APTDF200H20G
APTDF200H20G – Rev 1 June, 2006
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+
AC2
-
AC1
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Reverse Voltage 200 V
TC = 25°C 285
IF(A V) Maximum Average Forward
Current Duty cycle = 50% TC = 80°C 200
IF(RMS) RMS Forward Current Duty cycle = 50% TC = 45°C 285
IFSM Non-Repetitive Forward Surge Current 8.3ms TC = 45°C 1500
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
AC1
+
AC2
-
VRRM = 200V
IC = 200A @ Tc = 80°C
Applicatio
n
• Uninterruptible Power Supply (UPS)
• Ind uctio n heati ng
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq ue ncy
operation
• Low losses
• Low noise switching
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Diode Full Bridge
Power Module
APTDF200H20G
APTDF200H20G – Rev 1 June, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 200A 1.0 1.1
IF = 400A 1.4 VF Diode Forward Voltage
IF = 200A Tj = 125°C 0.9
V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR = 200V Tj = 125°C 600 µA
CT Junction Capacitance VR = 200V 800 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
trr Reverse Recovery Time IF=1A,VR=30V
di/dt = 200A/µs Tj = 25°C 39 ns
Tj = 25°C 60
trr Reverse Recovery Time Tj = 125°C 110 ns
Tj = 25°C 400
Qrr Reverse Recovery Charge
Tj = 125°C 1680
nC
Tj = 25°C 12
IRRM Reverse Recovery Current
IF = 200A
VR = 133V
di/dt = 400A/µs
Tj = 125°C 30
A
trr Reverse Recovery Time 80 ns
Qrr Reverse Recovery Charge 3.82 µC
IRRM Reverse Recovery Current
IF = 200A
VR = 133V
di/dt = 2000A/µs
Tj = 125°C
88 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.285 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280
g
APTDF200H20G
APTDF200H20G – Rev 1 June, 2006
www.microsemi
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com 3 - 4
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=-55°C
TJ=25°CTJ=150°C
TJ=125°C
0
100
200
300
400
500
600
0.00.51.01.52.0
VF, Anode to Cathode Voltage (V)
IF, Forward Current (A)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Char
g
e
100 A
200 A
260 A
20
40
60
80
100
0 400 800 1200 1600 2000 2400
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
TJ=125°C
VR=133V
Trr vs. Current Rate of Charge
100 A
200 A
260 A
40
60
80
100
120
0 400 800 1200 1600 2000 2400
-diF/dt (A/µs)
trr, Reverse R ecovery Time (ns)
TJ=125°C
VR=133V
QRR vs. Current Rate Charge
100 A
200 A
260 A
1
2
3
4
5
0 400 800 1200 1600 2000 2400
-diF/dt (A/µs)
QRR, Reverse Recovery Charge (µC)
TJ=125°C
VR=133V
Capacitance vs. Reverse Voltage
0
1500
3000
4500
6000
7500
1 10 100 1000
VR, Reverse Voltage (V)
C, Capacitance (pF)
0
50
100
150
200
250
300
25 50 75 100 125 150
Case Temperature (°C)
IF(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=150°C
APTDF200H20G
APTDF200H20G – Rev 1 June, 2006
www.microsemi
.
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SP6 Package outline (dimensions in mm)
M icros emi reserve s the rig ht to c ha nge , wi tho ut notice, the s pe cifications and i nfo rmatio n contained he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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