PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
3 July 2018 Product data sheet
1. General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect up to two
signal lines from the damage caused by ESD and other transients.
2. Features and benefits
Unidirectional ESD protection of two lines
Low diode capacitance: Cd = 17 pF
Max. peak pulse power: PPP = 160 W
Low clamping voltage: VCL = 55 V
Ultra low leakage current: IRM ≤ 1 uA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.5 A
AEC-Q101 qualified
3. Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
SIM card protection
Portable electronics
Communication systems
10/100 Mbit/s Ethernet
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C [1] - 17 35 pF
VRWM reverse standoff
voltage
- - 36 V
[1] Measured from pin 1 or 2 to pin 3.
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
3 A common anode
1 2
3
TO-236AB (SOT23) 006aaa154
1 2
3
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PESD36VS2UT TO-236AB plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9
mm x 1.3 mm x 1 mm body
SOT23
7. Marking
Table 4. Marking codes
Type number Marking code[1]
PESD36VS2UT LF%
[1] % = placeholder for manufacturing site code
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 2 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPPM rated peak pulse power [1] [2] - 160 W
IPPM rated peak pulse current
tp = 8/20 µs
[1] [2] - 2.5 A
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
ESD maximum ratings
IEC 61000-4-2 (contact discharge) [3] [2] - 30 kV
machine model [2] - 400 V
VESD electrostatic discharge
voltage
MIL-STD-883 (human body model) - 8 kV
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 or 2 to pin 3.
[3] Device stressed with ten non-repetitive ESD pulses.
t (µs)
0 403010 20
001aaa630
40
80
120
IPP
(%)
0
e-t
100 % IPP; 8 µs
50 % IPP; 20 µs
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.6 ns to 1 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 3 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff
voltage
- - 36 V
VBR breakdown voltage IR = 5 mA; Tamb = 25 °C 40 44 - V
IRM reverse leakage
current
VRWM = 30 V; Tamb = 25 °C - 0.02 1 µA
Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C [1] - 17 35 pF
VCL clamping voltage IPP = 1 A; Tamb = 25 °C [1] [2] - 55 60 V
rdif differential resistance IR = 0.5 mA; Tamb = 25 °C - - 300 Ω
[1] Measured from pin 1 or 2 to pin 3.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
VR (V)
0 403010 20
006aab615
10
5
15
20
Cd
(pF)
0
f = 1 MHz; Tamb = 25 °C
Fig. 3. Diode capacitance as a function of reverse
voltage; typical values
006aaa407
-VCL -VBR -VRWM
-IRM
-IR
-IPP
V
I
P-N
- +
Fig. 4. V-I characteristics for unidirectional ESD
protection diode
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 4 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
006aaa676
-VCL -VBR -VRWM
VCL
VBR
VRWM
-IRM
IRM
-IR
IR
-IPP
IPP
-+
Fig. 5. V-I characteristics for a bidirectional ESD protection diode
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 5 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
006aab616
50 Ω
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
RG 223/U
50 Ω coax
RZ
CZ
ESD TESTER 4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
unclamped -1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped -1 kV ESD voltage waveform
(IEC61000-4-2 network)
note 1
DUT: PESD36VS2UT
vertical scale = 10 V/div
horizontal scale = 50 ns/div
Fig. 6. ESD clamping test setup and waveforms
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 6 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
10. Application information
The PESD36VS2UT is designed for the protection of up to two unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines where
the signal polarities are either postitive or negative with respect to ground. THe PESD36VS2UT
provices a surge capability of 160 W per line for an 8/20 µs waveform.
006aab617
PESD36VS2UT
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
GND
PESD36VS2UT
line 1 to be protected
GND
Fig. 7. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 7 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
12. Package outline
18-03-12Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Fig. 8. Package outline TO-236AB (SOT23)
13. Soldering
Fig. 9. Reflow soldering footprint for TO-236AB (SOT23)
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 8 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
Fig. 10. Wave soldering footprint for TO-236AB (SOT23)
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 9 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
14. Revision history
Table 7. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PESD36VS2UT_v.2 20180703 Product data sheet - PESD36VS2UT_v.1
Modifications • The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
• Legal texts have been adapted to the new company name where appropriate.
PESD36VS2UT_v.1 20090716 Product data sheet
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 10 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Limiting values — Stress above one or more limiting values (as defined in
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PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 11 / 12
Nexperia PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics.............................................................. 4
10. Application information............................................. 7
11. Test information..........................................................7
12. Package outline.......................................................... 8
13. Soldering..................................................................... 8
14. Revision history........................................................10
15. Legal information.......................................................11
© Nexperia B.V. 2018. All rights reserved
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Date of release: 3 July 2018
PESD36VS2UT All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 3 July 2018 12 / 12