1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD0.8
4.6 Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD3.7
20 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 219 °C/W
Thermal Resistance, Junction to Case R
q
JC 50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Cutof f Current
(IE = 0, VCES = –60 Vdc)
(IE = 0, VCES = –60 Vdc, TAmb = 150°C)
ICES —
—–100
–100 nAdc
µAdc
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, IE = 0) V(BR)CES –60 — Vdc
Collector–Emitter Breakdown Voltage (1)
(IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0) V(BR)EBO –5.0 — Vdc
1. Pulsed: Pulse Duration = 300
m
s, Duty Cycle = 2.0%.
Order this document
by BC161–16/D
SEMICONDUCTOR TECHNICAL DATA
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces BC160–16/D)
BC161-16
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 mAdc, VCE = –1.0 Vdc) hFE 100 250 —
Collector–Emitter Saturation V oltage (1)
(IC = –1.0 Adc, IB = –0.1 Adc) VCE(sat) — –1.0 Vdc
Base–Emitter Saturation V oltage (1)
(IC = –1.0 Adc, VCE = –1.0 Vdc) VBE(on) —–1.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz) fT50 — MHz
Input Capacitance
(VEB = –10 Vdc, f = 1.0 MHz) Cib —180 pF
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo —30 pF
T urn–On Time
(IC = –100 mAdc, IB1 = –5.0 µAdc) ton —500 ns
Turn–Off Time
(IC = –100 mAdc, IB1 = IB2 = –5.0 µAdc) toff —650 ns
1. Pulsed: Pulse Duration = 300
m
s, Duty Cycle = 2.0%.
Figure 1. Turn–On Figure 2. Turn–Off
SWITCHING TIME EQUIVALENT TEST CIRCUITS
200
Ω
–30 V
59
Ω
1N916
PULSE WIDTH = 200 ns
RISE TIME
≤
2.0 ns
DUTY CYCLE
≤
2.0%
RB
RC
SCOPE
200
Ω
RB
+3.0 V
–30 V
59
Ω
RC
SCOPE
2 < t1 < 500
µ
s
2 < t2 < 5.0 ns
2 < t3 > 1.0
µ
s
DUTY CYCLE = 2.0%
+2.0 V
0
–10.85 V
0
+8.8 V
t1
t2t3
11.2 V
BC161-16
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
100
–0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
VCC = –30 V
IC/IB = 10
Q, CHARGE (nC)
CAPACITANCE (pF)
QT
QA
Ceb
Figure 5. Delay Time
IC, COLLECTOR CURRENT (mA)
–10
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TRANSIENT CHARACTERISTICS
25°C 100°C
Ccb
t, TIME (ns)
t, TIME (ns)
IC/IB = 10
VBE(off) = 2.0 V
VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
1.0
2.0
3.0
5.0
10
20
30
50
–0.2–0.3 –0.5 –1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
–10 –20 –30 –50 –100 –200 –300 –500 –1000
100
5.0
7.0
10
20
30
50
70
–20 –30 –50 –70 –100 –200 –300 –500 –700–1000 –10 –20 –30 –50 –70 –100 –200 –300 –500 –700 –1000
100
5.0
7.0
10
20
30
50
70
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
2001000
–10
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
IB1 = IB2
IC/IB = 10
VCC = –30 V
ts
′
= ts – 1/3 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
10
20
30
50
70
100
200
300
500
700
–20 –30 –50 –70 –100 –200 –300 –500 –700 –1000 10
20
30
70
50
100
–10 –20 –30 –50 –70 –100 –200 –300 –500 –700–1000
BC161-16
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
–10
m
A
IC = –1.0 mA, RS = 100
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
30
fe
–100
µ
A, RS = 680
–10
µ
A, RS = 7.0 k
Ω
RS = OPTIMUM SOURCE RESISTANCE
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
00.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
–100
m
A
IC = –1.0 mA f = 1.0 kHz
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
050 100 200 300 500 1.0k 2.0k 3.0k 5.0k 10k 20k 30k 50k
20
15
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
This group of graphs illustrates the relationship of the “h” parameters for this series of transistors. To obtain these
curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph.
UNIT 4 3
2
1
30
0.3
0.5
0.7
1.0
5.0
7.0
2.0
3.0
10
20
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
UNIT 1
2
34
hie, INPUT IMPEDANCE (k OHMS)
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
100
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
oe
m
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
UNIT 1
3
24
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
UNIT 1
2
3
4
h , VOLTAGE FEEDBACK RATIO (X 10 )
re –4
10
2.0
7.0
5.0
1.0
3.0
20
30
50
70 100
10
2.0
7.0
5.0
1.0
3.0
20
30
50
70
BC161-16
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0.1
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
TJ = 175
°
C
25
°
C–55
°
C
VCE = –1.0 V
VCE = –10 V
STATIC CHARACTERISTICS
0
IB, BASE CURRENT (mA)
Figure 15. DC Current Gain
VCE, COLLECT OR–EMITTER VOLTAGE (VOLTS)
Figure 16. Collector Saturation Region
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
0.5
0.7
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –700 –1000
–0.2
–0.4
–0.6
–0.8
–1.0
–0.005 –0.007 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
IC = –1.0 mA –500 mA–100 mA–10 mA
TJ = 25
°
C
Figure 17. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
–0.6
–1.0
VBE(sat) @ IC/IB = 10
VOLTAGE (VOL TS)
COEFFICIENT (mV/ C)
°
–0.4
–0.8
–1.0
–0.2
0–2.0–3.0 –5.0 –10 –20–30 –50 –100 –200–300 –500 –1000
VBE(on) @ VCE = –1.0 V
VCE(sat) @ IC/IB = 10
–1.0
–2.0
0
+1.0
–3.0
–4.0
–1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100 –200 –300 –500 –1000
θ
VC for VCE(sat)
θ
VB for VBE
BC161-16
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
RATINGS AND THERMAL DATA
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 19 is based upon TJ(pk) = 200°C; TC is variable
depending upon conditions. Pulse curves are valid for duty cycles
to 10% provided TJ(pk) ≤ 200°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–3.0
–2.0 –3.0 –5.0 –10 –20 –30 –50 –100
IC, COLLECTOR CURRENT (AMP)
–0.03
–0.05
–0.07
–0.1
–0.2
–0.3
–0.5
–1.0
–2.0
–7.0 –70
TJ = 200
°
C0.1 ms
1.0 ms
dc
SECONDAR Y BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25
°
C (SINGLE PULSE)
CURVES APPLY BELOW
RATED VCEO
Figure 19. Safe Operating Area
BC161-16
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 079–04
(TO–205AD)
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
R
EF
B
C
K
L
P
D3 PL
–T–
–A–
–H–
M
J
G
2
31
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.335 0.370 8.51 9.39
B0.305 0.335 7.75 8.50
C0.240 0.260 6.10 6.60
D0.016 0.021 0.41 0.53
E0.009 0.041 0.23 1.04
F0.016 0.019 0.41 0.48
G0.200 BSC 5.08 BSC
H0.028 0.034 0.72 0.86
J0.029 0.045 0.74 1.14
K0.500 0.750 12.70 19.05
L0.250 ––– 6.35 –––
M45 BSC 45 BSC
P––– 0.050 ––– 1.27
R0.100 ––– 2.54 –––
__
M
A
M
0.36 (0.014) H M
T
BC161-16
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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BC161–16/D
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