2010-06-28
BFP520
1
1
2
3
4
NPN Silicon RF Transistor
• High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
• Designed for low voltage applications,
ideal for 1.2 V or 1.8 V VCC
• Ideal as IF amplifier from 950 - 2150 MHz
or LNA in C-Band LNB 3.4 - 4.2 GHz
• Pb-free (RoHS compliant) standard package
with visible leads
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
= -55 °C
VCEO
2.5
2.4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC40 mA
Base current IB4
Total power dissipation1)
TS ≤ 105 °C
Ptot 100 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 450 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.5 3 3.5 V
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 10 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 2 V, IE = 0
ICBO - - 30
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 100 3000
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured
hFE 70 110 170 -
1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz
fT32 45 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.07 0.13 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.33 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin - 0.95 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gms - 24 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|2- 21.5 -
Third order intercept point at output
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 7 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
IP3
-
-
25
17
-
-
dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 7 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
P-1dB
-
-
12
5
-
-
1Gms = |S21 / S12|
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mW
120
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 V3
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
28
32
36
40
44
GHz
52
fT
2
1
0.75
0.5
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Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 20 mA
01234GHz 6
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 V3
VCE
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
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Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
Zs = 50Ohm
Zs = Zsopt
Noise figure F = ƒ(f)
VCE = 2 V, ZS = ZSopt
012345GHz 6.5
f
0
0.5
1
1.5
2
dB
3
F
IC = 5 mA
IC = 2 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
6GHz
0.45GHz
0.9GHz
1.8GHz
2mA
5mA
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SPICE GP Model
For the SPICE GP model as well as for the S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
You find the BFP520 SPICE GP model in the internet in MWO- and ADS- format which
you can import into these circuit simulation tools very quickly and conveniently.
The simulation data have been generated and verified using typical devices.
The BFP520 SPICE GP model reflects the typical DC- and RF-performance with
high accuracy.
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2010-06-28
BFP520
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Datasheet Revision History: 28 June 2010
This datasheet replaces the revision from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 30 March 2007
Page Subject (changes since last revision)
1 Typical values for leakage currents included, values for maximum leakage
currents reduced
4 OIP3 characteristic added
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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