AlGaAs Infrared Emitting Diode
SEP8736
DESCRIPTION
FEATURES
Side-looking plastic package
•
10¡ (nominal) beam angle
•
880 nm wavelength
•
Enhanced coupling distance
•
Mechanically and spectrally matched to
SDP8436 phototransistor
•
The SEP8736 is an aluminum gallium arsenide infrared
emitting diode molded in a side-emitting smoke gray
plastic package. The body and integral lens design
combines the mounting advantage of a side-emitting
package with the narrow emission pattern of a T-1 style
device. The SEP8736 IRED is designed for those
applications which require longer coupling distances
than standard side-emitting devices can provide, such
as touch screens. The IRED is also especially well
suited to applications in which adjacent channel
crosstalk could be a problem.
DIM_070.ds4
INFRA-80.TIF
OUTLINE DIMENSIONS
in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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AlGaAs Infrared Emitting Diode
SEP8736
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
100 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
57
AlGaAs Infrared Emitting Diode
SEP8736
Radiant Intensity vs
Angular Displacement
gra_097.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vs
Forward Current
gra_033.ds4
Forward current - mA
Normalized radiant
intensity
0.01
0.10
1.00
10.00
0.1 1.0 10 100
TA = 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_201.ds4
Forward current - mA
Forward voltage - V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vs
Temperature
gra_208.ds4
Temperature - °C
Forward voltage - V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60 85
IF = 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth
gra_011.ds4
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristics
with SDP8436
gra_034.ds4
Lens-to-lens separation - inches
Normalized light
current
0.001
0.1
1.0
10
0.1 1.0 10
0.01
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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AlGaAs Infrared Emitting Diode
SEP8736
Relative Power Output vs
Free Air Temperature
gra_130.ds4
T
A - Free-air temperature - (°C)
Relative power output
0.1
1.0
10
-50 -25 0+25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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