APTDF200H20G Diode Full Bridge Power Module VRRM = 200V IC = 200A @ Tc = 80C Application + AC1 * * * * AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * - * Benefits * - * * * * * AC1 Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% Max ratings Unit 200 V TC = 25C 285 TC = 80C TC = 45C TC = 45C 200 285 1500 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF200H20G - Rev 1 June, 2006 AC2 + Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTDF200H20G All ratings @ Tj = 25C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF = 200A IF = 400A IF = 200A Tj = 125C Tj = 25C VR = 200V Tj = 125C Min IF = 200A VR = 133V Min Tj = 25C 39 Tj = 25C Tj = 125C Tj = 25C 60 110 400 Tj = 125C Tj = 25C 1680 12 Tj = 125C 30 Tj = 125C di/dt = 2000A/s Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals www.microsemi.com Typ M6 M5 Unit V 800 Test Conditions IF = 200A VR = 133V di/dt = 400A/s Max 1.1 350 600 VR = 200V IF=1A,VR=30V di/dt = 200A/s Typ 1.0 1.4 0.9 A pF Max Unit ns ns nC A 80 ns 3.82 C 88 A Typ Max 0.285 150 125 100 5 3.5 280 Unit C/W V C N.m g 2-4 APTDF200H20G - Rev 1 June, 2006 Electrical Characteristics APTDF200H20G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 500 400 300 T J=150C 200 T J=25C T J=125C T J=-55C 100 0 0.0 0.5 1.0 1.5 TJ =125C VR=133V 200 A 100 260 A 80 100 A 60 40 2.0 0 400 QRR vs. Current Rate Charge 5 TJ =125C VR=133V 4 260 A 200 A 100 A 3 2 1 0 400 800 1200 1600 2000 2400 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) V F, Anode to Cathode Voltage (V) IRRM vs. Current Rate of Charge 100 T J=125C VR=133V 80 200 A 260 A 100 A 60 40 20 0 400 -diF/dt (A/s) 800 1200 1600 2000 2400 -diF/dt (A/s) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 300 7500 Duty Cycle = 0.5 T J=150C 250 6000 IF(AV) (A) C, Capacitance (pF) 800 1200 1600 2000 2400 -diF/dt (A/s) 4500 3000 200 150 100 1500 50 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 Case Temperature (C) www.microsemi.com 3-4 APTDF200H20G - Rev 1 June, 2006 IF, Forward Current (A) Trr vs. Current Rate of Charge 120 600 APTDF200H20G Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF200H20G - Rev 1 June, 2006 SP6 Package outline (dimensions in mm)