BA277,335 - NXP Semiconductors / Philips Semiconductors

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- NXP Semiconductors, which will be used in future data sheets together with new contact

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NXP Semiconductors

BA277

Band-switching diode

Rev. 02 — 7 January 2008 Product data sheet

NXP Semiconductors Product speciﬁcation

Band-switching diode BA277

FEATURES

•Small plastic SMD package

•Continuous reverse voltage: max. 35 V

•Continuous forward current: max. 100 mA

•Low diode capacitance: max. 1.2 pF

•Low diode forward resistance: max. 0.7 Ω.

APPLICATIONS

•Low loss band switching in VHF television tuners.

•Surface mount band-switching circuits.

DESCRIPTION

Planar high performance band-switching diode in a small

plastic SOD523 (SC-79) SMD package.

PINNING

PIN DESCRIPTION

1 cathode

2 anode

Fig.1 Simplified outline (SOD523; SC-79)

and symbol.

Marking code: 1.

handbook, halfpage



Top view

MAM399

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous reverse voltage −35 V

IFcontinuous forward current −100 mA

Ptot total power dissipation Ts=90°C−715 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

ELECTRICAL CHARACTERISTICS

Tj= 25°C unless otherwise speciﬁed.

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF=10mA 1 V

Rreverse current VR= 25 V 50 nA

VR= 20 V; Tamb =75°C1µA

diode capacitance f = 1 MHz; VR= 6 V; note 1; see Fig.2 1.2 pF

rDdiode forward resistance IF= 2 mA; f = 100 MHz; note 1; see Fig.3 0.7 Ω

SYMBOL PARAMETER VALUE UNIT

Rth j-s thermal resistance from junction to soldering-point 85 K/W

Rev. 02 - 7 January 2008

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NXP Semiconductors Product speciﬁcation

Band-switching diode BA277

GRAPHICAL DATA

Fig.2 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

10−1

MGL433

110

(V)

(pF)

102

Fig.3 Diode forward resistance as a function of

forward current; typical values.

f = 100 MHz; Tj=25°C.

handbook, halfpage

2.5

0.5

1.5

1.0

2.0

MGL432

10−11

(Ω)

IF (mA) 10

Rev. 02 - 7 January 2008

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NXP Semiconductors Product speciﬁcation

Band-switching diode BA277

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD523 SC-79 02-12-13

06-03-16

Plastic surface-mounted package; 2 leads SOD523

0 0.5 1 mm

scale

Ebp

vMA

UNIT bpcDEv

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1) 0.34

0.26 0.17

0.11 0.1

0.85

0.75

1.25

1.15

0.65

0.58 1.65

1.55

Rev. 02 - 7 January 2008

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NXP Semiconductors BA277

Band-switching diode

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 02 - 7 January 2008

5 of 6

NXP Semiconductors BA277

Band-switching diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 January 2008

Document identifier: BA277_N_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BA277_N_2 20080107 Product data sheet - BA277_1

Modiﬁcations: •Package outline on page 4 changed

BA277_1

(9397 750 03793) 19980506 Product speciﬁcation - -