PS2701A-1-V-F3 PS2701A-1-V-F3-A
Pb-Free
Embossed Tape
3 500 pcs/reel DIN EN 60747-5-5
(VDE0884-5)
Approved (Option)
PS2701A-1
PS2701A-1-F3 PS2701A-1Y-F3-A Embossed Tape
3 500 pcs/reel Standard products
(UL, CSA, BSI,
SEMKO, NEMKO,
DEMKO, FIMKO
approved)
PS2701A-1-V-F3 PS2701A-1Y-V-F3-A
Special version
(Pb-Free and
Halogen Free)
Embossed Tape
3 500 pcs/reel DIN EN 60747-5-5
(VDE0884-5)
Approved (Option)
PS2701A-1
Note: *1. For the application of the Safet y Standard, following part number sho uld b e used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
Δ
PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current*1 IFP 0.5 A
Transistor Collector to Emitter Voltage VCEO 70 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC 30 mA
Power Dissipation Derating
Δ
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage*2 BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
Note: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% bet ween in put and output.
Pins 1-2 shorted together, 3-4 shorted together.
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 5 of 12
Jan 9, 2013
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF I
F = 5 mA 1.2 1.4 V
Reverse Current IR V
R = 5 V 5
μ
A
Terminal
Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF
Transistor Collector to Emitter
Dark Current ICEO I
F = 0 mA, VCE = 70 V 100 nA
Coupled Current Transfer
Ratio (IC/IF)*1 CTR IF = 5 mA, VCE = 5 V 50 300 %
Collector Saturation
Voltage VCE (sat) I
F = 10 mA, IC = 2 mA 0.13 0.3 V
Isolation Resistance RI-O V
I-O = 1.0 kVDC 1011 Ω
Isolation
Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF
Rise Time*2 t
r V
CC = 5 V, IC = 2 mA, RL = 100 Ω 5
μ
s
Fall Time*2 t
f 7
Turn-on Time*2 t
on 8
Turn-off Time*2 t
off 10
Note: *1. CTR rank
N: 50 to 300 (%)
P: 150 to 300 (%)
L: 100 to 300 (%)
M: 50 to 150 (%)
*2. Test Circuit for Switching Time
PW = 100 s,
Duty cycle = 1/10
μ
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 6 of 12
Jan 9, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
80
60
40
20
0
200
150
100
50
0
0 25 50 75 100 125 0 25 50 75 100 125
30
25
20
15
10
5
00246810
100
50
10
5
1
0.5
0.1
0.05 1.51.41.31.21.11.00.90.80.7
0.8 mW/°C1.5 mW/°C
I
F
= 10 mA
5 mA
2 mA
1 mA
0
°
C
–25
°
C
–55
°
C
+60
°
C
+25
°
C
T
A
= +100
°
C
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 000
1 000
100
10
1
0 25 50 75 100
V
CE
= 24 V
V
CE
= 70 V
10
1
0.1 0 0.2 0.4 0.6 0.8 1.0
5 mA
2 mA
1 mA
I
F
= 10 mA
Remark The graphs indicate nominal characteristics.
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 7 of 12
Jan 9, 2013
1.2
1.0
0.8
0.6
0.4
0.2
0
50
–7
5
25 025 7550 100
300
250
200
150
100
50
0
0.01 0.1 1 10 100
100
10
1
0.1
1 000
100
10
1
10 100 1 000 10 000
t
f
t
r
t
d
t
s
IC = 2 mA, VCC = 5 V,
CTR = 236%
1 10 100
td
ts
t
f
IF = 5 mA, VCC = 5 V,
CTR = 236%
RL = 1 kΩ
300 Ω
100 Ω
IF = 5 mA,
VCE = 5 V
5
0
5
10
15
20
25
0.1 1 10 100 1 000
300%
90%
VCE = 5 V,
n = 3
t
r
Ambient Temperature TA (°C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
Forward Current IF (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Sample A
B
C
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Load Resistance RL (kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Frequency f (kHz)
Normalized Gain GV
FREQUENCY RESPONSE
Remark The graphs indicate nominal characteristics.
PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 8 of 12
Jan 9, 2013
TAPING SPECIFICATIONS (UNIT: mm)
Tape Direction
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
11.9 to 15.4
Outer edge of
flange
17.5±1.0
13.5±1.0
13.0±0.2
φ
PS2701A-1-F3
1.55±0.1
2.0±0.05
4.0±0.1
1.75±0.1
4.6±0.1
2.9 MAX.
0.3
8.0±0.1
Outline and Dimensions (Tape)
2.4±0.1
1.5
+0.1
–0
7.4±0.1
5.5±0.05
12.0±0.2
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 9 of 12
Jan 9, 2013
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
Time of peak reflo w temperature 10 seconds or less
Time of temperature higher than 220°C 60 seconds or less
Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
Peak Temperature (lead part temperature) 350°C or below
Time (each pin) 3 seconds or less
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlori ne co nt ent of 0.2 Wt% is recomme nded .)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 10 of 12
Jan 9, 2013
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below
IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like
into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 11 of 12
Jan 9, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21
Dielectric strength
maximum operating isolati on voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 × UIORM, Pd < 5 pC
UIORM
Upr
707
1 131
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devic es)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 325 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0 110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
150
300
500
109
°C
mA
mW
Ω
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PS2701A-1
R08DS0071EJ0600 Rev.6.00 Page 12 of 12
Jan 9, 2013
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
All trademarks and registered trademarks are t he property of their respective owners.
C - 1
Revision History PS2701A-1 Data Sheet
Description
Rev. Date Page Summary
1.00 May 20, 2004 This data sheet was released as PN10396EJ01V0DS
6.00 Jan 9, 2013 Thoughout Renesas format is applied to this data sh eet.
p.1 The safety standards are revised.
p.3 The explanation in MARKING EXAMPLE is revised.
p.4
ORDERING INFORMATION is modified with the revision of the safety
standards.
The value in Ratings of Parameter “Forward Current (DC)” is changed from 30
to 50.
p.5
Turn-on Time (ton) and Turn-off Time(toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
p.7
The graph of LONG TERM CTR DEGRADATION is deleted from those in
TYPICAL CHARACTERISTICS.
p.8
PS2701A-1-F4 is deleted form Tape Direction ima ge in TAPING
SPECIFICATIONS.
p.11
The value in SPECIFICAT ION OF VDE MARKS LICENSE DOCUMENT is
changed as follows.
-- Test voltage is changed from the factor, 1.5, and the value, 1 060, to 1.6 and
1 131, respectively.
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
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third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
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(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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