MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-2H * * * * * IC Collector current ........................ 400A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 0.5 3-M4 10 Dimensions in mm 93 20.5 23.5 30.5 28 4-6.5 BX BX E C E E B 22 9 9 B 18 E 18 41.5 26 3 26 16.5 LABEL 37 30 113 7 21.5 70 10 10 90 2-M8 9 C Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V Conditions 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 400 A PC Collector dissipation TC=25C 3120 W IB Base current DC 20 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 4000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M8 Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 400 A 2500 V 8.83~10.8 N*m 90~110 kg*cm 1.96~2.94 N*m 20~30 kg*cm 0.98~1.47 N*m 10~15 kg*cm 0.98~1.47 N*m 10~15 kg*cm 870 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 8.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 8.0 mA IEBO Emitter cutoff current VEB=7V -- -- 600 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=400A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=400A, VCE=2.8V/5V 75/100 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=400A, IB1=-IB2=8A -- -- 16 s -- -- 3.0 s Transistor part -- -- 0.04 C/ W Diode part -- -- 0.175 C/ W Conductive grease applied -- -- 0.02 C/ W IC=400A, IB=8A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 800 DC CURRENT GAIN hFE IB=8A 640 IB=3A 480 IB=1A 320 IB=0.5A IB=0.2A 160 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 2.2 2.6 3.0 3.4 BASE-EMITTER VOLTAGE 10 2 7 5 3 2 3.8 10 1 7 5 4 3 2 VBE(sat) 10 0 VCE(sat) 7 5 4 3 IB=8A 2 Tj=25C Tj=125C -1 10 10 1 2 3 4 5 7 10 2 VBE (V) 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 3 ton, ts, tf (s) 5 4 3 2 IC=100A Tj=25C Tj=125C IC=400A IC=200A 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25C Tj=125C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 1 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 1.8 10 3 7 5 3 2 VCE (V) VCE=2.8V Tj=25C VCE=5.0V 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 2 7 5 4 3 2 10 4 7 5 3 2 10 1 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 2 10 0 ts 7 Tj=25C 5 Tj=125C 4 3 VCC=600V IB1=-IB2=8 A 2 tf 10 -1 7 5 4 ton 3 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 800 VCC=600V IC=400A IB1=8A Tj=25C Tj=125C 10 1 7 5 4 3 2 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts tf 10 0 10-1 2 3 4 5 7 10 0 600 IB2=-16A 500 400 300 200 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) 600 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 1000 800 VCE (V) SECOND BREAKDOWN AREA DERATING FACTOR (%) 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 0.05 Zth (j-c) (C/ W) 400 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) S S 200 1m DC 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 TIME (s) 200 DERATING FACTOR OF F. B. S. O. A. 50S 100S 10 2 7 5 3 2 COLLECTOR-EMITTER VOLTAGE 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2= -8A Tj=125C 700 10 3 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 4 3 2 10 1 TC (C) 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 4000 3500 Irr (A), Qrr (c) 3000 2500 2000 1500 1000 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) VCC=600V IB1=-IB2=8A Tj=25C Tj=125C 10 2 Irr Qrr 10 2 7 5 3 2 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 1 10 0 trr 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.20 Zth (j-c) (C/ W) 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999