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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product data sheet Supersedes data of 2003 Aug 05 2005 May 23 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode PESDxL2UM series FEATURES DESCRIPTION * Uni-directional ESD protection of two lines or bi-directional ESD protection of one line Low capacitance ESD protection diode in a three pad SOT883 leadless ultra small plastic package designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. * Reverse standoff voltage 3.3 and 5 V * Low diode capacitance * Ultra low leakage current PINNING * Leadless ultra small SOT883 surface mount package (1 x 0.6 x 0.5 mm) * Board space 1.17 mm2 PIN (approx. 10% of SOT23) DESCRIPTION 1 cathode 1 * ESD protection >15 kV 2 cathode 2 * IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact). 3 common anode APPLICATIONS * Cellular handsets and accessories * Portable electronics * Computers and peripherals Top view 1 2 * Communication systems 2 * Audio and video equipment. 3 3 1 MARKING Bottom view TYPE NUMBER PESD3V3L2UM F2 PESD5V0L2UM F1 2005 May 23 MLE220 MARKING CODE Fig.1 Simplified outline (SOT883) and symbol. 2 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode PESDxL2UM series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Ipp 8/20 s pulse; notes 1, 2 and 3 peak pulse current PESD3V3L2UM - 3 A PESD5V0L2UM - 2.5 A Ppp peak pulse power 8/20 s pulse; notes 1, 2 and 3 - 30 W IFSM non-repetitive peak forward current tp = 1 ms; square pulse - 3.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse - 0.9 A PESD3V3L2UM - 0.8 A Ptot total power dissipation Tamb = 25 C; note 4 - 250 mW PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 - 6 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 - kV HBM MIL-Std 883 10 - kV PESD5V0L2UM Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 4. Device mounted on standard printed-circuit board. ESD standards compliance IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact) HBM MIL-Std 883, class 3 >4 kV THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT all diodes loaded; note 1 500 K/W one diode loaded; note 2 290 K/W Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 m copper strip line. 2. FR4 single-sided copper 1 cm2. 2005 May 23 3 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode PESDxL2UM series ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode - 1 1.2 V PESD3V3L2UM - - 3.3 V PESD5V0L2UM - - 5 V VF forward voltage VRWM reverse stand-off voltage IRM V(CL)R reverse leakage current PESD3V3L2UM VR = 3.3 V - 75 300 nA PESD5V0L2UM VR = 5 V - 5 25 nA Ipp = 1 A; notes 1 and 2 - - 8 V Ipp = 3 A; notes 1 and 2 - - 12 V Ipp = 1 A; notes 1 and 3 - - 9 V Ipp = 3 A; notes 1 and 3 - - 13 V Ipp = 1 A; notes 1 and 2 - - 10 V Ipp = 2.5 A; notes 1 and 2 - - 13 V Ipp = 1 A; notes 1 and 3 - - 11 V Ipp = 2.5 A; notes 1 and 3 - - 15 V PESD3V3L2UM 5.32 5.6 5.88 V PESD5V0L2UM 6.46 6.8 7.14 V - 1.3 - mV/K - 2.9 - mV/K PESD3V3L2UM - - 200 PESD5V0L2UM - - 100 f = 1 MHz; VR = 0 - 22 28 pF f = 1 MHz; VR = 5 - 12 17 pF f = 1 MHz; VR = 0 - 16 19 pF f = 1 MHz; VR = 5 - 8 11 pF clamping voltage PESD3V3L2UM PESD5V0L2UM VBR SZ IF = 200 mA breakdown voltage temperature coefficient 8/20 s pulse IZ = 1 mA IZ = 1 mA PESD3V3L2UM PESD5V0L2UM rdiff Cd differential resistance IR = 1 mA diode capacitance PESD3V3L2UM PESD5V0L2UM Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 2005 May 23 4 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode MLE215 10 PESDxL2UM series MLE216 26 Cd handbook, halfpage handbook, halfpage IZSM (A) (pF) 22 18 PESD3V3L2UM 1 PESD3V3L2UM 14 PESD5V0L2UM PESD5V0L2UM 10 10-1 10-2 10-1 1 tp (ms) 6 10 1 0 2 3 4 5 VR (V) Tj = 25 C; f = 1 MHz. Fig.2 Non-repetitive peak reverse current as a function of pulse time (square pulse). Fig.3 MLE217 102 handbook, halfpage Diode capacitance as a function of reverse voltage; typical values. MLE218 120 handbook, halfpage Ipp (%) PZSM 100 % Ipp; 8 s (W) 80 e-t PESD3V3L2UM 10 50 % Ipp; 20 s PESD5V0L2UM 40 1 10-2 10-1 1 tp (ms) 0 10 0 10 20 30 t (s) 40 PZSM = VZSM x IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 2005 May 23 Fig.5 5 8/20 s pulse waveform according to IEC 61000-4-5. NXP Semiconductors Product data sheet Low capacitance double ESD protection diode handbook, full pagewidth ESD TESTER RZ 450 RG 223/U 50 coax PESDxL2UM series 4 GHz DIGITAL OSCILLOSCOPE 10 x ATTENUATOR 50 CZ note 1 1 2 D.U.T PESDxL2UM Note 1: IEC 61000-4-2 network CZ = 150 pF; RZ = 330 3 vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div GND2 PESD5V0L2UM PESD3V3L2UM GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2005 May 23 6 MLE219 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode PESDxL2UM series PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2005 May 23 REFERENCES IEC JEDEC JEITA SC-101 7 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet Low capacitance double ESD protection diode PESDxL2UM series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 May 23 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp9 Date of release: 2005 May 23 Document order number: 9397 750 15162