CY7C1332AV25-250BGXC - Cypress Semiconductor Corp.

PRELIMINARY

18-Mbit (512K x 36/1Mbit x 18)

Pipelined Register-Register Late Write

CY7C1330AV25

CY7C1332AV25

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document No: 001-07844 Rev . *A Revised September 20, 2006

Features

• Fast clock speed: 250, 200 MHz

• Fast access time: 2.0, 2.25 ns

• Synchronous Pipelined Operation with Self-timed Late

Write

• Internally synchronized registered outpu ts eliminate

the need to control OE

• 2.5V core supply voltage

• 1.4–1.9V VDDQ supply with VREF of 0.68–0.95V

— Wide range HSTL I/O Levels

• Single Differential HSTL clock Input K and K

•Single WE (READ/WRITE) control pin

• Individual byte write (BWS[a:d]) con tr ol (m ay be tied

LOW)

• Common I/O

• Asynchronous Output Enable Input

• Programmable Imp edance Output Drivers

• JTAG boundary sca n for BGA packaging version

• Available in a 119-b all BGA package (CY7C1330AV25

and CY7C1332AV 25)

Configuration

CY7C1330AV25 – 512K x 36

CY7C1332AV25 – 1M x 18

Functional Description

The CY7C1330AV25 and CY7C1332AV25 are high perfor-

mance, Synchronous Pipelined SRAMs designed with late

write operation. These SRAMs can achieve speeds up to 250

MHz. Each memory cell consists of six transistors.

Late write feature avoids an idle cycle required during the

turnaround of the bus from a read to a write.

All synchronous inputs are gated b y registers controlled by a

positive-edge-triggered Clock Input (K). The synchronous

inputs include all addresses (A), all data inputs (DQ[a:d]), Chip

Enable (CE), Byte Write Selects (BWS[a:d]), and read-write

control (WE). Read or Write Operations can be initiated with

the chip enable pin (CE). This signal allows the user to

select/deselect the device when desire d.

Power down feature is accomplished by pulling the

Synchronous signal ZZ HIGH.

Output Enable (OE) is an asynchronous input signal. OE can

be used to disable the outputs at any given ti me.

Four pins are used to implement JTAG test capabilities. The

JTAG circuitry is used to serially shift data to and from the

device. JTAG inputs use LVTTL/LVCMOS levels to shift data

during this testing mode of operati on.

K,K

BWS

512Kx36

Logic Block Diagram

Data-In REG.

CONTROL

and WRITE

LOGIC

1Mx18

OUTOUT

REGISTERS

and LOGIC

512Kx36

1Mx18

AXDQXBWSX

X = 18:0

X = 19:0 X = a, b

X = a, b, c, d

X = a, b

X = a, b, c, d

Clock

Buffer

MEMORY

ARRAY

(2stage)

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 2 of 19

Selection Guide

CY7C1330AV25-250

CY7C1332AV25-250 CY7C1330AV25-200

CY7C1332AV25- 200 Unit

Maximum Access T i me 2.0 2.25 ns

Maximum Operating Current 600 550 mA

Maximum CMOS Standby Current 280 260 mA

Pin Configurations

2345671

DQa

VDDQ

DQc

DQd

DQc

DQd

AA AANC VDDQ

VDDQ

DQc

DQd

TMS

VDD

DQd

NC A A NC

VDD AANC

VSS VSS

ZQ DQbDQb

DQb

DQa

DQb

DQa

NCTDI TDO VDDQ

TCK

VSS

VREF

VSS

CE VSS

OE VSS VDDQ

BWScNC VSS

NC VDDQ

VDD VREF VDD

VSS

KBWSa

WE VSS VDDQ

VSS

A1 VSS

VDD M2

CY7C1330AV25 (512K x 36)

DQcDQb

DQc

DQcDQc

DQbDQb

DQaDQa

DQa

DQdDQd

DQd

BWSd

119

BGA

(14

)

BWSb

CY7C13 32 AV 2 5 (1 M x 18 )

2345671

DQa

VDDQ

DQb

AA AANC VDDQ

VDDQ

DQb

TMS

VDD

DQb

NC A A NC

VDD AANC

VSS VSS

ZQ DQaDQa

DQa

NCTDI TDO VDDQ

TCK

VSS

VREF

VSS

CE VSS

OE VSS VDDQ

BWSbNC VSS

NC VDDQ

VDD VREF VDD

VSS

KBWSa

WE VSS VDDQ

VSS

NCA

A1 VSS

VDD M2

NC NC

NC A

NC NC

NC NC NC NC

NC NC

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 3 of 19

Pin Definitions

Name I/O Type Description

A Input-

Synchronous Address Inputs used to select one of the address locations. Sampled at the rising

edge of the K.

BWSa

BWSb

BWSc

BWSd

Input-

Synchronous Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the

SRAM. Sampled on the rising edge of CLK. BWSa controls DQa, BWSb controls DQb,

BWSc controls DQc, BWSd controls DQd.

WE Input-

Synchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must

be asserted LOW to initiate a write sequence and high to initiate a read sequence.

K,K Input-

Differential Clock Clock Inputs. Used to capture all synchronous inputs to the device.

CE Input-

Synchronous Chip Enable Input, active LOW. Sampled on the rising edge of CLK. Used to

select/deselect the device.

OE Input-

Asynchronous Output Enable, active LOW. Combined with the synchronous logic block inside the

device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to

behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input

data pins. OE is masked during the data portion of a write sequence, during the first

clock when emerging from a deselected state and when the device has been

deselected.

DQa

DQb

DQc

DQd

I/O-

Synchronous Bidirectional Data I /O lines. As input s, they feed into an on-chip data register that is

triggered by the rising edge of CLK. As outputs, they deliver the data contained in the

memory location specified by A[x:0] during the previous clock rise of the read cycle. The

direction of the pins is controlled by OE and the internal control logic. When OE is

asserted LOW , the pins can behave as outputs. When HIGH, DQa–DQd are placed in

a tri-state condition. The outputs are automatically tri-stated during the data portion of

a write sequence, during the first clock when emerging fro m a deselected state, and

when the device is deselected, regardless of the state of OE. DQ a,b,c,d are 9 bits wide

M1, M2Read Protocol Mode

Pins Mode control pins, used to set the proper read protocol. For specified device

operation, M1 must be connected to VSS, and M2 must be connected to VDD or VDDQ.

These mode pins must be set at power-up and cannot be changed during device

operation.

ZZ Input-

Asynchronous ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep”

condition with data integrity preserved.

ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to

the system data bus impedance. Q[x:0] output impedance are set to 0.2 x RQ, where

RQ is a resistor connected between ZQ and ground. Alternately, this pin can be

connected directly to VDDQ, which enables the minimum impedance mode. This pin

cannot be connected directly to GND or left unconnected.

VDD Power Supply Power supply inputs to the core of the device. For this device, the VDD is 2.5V.

VDDQ I/O Power Supply Power supply for the I/O circuitry. For this device, the VDDQ is 1.5V.

VREF Input-

Reference Voltage Reference Voltage Input. S tatic input used to set the reference level for HSTL inputs

and Outputs as well as AC measurement points.

VSS Ground Ground for the device. Should be connected to ground of the system.

TDO JTAG serial output

Synchronous Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.

TDI JTAG serial input

Synchronous Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK.

TMS Test Mode Select

Synchronous This pin controls the Test Access Port state machine. Sampled on the rising edge

of TCK.

TCK JTAG serial clock Serial clock to the JTAG circuit.

NC – No connects.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 4 of 19

Introduction

Functional Overview

The CY7C1330AV25 and CY7C1332AV25 are synchronous-

pipelined Late Write SRAMs running at speeds up to 250 MHz.

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. All data outputs pass through

output registers controlled by the rising edge of the clock.

Maximum access delay from the clock rise (tCO) is 2.0 ns

(250-MHz device).

Accesses can be initiated by asserting Chip Enable (CE) on

the rising edge of the clock. The address presented to the

device will be latched on this edge of the clock. The access

can either be a read or write operation, depending on the

status of the Write Enable (WE). BWS[d:a] can be used to

conduct individual byte write operations.

Write operations are qualified by the Write Enable (WE). All

writes are simplified with on-chip synchronous self-timed late

write circuitry.

All operations (Reads, Writes, and Deselects) are pipelined.

Pipelined Read Accesses

A read access is initiated when the following conditions are

satisfied at clock rise: (1) Chip Enable (CE) is asserted active

and (2) the Write Enable input signal (WE) is asserted HIGH.

The address presented to the address inputs is latched into

the Address Register and presente d to the me mory core and

control logic. The contro l logic determines th at a read a ccess

is in progress and allows the req uested data to propagate to

the input of the output register. At the rising edge of the next

clock the requested data is allowed to p ropagate through the

output register and on to the d ata bus within 2.0 ns (250-MHz

device) provided OE is active LOW. After the first clock of the

read access the output buffers are controlled by OE and the

internal control logic. OE must be driven LOW in order for the

device to drive out the requested data. During the second

clock, a subsequent operation (Read/Write/Deselect) can be

initiated. Deselecting the device is also pipelined. Therefore,

when the SRAM is deselected at clock rise by one of the chip

enable signals, i ts output will tri-state following the next clo ck

rise.

Bypass Read Operation

Bypass read operation occurs when the last write operation is

followed by a read operation where write and read addresses

are identical. The data outputs are provided from the data in

registers rather than the memory array. This operation occurs

on a byte to byte basis. If only one byte is written during a write

operation and a read operation is performed on the same

address; then a partial bypass read operation is performed

since the new byte data will be from the datain registers while

the remainin g bytes are from the memory array.

Late Write Acces s es

The Late Write feature allows for the write data to be presented

one cycle later after the access is started. This feature elimi-

nates one bus-turnaround cycle which is necessary when

going from a read to a write in an ordinary pipelined

Synchronous Burst SRAM.

Write access is initiated when the following conditions are

satisfied at clock rise: (1) CE is asserted active and (2) the

write signal WE is asserted LOW. The address presented to

Ax is loaded into th e Address Register. The write signals are

latched into the Control Logi c block.

The data lines are automatically tri-stated regardless of the

state of the OE input signal when a write is detected. This

allows the external log ic to present the data on DQ and DQP

(DQ[a:b] for CY7C1332AV25 and DQ[a:d] for CY7C1330AV25).

In addition, the address for the subsequent access

(Read/Write/Deselect) is latched into the Address Register

(provided the appropriate control signals are asserted).

On the next clock rise the data presented to DQ (or a subset

for byte write operations, see Write Cycle Description table for

details) inputs is latched into the device and the write is

complete.

The data written during the Write operation is controlled by

BWS (BWS[a:d] for CY7C1330AV25 and BWS[a:b] for

CY7C1332AV25) signals. The CY7C1330AV25 and

CY7C1332A V25 provide byte write capability that is described

in the Write Cycle Description table. Asserting the Write

Enable input (WE) with th e selected Byte Write Select (BWS )

input will selective ly write to only the desired bytes. Bytes not

selected during a byte write operation will remain unaltered. A

Synchronous self-timed write mechan ism has been provided

to simplify the write operations. Byte write capability has been

included in order to greatly simplify Read/Modify/Write

sequences, which can be reduced to simple byte write opera-

tions.

Because the CY7C1330AV25/CY7C1332AV25 is a common

I/O device, data should not be driven into the device while the

outputs are active. The Output Enable (OE) can be deasserted

HIGH before presenting data to the DQ inputs. Doing so will

tri-state the output drivers. As a safety precaution, DQ is

automatically tri-stated during the data portion of a write cycle,

regardless of the state of OE.

Power-up/Power-down Supply Voltage Sequencing

The power-up and power-down supply voltage application

recommendations are as follows:

Power-up: VSS, VDD, VDDQ, VREF, VIN.

Power-down: VIN, VREF, VDDQ, VDD, VSS.

VDDQ can be applied/removed simultaneously with VDD as

long as VDDQ doe s not exceed VDD by more than 0.5V.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ

pin on the SRAM and VSS to allow the SRAM to adjust its

output driver impedance. The value of RQ must be 5X the

value of the intended line impedance driven by the SRAM, The

allowable range of RQ to guarantee impedance matching with

a tolerance of ±10% is between 175Ω and 350Ω, with

VDDQ=1.5V. The output impedance is adjusted every 1024

cycles to adjust for drifts in supply voltage and temper-

ature.The output buffers can also be programmed in a

minimum impedance configuration by connecting ZQ to VDD.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ

places the SRAM in a power conservation “sleep” mode. T wo

clock cycles are required to enter into or exit from this “sleep”

mode. While in this mode, data integrity is guaranteed.

Accesses pending when entering the “sleep” mode are not

considered valid nor is the completion of the operation

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 5 of 19

guaranteed. The d evice must be deselecte d prior to entering

the “sleep” mode. CE must remain inactive for the duration of

tZZREC after the ZZ input returns LOW.

Cycle Description Truth Table[1, 2, 3, 4, 5]

Operation Address Used CE WE BWSxCLK ZZ Comments

Deselected External 1 X X L-H 0 I/Os tri-state following next recognized clock.

Begin Read External 0 1 X L-H 0 Address latched. Data driven out on the next rising edge of the clock.

Begin Write External 0 0 Valid L-H 0 Address latched, data presented to the SRAM on the next rising

edge of the clock.

Sleep Mode - X X X X 1 Power down mode.

ZZ Mode Electrical Characteristics

Parameter Description Test Conditions Min. Max. Unit

IDDZZ Snooze mode standby current ZZ > VIH 128 mA

tZZS Device operation to ZZ ZZ > VIH 2tCYC ns

tZZREC ZZ recovery time ZZ < VIL 2tCYC ns

Write Cycle Descriptions[1, 2]

Function (CY7C1330AV25) WE BWdBWcBWbBWa

Read 1 X X X X

Wr i te Byte 0 – D Qa01110

Wr i te Byte 1 – D Qb01101

Write Bytes 1, 0 0 1 1 0 0

Wr i te Byte 2 – D Qc01011

Write Bytes 2, 0 0 1 0 1 0

Write Bytes 2, 1 0 1 0 0 1

Write Bytes 2, 1, 0 0 1 0 0 0

Wr i te Byte 3 – D Qd00111

Write Bytes 3, 0 0 0 1 1 0

Write Bytes 3, 1 0 0 1 0 1

Write Bytes 3, 1, 0 0 0 1 0 0

Write Bytes 3, 2 0 0 0 1 1

Write Bytes 3, 2, 0 0 0 0 1 0

Write Bytes 3, 2, 1 0 0 0 0 1

Write All Bytes 0 0 0 0 0

Abort Write All Bytes 0 1 1 1 1

Write Cycle Descriptions[1, 2]

Function (CY7C1332AV25) WE BWbBWa

Read 1 X X

Wr i te Byte 0 – D Qa 010

Wr i te Byte 1 – D Qb 001

Write All Bytes 0 0 0

Abort Write All Bytes 0 1 1

Notes:

1. X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW . BWSx = 0 sig nifies at least one Byt e W rite Select is a ctive, BWSx = Valid signifies that the desired byte write

selects are asserted, see Write Cycle Description table f or details.

2. Write is defined by WE and BWSx. See Write Cycle Description table for details.

3. The DQ pins are controlled by the current cycle and the OE signal.

4. Device will power-up deselected and the I/Os in a tri-st ate condition, regardless of OE.

5. OE assumed LOW.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 6 of 19

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan test access

port (TAP) in the FBGA package. This port operates in accor-

dance with IEEE Standard 1 149.1-1900 but does not have the

set of functions require d for full 1149.1 complian ce. The TAP

operates using JEDEC standard 1.8V I/O logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG

feature. To disable the TAP controller, TCK must be tied LOW

(VSS) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternately

be connected to VDD through a pull-up resistor. TDO should

be left unconnected. Upon power-up, the device will come up

in a reset state which will not interfere with the operation of the

device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs

are captured on the rising edge of TCK. All outputs are driven

from the falling edge of TCK.

Test Mode Select

The TMS input is used to give commands to the T AP controller

and is sampled on the rising edge of TCK. It is allowable to

leave this pin unconnected i f the TAP is n ot used. The pin is

pulled up internally, resu lting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the

registers and can be connected to the input of any of the

registers. The register between TDI and TDO is chosen by the

instruction that is loa ded into th e TAP instruction register. For

information on loading the instruction register, see the TAP

Controller State Diagram. TDI is internall y pulled up and can

be unconnected if the TAP is un used i n an appli cation. T DI is

connected to the most significant bit (MSB) on any register.

Test Data-Out (TDO)

The TDO output pin is used to serially clock data-out from the

registers. The output is active depending upon the current

state of the TAP state machine (see Instruction codes). The

output changes on the falling edge of TCK. TDO is connected

to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (VDD) for five

rising edges of TCK. This RESET does not affect the operation

of the SRAM and may be performed while the SRAM is

operating. At power-up, the TAP is reset internally to ensure

that TDO comes up in a high-Z state.

TAP Registers

Registers are connected betwe en the TDI and TD O pins and

allow data to be scanned into and out of the SRAM test

circuitry. Only on e register can be selected at a time thro ugh

the instruction registers. Data is serially loaded into the TDI pin

on the rising edge of TCK. Da ta is output on the TDO pin on

the falling edge of TCK.

Instruction Register

Three-bit instructions can be serially loaded into the instruction

TDI and TDO pins as shown in T AP Controller Block Diagram.

Upon power-up, the instruction register is loaded with the

IDCODE instruction. It is also loaded with the IDCODE

instruction if the controller is placed in a reset state as

described in the previous section.

When the TAP controller is in the Capture IR state, the two

least significant bits are loaded with a binary “01” pattern to

allow for fault isolation of the board level seri al test path.

Bypass Register

To save time when serially shifting data through registers, it is

sometimes advantageous to skip certain chips. The bypass

and TDO pins. This allows data to be shifted through the

SRAM with minimal delay. The bypass register is set LOW

(VSS) when the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and

output pins on the SRAM. Several no connect (NC) pins are

also included in the scan register to reserve pins for higher

density devices.

The boundary scan register is loaded with the contents of the

RAM Input and Output ring when the TAP controller is in the

Capture-DR state and is then placed between the TDI and

TDO pins when the controller is mo ved to the Shift-DR state.

The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instruc-

tions can be used to capture the contents of the Input and

Output ring.

The Boundary Scan Order tables show the order in which the

bits are connected. Each bit corresponds to one of the bumps

on the SRAM package. The MSB of the register is connected

to TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code

during the Capture-DR state when the IDCODE command is

loaded in the instruction register. The IDCODE is hardwired

into the SRAM and can be shifted out when the TAP controller

is in the Shift-DR state. The ID register has a vendor code and

other information described in the Identification Register

Definitions table.

TAP Instruction Set

Eight different instructions are possible with the three-bit

instruction register. All combinations are listed in the

Instruction Code table. Three of these instructions are listed

as RESERVED and should not be used. The other five instruc-

tions are described in detail below.

Instructions are loaded into the TAP controller during the

Shift-IR state when the instruction register is placed between

TDI and TDO. During this state, instructions are shifted

through the instruction register through the TDI and TDO pins.

To execute the instruction once it is shifted in, the TAP

controller needs to be moved into the Update -IR state.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 7 of 19

EXTEST

EXTEST is a mandatory 1149.1 instruction which is to be

executed whenever the instruction register is loaded with all

0s. EXTEST is not implemented in this SRAM TAP controller,

and therefore this device is not compliant to 1149.1. The TAP

controller does recognize an all-0 instruction.

When an EXTEST instruction is loaded into the instruction

instruction has been loaded. There is one difference between

the two instructions. Unlike the SAMPLE/PRELOAD

instruction, EXTEST places the SRAM outputs in a High-Z

state.

IDCODE

The IDCODE instruction causes a vendor-specific, 32-bit code

to be loaded into the instruction register. It also places the

instruction register between the TDI and TDO pins and allows

the IDCODE to be shifted out of the device when the TAP

controller enters the Shift-DR state. The IDCODE instruction

is loaded into the instruction register upon power-up or

whenever the TAP controller is given a test logic reset state.

SAMPLE Z

The SAMPLE Z instruction causes the boundary scan register

to be connected between the TDI and TDO pins when the T AP

controller is in a Shift-DR state. The SAMPLE Z command puts

the output bus into a High-Z state until the next command is

given during the “Update IR” state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When

the SAMPLE/PRELOAD instructions are loaded into the

instruction register and the T AP controller is in the Capture-DR

state, a snapshot of data on the inputs and output pins is

captured in the boundary scan register.

The user must be aware that the TAP controller clock can only

operate at a frequency up to 20 MHz, while the SRAM clock

operates more than an order of magnitude faster. Because

there is a large difference in the clock frequencies, it is

possible that during th e Capture-DR state, an input or output

will undergo a transition. The TAP may then try to capture a

signal while in transition (metastable st ate). This will not harm

the device, but there is no guarante e as to the value that will

be captured. Repeatable results may not be possible.

To guarante e th at the boun dary scan register will capture the

correct value of a signal, the SRAM signa l must be stabilized

long enough to meet the TAP controller's capture set-up plus

hold times (tCS and tCH). T he SRAM clock input might not be

captured correctly if there is no way in a design to stop (or

slow) the clock during a SAMPLE/PRELOAD instruction. If this

is an issue, it is still possible to capture all other signals and

simply ignore the value of the CK and CK captured in the

boundary scan register.

Once the data is captured, it is possible to shift out the data by

putting the TAP into the Shift-DR state. This places the

boundary scan register between the TDI and TDO pins.

PRELOAD allows an initial data pattern to be placed at the

latched parallel outputs of the boundary scan register cells

prior to the selection of another boundary scan test operation.

The shifting of data for the SAMPLE and PRELOAD phases

can occur concurrently when required—that is, while data

captured is shifted out, the preloaded data can be shifted in.

BYPASS

When the BYPASS instruction is loaded in the instruction

advantage of the BYPASS instruction is that it shortens the

boundary scan path when multiple devices are connected

together on a board.

Reserved

These instructions are not implemented but are reserved for

future use. Do not use these instructions.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 8 of 19

Note:

6. The 0/1 next to each state re presents the value at TMS at the rising edge of TCK.

TAP Controller State Diagram[6]

TEST-LOGIC

RESET

TEST-LOGIC/

IDLE SELECT

DR-SCAN

CAPTURE-DR

SHIFT-DR

EXIT1-DR

PAUSE-DR

EXIT2-DR

UPDATE-DR

SELECT

IR-SCAN

CAPTURE-IR

SHIFT-IR

EXIT1-IR

PAUSE-IR

EXIT2-IR

UPDATE-IR

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 9 of 19

TAP Controller Block Diagram

TAP Electrical Characteristics Over the Operating Range[7, 8, 9]

Parameter Description Test Conditions Min. Max. Unit

VOH1 Output HIGH Voltage IOH = −2.0 mA 1.7 V

VOH2 Output HIGH Voltage IOH = −100 µA2.1 V

VOL1 Output LOW Voltage IOL = 2.0 mA 0.7 V

VOL2 Output LOW Voltage IOL = 100 µA0.2V

VIH Input HIGH Voltage 1.7 VDD + 0.3 V

VIL Input LOW Voltage –0.3 0.7 V

IXInput and Output Load Current GND ≤ VI ≤ VDD –5 5 µA

TAP AC Switching Characteristics Over the Operating Range [10, 11]

Parameter Description Min. Max. Unit

tTCYC TCK Clock Cycle Time 50 ns

tTF TCK Clock Frequency 20 MHz

tTH TCK Clock HIGH 20 ns

tTL TCK Clock LOW 20 ns

Set-up Times

tTMSS TMS Set-up to TCK Clock Rise 5 ns

tTDIS TDI Set-up to TCK Clock Rise 5 ns

tCS Capture Set-up to TCK Rise 5 ns

Hold Times

tTMSH TMS Hold after TCK Clock Rise 5 ns

tTDIH TDI Hold after Clock Rise 5 ns

Notes:

7. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.

8. Input waveform should have a slew rate of > 1 V/ns.

9. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.

10.tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.

11. Test conditions are specified using the load in TAP AC test condit i ons. tR/tF = 1 ns.

012..

3031

Boundary Scan Register

Identification Register

012..

.106

012

Instruction Register

Bypass Register

Selection

Circuitry Selection

Circuitry

TAP Controller

TDI TDO

TCK

TMS

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 10 of 19

tCH Capture Hold after Clock Rise 5 ns

Output Times

tTDOV TCK Clock LOW to TDO Valid 10 ns

tTDOX TCK Clock LOW to TDO Invalid 0 ns

TAP Timing and Test Conditions[11]

TAP AC Switching Characteristics Over the Operating Range (continued)[10, 11]

Parameter Description Min. Max. Unit

(a)

TDO

CL= 20 pF

Z0= 50Ω

GND

1.25V

50Ω

2.5V

ALL INPUT PULSES

1.25V

Test Clock

Test Mode Select

TCK

TMS

Test Data-In

TDI

Test Data-Out

tTCYC

tTMSH

tTL

tTH

tTMSS

tTDIS tTDIH

tTDOV tTDOX

TDO

Identification Register Definitions

Instruction Field Value DescriptionCY7C1330AV25 CY7C1332AV25

Revision Number (31:29) 000 000 Version number.

Cypress Device ID (28:12) 01011110101100101 01011110101010101 Defines the type of SRAM.

Cypress JEDEC ID (11:1) 00000110100 00000110100 Allows unique identification of SRAM vendor.

ID Register Presence (0) 1 1 Indicates the presence of an ID register.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 11 of 19

Scan Register Sizes

Instruction 3 3

Bypass 1 1

ID 32 32

Boundary Scan 70 51

Instruction Codes

Instruction Code Description

EXTEST 000 Captures the Input/Output ring contents.

IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI

and TDO. This operati on does not affect SRAM operation.

SAMPLE Z 010 Captures the Input/Output contents. Places the boundary scan register betwe en

TDI and TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED 011 Do Not Use: This instruction is reserved for future use.

SAMPLE/PRELOAD 100 Captures the Input/Output ring contents. Places the boundary scan register

between TDI and TDO. Doe s not affect the SRAM operation.

RESERVED 101 Do Not Use: This instruction is reserved for future use.

RESERVED 110 Do Not Use: This instruction is reserved for future use.

BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect

SRAM operation.

Boundary Scan Order (1 Mbit x 18)

Bit # Bump ID Bit # Bump ID Bit # Bump ID

15R 187E 351H

26T 196D 363G

34P 206A 374D

46R 216C 384E

55T 225C 394G

67T 235A 404H

77P 246B 414M

86N 255B 422K

96L 263B 431L

10 7K 27 2B 44 2M

11 5L 28 3A 45 1N

12 4L 29 3C 46 2P

13 4K 30 2C 47 3T

14 4F 31 2A 48 2R

15 6H 32 1D 49 4N

16 7G 33 2E 50 2T

17 6F 34 2G 51 3R

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 12 of 19

Boundary Scan Order (512K x 36)

Bit # Bump ID Bit # Bump ID Bit # Bump ID

15R 256F 492H

24P 267E 501H

34T 276E 513G

46R 287D 524D

55T 296D 534E

67T 306A 544G

76P 316C 554H

87P 325C 564M

96N 335A 57 3L

10 7N 34 6B 58 1K

11 6M 35 5B 59 2K

12 6L 36 3B 60 1L

13 7L 37 2B 61 2L

14 6K 38 3A 62 2M

15 7K 39 3C 63 1N

16 5L 40 2C 64 2N

17 4L 41 2A 65 1P

18 4K 42 2D 66 2P

19 4F 43 1D 67 3T

20 5G 44 2E 68 2R

21 7H 45 1E 69 4N

22 6H 46 2F 70 3R

23 7G 47 2G

24 6G 48 1G

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 13 of 19

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied........................................... –55°C to +125°°C

Supply Voltage on VDD Relative to GND........–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND. .....–0.5V to +VDD

DC Voltage Applied to Outputs

in High-Z S tate[7]................................. –0.5V to VDDQ + 0.5V

DC Input Voltage[7] .............. ... ...............–0.5V to V DD + 0.5V

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage...........................................> 1500V

(per MIL-STD-883, Method 3015)

Latch-up Current.....................................................> 200 mA

Operating Range

Range Ambient

Temperature VDD VDDQ

Com’l 0°C to +70°C 2.37V to 2.63V 1.4V to 1.9V

Electrical Characteristics Over the Operating Range

DC Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Max. Unit

VDD Power Supply Voltage 2.37 2.63 V

VDDQ I/O Supply Voltage 1.4 1.9 V

VOH1 Output HIGH Voltage[12] Programmable Impedance Mode[14] VDDQ/2 VDD V

VOL1 Output LOW Voltage[13] Programmable Impedance Mode[14] VSS VDDQ/2 V

VOH2 Output HIGH Voltage IOH = –0.1 mA, Minimum Impedance Mode[15] VDDQ – 0.2 VDDQ V

VOL2 Output LOW Voltage IOL = 0.1 mA, Minimum Impedance Mode[15] VSS 0.2 V

VOH3 Output HIGH Voltage IOH = –6.0 mA, Minimum Impedance Mode[15] VDDQ – 0.4 VDDQ V

VOL3 Output LOW Voltage IOL = 6.0 mA, Minimum Impedance Mode[15] VSS 0.4 V

VIH Input HIGH Voltage VREF + 0.1 VDDQ + 0.3 V

VIL Input LOW Voltage[7] –0.3 VREF – 0.1 V

IXInput Leakage Current GND ≤ VI ≤ VDDQ –1 1 mA

IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –1 1 mA

VREF Input Reference Voltage Typical value = 0.75V 0.68 0.95 V

VIN–CLK Clock Input Reference

Voltage –0.3 VDDQ + 0.3 V

VDIF–CLK Clock Input Differential

Voltage 0.1 VDDQ + 0.3 V

VCM–CLK Clock Common Mode

Voltage Typical Value =0.75V 0.55 0.95 V

IDD VDD Operating Supply VDD = Max., IOUT = 0 mA,

f = fMAX = 1/tCYC 250 MHz 600 mA

200 MHz 550 mA

ISB1 Automatic CE

Power-Down

Current—TTL Inputs

Max. VDD, Device Deselected,

VIN > VIH or VIN < VIL

f = fMAX = 1/tCYC

250 MHz 280 mA

200 MHz 260 mA

AC Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Max. Unit

VIH Input HIGH Voltage VREF + 0.2 – V

VIL Input LOW Voltage – VREF – 0.2 V

Notes:

12.IOH = (VDDQ/2)/(RQ/5)+15% for 175Ω < RQ < 350Ω.

13.IOL = (VDDQ/2)/(RQ/5)+15% for 175Ω < RQ < 350Ω.

14.Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ.

15.Minimum Impedance Output Buffer Mode: The ZQ pin is connected directly to VSS or VDD.

16.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 14 of 19

AC Test Loads and Waveforms

Notes:

17.Tested initially and after any design or process change that may affect these parameters.

18.Unless otherwise noted, test conditions assume signal transition time of 2 V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input

pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.

Capacitance[17]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA = 25°C, f = 1 MHz,

VDD = 2.5V

VDDQ = 1.5V

5pF

CCLK Clock Input Capacitance 6 pF

CI/O Input/Output Capacitance 7 pF

Thermal Resistance[17]

Parameter Description Test Conditions BGA Typ. Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed

circuit board 19.7 °C/W

ΘJC Thermal Resistance

(Junction to Case) 6.0 °C/W

1.25V

0.25V

R = 50Ω

5pF

ALL INPUT PULSES

Device RL= 50Ω

Z0= 50Ω

VREF = 0.75V

[18]

0.75V

Under

Test

0.75V

Device

Under

Test

OUTPUT

0.75V

VREF

OUTPUT

(a)

Slew Rate = 2 V/ns

RQ =

250

Ω

(b)

RQ =

250

Ω

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 15 of 19

Switching Characteristics[18, 19, 20, 21]

Parameter Description

250 200

UnitMin. Max. Min. Max.

tPower VCC (typical) to the First Access Read or Write[22] 11ms

Clock

tCYC Clock Cycle Time 4.0 5.0 ns

FMAX Maximum Operating Frequency 250 200 MHz

tCH Clock HIGH 1.5 1.5 ns

tCL Clock LOW 1.5 1.5 ns

Output Times

tCO Data Output Valid After CLK Rise 2.0 2.25 ns

tEOV OE LOW to Output Valid[17, 19, 21] 2.0 2.25 ns

tDOH Data Output Hold After CLK Rise 0.5 0.5 ns

tCHZ Clock to High-Z[17, 18, 19, 20, 21] 2.0 2.25 ns

tCLZ Clock to Low-Z[17, 18, 19, 20, 21] 0.5 0.5 ns

tEOHZ OE HIGH to Output High-Z[18, 19, 21] 2.0 2.25 ns

tEOLZ OE LOW to Output Low-Z[18, 19, 21] 0.5 0.5 ns

Set-Up Times

tAS Address Set-Up Before CLK Rise 0.3 0.3 ns

tDS Data Input Set-Up Before CLK Rise 0.3 0.3 ns

tWES WE, BWSx Set-Up Before CLK Rise 0.3 0.3 ns

tCES Chip Select Set-Up 0.3 0.3 ns

Hold Times

tAH Address Hold After CLK Rise 0.6 0.6 ns

tDH Data Input Hold After CLK Rise 0.6 0.6 ns

tWEH WE, BWx Hold After CLK Rise 0.6 0.6 ns

tCEH Chip Select Hold After CLK Rise 0.6 0.6 ns

Notes:

19.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.

20.At any given voltage and temperature, tEOHZ is less than t EOLZ and tCHZ is less than tCLZ to el iminate bus contention between SRAMs when sharing the same

data bus. These specifications do not imp ly a bu s co ntention condition, but r efl ect parameters gu aran tee d over worst ca se user conditions. Device is designed

to achieve High-Z prior to Low-Z under the same system conditions.

21.This parameter is sampled and not 100% tested.

22.This part has a volt age reg ulator that steps do wn the volt age interna lly; tPower i s the time power ne eds to be suppl ied above VDD minimum initially be fore a read

or write operation can be initiated.

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 16 of 19

Switching Waveforms

READ/WRITE/DESELECT Sequence (OE Controlled)[23, 24, 25, 26]

Notes:

23.The combination of WE and BWSx (x = a, b, c, d for x36 and x = a, b for x18) define a write cycle (see Write Cycle Description table).

24.All chip enables need to be active in order to select the device. Any chip enable can deselect the device.

25.RAx stands for Read Address X, WAx Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X.

26.CE held LOW.

ADDRESS

Data

In/Out

tCYC

tCH tCL

RA1

tAH

tAS

tWEStWEH

tCO

= DON’T CARE = UNDEFINED

Out D2

READ

WRITE

READ

DESELECT

WRITE

READ

WRITE

DESELECT

WA2 WA5 RA6

tCLZ tDOH

Out

tCHZ

Device

originally

deselected

tDOH

Out

tDS tDH

RA3

WA7 WA8

OE/ tEOHZ tEOLZ

tEOV tEOHZ

tDS

tDH

BWSx

tWEStWEH

DESELECT

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 17 of 19

READ/WRITE/DESELECT Sequence (CE Controlled)

Switching Waveforms (continued)

CLK

tCYC

tCH tCL

tCES tCEH

= DON’T CARE = UNDEFINED

READ

WRITE

READ

DESELECT

WRITE

Deselect

READ

WRITE

DESELECT

ADDRESS

Data

In/Out

RA1

tAH

tAS

tWEStWEH

tCO

Out D2

WA2 WA5 RA6

tCLZ tDOH

Out

tCHZ

Device

originally

deselected

tDOH

Out

tDS tDH

RA3

WA7 WA8

BWSx

tWEStWEH

DESELECT

PRELIMINARY

CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 18 of 19

© Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change without notice. Cypress S em icon duct or Corpo ration assu mes no resp onsib ility for th e us e

of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be

used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypres s. Furthermore, Cypress does no t authorize its

products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypre ss

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

All product and company names mentioned in this document are trademarks of their respective ho lders.

Ordering Information

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or

visit www.cypress.com for actual products offered.

Speed

(MHz) Ordering Code Package

Diagram Package Type Operating

Range

250 CY7C1330AV25-250BGC

CY7C1332AV25-250BGC 51-85115 119-ball Fine-Pitch Ball Grid Array (14 x 22 x 2.4 mm) Commercial

CY7C1330AV25-250BGXC

CY7C1332AV25-250BGXC 51-85115 119-ball Fine-Pitch Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free

200 CY7C1330AV25-200BGC

CY7C1332AV25-200BGC 51-85115 119-ball Fine-Pitch Ball Grid Array (14 x 22 x 2.4 mm)

CY7C1330AV25-200BGXC

CY7C1332AV25-200BGXC 51-85115 119-ball Fine-Pitch Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free

Package Diagram

51-85115-*B

119-ball PBGA (14 x 22 x 2.4 mm) (51-85115)

PRELIMINARY CY7C1330AV25

CY7C1332AV25

Document No: 001-07844 Rev. *A Page 19 of 19

Document History Page

Document Title: CY7C1330AV25/CY7C1332AV25 18-Mbit (512K x 36/1Mbit x 18)

Pipelined Register-Register Late Write SRAM

Document Number: 001-07844

REV. ECN No. Issue Date Orig. of

Change Description of Change

** 469811 See ECN NXR New data sheet

*A 503690 See ECN VKN Minor change: Moved data sheet to web