T4-LDS-0211, Rev. 1 (111900) ©2011 Microsemi Corporation Page 1 of 5
1N5802, 1N5804, 1N5806
Available on
commercial
versions
VOIDLESS HERM E TICALLY SEAL E D ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
Quali f i ed Levels:
JAN, JAN TX,
JANTX V a n d JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recogni zed 2.5 amp rated re c tifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
leaded and surface mount MELF package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“A” Package
Also available in:
“A” (D-5A) MELF
Package
(s urf ace mount )
1N5802, 04, 06US & URS
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5802, 1N5804, 1N5806 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust c onstruction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are avail ble per MIL-PRF-19500/477.
• RoHS compliant versions available (commercial grade only).
APPLICAT IONS / BENE FITS
• Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability appl icati ons.
• Switch ing po wer supplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ T
A
= 25oC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (L = .375 in)
see Figure 1
RӨJL 36
o
C/W
Working Peak Reverse Voltage:
1N5802
1N5804
1N5806
VRWM
50
100
150
V
Forward Surge Current (3)
IFSM
35
A
Average Rectified Output Current
@ TL = +75
o
C at 3/8 inch lead length
(1)
IO1 2.5 A
Average Rectified Output-Current
@ TA = +55
o
C at 3/8 inch lead length
(2)
IO2 1.0 A
Capacitance
@ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
C 25 pF
Reverse Recovery Tim e (4)
trr
25
ns
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. IO1 is rated at 2.5 A @ TL = 75 oC at 3/8 inch l ead length. Derate at 25 m A/oC for TL above 75 oC.
2. IO2 is rated at 1.0 A @ TA = 55 oC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled (RӨJX < 154 oC/W) where TJ(max) 175 oC is not exceeded. Derate at 8.33
mA/oC for TA above 55 oC.
3. TA = 25 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute interval s.
4. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A.
T4-LDS-0211, Rev. 1 (111900) ©2011 Microsemi Corporation Page 2 of 5
1N5802, 1N5804, 1N5806
• CASE: Hermetically sealed voidless hard glass with tung sten slug s.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate ov er copper.
• MARKING: Body coated in blue with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 340 milligrams.
• See Package Dimensions on last page.
JAN 1N5802 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(See Electrical Characteristics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maxim um peak voltage that can be applied over the operating tem perature
range.
IO
Average Rectified Output Current: Output current averaged o ver a full cycle with a 50 Hz or 60 Hz sine-w ave input and
a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Tim e: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
BREAKDOWN
VOLTAGE
(MIN.)
@ 100 µA
V
(BR)
MAXIMUM FORWARD
VOLTAGE
@ 8.3 ms pulse
VFM
REVERSE
CURRENT
(MAX.)
@ VRWM
I
R
SURGE
CURRENT
(MAX)
IFSM
(Note 1)
REVERSE
RECOVERY
TIME (MAX)
trr
(Note 2)
THERMAL
IMPEDANCE
@ tH = 10 ms
ZӨJX
(Note 3)
TYPE
Volts
Volts
µA
Amps ns oC/W
I
F
= 1.0 A
I
F
= 2.5 A
25 oC
125 oC
1N5802
60
0.875
0.975
1
175
35
25
4.0
1N5804
110
0.875
0.975
1
175
35
25
4.0
1N5806
160
0.875
0.975
1
175
35
25
4.0
NOTES: 1. TA = 2.5 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute in terval s (IFSM s urg e is al so a maxim um rati ng) .
2. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A (trr reverse recovery time is also a maximum rating).
3. For th e complete thermal impedance curve over a broad range of heating times, see Figure 1.
T4-LDS-0211, Rev. 1 (111900) ©2011 Microsemi Corporation Page 3 of 5
1N5802, 1N5804, 1N5806
Heating Time (sec)
FIGURE 1
Max i mum Th er mal Imped anc e
IO (A)
FIGURE 2
Rectifier Power vs IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
T4-LDS-0211, Rev. 1 (111900) ©2011 Microsemi Corporation Page 4 of 5
1N5802, 1N5804, 1N5806
P ad Area (sq in)
FIGURE 3
Thermal Resis t anc e vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) w ith 1, 2, and 3 oz copper
VF (V)
FIGURE 4
Forward Volt age vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0211, Rev. 1 (111900) ©2011 Microsemi Corporation Page 5 of 5
1N5802, 1N5804, 1N5806
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BL shall include the entire body including slugs and
sections of the l ead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the
diode body and extending .050 inc h (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.065
.085
1.65
2.16
4
BL
.125
.250
3.18
6.35
3
LD
.027
.032
0.69
0.81
3
LL
.700
1.30
17.78
33.02