BFP520 NPN Silicon RF Transistor * High gain and low noise at high frequencies 3 due to high transit frequency f T = 45 GHz 2 4 * Designed for low voltage applications, 1 ideal for 1.2 V or 1.8 V V CC * Ideal as IF amplifier from 950 - 2150 MHz or LNA in C-Band LNB 3.4 - 4.2 GHz * Pb-free (RoHS compliant) standard package with visible leads * Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520 Marking APs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V 2.5 2.4 TA = -55 C Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 40 Base current IB 4 Total power dissipation1) Ptot 100 mW Junction temperature TJ 150 C Storage temperature T Stg mA TS 105 C 1T -55 ... 150 S is measured on the emitter lead at the soldering point to pcb 2010-06-28 1 BFP520 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS 450 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter min. typ. max. 2.5 3 3.5 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 2 V, VBE = 0 - 1 30 VCE = 10 V, VBE = 0 - - 1000 ICBO - - 30 IEBO - 100 3000 hFE 70 110 170 Collector-base cutoff current VCB = 2 V, I E = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 2 V, pulse measured 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2010-06-28 2 BFP520 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 32 45 - GHz Ccb - 0.07 0.13 Cce - 0.3 - Ceb - 0.33 - NFmin - 0.95 - dB G ms - 24 - dB |S21| 2 - 21.5 - IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output IP 3 dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt - 25 - - 17 - - 12 - - 5 - VCE = 2 V, I C = 7 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt 1dB Compression point at output P-1dB IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 7 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 1G ms = |S21 / S12 | 2010-06-28 3 BFP520 Total power dissipation Ptot = (TS) Collector-base capacitance Ccb= (VCB) f = 1MHz 120 0.3 mW pF 100 80 CCB Ptot 90 70 60 0.2 0.15 50 40 0.1 30 20 0.05 10 0 0 20 40 60 80 100 120 C 0 0 150 0.5 1 1.5 2 TS V 3 VCB Third order Intercept Point IP3 = (IC) Transition frequency fT= (IC) (Output, ZS = ZL = 50 ) f = 2 GHz VCE = parameter, f = 900 MHz VCE = parameter in V 52 GHz 2 44 40 1 fT 36 32 28 24 0.75 20 16 12 8 0.5 4 0 0 5 10 15 20 25 30 35 mA 45 IC 2010-06-28 4 BFP520 Power gain Gma, Gms , |S 21|2 = (f) Power gain Gma, Gms = (I C) VCE = 2 V, I C = 20 mA VCE = 2V f = parameter in GHz 32 44 dB 0.9 dB 36 32 Gms 1.8 24 G G 2.4 28 20 3 24 4 16 20 |S21| 5 Gma 6 12 16 12 8 8 4 4 0 0 1 2 3 4 GHz 0 0 6 5 10 15 20 25 30 35 mA 45 IC f Power gain Gma, Gms = (VCE) Noise figure F = (I C) VCE = 2 V, ZS = ZSopt IC = 20 mA f = parameter in GHz 32 3 0.9 dB dB 1.8 24 20 2 3 F G 2.4 4 16 1.5 5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 6 12 1 8 0.5 4 0 0 0.5 1 1.5 2 V 0 0 3 VCE 5 10 15 20 25 30 mA 40 IC 2010-06-28 5 BFP520 Noise figure F = (IC ) Noise figure F = (f) VCE = 2 V, f = 1.8 GHz VCE = 2 V, ZS = ZSopt 3 3 dB dB F 2 F 2 1.5 1.5 1 1 Zs = 50Ohm Zs = Zsopt 0.5 0 0 IC = 5 mA IC = 2 mA 0.5 5 10 15 20 25 mA 30 0 0 40 IC 1 2 3 4 5 GHz 6.5 f Source impedance for min. noise figure vs. frequency VCE = 2 V, I C = 2 mA / 5 mA +j50 +j25 +j100 +j10 3GHz 4GHz 1.8GHz 0.9GHz 5GHz 6GHz 0 10 25 50 100 0.45GHz 2mA 5mA -j10 -j25 -j100 -j50 2010-06-28 6 BFP520 SPICE GP Model For the SPICE GP model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP520 SPICE GP model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFP520 SPICE GP model reflects the typical DC- and RF-performance with high accuracy. 2010-06-28 7 Package SOT343 BFP520 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2010-06-28 8 BFP520 Datasheet Revision History: 28 June 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 30 March 2007 Page Subject (changes since last revision) 1 4 Typical values for leakage currents included, values for maximum leakage currents reduced OIP3 characteristic added 2010-06-28 9 BFP520 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-06-28 10