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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 1
Six-pack SCALE Driver 6SD106E
for IGBTs and Power MOSFETs
Description
The SCALE drivers from
CONCEPT are based on a chip
set that was developed
specifically for the reliable
driving and safe operation of
IGBTs and power MOSFETs.
The name “SCALE” is an acronym for
the most outstanding properties of the
SCALE series of drivers:
SCALE = Scaleable, C ompact, A ll purpose, L ow cost and E asy to use.
The SCALE driver is a winning project of the competition organized by “Technology
Center Switzerland 1998”. And ABB Switzerland AG honored the development of the
SCALE driver by distinguishing it as the “best power electronics project in 1998”.
Product Highlights Applications
Suitable for IGBTs and power MOSFETs Inverters
Short circuit and overcurrent protection Motor drive technology
Extremely reliable, long service life Traction
High gate current of ±6A Railroad power supplies
Electrical isolation of 4000VAC Converters
Electrically isolated status acknowledgement Power engineering
Monitoring of power supply and self-monitoring Switched-mode power supplies
Switching frequency DC to >100kHz Radiology and laser technology
Duty cycle: 0... 100% DC/DC converter
High dv/dt immunity, guaranteed >100,000V/µs Research
Complete with DC/DC converter RF generators and converters
IGD
IGD
LDI
LDI = Logic to Driver Interface
IGD = Intelligent Gate Driver
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Data Sheet 6SD106E
Page 2 Internet: www.CT-CONCEPT.com
Block Diagram
Viso1
VDC
GND
Rg
Rg
IGD
IGD
LDI Viso1
Viso2
Viso2
Electronic Level Power
Isolation Power Level Semiconductor
Driver onInterface on
PWM
oscillator
Electrical
SCALE Driver Module
(external)
Rth
Rth
VDD
GND
Fig. 1 Block diagram shows 2 channels (i.e. one third) of the 6SD106E
The block diagram shows two channels (i.e. one third) of the 6SD106E six-pack
driver. There is only one PWM oscillator, whereas all other components are present in
triplicate.
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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 3
Pin Designation
Pin Des. Function
1 GND Ground of the power supply
2 U_SO2 Phase U, Status output channel 2
3 U_Mod Phase U, Mode input
4 U_RC2 Phase U, RC network channel 2
5 U_InB Phase U, Input B
6 U_InA Phase U, Input A
7 U_RC1 Phase U, RC network channel 1
8 U_VL Phase U, Logic level/Reset
9 U_SO1 Phase U, Status output channel 1
10 GND Ground of DC/DC converter
11 GND Ground of DC/DC converter
12 VDC +15V for DC/DC converter
13 VDC +15V for DC/DC converter
14 V_SO2 Phase V, Status output channel 2
15 V_Mod Phase V, Mode input
16 V_RC2 Phase V, RC network channel 1
17 V_InB Phase V, Input B
18 V_InA Phase V, Input A
19 V_RC1 Phase V, RC network channel 1
20 V_VL Phase V, Logic level/Reset
21 V_SO1 Phase V, Status output channel 1
22 GND Ground of the power supply
23 GND Ground of the power supply
24 VDD +15V for electronic input side
25 VDD +15V for electronic input side
26 W_SO2Phase W, Status output channel 2
27 W_ModPhase W, Mode input
28 W_RC2 Phase W, RC network channel 2
29 W_InB Phase W, Input B
30 W_InA Phase W, Input A
31 W_RC1 Phase W, RC network channel 1
32 W_VL Phase W, Logic level/Reset
33 W_SO1Phase W, Status output channel 1
34 GND Ground of the power supply
Pin Des. Function
68 U_C2 Phase U, Collector sense ch. 2
67 U_Rth2 Phase U, Reference resistor ch. 2
66 U_E2 Phase U, Emitter channel 2
65 U_G2 Phase U, Gate channel 2
64 Free
63 Free
62 U_C1 Phase U, Collector sense ch. 1
61 U_Rth1 Phase U, Reference resistor ch. 1
60 U_E1 Phase U, Emitter channel 1
59 U_G1 Phase U, Gate channel 1
58 Free
57 Free
56 V_C2 Phase V, Collector sense ch. 2
55 V_Rth2 Phase V, Reference resistor ch. 2
54 V_E2 Phase V, Emitter channel 2
53 V_G2 Phase V, Gate channel 2
52 Free
51 Free
50 V_C1 Phase V, Collector sense ch. 1
49 V_Rth1 Phase V, Reference resistor ch. 1
48 V_E1 Phase V, Emitter channel 1
47 V_G1 Phase V, Gate channel 1
46 Free
45 Free
44 W_C2 Phase W, Collector sense ch. 2
43 W_Rth2 Phase W, Reference resistor ch. 2
42 W_E2 Phase W, Emitter channel 2
41 W_G2 Phase W, Gate channel 2
40 Free
39 Free
38 W_C1 Phase W, Collector sense ch. 1
37 W_Rth1 Phase W, Reference resistor ch. 1
36 W_E1 Phase W, Emitter channel 1
35 W_G1 Phase W, Gate channel 1
Legend:
Pins with the designation “Free” are not physically present
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Data Sheet 6SD106E
Page 4 Internet: www.CT-CONCEPT.com
Mechanical Dimensions
Fig. 2 Front view (top) / Layout overview component side (bottom) 6SD106E
Grid of the aspect drawing on page 4 below: 2.54mm (100mil)
Recommended diameter of solder pad: Ø 1.6mm; diameter of drill holes: Ø 1.0mm
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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 5
Fig. 3 Side view (top) / Mechanical fixing (bottom) 6SD106E
Height X: typ. 25mm in first series (1998); typ. 16mm from 1999
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Data Sheet 6SD106E
Page 6 Internet: www.CT-CONCEPT.com
Mechanical fixing
The 6SD106E driver has two holes each 2.7mm in diameter. They allow additional
fixing of the driver for applications requiring very high resistance to shaking/vibration
(railways, traction systems, electrically-driven vehicles, etc.). See Fig. 3 (bottom).
Absolute Maximum Ratings
Parameter Test conditions min max unit
Supply voltage VDC 016 Vdc
Supply voltage VDD 016 Vdc
Logic input voltage to GND 0 VDD Vdc
Gate peak current Iout Gx to Ex -6 +6 A
Output power DC/DC converter total for 6 channels 6 W
Operating voltage continuous (see Note 8) 800 Vdc
Test voltage (50Hz/1min) inputs to outputs 4000 VAC(eff)
Operating temperature 6SD106EN (see Note 10) 0 +70 °C
6SD106E I (see Note 10) -40 +85 °C
Storage temperature all types -40 +90 °C
All data refer to +25°C and VDD = VD C = 15V unless otherwise specified
Electrical Characteristics
Power supply Test conditions min typ max unit
Nominal supply voltage VDC to GND (see Note 1) 15 Vdc
Supply current IDC without load 70 mA
Max. supply current IDC (see Note 2) 460 mA
Output power DC/DC converter (see Note 3) 6W
Efficiency ηinternal DC/DC converter 85 %
Nominal supply voltage VDD to GND 15 Vdc
Supply current IDD without load 35 mA
Supply current IDD at 25kHz switching frequency 44 mA
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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 7
Electrical Characteristics (Continuation)
Power supply monitoring Test conditions min typ max unit
Turn-on threshold Vth (see Note 4) 11.5 Vdc
Hysteresis on-/off (see Note 4) 0.7 Vdc
Logic inputs Test conditions min typ max unit
Input voltage all inputs (see Note 5) 0VDD Vdc
Timing characteristics Test conditions min typ max unit
Delay time input to output turn-on tpd(on) 300 ns
turn-off tpd(off) 350 ns
Blocking time after failure (see Note 14) 1s
Outputs Test conditions min typ max unit
Output current IG Gx to Ex (see Note 6) -6 +6 Adc
Output rise time tr(out) Gx to Ex (see Note 7) 100 ns
Output fall time tf(out) Gx to Ex (see Note 7) 80 ns
Output current SOx 1.5 mA
Output voltage rating SOx SOx to GND VDD V
Vce-Monitoring Test conditions min typ max unit
Inputs Cx to Ex 0 VDD Vdc
Electrical isolation Test conditions min typ max unit
Operating voltage continuous (see Note 8) 800 Vdc
Test voltage (50Hz/1min) (see Note 12) 4000 VAC(eff)
Partial discharge extinction volt. IEC270 (see Note 11) >1200 VAC(pk)
Creep path input-output 12.7 mm
Creep path output-output (see Note 13) 7.0/12.7 mm
Maximum DV/Dt at DV =1000V (see Note 9) 100 kV/ms
All data refer to +25°C and VDD = VD C = 15V unless otherwise specified
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Data Sheet 6SD106E
Page 8 Internet: www.CT-CONCEPT.com
Operating conditions
Operating conditions Test conditions min max unit
Operating temperature 6SD106EN (see Note 10) 0 +70 °C
6SD106E I (see Note 10) -40 +85 °C
Storage temperature all types -40 +90 °C
Footnotes to the key data
1) The drivers have a zener diode on each channel for over-voltage protection. When the feed voltage
exceeds 16V, this protection can be subject to thermal overload.
2) If the specified power consumption is exceeded, this indicates an overload of the DC/DC converter. It
should be noted that these DC/DC converters are not protected against overload.
3) This should be considered as a recommended value. Please consult the section: “Output power and
self-heating”.
4) Under-voltage monitoring for protecting the power semiconductors. The voltage refers to the local supply
voltage of each individual drive channel. However, this corresponds approximately to the voltage at
VDC with respect to GND.
5) The input levels must never exceed the limits of the supply voltage (i.e. between GND and VDD),
otherwise latch-up of the integrated circuits LDI 00I can occur. Particular care must be taken when
driving via cables or longer leads.
6) The gate current must be limited to its maximum value by a gate resistor.
7) At a load of 39nF in series with 5.6 W (typical load of a 1200V/100A IGBT).
8) Maximum continuous or repeatedly-applied DC voltage or peak value of the repeatedly-applied AC
voltage between all inputs and all outputs. However, types that have been measured and selected for
higher partial-discharge voltages (e.g. for 1700V IGBT modules) are also available (see Note 11).
9) This specification guarantees that the drive information will be transferred reliably even at a high DC-
link voltage and fastest switching operations.
10) The application-specific self-heating of the drivers - specially at high load - must be taken into account.
11) The partial discharge is not measured for the standard types. Tested and selected types with guaranteed
partial-discharge immunity can be supplied for applications with maximum requirements and higher
operating voltages (such as railroad applications).
12) The test voltage of 4000 Vac(rms)/50Hz may be applied only once during a minute. It should be noted
that with this (strictly speaking obsolete) test method, some (minor) damage occurs to the isolation layers
due to the partial discharge. Consequently, this test is not performed at CONCEPT as a series test. In the
case of repeated isolation tests (e.g. module test, equipment test, system test) the subsequent tests should
be performed with a lower test voltage: the test voltage is reduced by 400V for each additional test. The
more modern if more elaborate partial-discharge measurement is better suited than such test methods as
it is almost entirely non-destructive.
13) The first series (1988) has a creep path of 7.0mm between adjacent channels. A creep path of 12.7mm
will be implemented (with 100% mechanical compatibility) in later series.
14) The typical blocking time after an error is 1 second. If required, versions with other blocking times
may also be supplied.
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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 9
Application Hints
IMPORTANT INFORMATION
This data sheet contains only product-specific data. All data that apply
to the whole type series of SCALE drivers is given in the document
entitled: “Description and Application Manual for SCALE Drivers”. In
particular, this manual contains a detailed description of the concept of
the SCALE drivers, a description of the function of all terminal pins as
well as other important application hints.
Overview and application
The SCALE driver 6SD106E is a six-pack driver for power MOSFETs and IGBTs.
The terminal pins of the 6SD106E driver are arranged so that the layout can be kept
very simple and the logic signal flow (input signal drive circuit power transistors) is
maintained. A distance of 12.7mm is observed between the drive signal and the power
potential!
Collector sense and dimensioning of Rth
The 6SD106E six-
path driver has a
collector-sense circuit
to protect the power
semiconductors. It is
shown in Fig. 4
Its basic operating
mode can be ob-
tained from the
brochure entitled:
“Description and
Application Manual
for Scale Drivers”.
To correspond more
effectively to the turn-
on characteristic of
the IGBTs, the SCALE
Rm
V+V+
Ca
Cx
5WK[
Gx
Ex
Rthx
RGx
Dm (2 x 1N4007)
SCALE Driver Module
IGD 001
4
5
150uA1.4mA
OVERCURRENT
MEASURING
Fig. 4 Collector-sense circuit principle
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Data Sheet 6SD106E
Page 10 Internet: www.CT-CONCEPT.com
drivers do not use a static reference
voltage to compare the voltage at the
collector. Instead, the reference is
used as shown in Fig. 5.
Notes on Table 1
The values for “Vth1” and “Vth2” are
listed in Table 1 as a function of the
reference resistance Rth.
The value in the “Vth1” column cor-
responds to the voltage threshold after
the response time has elapsed.
The value in the “Vth2” column cor-
responds to the voltage which is set up
statically across the resistor Rth. This
static value is typically reached after
between 10 and 15 µs.
The value in the “VCE(off)” column
corresponds to the collector-emitter
voltage value at which the protection
function is activated when the external
circuit is used as shown in Fig. 4 with
one or two Dm diodes of type
1N4007 connected in series.
Value Rth Reaction time Vth1 Vth2 VCE(off)
22k £ 4.9ms£ 4.8V £ 3.2V 2.35V (1 Diode)
27k £ 5.7ms£ 5.6V £ 3.9V 3.05V (1 Diode)
33k £ 6.8ms£ 6.5V £ 4.7V 3.25V (2 Diodes)
39k £ 7.6ms£ 7.3V £ 5.6V 4.15V (2 Diodes)
47k £ 9ms£ 8.4V £ 6.8V 5.35V (2 Diodes)
Table 1 Reference resistor, reaction time and turn-off threshold
+Vdc
0V
Vth
Response time
Detail view
Detail
0V
Vce
Vth1
Vce Vth2
Fig. 5 Collector-sense voltage curve
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Data Sheet 6SD106E
Internet: www.IGBT-Driver.com Page 11
Output power and self-heating
The specified output power of the driver totals 6W (1W per channel). This typically
suffices to drive a 100A/1200V six-pack IGBT module with 25kHz. In the case of a
drive power of 6W, the typical input power of the driver is about 7W; the losses due
to the driver total about 1 W. Because CONCEPT cannot predict how the drivers will
be incorporated in the user’s application, no binding recommended value for self-
heating and thus for the maximum useful output power at high ambient temperatures
can be made. It is consequently recommended to check the self-heating of the system,
especially when it is used at higher temperatures.
For the calculation of the exact output power, reference should be made to
Application Note AN-9701 “IGBT drivers correctly calculated” from CONCEPT.
If you need any help, simply call our technical support
CONCEPT offers you expert help for your questions and problems:
E-Mail: support@ct-concept.com or on the Internet: www.CT-CONCEPT.com
Fax international ++41 32 / 322 22 51 (in Switzerland: 032 / 322 22 51)
Tel international ++41 32 / 322 42 36 (in Switzerland: 032 / 322 42 36)
Quite special: customized SCALE drivers
If you need a power MOSFET or IGBT driver that is not included in the delivery range,
don’t hesitate to contact CONCEPT or your CONCEPT sales partner.
CONCEPT engineers have more than 15 years experience in the development and
manufacture of intelligent drivers for power MOSFETs and IGBTs and have already
implemented a large number of customized solutions.
Exclusion Clause
CONCEPT reserves the right to make modifications to its technical data and product
specifications at any time without prior notice. The general terms and conditions of
delivery of CT-Concept Technology Ltd. apply.
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Data Sheet 6SD106E
Page 12 Internet: www.CT-CONCEPT.com
Ordering Information
Six-pack SCALE driver with ±6A gate current / ±15V gate voltage
Standard version (0...70°C) 6SD106EN
Industry version (-40...+85°C) 6SD106EI
Additional Products and Information
Drivers for high isolation voltages (i.e. railroad applications)
Please request further information
Other intelligent drivers (i.e. half-bridge drivers etc.)
Please ask for following overviews from CONCEPT (also to be found on the Internet):
“Overview of Intelligent Drivers Standard Program”
“Overview of SCALE Drivers”
Evaluation boards
Please ask for following overview from CONCEPT (also to be found on the Internet):
“Overview and Price List of Evaluation-Boards”
Manufacturer Your Distribution Partner
CT-Concept Technology Ltd.
Intelligent Power Electronics
Hauptstrasse 3
CH-2533 Leubringen / Evilard
(Switzerland)
Tel ++41 (0)32 / 322 42 36
Fax ++41 (0)32 / 322 22 51
E-Mail info@ct-concept.com
Internet www.CT-CONCEPT.com
Internet www.IGBT-Driver.com
Copyright 1998 by CT-Concept Technology Ltd. - Switzerland. All rights reserved.
We reserve the right to make any technical modifications without prior notice. Version from 17.11.98