V
RRM
= 1400 V - 1600 V
I
F
= 40 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
S40V thru S40YR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
2. Reverse polarity (R): Stud is anode.
• Types from 1400 V to 1600 V V
RRM
S40V (R)
1400 1600
S40Y (R)
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 100 V, T
j
= 160 °C
V
10
4.5
10
4.5
1.25 1.25
V
R
= 100 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
Reverse current I
R
V
F
A
990
1400
40
595
1130
1600
40
595
-55 to 150
S40V (R) S40Y (R)
1.1 1.1
-55 to 150
-55 to 150
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
S40V thru S40YR
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
S40V thru S40YR
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
