DATA SHEET
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this is the latest version.
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representative for availability and additional information.
PHOTOCOUPLER
PS2532-1,-2,-4,PS2532L-1,-2,-4
HIGH COLLECTOR TO EMITTER VOLTATGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SIRIES −NEPOC Series−
The mark •
••
• shows major revised poi nts.
Document No. PN10232EJ01V0DS (1st edition)
(Previous No. P11434EJ6V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1990, 2003
DESCRIPTION
The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2532-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2532L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• High collector to emitter voltage (VCEO = 300 V)
• High Isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 4 000 % TYP.)
• High-speed switching (tr, tf = 100
µ
s TYP.)
• Ordering number of tape product: PS2532L-1-E3, E4, F3, F4, PS2532L-2-E3, E4
• Safety standards
• UL approved: File No. E72422 (S)
• BSI approved: No. 8221/8222
• CSA approved: No. CA 101391
• NEMKO approved: No. P98101708
• SEMKO approved: No. 9824187/01-02
• DEMKO approved: No. 307863
• FIMKO approved: No. F1 11397
• VDE0884 approved (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
Data Sheet PN10232EJ01V0DS
2
PS2532-1,-2,-4,PS2532L-1,-2,-4
PACKAGE DIMENSIONS (Unit : mm)
DIP Type (New package)
PS2532-1TOP VIEW
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Caution New package 1-ch only
DIP Type
PS2532-4
PS2532-1TOP VIEW
TOP VIEW
9.7±0.5
6.5±0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
PS2532-2
4.6±0.5
6.5±0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
19.8±0.5
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
TOP VIEW
12
43
12345678
16 15 14 13 12 11 10 9
1234
8765 1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1. Anode
2. Cathode
3. Emitter
4. Collector
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet PN10232EJ01V0DS 3
PS2532-1,-2,-4,PS2532L-1,-2,-4
Lead Bending Type (New package)
PS2532L-1
TOP VIEW
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25+0.1
–0.05
0.1+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Caution New package 1-ch only
Lead Bending Type
PS2532L-2
TOP VIEW
PS2532L-1
TOP VIEW
PS2532L-4 TOP VIEW
4.6±0.5
6.5±0.5
0.25
M
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
9.7±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
0.15
3.5±0.3
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
19.8±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
3.5±0.3
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
12345678
16 15 14 13 12 11 10 9
1234
87651, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1. Anode
2. Cathode
3. Emitter
4. Collector
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet PN10232EJ01V0DS
4
PS2532-1,-2,-4,PS2532L-1,-2,-4
MARKING EXAMPLE
2532
M 003 PS2532-2
M 003
E
F
PS2532-1 PS2532-2, -4
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
No. 1 pin
Mark
M
F
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
003
M003
Blank Blank
Country Assembled
Type Number
Assembly Lot
Data Sheet PN10232EJ01V0DS 5
PS2532-1,-2,-4,PS2532L-1,-2,-4
ORDERING INFORMATION
Part Number Package Packi ng Styl e Safety Standard
Approval Appl i cation P art
Number*1
PS2532-1 4-pin DIP Magazine c ase 100 pcs Standard products PS2532-1
PS2532L-1 (UL, CSA, BSI,
PS2532L-1-E3 Embossed Tape 1 000 pcs/reel NEMKO, SEMKO ,
PS2532L-1-E4 DEMKO, FIMKO
PS2532L-1-F3 Embossed Tape 2 000 pcs/reel approved)
PS2532L-1-F4
PS2532-2 8-pin DIP Magazine c ase 45 pcs PS2532-2
PS2532L-2
PS2532L-2-E3 Embossed Tape 1 000 pcs/reel
PS2532L-2-E4
PS2532-4 16-pin DIP Magazine c ase 20 pcs PS2532-4
PS2532L-4
PS2532-1-V 4-pin DIP Magazine c ase 100 pcs VDE0884 approved PS2532-1
PS2532L-1-V products (Opt i on)
PS2532L-1-V-E 3 Embossed Tape 1 000 pcs/reel
PS2532L-1-V-E4
PS2532L-1-V-F3 Embossed Tape 2 000 pcs/reel
PS2532L-1-V-F4
PS2532L-2-V 8-pin DIP Magazine c ase 45 pcs PS2532-2
PS2532L-2-V
PS2532L-2-V-E 3 Embossed Tape 1 000 pcs/reel
PS2532L-2-V-E4
PS2532-4-V 16-pin DIP Magazine c ase 20 pcs PS2532-4
PS2532L-4-V
*1 For the application of the Safety Standard, following part number should be used.
Data Sheet PN10232EJ01V0DS
6
PS2532-1,-2,-4,PS2532L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Ratings
Parameter Symbol PS2532-1,
PS2532L-1 PS2532-2, -4,
PS2532L-2, -4 Unit
Diode Forward Current (DC) IF80 mA
Reverse Vol tage VR6V
Power Dissipati on Derating
∆
PD/°C1.5 1.2mW
°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current *1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 300 V
Emitter to Collector Voltage VECO 0.6 V
Collector Current IC150 mA/ch
Power Dissipati on Derating
∆
PC/°C 3.0 2.4 mW/°C
Power Dissipati on PC300 240 mW/ch
Isolat i on Voltage*2 B V 5 000 Vr.m. s .
Operating Am bi ent Tem perature TA−55 to +100 °C
Storage Temperat ure Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet PN10232EJ01V0DS 7
PS2532-1,-2,-4,PS2532L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 10 mA 1.15 1.40 V
Reverse Current IRVR = 5 V 5
µ
A
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 30 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 300 V, I F = 0 m A 400 nA
Coupled Current Transf er Ratio
(IC/IF)CTR IF = 1 mA, VCE = 2 V 1 500 4 000 6 500 %
Collector Saturation
Voltage VCE(sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolat i on Resist ance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolat i on Capacitanc e CI-O V = 0 V, f = 1. 0 M Hz 0.6 pF
Rise Time *1 trVCC = 5 V, I C = 10 m A , RL = 100 Ω100
µ
s
Fall Time *1 tf100
*1 Test circuit for switching time
(PW = 1 ms,
Duty cycle = 1/10)
Pulse input VCC
VOUT
RL = 100 Ω50 Ω
IF
Data Sheet PN10232EJ01V0DS
8
PS2532-1,-2,-4,PS2532L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
400
300
200
100
0 25 50 75 100 125 150
PS2532-1
PS2532L-1
3.0 mW/˚C
PS2532-2, -4
PS2532L-2, -4
2.4 mW/˚C
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
150
100
50
0 25 50 75 100 125 150
PS2532-1
PS2532L-1
1.5 mW/˚C
PS2532-2, -4
PS2532L-2, -4
1.2 mW/˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
160
140
120
100
80
60
40
20
021 3456 87
I
F
= 0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
3.0 mA
3.5 mA
4.0 mA
5.0 mA
4.5 mA
V
CE
= 300 V
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(A)
–50 –25 0 25 50 75 100
100 n
10 n
1 n
100 p
10
µ
1
µ
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
500
100
10
50
1
5
0.1
0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
= 5.0 mA
2.0 mA
1.0 mA
0.5 mA
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
Data Sheet PN10232EJ01V0DS 9
PS2532-1,-2,-4,PS2532L-1,-2,-4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
1.2
0.8
0.4
0.0
1.0
0.6
0.2
–50 –25 25 50 75 1000
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
500
100
50
10
1
5
20 100 200 500 1 k 2 k50
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
V
CC
= 10 V,
I
C
= 10 mA t
r
t
d
t
s
t
f
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
5 000
4 000
3 000
1 000
0
2 000
15100.1 0.5 15
V
CE
= 2 V
Sample A
B
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
1.2
1.0
0.8
0.6
0.4
0.2
0.010 10
2
10
3
10
4
10
5
10
6
I
F
= 1 mA,
T
A
= 25 ˚C
I
F
= 1 mA,
T
A
= 60 ˚C
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
–10
–5
–15
–20
–25
–30
0.01 0.1 1 10 100
R
L
= 1 kΩ10 Ω
100 Ω
V
CE
= 4 V, V
in
= 0.1 V
p-p
1 kΩ
1
F
µ
R
L
V
in
V
out
47 Ω
Remark The graphs indicate nominal characteristics.
Data Sheet PN10232EJ01V0DS
10
PS2532-1,-2,-4,PS2532L-1,-2,-4
TAPING SPECIFICATIONS (Unit : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2532L-1-E3 PS2532L-1-E4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
254±2.0
80.0±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10232EJ01V0DS 11
PS2532-1,-2,-4,PS2532L-1,-2,-4
Tape Direction
PS2532L-1-F3 PS2532L-1-F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
Outline and Dimensitons (Reel)
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10232EJ01V0DS
12
PS2532-1,-2,-4,PS2532L-1,-2,-4
Tape Direction
PS2532L-2-E3 PS2532L-2-E4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
10.4±0.1
12.0±0.1
Outline and dimensions (Reel)
Packing: 1 000 pcs/reel
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
1.5
+0.1
–0
7.5±0.1
10.3±0.1
16.0±0.3
4.0±0.1
0.3
15.9 to 19.4
Outer edge of
flange
17.5±1.0
21.5±1.0
Data Sheet PN10232EJ01V0DS 13
PS2532-1,-2,-4,PS2532L-1,-2,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
Data Sheet PN10232EJ01V0DS
14
PS2532-1,-2,-4,PS2532L-1,-2,-4
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10232EJ01V0DS 15
PS2532-1,-2,-4,PS2532L-1,-2,-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Applic at i on class i ficat i on (DIN VDE 0109)
for rated li ne v ol tages ≤ 300 Vr. m.s.
for rated li ne v ol tages ≤ 600 Vr. m.s. IV
III
Climati c test clas s (DIN IE C 68 Tei l 1/09.80) 55/100/21
Dielect ri c strength
maximum operating isolation voltage
Test v ol t age (partial dis charge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
890
1 068 Vpeak
Vpeak
Test v ol t age (partial dis charge test, procedure b for all devi ces test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak
Highest perm i ssible overvolt age UTR 6 000 Vpeak
Degree of pollut i on (DI N V DE 0109) 2
Clearance dis tance > 7.0 mm
Creepage distance > 7.0 mm
Comparativ e tracki ng i ndex (DIN IE C 112/ VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage tem perature range Tstg −55 to +150 °C
Operating tem perat ure range TA–55 to +100 °C
Isolat i on resist ance, mi ni m um value
VIO = 500 V dc at T A = 25 °C
VIO = 500 V dc at T A M AX. at l east 100 °CRis MIN.
Ris MIN. 1012
1011 Ω
Ω
Safety maxi m um ratings (maximum perm i ssibl e i n c ase of faul t, see thermal
derating curve)
Package temperature
Current (input c urrent IF, Psi = 0)
Power (output or total power dissipat i on)
Isolat i on resist ance
VIO = 500 V dc at T A = 175 °C (T si)
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
Data Sheet PN10232EJ01V0DS
16
PS2532-1,-2,-4,PS2532L-1,-2,-4
APPLICATION FOR TELEPHONE (EXAMPLE)
LINE
Bell Ringing Signal
(75 Vr.m.s., 16 Hz) PS2505/PS2506
PS2705/PS2707
PS2805
etc. Bell Ringing Detect V
CC
V
CC
Line Observe
Dial Pulse PS2532/PS2533
Generator PS2732/PS2733
PS2832/PS2833
PS2521
PS2525
Dialer Circuit
IN
OUT
CPU
OCMOS FET
PS7xxx
Speech Circuit
Data Sheet PN10232EJ01V0DS 17
PS2532-1,-2,-4,PS2532L-1,-2,-4
M8E 00. 4 - 0110
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
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support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
For further information, please contact
PS2532-1,-2,-4,PS2532L-1,-2,-4
SAFETY INFORMATION ON THIS PRODUCT
Caution GaAs Products The product contains gallium arsenide, GaA s.
GaAs vapor and powder are hazardous to human health if inhaled or inges ted.
• Do not destroy or burn the product.
• Do not cut or cleave of f any part of the product .
• Do not crush or chemic al l y di ssolve the product .
• Do not put the product in t he m outh.
Follow related l aws and ordinances for dispos al . The product should be exc l uded from general
industri al was te or household garbage.
