SEP8736 AlGaAs Infrared Emitting Diode FEATURES * Side-looking plastic package * 10 (nominal) beam angle * 880 nm wavelength * Enhanced coupling distance * Mechanically and spectrally matched to SDP8436 phototransistor INFRA-80.TIF DESCRIPTION The SEP8736 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The body and integral lens design combines the mounting advantage of a side-emitting package with the narrow emission pattern of a T-1 style device. The SEP8736 IRED is designed for those applications which require longer coupling distances than standard side-emitting devices can provide, such as touch screens. The IRED is also especially well suited to applications in which adjacent channel crosstalk could be a problem. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.005(0.12) 2 plc decimals 0.020(0.51) DIM_070.ds4 56 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8736 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 50 mA 100 mW [A] -40C to 85C -40C to 85C 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.78 mW/C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 57 SEP8736 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_097.ds4 Normalized radiant intensity 1.00 TA = 25 C 0.10 0.01 -40 -30 -20 -10 0 +10 +20 +30 +40 0.1 Angular displacement - degrees Fig. 3 Fig. 4 Forward Voltage vs Forward Current gra_201.ds4 100 Forward Voltage vs Temperature gra_208.ds4 1.55 Forward voltage - V Forward voltage - V 1.4 1.3 1.2 1.1 1.50 1.45 1.40 1.35 IF = 20 mA 1.30 1.25 1.0 1.20 0 10 20 30 40 50 -40 Forward current - mA Fig. 6 Spectral Bandwidth 10 35 60 85 Coupling Characteristics with SDP8436 gra_034.ds4 10 Normalized light current 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 760 -15 Temperature - C gra_011.ds4 Relative intensity 10 1.60 1.5 800 840 880 920 960 1000 1.0 0.1 0.01 0.001 0.1 Wavelength - nm 58 1.0 Forward current - mA 1.6 Fig. 5 gra_033.ds4 10.00 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative intensity Radiant Intensity vs Forward Current 1.0 10 Lens-to-lens separation - inches h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8736 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 59