Visit our website: www.e2v.com
for the latest version of the datasheet
e2v semiconductors SAS 2008
PC755/745
PowerPC 755/745 RISC Microprocessor
Datasheet
0828J–HIREL–07/08
Features
18.1SPECint95, Estimates 12.3 SPECfp95 at 400 MHz (PC755)
15.7SPECint95, 9SPECfp95 at 350 MHz (PC745)
733 MIPS at 400 MHz (PC755) at 641 MIPS at 350 MHz (PC745)
Selectable Bus Clock (12 CPU Bus Dividers up to 10x)
PD Typical 6.4W at 400 MHz, Full Operating Conditions
Nap, Doze and Sleep Modes for Power Savings
Superscalar (3 Instructions per Clock Cycle) Two Instruction + Branch
4 Beta Byte Virtual Memory, 4-GByte of Physical Memory
64-bit Data and 32-bit Address Bus Interface
32-KB Instruction and Data Cache
Six Independent Execution Units
Write-back and Write-through Operations
fINT max = 400 MHz
fBUS max = 100 MHz
Voltage I/O 2.5V/3.3V; Voltage Int 2.0V
Description
The PC755 and PC745 Power Architecture microprocessors are high-performance, low-power, 32-bit implementations of
the Power Architecture Reduced Instruction Set Computer (RISC) architecture, especially enhanced for embedded appli-
cations.
The PC755 and PC745 microprocessors differ only in that the PC755 features an enhanced, dedicated L2 cache interface
with on-chip L2 tags. The PC755 is a drop-in replacement for the award winning Power Architecture 750 microprocessor
and is footprint and user software code compatible with the MPC7400 microprocessor with AltiVec® technology. The
PC745 is a drop-in replacement for the Power Architecture 740 microprocessor and is also footprint and user software code
compatible with the Power Architecture 603e microprocessor. PC755/745 microprocessors provide on-chip debug support
and are fully JTAG-compliant.
The PC745 microprocessor is pin compatible with the TSPC603e family.
Screening
This product is manufactured in full compliance with:
HiTCE CBGA According to e2v Standards
CBGA + CI-CGA + FC-PBGA up Screenings Based upon e2v Standards
Full Military Temperature Ranges (TC = -55°C, TJ = +125°C)
Industrial Temperature Ranges (TC = -40°C, TJ = +110°C)
2
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
1. General Description
1.1 Simplified Block Diagram
The PC755 is targeted for low power systems and supports power management features such as doze,
nap, sleep, and dynamic power management. The PC755 consists of a processor core and an internal
L2 Tag combined with a dedicated L2 cache interface and a 60x bus.
Figure 1-1. PC755 Block Diagram
Additional Features
* Time Base Counter/Decrementer
* Clock Multiplier
* JTAG/COP Interface
* Thermal/Power Management
* Performance Monitor
+
+
Fetcher Branch Processing
BTIC
64-Entry
+ x : FPSCR
CR FPSCR
L2CR
CTR
LR
BHT
Data MMU
Instruction MMU
Not in the PC745
EAPA
+ x :
Instruction Unit
Unit
Instruction Queue
(6-Word)
2 Instructions
Reservation Station Reservation Station Reservation Station
Integer Unit 1 System Register
Unit
Dispatch Unit 64-Bit
(2 Instructions)
SRs
ITLB
(Shadow) IBAT
Array 32-Kbyte
I Cache
Tags
128-Bit
(4 Instructions)
Reservation Station
32-Bit
Floating-Point
Unit
Rename Buffers
(6)
FPR File
32-Bit 64-Bit 64-Bit
Reservation Station
(2-Entry)
Load/Store Unit
(EA Calculation)
Store Queue
GPR File
Rename Buffers
(6)
32-Bit
SRs
(Original)
DTLB
DBAT
Array
64-Bit
Completion Unit
Reorder Buffer
(6-Entry)
Tags 32-Kbyte
D Cache
60x Bus Interface Unit
Instruction Fetch Queue
L1 Castout Queue
Data Load Queue L2 Controller
L2 Tags
L2 Bus Interface
Unit
L2 Castout Queue
32-Bit Address Bus
32-/64-Bit Data Bus
17-Bit L2 Address Bus
64-Bit L2 Data Bus
Integer Unit 2
3
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
1.2 General Parameters
The following list provides a summary of the general parameters of the PC755:
1.3 Features
This section summarizes features of the PC755’s implementation of the Power Architecture. Major fea-
tures of the PC755 are as follows:
Branch Processing Unit
Four instructions fetched per clock
One branch processed per cycle (plus resolving 2 speculations)
Up to 1 speculative stream in execution, 1 additional speculative stream in fetch
512-entry Branch History Table (BHT) for dynamic prediction
64-entry, 4-way set associative Branch Target Instruction Cache (BTIC) for eliminating
branch delay slots
Dispatch Unit
Full hardware detection of dependencies (resolved in the execution units)
Dispatch two instructions to six independent units (system, branch, load/store, fixed-point
unit 1, fixed-point unit 2, floating-point)
Serialization control (predispatch, postdispatch, execution serialization)
Decode
Register file access
Forwarding control
Partial instruction decode
Completion
6 entry completion buffer
Instruction tracking and peak completion of two instructions per cycle
Completion of instructions in program order while supporting out-of-order instruction
execution, completion serialization and all instruction flow changes
Technology 0.22 µm CMOS, five-layer metal, 1 layer poly
Die size 6.61 mm × 7.73 mm (51 mm2)
Transistor count 6.75 million
Logic design Fully-static Packages
PC745 Surface mount 255 Plastic Ball Grid Array (PBGA)
Surface mount 255 Ceramic Ball Grid Array (Hi-TCE)
PC755 Surface mount 360 Plastic Ball Grid Array (PBGA)
Surface mount 360 Ceramic Ball Grid Array (CI-CGA, CBGA, HiTCE)
Core power supply 2V ± 100 mV DC (nominal; some parts support core voltages down to 1.8V; see
“Recommended Operating Conditions(1)” on page 16
I/O power supply 2.5V ± 100 mV DC or 3.3V ± 165 mV DC (input thresholds are configuration pin
selectable)
4
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Fixed Point Units (FXUs) that share 32 GPRs for Integer Operands
Fixed Point Unit 1 (FXU1)-multiply, divide, shift, rotate, arithmetic, logical
Fixed Point Unit 2 (FXU2)-shift, rotate, arithmetic, logical
Single-cycle arithmetic, shifts, rotates, logical
Multiply and divide support (multi-cycle)
Early out multiply
Floating-point Unit and a 32-entry FPR File
Support for IEEE®-754 standard single and double precision floating point arithmetic
Hardware support for divide
Hardware support for denormalized numbers
Single-entry reservation station
Supports non-IEEE mode for time-critical operations
System Unit
Executes CR logical instructions and miscellaneous system instructions
Special register transfer instructions
Load/Store Unit
One cycle load or store cache access (byte, half-word, word, double-word)
Effective address generation
Hits under misses (one outstanding miss)
Single-cycle unaligned access within double word boundary
Alignment, zero padding, sign extend for integer register file
Floating point internal format conversion (alignment, normalization)
Sequencing for load/store multiples and string operations
Store gathering
Cache and TLB instructions
Big and Little-endian byte addressing supported
Misaligned Little-endian supported
Level 1 Cache structure
32K, 32 bytes line, 8-way set associative instruction cache (iL1)
32K, 32 bytes line, 8-way set associative data cache (dL1)
Cache locking for both instruction and data caches, selectable by group of ways
Single-cycle cache access
Pseudo least-recently used (PLRU) replacement
Copy-back or Write Through data cache (on a page per page basis)
Supports all Power Architecture memory coherency modes
Non-Blocking instruction and data cache (one outstanding miss under hits)
No snooping of instruction cache
Level 2 (L2) Cache Interface (not implemented on PC745)
Internal L2 cache controller and tags; external data SRAMs
256K, 512K, and 1-Mbyte 2-way set associative L2 cache support
5
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Copyback or write-through data cache (on a page basis, or for all L2)
Instruction-only mode and data-only mode.
64 bytes (256K/512K) or 128 bytes (1M) sectored line size
Supports flow through (register-buffer) synchronous burst SRAMs, pipelined (register-
register) synchronous burst SRAMs (3-1-1-1 or strobeless 4-1-1-1) and pipelined (register-
register) late-write synchronous burst SRAMs
L2 configurable to direct mapped SRAM interface or split cache/direct mapped or private
memory
Core-to-L2 frequency divisors of 1, 1.5, 2, 2.5, and 3 supported
64-bit data bus
Selectable interface voltages of 2.5V and 3.3V
Parity checking on both L2 address and data
Memory Management Unit
128 entry, 2-way set associative instruction TLB
128 entry, 2-way set associative data TLB
Hardware reload for TLBs
Hardware or optional software tablewalk support
8 instruction BATs and 8 data BATs
8 SPRGs, for assistance with software tablewalks
Virtual memory support for up to 4 hexabytes (252) of virtual memory
Real memory support for up to 4 gigabytes (232) of physical memory
Bus Interface
Compatible with 60X processor interface
32-bit address bus
64-bit data bus, 32-bit mode selectable
Bus-to-core frequency multipliers of 2x, 3x, 3.5x, 4x, 4.5x, 5x, 5.5x, 6x, 6.5x, 7x, 7.5x, 8x, 10x
supported
Selectable interface voltages of 2.5V and 3.3V.
Parity checking on both address and data busses
Power Management
Low-power design with thermal requirements very similar to PC740/750.
Selectable interface voltage of 1.8V/2.0V can reduce power in output buffers (compared to
3.3V)
Three static power saving modes: doze, nap, and sleep
Dynamic power management
Testability
LSSD scan design
IEEE 1149.1 JTAG interface
Integrated Thermal Management Assist Unit
One-ship thermal sensor and control logic
Thermal Management Interrupt for software regulation of junction temperature
6
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
2. Pin Assignments
Figure 2-1 (in part A) shows the pinout of the PC745, 255PBGA and HiTCE CBGA packages as viewed
from the top surface. Part B shows the side profile of the PBGA package to indicate the direction of the
top surface view.
Figure 2-1. Pinout of the PC745, 255 PBGA and HiTCE CBGA Packages as Viewed from the Top Surface
Figure 2-2 (in part A) shows the pinout of the PC755, 360 PBGA packages as viewed from the top sur-
face. Part B shows the side profile of the PBGA package to indicate the direction of the top surface view.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Not to Scale
View
Die
Substrate Assembly
Encapsulant
Part B
Part A 12345678910 11 12 13 14 15 16
7
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 2-2. Pinout of the PC755, 360 PBGA, CBGA, HiTCE CBGA and CI-CGA Packages as Viewed
from the Top Surface
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Not to Scale
U
V
W
View
Die
Substrate Assembly
Encapsulant
Part B
Part A
1 2345678910 11 12 13 14 15 16 17 18 19
8
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
2.1 Pinout Listings
Table 2-1 provides the pinout listing for the PC745, 255 PBGA package.
Table 2-1. Pinout Listing for the PC745, 255 PBGA and HiTCE CBGA Packages
Signal Name Pin Number Active I/O
I/F Voltages Supported(1)
1.8V/2.0V 3.3V
A[0-31]
C16, E4, D13, F2, D14, G1, D15, E2, D16, D4, E13, G2, E15,
H1, E16, H2, F13, J1, F14, J2, F15, H3, F16, F4, G13, K1,
G15, K2, H16, M1, J15, P1
High I/O
AACK L2 Low Input
ABB K4 Low I/O
AP[0-3] C1, B4, B3, B2 High I/O
ARTRY J4 Low I/O
AVDD A10 2V 2V
BG L1 Low Input
BR B6 Low Output
BVSEL(3)(4)(5) B1 High Input GND 3.3V
CI E1 Low Output
CKSTP_IN D8 Low Input
CKSTP_OUT A6 Low Output
CLK_OUT D7 Output
DBB J14 Low I/O
DBG N1 Low Input
DBDIS H15 Low Input
DBWO G4 Low Input
DH[0-31]
P14, T16, R15, T15, R13, R12, P11, N11, R11, T12, T11,
R10, P9, N9, T10, R9, T9, P8, N8, R8, T8, N7, R7, T7, P6,
N6, R6, T6, R5, N5, T5, T4
High I/O
DL[0-31]
K13, K15, K16, L16, L15, L13, L14, M16, M15, M13, N16,
N15, N13, N14, P16, P15, R16, R14, T14, N10, P13, N12,
T13, P3, N3, N4, R3, T1, T2, P4, T3, R4
High I/O
DP[0-7] M2, L3, N2, L4, R1, P2, M4, R2 High I/O
DRTRY G16 Low Input
GBL F1 Low I/O
GND
C5, C12, E3, E6, E8, E9, E11, E14, F5, F7, F10, F12, G6,
G8, G9, G11, H5, H7, H10, H12, J5, J7, J10, J12, K6, K8, K9,
K11, L5, L7, L10, L12, M3, M6, M8, M9, M11, M14, P5, P12
HRESET A7 Low Input
INT B15 Low Input
L1_TSTCLK(2) D11 High Input
L2_TSTCLK(2) D12 High Input
9
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Notes: 1. OVDD supplies power to the processor bus, JTAG, and all control signals and VDD supplies power to the processor core and
the PLL (after filtering to become AVDD). These columns serve as a reference for the nominal voltage supported on a given
signal as selected by the BVSEL pin configuration of Table 5-1 on page 15 and the voltage supplied. For actual recom-
mended value of VIN or supply voltages see “Absolute Maximum Ratings(1)” on page 14.
2. These are test signals for factory use only and must be pulled up to OVDD for normal machine operation.
3. To allow for future I/O voltage changes, provide the option to connect BVSEL independently to either OVDD (selects 3.3V) or
to OGND (selects 1.8V/2.0V).
4. Uses one of 15 existing no-connects in PC745’s 255-BGA package.
LSSD_MODE(2) B10 Low Input -–
MCP C13 Low Input
NC (No-Connect) B7, B8, C3, C6, C8, D5, D6, H4, J16, A4, A5, A2, A3, B5
OVDD C7, E5, E7, E10, E12, G3, G5, G12, G14, K3, K5, K12, K14,
M5, M7, M10, M12, P7, P10 1.8V/2.0V 3.3V
PLL_CFG[0-3] A8, B9, A9, D9 High Input
QACK D3 Low Input
QREQ J3 Low Output
RSRV D1 Low Output
SMI A16 Low Input
SRESET B14 Low Input
SYSCLK C9 Input
TA H14 Low Input
TBEN C2 High Input
TBST A14 Low I/O
TCK C11 High Input
TDI(5) A11 High Input
TDO A12 High Output
TEA H13 Low Input
TLBISYNC C4 Low Input
TMS(5) B11 High Input
TRST(5) C10 Low Input
TS J13 Low I/O
TSIZ[0-2] A13, D10, B12 High Output
TT[0-4] B13, A15, B16, C14, C15 High I/O
WT D2 Low Output
VDD 2 F6, F8, F9, F11, G7, G10, H6, H8, H9, H11, J6, J8, J9, J11,
K7, K10, L6, L8, L9, L11 2V 2V
VOLTDET(6) F3 High Output
Table 2-1. Pinout Listing for the PC745, 255 PBGA and HiTCE CBGA Packages (Continued)
Signal Name Pin Number Active I/O
I/F Voltages Supported(1)
1.8V/2.0V 3.3V
10
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
5. Internal pull up on die.
6. Internally tied to GND in the PC745 255-BGA package to indicate to the power supply that a low-voltage processor is
present. This signal is not a power supply input.
Table 2-2 provides the pinout listing for the PC755, 360 PBGA, CBGA, HiTCE CBGA and CI-CGA
Table 2-2. Pinout Listing for the PC755, 360 PBGA, CBGA, HiTCE CBGA and CI-CGA Packages(8)
Signal Name Pin Number Active I/O
I/F Voltages
Supported(1)
1.8V/2.0V 3.3V
A[0-31]
A13, D2, H11, C1, B13, F2, C13, E5, D13, G7, F12, G3, G6, H2,
E2, L3, G5, L4, G4, J4, H7, E1, G2, F3, J7, M3, H3, J2, J6, K3, K2,
L2
High I/O
AACK N3 Low Input
ABB L7 Low I/O
AP[0-3] C4, C5, C6, C7 High I/O
ARTRY L6 Low I/O
AVDD A8 - - 2V 2V
BG H1 Low Input
BR E7 Low Output
BVSEL(3)(5)(6) W1 High Input GND 3.3V
CI C2 Low Output
CKSTP_IN B8 Low Input
CKSTP_OUT D7 Low Output
CLK_OUT E3 Output
DBB K5 Low I/O
DBDIS G1 Low Input
DBG K1 Low Input
DBWO D1 Low Input
DH[0-31]
W12, W11, V11, T9, W10, U9, U10, M11, M9, P8, W7, P9, W9,
R10, W6, V7, V6, U8, V9, T7, U7, R7, U6, W5, U5, W4, P7, V5, V4,
W3, U4, R5
High I/O
DL[0-31]
M6, P3, N4, N5, R3, M7, T2, N6, U2, N7, P11, V13, U12, P12, T13,
W13, U13, V10, W8, T11, U11, V12, V8, T1, P1, V1, U1, N1, R2,
V3, U3, W2
High I/O
DP[0-7] L1, P2, M2, V2, M1, N2, T3, R1 High I/O
DRTRY H6 Low Input
GBL B1 Low I/O
GND
D10, D14, D16, D4, D6, E12, E8, F4, F6, F10, F14, F16, G9, G11,
H5, H8, H10, H12, H15, J9, J11, K4, K6, K8, K10, K12, K14, K16,
L9, L11, M5, M8, M10, M12, M15, N9, N11, P4, P6, P10, P14, P16,
R8, R12, T4, T6, T10, T14, T16
––GNDGND
HRESET B6 Low Input
11
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
INT C11 Low Input
L1_TSTCLK(2) F8 High Input
L2ADDR[0-16] L17, L18, L19, M19, K18, K17, K15, J19, J18, J17, J16, H18, H17,
J14, J13, H19, G18 High Output
L2AVDD L13 2V 2V
L2CE P17 Low Output
L2CLKOUTA N15 Output
L2CLKOUTB L16 Output
L2DATA[0-63]
U14, R13, W14, W15, V15, U15, W16, V16, W17, V17, U17, W18,
V18, U18, V19, U19, T18, T17, R19, R18, R17, R15, P19, P18,
P13, N14, N13, N19, N17, M17, M13, M18, H13, G19, G16, G15,
G14, G13, F19, F18, F13, E19, E18, E17, E15, D19, D18, D17,
C18, C17, B19, B18, B17, A18, A17, A16, B16, C16, A14, A15,
C15, B14, C14, E13
High I/O
L2DP[0-7] V14, U16, T19, N18, H14, F17, C19, B15 High I/O
L2OVDD D15, E14, E16, H16, J15, L15, M16, P15, R14, R16, T15, F15 1.8V/2V 3.3V
L2SYNC_IN L14 Input
L2SYNC_OUT M14 Output
L2_TSTCLK(2) F7 High Input
L2VSEL(1)(3)(5)(6) A19 High Input GND 3.3V
L2WE N16 Low Output
L2ZZ G17 High Output
LSSD_MODE(2) F9 Low Input
MCP B11 Low Input
NC (No-Connect) B3, B4, B5, W19, K9, K114, K194––
OVDD D5, D8, D12, E4, E6, E9, E11, F5, H4, J5, L5, M4, P5, R4, R6, R9,
R11, T5, T8, T12 1.8V/2V 3.3V
PLL_CFG[0-3] A4, A5, A6, A7 High Input
QACK B2 Low Input
QREQ J3 Low Output
RSRV D3 Low Output
SMI A12 Low Input
SRESET E10 Low Input
SYSCLK H9 Input
TA F1 Low Input
TBEN A2 High Input
Table 2-2. Pinout Listing for the PC755, 360 PBGA, CBGA, HiTCE CBGA and CI-CGA Packages(8) (Continued)
Signal Name Pin Number Active I/O
I/F Voltages
Supported(1)
1.8V/2.0V 3.3V
12
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Notes: 1. OVDD supplies power to the processor bus, JTAG, and all control signals except the L2 cache controls (L2CE, L2WE, and
L2ZZ); L2OVDD supplies power to the L2 cache interface (L2ADDR[0-16], L2DATA[0-63], L2DP[0-7] and L2SYNC-OUT) and
the L2 control signals; and VDD supplies power to the processor core and the PLL and DLL (after filtering to become AVDD
and L2AVDD respectively). These columns serve as a reference for the nominal voltage supported on a given signal as
selected by the BVSEL/L2VSEL pin configurations of Table 5-1 on page 15 and the voltage supplied. For actual recom-
mended value of VIN or supply voltages see “Recommended Operating Conditions(1)” on page 16.
2. These are test signals for factory use only and must be pulled up to OVDD for normal machine operation.
3. To allow for future I/O voltage changes, provide the option to connect BVSEL and L2VSEL independently to either OVDD
(selects 3.3V) or to OGND (selects 1.8V/2.0V).
4. These pins are reserved for potential future use as additional L2 address pins.
5. Uses one of 9 existing no-connects in PC750’s 360-BGA package.
6. Internal pull up on die.
7. Internally tied to L2OVDD in the PC755 360-BGA package to indicate the power present at the L2 cache interface. This signal
is not a power supply input.
8. This is different from the PC745 255-BGA package.
TBST A11 Low I/O
TCK B10 High Input
TDI(6) B7 High Input
TDO D9 High Output
TEA J1 Low Input
TLBISYNC A3 Low Input
TMS(6) C8 High Input
TRST(6) A10 Low Input
TS K7 Low I/O
TSIZ[0-2] A9, B9, C9 High Output
TT[0-4] C10, D11, B12, C12, F11 High I/O
WT C3 Low Output
VDD G8, G10, G12, J8, J10, J12, L8, L10, L12, N8, N10, N12 2V 2V
VOLTDET(7) K13 High Output
Table 2-2. Pinout Listing for the PC755, 360 PBGA, CBGA, HiTCE CBGA and CI-CGA Packages(8) (Continued)
Signal Name Pin Number Active I/O
I/F Voltages
Supported(1)
1.8V/2.0V 3.3V
13
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
3. Signal Description
Figure 3-1. PC755 Microprocessor Signal Groups
BR
BG
ABB
TS
TT[0-4]
AP[0-3]
TBST
TS1Z[0-2]
GBL
WT
CI
AACK
ARTRY
DBG
DBWO
DBB
L2ADDR [16-0]
L2DATA [0-63]
L2DP [0-7]
L2CLK-OUT [A-B]
L2WE
A[0-31]
L2SYNC_OUT
L2SYNC_IN
INT
SMI
MCP
HRESET
CKSTP_IN
CKSTP_OUT
SYSCLK,
PLL_CFG [0-3]
4
17
64
8
Factory Test
JTAG:COP
ADDRESS
ARBITRATION
ADDRESS
START
ADDRESS
BUS
TRANSFER
ATTRIBUTE
ADDRESS
TERMINATION
DATA
ARBITRATION
L2 CACHE
L2 VSEL
ADDRESS/
DATA
L2 CACHE
CLOCK/CONTROL
INTERRUPTS
RESET
CLOCK
CONTROL
TEST INTERFACE
1
1
2
1
1
1
1
1
1
5
3
1
1
1
1
1
32
4
5
3
1
1
1
1
1
1
D[0-63]
DATA
TRANSFER D[P0-7]
DBDIS
TA
DATA
TERMINATION DRTRY
TEA
PC755B
L2AVDD
L2VDD
SRESET
1
1
RSRV
TBEN
TLBISYNC
QREQ
QACK
PROCESSOR
STATUS
CONTROL
CLK_OUT
1
1
1
1
1
1
1
1
VDD AVDD
L2CE
L2ZZ
Not supported in the PC745B
1
1
8
1
1
1
11
64
GND
OVDD
VOLTDET
14
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
4. Detailed Specifications
This specification describes the specific requirements for the microprocessor PC755, in compliance with
e2v Grenoble standard screening.
5. Applicable Documents
1) MIL-STD-883: Test methods and procedures for electronics.
2) MIL-PRF-38535 appendix A: General specifications for microcircuits.
The microcircuits are in accordance with the applicable documents and as specified herein.
5.1 Design and Construction
5.1.1 Terminal Connections
Depending on the package, the terminal connections is shown in Table 2-1 on page 8, Table 2-2 on
page 10 and Figure 3-1 on page 13.
Notes: 1. Functional and tested operating conditions are given in “Recommended Operating Conditions(1)” on page 16. Absolute max-
imum ratings are stress ratings only, and functional operation at the maximums is not guaranteed. Stresses beyond those
listed may affect device reliability or cause permanent damage to the device.
2. Caution: VIN must not exceed OVDD or L2OVDD by more than 0.3V at any time including during power-on reset.
3. Caution: L2OVDD/OVDD must not exceed VDD/AVDD/L2AVDD by more than 1.6V during normal operation. During power-on
reset and power-down sequences, L2OVDD/OVDD may exceed VDD/AVDD/L2AVDD by up to 3.3V for up to 20 ms, or by 2.5V
for up to 40 ms. Excursions beyond 3.3V or 40 ms are not supported.
4. Caution: VDD/AVDD/L2AVDD must not exceed L2OVDD/OVDD by more than 0.4V during normal operation. During power-on
reset and power-down sequences, VDD/AVDD/L2AVDD may exceed L2OVDD/OVDD by up to 1.0V for up to 20 ms, or by 0.7V
for up to 40 ms. Excursions beyond 1.0V or 40 ms are not supported.
5. This is a DC specifications only. VIN may overshoot/undershoot to a voltage and for a maximum duration as shown in Figure
5-1 on page 15.
5.1.2 Absolute Maximum Ratings(1)
Characteristic Symbol Maximum Value Unit
Core supply voltage(4) VDD -0.3 to 2.5 V
PLL supply voltage(4) AVDD -0.3 to 2.5 V
L2 DLL supply voltage(4) L2AVDD -0.3 to 2.5 V
Processor bus supply voltage(3) OVDD -0.3 to 3.6 V
L2 bus supply voltage(3) L2OVDD -0.3 to 3.6 V
Input voltage Processor bus(2)(5) VIN -0.3 to OVDD + 0.3V V
L2 Bus(2)(5) VIN -0.3 to L2OVDD + 0.3V V
JTAG Signals VIN -0.3 to 3.6 V
Storage temperature range TSTG -65/+150 °C
15
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 5-1 shows the allowable undershoot and overshoot voltage on the PC755 and PC745.
Figure 5-1. Overshoot/Undershoot Voltage
The PC755 provides several I/O voltages to support both compatibility with existing systems and migra-
tion to future systems. The PC755 core voltage must always be provided at nominal 2.0V (see
“Recommended Operating Conditions(1)” on page 16 for actual recommended core voltage). Voltage to
the L2 I/Os and Processor Interface I/Os are provided through separate sets of supply pins and may be
provided at the voltages shown in Table 5-1. The input voltage threshold for each bus is selected by
sampling the state of the voltage select pins BVSEL and L2VSEL during operation. These signals must
remain stable during part operation and cannot change. The output voltage will swing from GND to the
maximum voltage applied to the OVDD or L2OVDD power pins.
Table 5-1 describes the input threshold voltage setting.
Notes: 1. Caution: The input threshold selection must agree with the OVDD/L2OVDD voltages supplied.
2. The input threshold settings above are different for all revisions prior to Rev. 2.8 (Rev. E). For more information, contact your
local e2v sales office.
(L2) OVDD +20%
(L2) OVDD +5%
(L2) OVDD
Gnd - 1.0V
Gnd - 0.3V
Gnd
VIH
Not to exceed 10%
of tSYSCLK
VIL
Table 5-1. Input Threshold Voltage Setting
Part Revision BVSEL Signal
Processor Bus
Interface Voltage L2VSEL Signal
L2 Bus Interface
Voltage
E0 Not Available 0 Not Available
1 2.5V/3.3V 1 2.5V/3.3V
16
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Notes: 1. These are the recommended and tested operating conditions. Proper device operation outside of these conditions is not
guaranteed.
2. Revisions prior to Rev. 2.8 (Rev. E) offered different I/O voltage support.
3. 2.0V nominal.
4. 2.5V nominal.
5. 3.3V nominal.
5.1.3 Recommended Operating Conditions(1)
Characteristic
Recommended Value
Unit300 MHz, 350 MHz 400 MHz
Symbol Min Max Min Max
Core supply voltage(3) VDD 1.80 2.10 1.90 2.10 V
PLL supply voltage(3) AVDD 1.80 2.10 1.90 2.10 V
L2 DLL supply voltage(3) L2AVDD 1.80 2.10 1.90 2.10 V
Processor bus supply voltage(2)(4)(5) BVSEL = 1 OVDD
2.375 2.625 2.375 2.625 V
3.135 3.465 3.135 3.465 V
L2 bus supply voltage(2)(4)(5) L2VSEL = 1 L2OVDD
2.375 2.625 2.375 2.625 V
3.135 3.465 3.135 3.465 V
Input voltage
Processor bus VIN GND OVDD GND OVDD V
L2 Bus VIN GND L2OVDD GND L2OVDD V
JTAG Signals VIN GND OVDD GND OVDD V
Die-junction temperature Military temperature range TC = -55 TJ = 125 TC = -55 TJ = 125 °C
Industrial temperature TC = -40 TJ = 110 TC = -40 TJ = 110 °C
17
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
6. Thermal Characteristics
6.1 Package Characteristics
Table 6-1 provides the package thermal characteristics for the PC755.
Notes: 1. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) tempera-
ture, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1) with the calculated case temperature. The actual value of RθJC for the part is less than 0.1°C/W.
Note: Refer to Section 6.1.3 ”Thermal Management Information” on page 19 for more details about thermal management.
6.1.1 Package Thermal Characteristics for HiTCE
Table 6-2 provides the package thermal characteristics for the PC755, HiTCE.
Notes: 1. Simulation, no convection air flow.
2. Per JEDEC JESD51-6 with the board horizontal.
3. Per JEDEC JESD51-8
4. Per JEDEC JESD51-2 with the board horizontal.
Table 6-1. Package Thermal Characteristics
Characteristic Symbol
Value
Unit
PC755
CBGA
PC755
PBGA
PC745
PBGA
Junction-to-ambient thermal resistance, natural convection()(2) RθJA 24 31 34 °C/W
Junction-to-ambient thermal resistance, natural convection, four-layer
(2s2p) board()(3) RθJMA 17 25 26 °C/W
Junction-to-ambient thermal resistance, 200 ft./min. airflow, single-layer
(1s) board()(3) RθJMA 18 25 27 °C/W
Junction-to-ambient thermal resistance, 200 ft./min. airflow, four-layer
(2s2p) board()(3) RθJMA 14 21 22 °C/W
Junction-to-board thermal resistance(4) RθJB 81717°C/W
Junction-to-case thermal resistance(5) RθJC < 0.1 < 0.1 < 0.1 °C/W
Table 6-2. Package Thermal Characteristics for HiTCE Package
Characteristic Symbol
Value
UnitPC755 HiTCE PC745 HiTCE
Junction-to-bottom of balls(1) RθJ6.8 6.5 °C/W
Junction-to-ambient thermal resistance, natural convection,
four-layer (2s2p) board RθJMA 20.7(1)(2) 20.9(1)(4) °C/W
Junction to board thermal resistance RθJB 11.0 10.2(3) °C/W
18
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
The board designer can choose between several types of heat sinks to place on the PC755. There are
several commercially-available heat sinks for the PC755 provided by the following vendors.
For the exposed-die packaging technology, shown in “Recommended Operating Conditions(1)” on page
16, the intrinsic conduction thermal resistance paths are as follows:
The die junction-to-case (or top-of-die for exposed silicon) thermal resistance
The die junction-to-ball thermal resistance
Figure 6-1 depicts the primary heat transfer path for a package with an attached heat sink mounted to a
printed-circuit board.
Heat generated on the active side of the chip is conducted through the silicon, then through the heat sink
attach material (or thermal interface material), and finally to the heat sink where it is removed by forced-
air convection.
Since the silicon thermal resistance is quite small, for a first-order analysis, the temperature drop in the
silicon may be neglected. Thus, the heat sink attach material and the heat sink conduction/convective
thermal resistances are the dominant terms.
Figure 6-1. C4 Package with Head Sink Mounted to a Printed-circuit Board
Note the internal versus external package resistance.
Table 6-3. Package Thermal Characteristics for CI-CGA
Characteristic Symbol
Value
UnitPC755 CI-CGA
Junction to board thermal resistance RθJB 8.42 °C/W
External Resistance
External Resistance
Internal Resistance
Radiation Convection
Radiation Convection
Heat Sink
Printed ± Circuit Board
Thermal Interface Material
Package/Leads
Die Junction
Die/Package
19
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
6.1.2 Thermal Management Assistance
The PC755 incorporates a thermal management assist unit (TAU) composed of a thermal sensor, digital-
to-analog converter, comparator, control logic, and dedicated special-purpose registers (SPRs). Specifi-
cations for the thermal sensor portion of the TAU are found in Table 6-4. More information on the use of
this feature is given in the Freescale PC755 RISC Microprocessor User’s manual.
Notes: 1. The temperature is the junction temperature of the die. The thermal assist unit’s raw output does not
indicate an absolute temperature, but must be interpreted by software to derive the absolute junction
temperature. For information about the use and calibration of the TAU, see Freescale Application Note
AN1800/D, “Programming the Thermal Assist Unit in the PC750 Microprocessor”.
2. The comparator settling time value must be converted into the number of CPU clocks that need to be
written into the THRM3 SPR.
3. Guaranteed by design and characterization.
6.1.3 Thermal Management Information
This section provides thermal management information for air-cooled applications. Proper thermal con-
trol design is primarily dependent upon the system-level design-the heat sink, airflow and thermal
interface material. To reduce the die-junction temperature, heat sinks may be attached to the package
by several methods-adhesive, spring clip to holes in the printed-circuit board or package, and mounting
clip and screw assembly; see Figure 6-2. This spring force should not exceed 5.5 pounds of force.
Figure 6-2. Package Exploded Cross-Sectional View with Several Heat Sink Options
Ultimately, the final selection of an appropriate heat sink depends on many factors, such as thermal per-
formance at a given air velocity, spatial volume, mass, attachment method, assembly, and cost.
Table 6-4. Thermal Sensor Specifications at Recommended Operating Conditions
(see “Recommended Operating Conditions(1)” on page 16)
Characteristic Min Max Unit
Temperature range(1) 0 127 °C
Comparator settling time(2)(3) 20 s
Resolution(3) 4–°C
Accuracy(3) -12 +12 °C
Adhesive
or
Thermal Interface Material
Heat Sink
Heat Sink
Clip
Printed ± Circuit Board Option
BGA Package
20
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
6.1.4 Adhesives and Thermal Interface Materials
Figure 6-3. Thermal Performance of Select Thermal Interface Material
A thermal interface material is recommended at the package lid-to-heat sink interface to minimize the
thermal contact resistance. For those applications where the heat sink is attached by spring clip mecha-
nism, Figure 6-3 shows the thermal performance of three thin-sheet thermal-interface materials
(silicone, graphite/oil, floroether oil), a bare joint, and a joint with thermal grease as a function of contact
pressure. As shown, the performance of these thermal interface materials improves with increasing con-
tact pressure. The use of thermal grease significantly reduces the interface thermal resistance. That is,
the bare joint results in a thermal resistance approximately 7 times greater than the thermal grease joint.
Heat sinks are attached to the package by means of a spring clip to holes in the printed-circuit board
(see Figure 6-2 on page 19). This spring force should not exceed 5.5 pounds of force. Therefore, the
synthetic grease offers the best thermal performance, considering the low interface pressure.
The board designer can choose between several types of thermal interface. Heat sink adhesive materi-
als should be selected based upon high conductivity, yet adequate mechanical strength to meet
equipment shock/vibration requirements.
0
0.5
1
1.5
2Silicone Sheet (0.006 inch)
Bare Joint
Floroether Oil Sheet (0.007 inch)
Graphite/Oil Sheet (0.005 inch)
Synthetic Grease
Contact Pressure (psi)
Specific Thermal Resistance (Kin2/W)
0 1020304050607080
21
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
6.1.5 Heat Sink Selection Example
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
TJ = TA + TR + (θJC + θINT + θSA) × PD
Where:
TJ is the die-junction temperature
TA is the inlet cabinet ambient temperature
TR is the air temperature rise within the computer cabinet
θJC is the junction-to-case thermal resistance
θINT is the adhesive or interface material thermal resistance
θSA is the heat sink base-to-ambient thermal resistance
PD is the power dissipated by the device
During operation the die-junction temperatures (TJ) should be maintained less than the value specified in
“Recommended Operating Conditions(1)” on page 16. The temperature of the air cooling the component
greatly depends upon the ambient inlet air temperature and the air temperature rise within the electronic
cabinet. An electronic cabinet inlet-air temperature (TA) may range from 30 to 40°C. The air temperature
rise within a cabinet (TR) may be in the range of 5 to 10°C. The thermal resistance of the thermal inter-
face material (θINT) is typically about 1°C/W. Assuming a TA of 30°C, a TR of 5oC, a CBGA package θJC =
0.03, and a power consumption (PD) of 5.0 watts, the following expression for TJ is obtained:
Die-junction temperature: TJ = 30°C + 5°C + (0.03°C/W + 1.0°C/W + θsa) × 5.0 W
For a Thermalloy heat sink #2328B, the heat sink-to-ambient thermal resistance (θsa) versus airflow
velocity is shown in Figure 6-4.
Figure 6-4. Thermalloy #2328B Heat Sink-to-Ambient Thermal Resistance Versus Airflow Velocity
1
3
5
7
8
0 0.5 1 1.5 2 2.5 3 3.5
Thermalloy #2328B Pin±fin Heat Sink
Approach Air Velocity (m/s)
(25 x28 x 15 mm)
2
4
6
Heat Sink Thermal Resistance °C/W)
22
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Assuming an air velocity of 0.5 m/s, we have an effective Rsa of 7°C/W, thus
TJ = 30°C + 5°C+ (0.03°C/W +1.0°C/W + 7°C/W) × 5.0 W
resulting in a die-junction temperature of approximately 81°C which is well within the maximum operating
temperature of the component.
Other heat sinks offered by Chip Coolers, IERC, Thermalloy, Wakefield Engineering, and Aavid Engi-
neering offer different heat sink-to-ambient thermal resistances, and may or may not need air flow.
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are a common fig-
ure-of-merit used for comparing the thermal performance of various microelectronic packaging
technologies, one should exercise caution when only using this metric in determining thermal manage-
ment because no single parameter can adequately describe three-dimensional heat flow. The final die-
junction operating temperature, is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component’s power consumption, a
number of factors affect the final operating die-junction temperature — airflow, board population (local
heat flux of adjacent components), heat sink efficiency, heat sink attach, heat sink placement, next-level
interconnect technology, system air temperature rise, altitude, etc.
Due to the complexity and the many variations of system-level boundary conditions for today’s micro-
electronic equipment, the combined effects of the heat transfer mechanisms (radiation, convection and
conduction) may vary widely. For these reasons, we recommend using conjugate heat transfer models
for the board, as well as, system-level designs. To expedite system-level thermal analysis, several “com-
pact” thermal-package models are available within FLOTHERM®. These are available upon request.
7. Power consideration
7.1 Power management
The PC755 provides four power modes, selectable by setting the appropriate control bits in the MSR and
HIDO registers. The four power modes are as follows:
Full-power: This is the default power state of the PC755. The PC755 is fully powered and the internal
functional units operate at the full processor clock speed. If the dynamic power management mode is
enabled, functional units that are idle will automatically enter a low-power state without affecting
performance, software execution, or external hardware.
Doze: All the functional units of the PC755 are disabled except for the time base/decrementer
registers and the bus snooping logic. When the processor is in doze mode, an external asynchronous
interrupt, a system management interrupt, a decrementer exception, a hard or soft reset, or machine
check brings the PC755 into the full-power state. The PC755 in doze mode maintains the PLL in a
fully powered state and locked to the system external clock input (SYSCLK) so a transition to the full-
power state takes only a few processor clock cycles.
Nap: The nap mode further reduces power consumption by disabling bus snooping, leaving only the
time base register and the PLL in a powered state. The PC755 returns to the full-power state upon
receipt of an external asynchronous interrupt, a system management interrupt, a decrementer
exception, a hard or soft reset, or a machine check input (MCP). A return to full-power state from a
nap state takes only a few processor clock cycles.
When the processor is in nap mode, if QACK is negated, the processor is put in doze mode to
support snooping.
23
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Sleep: Sleep mode minimizes power consumption by disabling all internal functional units, after which
external system logic may disable the PPL and SUSCLK. Returning the PC755 to the full-power state
requires the enabling of the PPL and SYSCLK, followed by the assertion of an external asynchronous
interrupt, a system management interrupt, a hard or soft reset, or a machine check input (MCP)
signal after the time required to relock the PPL.
7.2 Power Dissipation
Notes: 1. These values apply for all valid processor bus and L2 bus ratios. The values do not include I/O supply
power (OVDD and L2OVDD) or PLL/DLL supply power (AVDD and L2AVDD). OVDD and L2OVDD power is
system dependent, but is typically < 10% of VDD power. Worst case power consumption for AVDD = 15
mW and L2AVDD = 15 mW.
2. Maximum power is measured at nominal VDD (see “Recommended Operating Conditions(1)” on page
16) while running an entirely cache-resident, contrived sequence of instructions which keep the execu-
tion units maximally busy.
3. Typical power is an average value measured at the nominal recommended VDD (see “Recommended
Operating Conditions(1)” on page 16) and 65×C in a system while running a typical code sequence.
4. Not 100% tested. Characterized and periodically sampled.
Table 7-1. Power Consumption for PC755
Processor (CPU) Frequency
Unit300 MHz 350 MHz 400 MHz
Full-Power Mode
Typical(1)(3)(4) 3.1 3.6 5.4 W
Maximum(1)(2) 4.5 6 8 W
Doze Mode
Maximum(1)(2)(4) 1.822.3W
Nap Mode
Maximum(1)(2)(4) 111W
Sleep Mode
Maximum(1)(2)(4) 550 550 550 mW
Sleep Mode-PLL and DLL Disabled
Maximum(1)(2) 510 510 510 mW
24
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
8. Electrical Characteristics
8.1 Static Characteristics
Notes: 1. Nominal voltages; See “Recommended Operating Conditions(1)” on page 16.
2. For processor bus signals, the reference is OVDD while L2OVDD is the reference for the L2 bus signals.
3. Excludes test signals (LSSD_MODE, L1_TSTCLK, L2_TSTCLK) and IEEE 1149.1 boundary scan (JTAG) signals.
4. Capacitance is periodically sampled rather than 100% tested.
5. The leakage is measured for nominal OVDD and VDD, or both OVDD and VDD must vary in the same direction (for example,
both OVDD and VDD vary by either +5% or -5%).
8.2 Dynamic Characteristics
After fabrication, parts are sorted by maximum processor core frequency as shown in “Clock AC Specifi-
cations” on page 25 and tested for conformance to the AC specifications for that frequency. These
specifications are for 275, 300, 333 MHz processor core frequencies. The processor core frequency is
determined by the bus (SYSCLK) frequency and the settings of the PLL_CFG[0-3] signals. Parts are
sold by maximum processor core frequency.
Table 8-1. DC Electrical Specifications at Recommended Operating Conditions (see “Recommended Operating Condi-
tions(1)” on page 16)
Characteristic
Nominal bus
Voltage(1) Symbol Min Max Unit
Input high voltage (all inputs except SYSLCK)(2)(3) 2.5 VIH 1.6 (L2)OVDD + 0.3 V
3.3 VIH 2 (L2)OVDD + 0.3 V
Input low voltage (all inputs except SYSLCK)(2) 2.5 VIL -0.3 0.6 V
3.3 VIL -0.3 0.8 V
SYSCLK input high voltage 2.5 KVIH 1.8 OVDD + 0.3 V
3.3 KVIH 2.4 OVDD + 0.3 V
SYSCLK input low voltage 2.5 KVIL -0.3 0.4 V
3.3 KVIL -0.3 0.4 V
Input leakage current, (2)(3)
VIN = L2OVDD/OVDD
Iin –10µA
Hi-Z (off-state) leakage current, (2)(3)(5)
VIN = L2OVDD/OVDD
ITSI –10µA
Output high voltage, IOH = -6 mA 2.5 VOH 1.7 V
3.3 VOH 2.4 V
Output low voltage, IOL = 6 mA 2.5 VOL –0.45V
3.3 VOL –0.4V
Capacitance, VIN = 0V, f = 1 MHz (3)(4) Cin –5pF
25
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
8.2.1 Clock AC Specifications
Table 8-2 provides the clock AC timing specifications as defined in “Absolute Maximum Ratings(1)” on
page 14.
Notes: 1. Caution: The SYSCLK frequency and PLL_CFG[0-3] settings must be chosen such that the resulting SYSCLK (bus) fre-
quency, CPU (core) frequency, and PLL (VCO) frequency do not exceed their respective maximum or minimum operating
frequencies. Refer to the PLL_CFG[0-3] signal description in Table 9-1 on page 39,” for valid PLL_CFG[0-3] settings.
2. Rise and fall times measurements are now specified in terms of slew rates, rather than time to account for selectable I/O bus
interface levels. The minimum slew rate of 1v/ns is equivalent to a 2ns maximum rise/fall time measured at 0.4V and 2.4V or
a rise/fall time of 1ns measured at 0.4V to 1.4V.
3. Timing is guaranteed by design and characterization.
4. This represents total input jitter – short term and long term combined and is guaranteed by design.
5. Relock timing is guaranteed by design and characterization. PLL-relock time is the maximum amount of time required for
PLL lock after a stable VDD and SYSCLK are reached during the power-on reset sequence. This specification also applies
when the PLL has been disabled and subsequently re-enabled during sleep mode. Also note that HRESET must be held
asserted for a minimum of 255 bus clocks after the PLL-relock time during the power-on reset sequence.
Figure 8-1 provides the SYSCLK input timing diagram.
Figure 8-1. SYSCLK Input Timing Diagram
Table 8-2. Clock AC Timing Specifications at Recommended Operating Conditions (See “Recommended Operating
Conditions(1)” on page 16)
Characteristic Symbol
Maximum Processor Core Frequency
Unit
300 MHz 350 MHz 400 MHz
Min Max Min Max Min Max
Processor frequency(1) fcore 200 300 200 350 200 400 MHz
VCO frequency(1) fVCO 400 600 400 700 400 800 MHz
SYSCLK frequency(1) fSYSCLK 25 100 25 100 25 100 MHz
SYSCLK cycle time tSYSCLK 10 40 10 40 10 40 ns
SYSCLK rise and fall time(2) tKR & tKF –2–2–2 ns
tKR & tKF –1.4–1.4–1.4 ns
SYSCLK duty cycle measured at OVDD/2(3) tKHKL/tSYSCLK 40 60 40 60 40 60 %
SYSCLK jitter(3)(4) 150 150 150 ps
Internal PLL relock time(3)(5) –100–100–100 µs
SYSCLK VMVMVM
KVIH
KVIL
VM = Midpoint Voltage (OVDD/2)
tSYSCLK
tKR tKF
tKHKL
26
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
8.2.1.1 Processor Bus AC Specifications
Table 8-3 on page 26 provides the processor bus AC timing specifications for the PC755 as defined in
Figure 8-2 on page 26 and Figure 8-4 on page 28. Timing specifications for the L2 bus are provided in
“L2 Clock AC Specifications” on page 28.
Notes: 1. All input specifications are measured from the midpoint of the signal in question to the midpoint of the rising edge of the input
SYSCLK. All output specifications are measured from the midpoint of the rising edge of SYSCLK to the midpoint of the sig-
nal in question. All output timings assume a purely resistive 50 load (See Figure 8-2). Input and output timings are
measured at the pin; time-of-flight delays must be added for trace lengths, vias, and connectors in the system.
2. THe symbology used for timing specifications herein follows the pattern of t(signal)(state)(reference)(state) for inputs and
t(reference)(state)(signal)(state) for outputs. For example, tIVKH symbolizes the time input signals (I) reach the valid state (V) relative to
the SYSCLK reference (K) going to the high (H) state or input setup time. And tKHOV symbolizes the time from SYSCLK(K)
going highs) until outputs (O) are valid (V) or output valid time. Input hold time can be read as the time that the input signal
(I) went invalid (X) with respect to the rising clock edge (KH) - note the position of the reference and its state for inputs and
output hold time can be read as the time from the rising edge (KH) until the output went invalid (OX). For additional explana-
tion of AC timing specifications in Freescale Power Architecture microprocessors, see the application note “Understanding
AC Timing Specifications for Power Architecture Microprocessors.
3. The setup and hold time is with respect to the rising edge of HRESET (see Figure 8-2).
4. This specification is for configuration mode select only. Also note that the HRESET must be held asserted for a minimum of
255 bus clocks after the PLL re-lock time during the power-on reset sequence.
5. tSYSCLK is the period of the external clock (SYSCLK) in nanoseconds (ns). The numbers given in the table must be multiplied
by the period of SYSCLK to compute the actual time duration (in nanoseconds) of the parameter in question.
6. Mode select signals are BVSEL, L2VSEL, PLL_CFG[0-3]
7. Guaranteed by design and characterization.
8. Bus mode select pins must remain stable during operation. Changing the logic states of BVSEL or L2VSEL during operation
will cause the bus mode voltage selection to change. Changing the logic states of the PLL_CFG pins during operation will
cause the PLL division ratio selection to change. Both of these conditions are considered outside the specification and are
not supported. Once HRESET is negated the states of the bus mode selection pins must remain stable.
Figure 8-2 provides the mode select input timing diagram for the PC755.
Figure 8-2. Mode Input Timing Diagram
Table 8-3. Processor Bus Mode Selection AC Timing Specifications(1)
At VDD = AVDD = 2.0V 100 mV; -55 TJ +125°C, OVDD = 3.3V 165 mV and OVDD = 1.8V ± 100 mV and
OVDD = 2.0V 100 mV
Parameter
Symbols(2) All Speed Grades
UnitMin Max
Mode select input setup to HRESET(3)(4)(5)(6)(7) tMVRH 8–t
SYSCLk
HRESET to mode select input hold(3)(4)(6)(7)(8) tMXRH 0–ns
HRESET
Mode Signals
VM
tMVRH tMXRH
VM = Midpoint Voltage (OVDD/2)
27
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 8-3 provides the AC test load for the PC755.
Figure 8-3. AC Test Load
Notes: 1. Revisions prior to Rev 2.8 (Rev E) were limited in performance and did not conform to this specification. Contact your local
Freescale sales office for more information.
2. Guaranteed by design and characterization.
3. tSYSCLK is the period of the external clock (SYSCLK) in nanoseconds (ns). The numbers given in the table must be multiplied
by the period of SYSCLK to compute the actual time duration (in ns) of the parameter in question.
4. Per the 60x bus protocol, TS, ABB and DBB are driven only by the currently active bus master. They are asserted low then
precharged high before returning to high-Z as shown in Figure 6-1 on page 18. The nominal precharge width for TS, ABB or
DBB is 0.5 × tSYSCLK, i.e. less than the minimum tSYSCLK period, to ensure that another master asserting TS, ABB, or DBB on the
following clock will not contend with the precharge. Output valid and output hold timing is tested for the signal asserted. Out-
put valid time is tested for precharge.The high-Z behavior is guaranteed by design.
5. Per the 60x bus protocol, ARTRY can be driven by multiple bus masters through the clock period immediately following
AACK. Bus contention is not an issue since any master asserting ARTRY will be driving it low. Any master asserting it low in
the first clock following AACK will then go to high-Z for one clock before precharging it high during the second cycle after the
assertion of AACK. The nominal precharge width for ARTRY is 1.0 tSYSCLK; i.e., it should be high-Z as shown in Figure 6-1 on
page 18 before the first opportunity for another master to assert ARTRY. Output valid and output hold timing is tested for the
signal asserted. Output valid time is tested for precharge. The high-Z and precharge behavior is guaranteed by design.
OVDD/2
OUTPUT Z0 = 50
RL = 50
Table 8-4. Processor Bus AC Timing Specifications(1) at Recommended Operating Conditions
Parameter Symbols
All Speed Grades
UnitMin Max
Setup Times: All Inputs tIVKH 2.5 ns
Input Hold Times: TLBISYNC, MCP, SMI tIXKH 0.6 ns
Input Hold Times: All Inputs, except TLBISYNC, MCP, SMI tIXKH 0.2 ns
Valid Times: All Outputs tKHOV –4.1ns
Output Hold Times: All Outputs tKHOX 1–ns
SYSCLK to Output Enable(2) tKHOE 0.5 ns
SYSCLK to Output High Impedance (all except ABB, ARTRY, DBB)(2) tKHOZ –6ns
SYSCLK to ABB, DBB High Impedance After Precharge(2)(3)(4) tKHABPZ –1t
SYSCLK
Maximum Delay to ARTRY Precharge(2)(3)(5) tKHARP –1t
SYSCLK
SYSCLK to ARTRY High Impedance After Precharge(2)(3)(5) tKHARPZ –2t
SYSCLK
28
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Figure 8-4 provides the input/output timing diagram for the PC755.
Figure 8-4. Input/Output Timing Diagram
8.2.1.2 L2 Clock AC Specifications
The L2CLK frequency is programmed by the L2 Configuration Register (L2CR[4:6]) core-to-L2 divisor
ratio. See Table 8-5 on page 29 for example core and L2 frequencies at various divisors. Table 8-5 pro-
vides the potential range of L2CLK output AC timing specifications as defined in Figure 8-5 on page 30.
The minimum L2CLK frequency of Table 8-5 is specified by the maximum delay of the internal DLL. The
variable-tap DLL introduces up to a full clock period delay in the L2CLKOUTA, L2CLKOUTB, and
L2SYNC_OUT signals so that the returning L2SYNC_IN signal is phase aligned with the next core clock
(divided by the L2 divisor ratio). Do not choose a core-to-L2 divisor which results in an L2 frequency
below this minimum, or the L2CLKOUT signals provided for SRAM clocking will not be phase aligned
with the PC755 core clock at the SRAMs.
The maximum L2CLK frequency shown in Table 8-5 is the core frequency divided by one. Very few L2
SRAM designs will be able to operate in this mode. Most designs will select a greater core-to-L2 divisor
to provide a longer L2CLK period for read and write access to the L2 SRAMs. The maximum L2CLK fre-
quency for any application of the PC755 will be a function of the AC timings of the PC755, the AC timings
for the SRAM, bus loading, and printed circuit board trace length.
Freescale is similarly limited by system constraints and cannot perform tests of the L2 interface on a
socketed part on a functional tester at the maximum frequencies of Table 8-5. Therefore functional oper-
ation and AC timing information are tested at core-to-L2 divisors of 2 or greater. Functionality of core-to-
L2 divisors of 1 or 1.5 is verified at less than maximum rated frequencies.
SYSCLK
All Inputs
VM
VM
All Outputs
(Except TS, ABB,
ARTRY, DBB)
TRYAR
VM
tIVKH tIXKH
tKHOE
tKHOV tKHOX
tKHABPZ
tKHOV
tKHOX
tKHOZ
tKHARPZ
tKHOV
tKHOX
tKHARP
tKHOV
tKHOZ
VM = Midpoint Voltage (OVDD/2 or VIN/2)
TS, ABB, DBB
29
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
L2 input and output signals are latched or enabled respectively by the internal L2CLK (which is SYSCLK
multiplied up to the core frequency and divided down to the L2CLK frequency). In other words, the AC
timings of Table 8-6 on page 31 and Table 8-7 on page 32 are entirely independent of L2SYNC_IN. In a
closed loop system, where L2SYNC_IN is driven through the board trace by L2SYNC_OUT,
L2SYNC_IN only controls the output phase of L2CLKOUTA and L2CLKOUTB which are used to latch or
enable data at the SRAMs. However, since in a closed loop system L2SYNC_IN is held in phase align-
ment with the internal L2CLK, the signals of Table 8-6 and Table 8-7 are referenced to this signal rather
than the not-externally-visible internal L2CLK. During manufacturing test, these times are actually mea-
sured relative to SYSCLK.
The L2SYNC_OUT signal is intended to be routed halfway out to the SRAMs and then returned to the
L2SYNC_IN input of the PC755 to synchronize L2CLKOUT at the SRAM with the processor’s internal
clock. L2CLKOUT at the SRAM can be offset forward or backward in time by shortening or lengthening
the routing of L2SYNC_OUT to L2SYNC_IN. See Freescale Application Note AN179/D “Power Architec-
ture Backside L2 Timing Analysis for the PCB Design Engineer.”
The L2CLKOUTA and L2CLKOUTB signals should not have more than two loads.
Notes: 1. L2CLK outputs are L2CLK_OUTA, L2CLK_OUTB, L2CLK_OUT and L2SYNC_OUT pins. The L2CLK frequency to core fre-
quency settings must be chosen so that the resulting L2CLK frequency and core frequency do not exceed their respective
maximum or minimum operating frequencies. The maximum L2LCK frequency will be system dependent. L2CLK_OUTA and
L2CLK_OUTB must have equal loading.
2. The nominal duty cycle of the L2CLK is 50% measured at midpoint voltage.
3. The DLL re-lock time is specified in terms of L2CLKs. The number in the table must be multiplied by the period of L2CLK to
compute the actual time duration in nanoseconds. Re-lock timing is guaranteed by design and characterization.
4. The L2CR[L2SL] bit should be set for L2CLK frequencies less than 110 MHz. This adds more delay to each tap of the DLL.
5. Allowable skew between L2SYNC_OUT and L2SYNC_IN.
6. This output jitter number represents the maximum delay of one tap forward or one tap back from the current DLL tap as the
phase comparator seeks to minimize the phase difference between L2SYNC_IN and the internal L2CLK. This number must
be comprehended in the L2 timing analysis. The input jitter on SYSCLK affects L2CLKOUT and the L2 address/data/control
signals equally and therefore is already comprehended in the AC timing and does not have to be considered in the L2 timing
analysis.
7. Guaranteed by design.
Table 8-5. L2CLK Output AC Timing Specification. At VDD = AVDD = 2.0V 100 mV; -55 TJ +125°C, OVDD = 3.3V
165 mV and OVDD = 1.8V 100 mV and OVDD = 2.0V 100 mV
Parameter Symbols
All Speed Grades
UnitMin Max
L2CLK frequency(1)(4) f L2CLK 80 450 MHz
L2CLK cycle time t L2CLK 2.5 12.5 ns
L2CLK duty cycle(2)(7) tCHCL/tL2CLK 45 55 %
Internal DLL-relock time(3)(7) 640 L2CLK
DLL capture window(5)(7) 0 10 ns
L2CLKOUT output-to-output skew(6)(7) tL2CSKW –50ps
L2CLKOUT output jitter(6)(7) ±150 ps
30
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
The L2CLK_OUT timing diagram is shown in Figure 8-5.
Figure 8-5. L2CLK_OUT Output Timing Diagram
L2CLK_OUTA
L2CLK_OUTB
L2 Differential Clock Mode
L2 Single-Ended Clock Mode
L2SYNC_OUT
L2CLK_OUTA VM
tL2CR tL2CF
VM
VM
VM
L2CLK_OUTB
VMVM
VM
VM
VM
L2SYNC_OUT
VM VM VM
VM VM VM
VM
VM
tL2CSKW
tL2CLK
tL2CLK
tCHCL
tCHCL
VM = Midpoint Voltage (L2OVDD/2)
31
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
8.2.1.3 L2 Bus Input AC Specifications
Table 8-6 provides the L2 bus interface AC timing specifications for the PC755 as defined in Figure 8-6
on page 32 and Figure 8-7 on page 32 for the loading conditions described in Figure 8-8 on page 32.
Notes: 1. Rise and fall times for the L2SYNC_IN input are measured from 20% to 80% of L2OVDD.
2. All input specifications are measured from the midpoint of the signal in question to the midpoint voltage
of the rising edge of the input L2SYNC_IN (see Figure 6-3 on page 20). Input timings are measured at
the pins.
3. All output specifications are measured from the midpoint voltage of the rising edge of L2SYNC_IN to
the midpoint of the signal in question. The output timings are measured at the pins. All output timings
assume a purely resistive 50 load (See Figure 8-1 on page 25).
4. The outputs are valid for both single-ended and differential L2CLK modes. For pipelined registered syn-
chronous BurstRAMs, L2CR[14-15] = 01 or 10 is recommended. For pipelined late write synchronous
BurstRAMs, L2CR[14-15] = 11 is recommended.
5. Guaranteed by design and characterization.
6. Revisions prior to Rev 2.8 (Rev E) were limited in performance.and did not conform to this specification.
Contact your local e2v sales office for more information.
Table 8-6. L2 Bus Interface AC Timing Specifications at Recommended Operating Conditions
Parameter Symbol
All Speed Grades
UnitMin Max
L2SYNC_IN rise and Fall Time(1) tL2CR & tL2CF –1.0ns
Setup Times: Data and Parity(2) tDVL2CH 1.2 - ns
Input Hold Times: Data and Parity(2) tDXL2CH 0-ns
Valid Times: (3)(4)
All Outputs when L2CR[14-15] = 00
All Outputs when L2CR[14-15] = 01
All Outputs when L2CR[14-15] = 10
All Outputs when L2CR[14-15] = 11
tL2CHOV
-
-
-
-
3.1
3.2
3.3
3.7
ns
Output Hold Times: (3)
All Outputs when L2CR[14-15] = 00
All Outputs when L2CR[14-15] = 01
All Outputs when L2CR[14-15] = 10
All Outputs when L2CR[14-15] = 11
tL2CHOX
0.5
0.7
0.9
1.1
-
-
-
-
ns
L2SYNC_IN to High Impedance:(3)(5)
All Outputs when L2CR[14-15] = 00
All Outputs when L2CR[14-15] = 01
All Outputs when L2CR[14-15] = 10
All Outputs when L2CR[14-15] = 11
tL2CHOZ
-
-
-
-
2.4
2.6
2.8
3.0
ns
32
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Figure 8-6 shows the L2 bus input timing diagrams for the PC755.
Figure 8-6. L2 Bus Input Timing Diagrams
Figure 8-7 shows the L2 bus output timing diagrams for the PC755.
Figure 8-7. L2 Bus Output Timing Diagrams
Figure 8-8 provides the AC test load for L2 interface of the PC755.
Figure 8-8. AC Test Load for the L2 Interface
8.2.2 IEEE 1149.1 AC Timing Specifications
Table 8-7 provides the IEEE 1149.1 (JTAG) AC timing specifications as defined in Figure 8-9 on page
33, Figure 8-10 on page 33, Figure 8-11 on page 34, and Figure 8-12 on page 34.
L2SYNC_IN VM
VM = Midpoint Voltage (L2OVDD/2)
tDVL2CH tDXL2CH
tL2CR tL2CF
L2 Data and Data
Parity Inputs
L2SYNC_IN VM
VM = Midpoint Voltage (L2OVDD/2)
VM
L2DATA BUS
tL2CHOX
tL2CHOZ
tL2CHOV
All Outputs
Output L2OVdd/2
RL = 50
Z0 = 50
Table 8-7. JTAG AC Timing Specifications (Independent of SYSCLK)(1)
Parameter Symbol Min Max Unit
TCK Frequency of operation fTCLK 016MHz
TCK Cycle time fTCLK 62.5 - ns
TCK Clock pulse width measured at 1.4V tJHJL 31 - ns
TCK Rise and fall times tJR & tJF 02ns
TRST Assert time(2) tTRST 25 - ns
33
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Notes: 1. All outputs are measured from the midpoint voltage of the falling/rising edge of TCLK to the midpoint of
the signal in question. The output timings are measured at the pins. All output timings assume a purely
resistive 50 load (See Figure 8-9). Time-of-flight delays must be added for trace lengths, vias, and
connectors in the system.
2. TRST is an asynchronous level sensitive signal. The setup time is for test purposes only.
3. Non-JTAG signal input timing with respect to TCK.
4. Non-JTAG signal output timing with respect to TCK.
5. Guaranteed by design and characterization.
Figure 8-9 provides the AC test load for TDO and the boundary-scan outputs of the PC755.
Figure 8-9. Alternate AC Test Load for the JTAG Interface
Figure 8-10 provides the JTAG clock input timing diagram.
Figure 8-10. JTAG Clock Input Timing Diagram
Input Setup Times:(3)
- Boundary-scan data
- TMS, TDI
tDVJH
tIVJH
4
0
-
-
ns
Input Hold Times:(3)
- Boundary-scan data
- TMS, TDI
tDXJH
tIXJH
15
12
-
-
ns
Valid Times:(4)
- Boundary-scan data
- TDO
tJLDV
tJLOV
-
-
4
4
ns
Output Hold Times:(4)
- Boundary-scan data
- TDO
tJLDV
tJLOV
25
12
-
-
ns
TCK to output high impedance:(4)(5)
- Boundary-scan data
- TDO
tJLDZ
tJLOZ
3
3
19
9
ns
Table 8-7. JTAG AC Timing Specifications (Independent of SYSCLK)(1) (Continued)
Parameter Symbol Min Max Unit
OVDD/2
Output Z0 = 50
RL = 50
TCLK VMVMVM
VM = Midpoint Voltage (OVDD/2)
tTCLK
tJR tJF
tJHJL
34
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Figure 8-11 provides the TRST timing diagram.
Figure 8-11. TRST Timing Diagram
Figure 8-12 provides the boundary-scan timing diagram.
Figure 8-12. Boundary-Scan Timing Diagram
Figure 8-13 provides the test access port timing diagram.
Figure 8-13. Test Access Port Timing Diagram
TRST
tTRST
VM = Midpoint Voltage (OVDD/2)
VM VM
VM
VM
TCK
Boundary
Data Inputs
Boundary
Data Outputs
Boundary
Data Outputs
VM = Midpoint Voltage (OVDD/2)
tDXJH
tDVJH
tJLDV
t
JLDZ
Output
Data
Valid
tJLDH
Output Data Valid
Input
Data Valid
TCK
TDI, TMS
TDO
TDO
VM
VM
tIXJH
tIVJH
tJLOV
tJLOZ
tJLOH
VM = Midpoint Voltage (OVDD/2)
Output
Data Valid
Input
Data Valid
Output Data Valid
35
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
8.2.2.1 JTAG Configuration Signals
Boundary scan testing is enabled through the JTAG interface signals. The TRST signal is optional in the
IEEE 1149.1 specification, but is provided on all processors that implement the Power Architecture.
While it is possible to force the TAP controller to the reset state using only the TCK and TMS signals,
more reliable power-on reset performance will be obtained if the TRST signal is asserted during power-
on reset. Because the JTAG interface is also used for accessing the common on-chip processor (COP)
function, simply tying TRST to HRESET is not practical.
The COP function of these processors allows a remote computer system (typically, a PC with dedicated
hardware and debugging software) to access and control the internal operations of the processor. The
COP interface connects primarily through the JTAG port of the processor, with some additional status
monitoring signals. The COP port requires the ability to independently assert HRESET or TRST in order
to fully control the processor. If the target system has independent reset sources, such as voltage moni-
tors, watchdog timers, power supply failures, or push-button switches, then the COP reset signals must
bemerged into these signals with logic.
The arrangement shown in Figure 8-14 on page 36 allows the COP port to independently assert
HRESET or TRST, while ensuring that the target can drive HRESET as well. If the JTAG interface and
COP header will not be used, TRST should be tied to HRESET through a 0 isolation resistor so that it
is asserted when the systemreset signal (HRESET) is asserted ensuring that the JTAG scan chain is ini-
tialized during power-on. While Freescale recommends that the COP header be designed into the
system as shown in Figure 8-14, if this is not possible, the isolation resistor will allow future access to
TRST in the case where a JTAG interfacemay need to be wired onto the system in debug situations.
The COP header shown in Figure 8-14 adds many benefits — breakpoints, watchpoints, register and
memory examination/modification, and other standard debugger features are possible through this inter-
face — and can be as inexpensive as an unpopulated footprint for a header to be added when needed.
The COP interface has a standard header for connection to the target system, based on the 0.025"
square-post 0.100" centered header assembly (often called a Berg header). The connector typically has
pin 14 removed as a connector key.
36
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Figure 8-14. JTAG Interface Connection
Notes: 1. RUN/STOP, normally found on pin 5 of the COP header, is not implemented on the PC755. Connect pin
5 of the COP header to OVDD with a 10 k pull-up resistor.
2. Key location; pin 14 is not physically present on the COP header.
3. Component not populated. Populate only if debug tool does not drive QACK.
4. Populate only if debug tool uses an open-drain type output and does not actively deassert QACK.
5. If the JTAG interface is implemented, connect HRESET from the target source to TRST from the COP
header though an AND gate to TRST of the part. If the JTAG interface is not implemented, connect
HRESET from the target source to TRST of the part through a 0 isolation resistor.
HRESET
From Target
Board Sources
13
SRESET
SRESET
NC
NC
11
VDD_SENSE
6
51
15
2k10 k
10 k
10 k
CHKSTP_IN
8TMS
TDO
TDI
TCK
9
1
3
4TRST
7
16
2
10
12
(if any)
COP Header
14 2
Key
10 k
10 k
10 k
10 k
QACK
QACK
CHKSTP_OUT
3
13
9
5
1
6
10
2
15
11
7
16
12
8
4
KEY
No pin
COP Connector
Physical Pin Out
10 k 4
HRESET
SRESET
OVDD
OVDD
OVDD
OVDD
OVDD
OVDD
OVDD
OVDD
CHKSTP_IN
TMS
TDO
TDI
TCK
QACK
TRST
CHKSTP_OUT
OVDD
OVDD
1
2k3
05
HRESET
10 k
37
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
The COP header shown in Figure 8-15 adds many benefits—breakpoints, watchpoints, register and
memory examination/modification and other standard debugger features are possible through this inter-
face – and can be as inexpensive as an unpopulated footprint for a header to be added when needed.
The COP interface has a standard header for connection to the target system, based on the 0.025”
square-post 0.100” centered header assembly (often called a “Berg” header). The connector typically
has pin 14 removed as a connector key.
Figure 8-15 shows the COP connector diagram.
Figure 8-15. COP Connector Diagram
There is no standardized way to number the COP header shown in Figure 8-15; consequently, many dif-
ferent pin numbers have been observed from emulator vendors. Some are numbered top-to-bottom then
left-to-right, while others use left-to-right then top-to-bottom, while still others number the pins counter
clockwise from pin one (as with an IC). Regardless of the numbering, the signal placement recom-
mended in Figure 8-15 is common to all known emulators.
The QACK signal shown in Table 8-7 on page 32 is usually hooked up to the PCI bridge chip in a system
and is an input to the PC755 informing it that it can go into the quiescent state. Under normal operation
this occurs during a low power mode selection. In order for COP to work the PC755 must see this signal
asserted (pulled down). While shown on the COP header, not all emulator products drive this signal. To
preserve correct power down operation, QACK should be merged so that it also can be driven by the PCI
bridge.
3
CKSTP_OUT
13 9 5 1
610 2
TOP VIEW
15 11 7
16 12 8 4
KEY
No pin
HRESET
SRESET
TMS
RUN/STOP
TCK
TDI
TDO
Ground
TRST
VDD_SENSE
Pins 10, 12 and 14 are no-connects.
Pin 14 is not physically present
QACK
CHKSTP_IN
38
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
9. Preparation for Delivery
9.1 Packaging
Microcircuits are prepared for delivery in accordance with MIL-PRF-38535.
9.2 Certificate of Compliance
e2v offers a certificate of compliances with each shipment of parts, affirming the products are in compli-
ance either with MIL-PRF-883 and guarantying the parameters not tested at temperature extremes for
the entire temperature range.
9.3 Handling
MOS devices must be handled with certain precautions to avoid damage due to accumulation of static
charge. Input protection devices have been designed in the chip to minimize the effect of static buildup.
However, the following handling practices are recommended:
1. Devices should be handled on benches with conductive and grounded surfaces
2. Ground test equipment, tools and operator
3. Do not handle devices by the leads
4. Store devices in conductive foam or carriers
5. Avoid use of plastic, rubber, or silk in MOS areas
6. Maintain relative humidity above 50 percent if practical
7. For CI-CGA packages, use specific tray to take care of the highest height of the package com-
pared with the normal CBGA
39
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
9.4 Clock Relationship Choices
The PC755’s PLL is configured by the PLL_CFG[0-3] signals. For a given SYSCLK (bus) frequency, the
PLL configuration signals set the internal CPU and VCO frequency of operation. The PLL configuration
for the PC755 is shown in Figure 10-2 on page 41 for example frequencies.
Notes: 1. PLL_CFG[0:3] settings not listed are reserved.
2. The sample bus-to-core frequencies shown are for reference only. Some PLL configurations may select bus, core, or VCO
frequencies which are not useful, not supported, or not tested for by the PC755; see “Clock AC Specifications” on page 25
for valid SYSCLK, core, and VCO frequencies.
3. In PLL-bypass mode, the SYSCLK input signal clocks the internal processor directly, the PLL is disabled, and the bus mode
is set for 1:1 mode operation. This mode is intended for factory use and emulator tool use only.
Note: The AC timing specifications given in this document do not apply in PLL-bypass mode.
4. In PLL off mode, no clocking occurs inside the PC755 regardless of the SYSCLK input.
Table 9-1. PC755 Microprocessor PLL Configuration
PLL_CFG [0-3]
Example Bus-to-Core Frequency in MHz (VCO Frequency in MHz)
Bus-to-Core
Multiplier
Core-to VCO
Multiplier
Bus 33
MHz
Bus 50
MHz
Bus 66
MHz
Bus 75
MHz
Bus 80
MHz
Bus 100
MHz
0100 2x 2x -----
200
(400)
1000 3x 2x - - 200
(400)
225
(450)
240
(480)
300
(600)
1110 3.5x 2x - - 233
(466)
263
(525)
280
(560)
350
(700)
1010 4x 2x - 200
(400)
266
(533)
300
(600)
320
(640)
400
(800)
0111 4.5x 2x - 225
(450)
300
(600)
338
(675)
360
(720) -
1011 5x 2x - 250
(500)
333
(666)
375
(750)
400
(800) -
1001 5.5x 2x - 275
(550)
366
5733° ---
1101 6x 2x 200
(400)
300
(600)
400
(800) ---
0101 6.5x 2x 216
(433)
325
(650) ----
0010 7x 2x 233
(466)
350
(700) ----
0001 7.5x 2x 250
(500)
375
(750) ----
1100 8x 2x 266
(533)
400
(800) ----
0110 10x 2x 333
(666) -----
0011 PLL off/bypass PLL off, SYSCLK clocks core circuitry directly, 1x bus-to-core implied
1111 PLL off PLL off, no core clocking occurs
40
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
The PC755 generates the clock for the external L2 synchronous data SRAMs by dividing the core clock
frequency of the PC755. The divided-down clock is then phase-adjusted by an on-chip delay-lock-loop
(DLL) circuit and should be routed from the PC755 to the external RAMs. A separate clock output,
L2SYNC_OUT is sent out half the distance to the SRAMs and then returned as an input to the DLL on
pin L2SYNC_IN so that the rising-edge of the clock as seen at the external RAMs can be aligned to the
clocking of the internal latches in the L2 bus interface.
The core-to-L2 frequency divisor for the L2 PLL is selected through the L2CLK bits of the L2CR register.
Generally, the divisor must be chosen according to the frequency supported by the external RAMs, the
frequency of the PC755 core, and the phase adjustment range that the L2 DLL supports. Figure 8-9 on
page 33 shows various example L2 clock frequencies that can be obtained for a given set of core fre-
quencies. The minimum L2 frequency target is 80 MHz.
Note: The core and L2 frequencies are for reference only. Some examples may represent core or L2 frequencies
which are not useful, not supported, or not tested for by the PC755; see “L2 Clock AC Specifications” on
page 28 for valid L2CLK frequencies. The L2CR[L2SL] bit should be set for L2CLK frequencies less than
110 MHz.
Table 9-2. Sample Core-to-L2 Frequencies
Core Frequency in MHz 1 1.5 2 2.5 3
250 250 166 125 100 83
266 266 177 133 106 89
275 275 183 138 110 92
300 300 200 150 120 100
325 325 217 163 130 108
333 333 222 167 133 111
350 350 233 175 140 117
366 366 244 183 146 122
375 375 250 188 150 125
400 400 266 200 160 133
41
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
10. System Design Information
10.1 PLL Power Supply Filtering
The AVDD and L2AVDD power signals are provided on the PC755 to provide power to the clock genera-
tion phase-locked loop and L2 cache delay-locked loop respectively. To ensure stability of the internal
clock, the power supplied to the AVDD input signal should be filtered of any noise in the 500 kHz to 10
MHz resonant frequency range of the PLL. A circuit similar to the one shown in Figure 10-2 using surface
mount capacitors with minimum Effective Series Inductance (ESL) is recommended. Consistent with the
recommendations of Dr. Howard Johnson in High Speed Digital Design: A Handbook of Black Magic
(Prentice Hall, 1993), multiple small capacitors of equal value are recommended over a single large
value capacitor.
The circuit should be placed as close as possible to the AVDD pin to minimize noise coupled from nearby
circuits. An identical but separate circuit should be placed as close as possible to the L2AVDD pin. It is
often possible to route directly from the capacitors to the AVDD pin, which is on the periphery of the 360
BGA footprint, without the inductance of vias. The L2AVDD pin may be more difficult to route but is pro-
portionately less critical.
Figure 10-1. PLL Power Supply Filter Circuit
10.2 Power Supply Voltage Sequencing
The notes in Figure 10-3 on page 43 contain cautions about the sequencing of the external bus voltages
and core voltage of the PC755 (when they are different). These cautions are necessary for the long term
reliability of the part. If they are violated, the ESD (Electrostatic Discharge) protection diodes will be for-
ward biased and excessive current can flow through these diodes. If the system power supply design
does not control the voltage sequencing, the circuit of Figure 10-3 can be added to meet these require-
ments. The MUR420 Schottky diodes of Figure 10-3 control the maximum potential difference between
the external bus and core power supplies on power-up and the 1N5820 diodes regulate the maximum
potential difference on power-down.
Figure 10-2. Example Voltage Sequencing Circuit
VDD AVDD (or L2AVDD)
10
2.2 µF 2.2 µF
GND
Low ESL Surface Mount Capacitors
3.3V 2.0V
MURS320
1N5820
MURS320
1N5820
42
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
10.3 Decoupling Recommendations
Due to the PC755’s dynamic power management feature, large address and data buses, and high oper-
ating frequencies, the PC755 can generate transient power surges and high frequency noise in its power
supply, especially while driving large capacitive loads. This noise must be prevented from reaching other
components in the PC755 system, and the PC755 itself requires a clean, tightly regulated source of
power. Therefore, it is recommended that the system designer place at least one decoupling capacitor at
each VDD, OVDD, and L2OVDD pin of the PC755. It is also recommended that these decoupling capacitors
receive their power from separate VDD, (L2)OVDD and GND power planes in the PCB, utilizing short
traces to minimize inductance.
These capacitors should have a value of 0.01 µF or 0.1 µF. Only ceramic SMT (surface mount technol-
ogy) capacitors should be used to minimize lead inductance, preferably 0508 or 0603 orientations where
connections are made along the length of the part.
In addition, it is recommended that there be several bulk storage capacitors distributed around the PCB,
feeding the VDD, L2OVDD, and OV vplanes, to enable quick recharging of the smaller chip capacitors.
These bulk capacitors should have a low ESR (equivalent series resistance) rating to ensure the quick
response time necessary. They should also be connected to the power and ground planes through two
vias to minimize inductance. Suggested bulk capacitors – 100-330 µF (AVX TPS tantalum or Sanyo
OSCON).
10.4 Connection Recommendations
To ensure reliable operation, it is highly recommended to connect unused inputs to an appropriate signal
level through a resistor. Unused active low inputs should be tied to OVDD. Unused active high inputs
should be connected to GND. All NC (no-connect) signals must remain unconnected.
Power and ground connections must be made to all external VDD, OVDD, L2OVDD, and GND pins of the
PC755.
10.5 Output Buffer DC Impedance
The PC755 60x and L2 I/O drivers are characterized over process, voltage, and temperature. To mea-
sure Z0, an external resistor is connected from the chip pad to (L2)OVDD or GND. Then, the value of each
resistor is varied until the pad voltage is (L2)OVDD/2 (See Figure 10-4 on page 43).
The output impedance is the average of two components, the resistances of the pull-up and pull-down
devices. When Data is held low, SW2 is closed (SW1 is open), and RN is trimmed until the voltage at the
pad equals (L2)OVDD/2. RN then becomes the resistance of the pull-down devices. When Data is held
high, SW1 is closed (SW2 is open), and RP is trimmed until the voltage at the pad equals (L2)OVDD/2. RP
then becomes the resistance of the pull-up devices.
NO TAG describes the driver impedance measurement circuit described above.
43
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 10-3. Driver Impedance Measurement Circuit
Alternately, the following is another method to determine the output impedance of the PC755. A voltage
source, Vforce, is connected to the output of the PC755 as in Figure 10-4. Data is held low, the voltage
source is set to a value that is equal to (L2)OVDD/2 and the current sourced by Vforce is measured. The
voltage drop across the pull-down device, which is equal to (L2)OVDD/2, is divided by the measured cur-
rent to determine the output impedance of the pull-down device, RN. Similarly, the impedance of the pull-
up device is determined by dividing the voltage drop of the pull-up, (L2)OVDD/2, by the current sank by
the pull-up when the data is high and Vforce is equal to (L2)OVDD/2. This method can be employed with
either empirical data from a test set up or with data from simulation models, such as IBIS.
RP and RN are designed to be close to each other in value. Then Z0 = (RP + RN)/2.
Figure 10-4 describes the alternate driver impedance measurement circuit.
Figure 10-4. Alternate Driver Impedance Measurement Circuit
(L2)OVDD
OGND
RP
RN
Pad
Data
SW1
SW2
(L2)OVDD
(L2)OVDD
BGA
Data
Pin
OGND
Vforce
44
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Table 10-1 summarizes the signal impedance results. The driver impedance values were characterized
at 0°C, 65°C, and 105°C. The impedance increases with junction temperature and is relatively unaf-
fected by bus voltage.
10.6 Pull-up Resistor Requirements
The PC755 requires pull-up resistors (1 k – 5 k) on several control pins of the bus interface to main-
tain the control signals in the negated state after they have been actively negated and released by the
processor or other bus masters. These pins are TS, ABB, AACK, ARTRY, DBB, DBWO, TA, TEA, and
DBDIS. DRTRY should also be connected to a pull-up resistor (1 k – 5 k) if it will be used by the sys-
tem; otherwise, this signal should be connected to HRESET to select NO-DRTRY mode.
Three test pins also require pull-up resistors (100 – 1 k). These pins are L1_TSTCLK, L2_TSTCLK,
and LSSD_MODE. These signals are for factory use only and must be pulled up to OVDD for normal
machine operation.
In addition, CKSTP_OUT is an open-drain style output that requires a pull-up resistor (1 k – 5 k) if it is
used by the system.
During inactive periods on the bus, the address and transfer attributes may not be driven by any master
and may, therefore, float in the high-impedance state for relatively long periods of time. Since the pro-
cessor must continually monitor these signals for snooping, this float condition may cause additional
power draw by the input receivers on the processor or by other receivers in the system. These signals
can be pulled up through weak (10 k) pull-up resistors by the system or may be otherwise driven by the
system during inactive periods of the bus to avoid this additional power draw, but address bus pull-up
resistors are not necessary for proper device operation. The snooped address and transfer attribute
inputs are:
A[0:31], AP[0:3], TT[0:4], TBST, and GBL.
The data bus input receivers are normally turned off when no read operation is in progress and, there-
fore, do not require pull-up resistors on the bus. Other data bus receivers in the system, however, may
require pull-ups, or that those signals be otherwise driven by the system during inactive periods by the
system. The data bus signals are: DH[0:31], DL[0:31], and DP[0:7].
If 32-bit data bus mode is selected, the input receivers of the unused data and parity bits will be disabled,
and their outputs will drive logic zeros when they would otherwise normally be driven. For this mode,
these pins do not require pull-up resistors, and should be left unconnected by the system to minimize
possible output switching.
If address or data parity is not used by the system, and the respective parity checking is disabled through
HID0, the input receivers for those pins are disabled, and those pins do not require pull-up resistors and
should be left unconnected by the system. If all parity generation is disabled through HID0, then all parity
checking should also be disabled through HID0, and all parity pins may be left unconnected by the
system.
Table 10-1. Impedance Characteristics. VDD = 2.0V, OVDD = 3.3V, Tc = 0 - 105°C
Impedance Processor bus L2 bus Symbol Unit
RN 25-36 25-36 Z0W
RP 26-39 26-39 Z0W
45
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
11. Package Mechanical Data
The following sections provide the package parameters and mechanical dimensions for the PC745, 255
PBGA package as well as the PC755, 360 CBGA and PBGA packages. While both the PC755 plastic
and the ceramic packages are described here, both packages are not guaranteed to be available at the
same time. All new designs should allow for either ceramic or plastic BGA packages for this device. For
more information on designing a common footprint for both plastic and ceramic package types, please
contact your local e2v sales office.
11.1 Package Parameters for the PC745
The package parameters are as provided in the following list. The package type is 21 × 21 mm, 255-lead
ball grid array (BGA).
Table 11-1. Package Parameters
Parameter HiTCE PBGA
Package outline 21 × 21 mm 21 × 21 mm
Interconnects 255 (16 × 16 ball array – 1) 255 (16 × 16 ball array – 1)
Pitch 1.27 mm (50 mil) 1.27 mm (50 mil)
Table 11-2. Package Type Parameters
Package code GH SH ZF
Solder spheres
composition Sn (10%) Pb (90%) Sn (96,5%) Ag (3%)
Cu (0,5%)
Sn (62%) Pb (36%)
Ag (2%)
RoHS No Yes No
Minimum module height 2,42 mm 2,02 mm 2,25 mm
Maximum module height 3,08 mm 2,68 mm 2,80 mm
Ball diameter (typical) 0,89 mm (25 mil) 0,75 mm (29,5 mil) 0,75 mm (29,5 mil)
46
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
11.1.1 Mechanical Dimensions of the PC745 HiTCE Package
Figure 11-1 provides the mechanical dimensions and bottom surface nomenclature of the PC745, 255
HiTCE package.
Figure 11-1. Mechanical Dimensions and Bottom Surface Nomenclature of the PC745 HiTCE (GH)
BC
255X
e
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A0.3
C0.15
b
Dim Min Max
A2.42 3.08
A1 0.8 1.0
A2 0.90 1.14
b0.82 0.93
D
D1
E
E1
e1.27 BSC
21.00 BSC
21.00 BSC
7.87
6.75
0.2
D
2X
A1 CORNER
E
0.2
B
A
C
0.2 C
E1
D1
A
A1
A2
1
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
4. Capacitor Pads may be unpopulated
Millimeters(1)
47
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 11-2. Mechanical Dimensions and Bottom Surface Nomenclature of the PC745 HiTCE RoHS (SH)
Solder spheres finishing:
1. Sn (10%) / Pb (90%)
2. Sn (96,5%) Ag (3%) Cu (0,5%)
BC
255X
e
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A0.3
C0.15
b
Dim
A
A1
A2
b
D
D1
E
E1
e
Min Max
2.02 2.68
0.46 0.6
0.90 1.14
0.6 0.93
1.27 BSC
21.00 BSC
21.00 BSC
7.87
6.75
0.2
D
2X
A1 CORNER
E
0.2
B
A
C
0.2 C
E1
D1
A
A1
A2
1
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
4. Capacitor Pads may be unpopulated
Millimeters(2)
48
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
11.1.2 Mechanical Dimensions of the PC745 PBGA Package
Figure 11-3 provides the mechanical dimensions and bottom surface nomenclature of the PC745, 255
PBGA package.
Figure 11-3. Mechanical Dimensions and Bottom Surface Nomenclature of the PC745 PBGA (ZF)
BC
255X
e
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A0.3
C0.15
b
Dim Min Max
A2.25 2.80
A1 0.50 0.70
A2 1.00 1.20
b0.60 0.90
D
D1
E
E1
e1.27 BSC
21.00 BSC
21.00 BSC
7.87
6.75
Millimeters
0.2
D
2X
A1 CORNER
E
0.2
B
A
C
0.2 C
E1
D1
A
A1
A2
1
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
4. Capacitor Pads may be unpopulated
(1)
49
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
11.2 Package Parameter for the PC755
The package parameters are as provided in the following list. The package type is 25 × 25 mm, 360-lead
ball grid array (BGA).
Table 11-3. Package Parameters
Parameter HiTCE-CBGA PBGA
Package Outline 25 mm × 25 mm 25 mm × 25 mm
Interconnects 360 (19 × 19 ball array – 1) 360 (19 × 19 ball array – 1)
Pitch 1.27 mm (50 mil) 1.27 mm (50 mil)
Table 11-4. Package Type Parameters
Package code GH/G SH PH ZF GS
Solder spheres
composition
Sn (10%)
Pb (90%)
Sn (96,5%)
Ag (3%)
Cu (0,5%)
Sn (96,3%)
Ag (3,7%)
Sn (62%)
Pb (36%)
Ag (2%)
Sn (10%)
Pb (90%)
RoHS compliant No Yes Yes No No
Minimum module
height 2,65 mm 2,32 mm 2,65 mm 2,22 mm 3,65 mm
Maximum module
height 3,2 mm 2,8 mm 3,2 mm 2,77 mm 4,2 mm
Ball diameter
(typical) 0,89 mm (35 mil) 0,75 mm (29,5 mil) 0,89 mm (35 mil) 0,75 mm (29,5 mil) 0,89 mm (35 mil)
50
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
11.2.1 Mechanical Dimensions of the PC755 PBGA Package
Figure 11-4 provides the mechanical dimensions and bottom surface nomenclature of the PC755, 360
PBGA package.
Figure 11-4. Mechanical Dimensions and Bottom Surface Nomenclature of the PC755 PBGA (ZF)
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
0.2
360X
D
2X
A1 CORNER
E
e
0.2
2X
B
A
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
b
C
0.2 C
171819
U
W
V
Milllimeters
DIM Min Max
A2.22 2.77
A1 0.50 0.70
A2 1.00 1.20
A3 —0.60
b0.60 0.90
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e1.27 BSC
E1
D1
A
A1
A2
A3
1
BC A0.3
C0.15
(1)
51
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
11.2.2 Mechanical Dimensions of the PC755 CBGA Package
Figure 11-5 provides the mechanical dimensions and bottom surface nomenclature of the PC755, 360
CBGA package.
Figure 11-5. Mechanical Dimensions and Bottom Surface Nomenclature of PC755 (CBGA) (G)
B
C
360X
e
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A0.3
C
0.15
b
A
A1
A2
C
C
171819
U
W
V
Millimeters
DIM Min Max
A2.65 3.20
A1 0.8 1
A2 1.10 1.30
A3 —0.60
b0.82 0.93
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e1.27 BSC
0.2
D
2X
A1 CORNER
E
0.2
2X
A
E1
D1
A3
1
0.15
B
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized feature with various
shapes. Bottom side A1 corner is designated with a ball
missing from the array
52
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
11.2.3 Mechanical Dimensions of the PC755 HiTCE Package
Figure 11-6 provides the mechanical dimensions and bottom surface nomenclature of the PC755, 360
HiTCE package.
Figure 11-6. Mechanical Dimensions and Bottom Surface Nomenclature of PC755 (HiTCE) (GH)
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
Millimeters
DIM Min Max
A2.65 3.24
A1 0.8 1
A2 1.10 1.30
A3
b
0.82
0.93
0.60
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e1.27 BSC
0.2
360X
D
2X
A1 CORNER
E
e
0.2
2X
B
A
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
b
C
0.15 C
171819
U
W
V
E1
D1
AA1
A2
A3
1
BC A0.3
C0.15
53
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Figure 11-7. Mechanical Dimensions and Bottom Surface Nomenclature of PC755 (HiTCE-RoHS) (SH)
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
Millimeters
DIM Min Max
A2.32 2.8
A1 0.46 0.6
A2 1.10 1.30
A3 —0.60
b0.6 0.93
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e1.27 BSC
0.2
360X
D
2X
A1 CORNER
E
e
0.2
2X
B
A
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
b
C
0.15 C
171819
U
W
V
E1
D1
AA1
A2
A3
1
BC A0.3
C0.15
54
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
Figure 11-8. Mechanical Dimensions and Bottom Surface Nomenclature of PC755 (HiTCE-RoHS) (PH)
Figure 11-9. Polymer Solder Spheres Composition
Notes:
1. Dimensioning and tolerancing per
ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized
feature with various shapes. Bottom side
A1 corner is designated with a ball missing
from the array
Millimeters
DIM Min Max
A2.65 3.24
A1 0.8 1
A2 1.10 1.30
A3
b
0.82
0.93
0.60
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e1.27 BSC
0.2
360X
D
2X
A1 CORNER
E
e
0.2
2X
B
A
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
b
C
0.15 C
171819
U
W
V
E1
D1
AA1
A2
A3
1
BC A0.3
C0.15
790 µm
Divinyl Benzene
Cu 20 µm
SnAg 30 µm
Package substrate
SAC 305
55
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
11.2.4 Mechanical Dimensions of the PC755 CI-CGA Package
Figure 11-10 provides the mechanical dimensions and bottom surface nomenclature of PC755, 360 CI-
CGA package.
Figure 11-10. Mechanical Dimensions and Bottom Surface Nomenclature of PC755 (CI-CGA) (GS)
B
C
360X
e
12345678910111213141516
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A0.3
C
0.15
b
A
A4
A2
171819
U
W
V
Millimeters
DIM Min Max
A4.08 BSC
A1
A2 1.10 1.30
1.545 1.695
A3 —0.60
b0.79 0.990
D25.00 BSC
D1 6.75
E25.00 BSC
E1 7.87
e
0.2
D
2X
A1 CORNER
E
0.2
2X
A
E1
D1
A3
A1
A6
A5
A4 0.82 0.9
A5 0.14 BSC
A6 0.25 0.35
1.27 BSC
B
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M, 1994
2. Dimensions in millimeters
3. Top side A1 corner index is a metalized feature with various
shapes. Bottom side A1 corner is designated with a ball
missing from the array
C
B0.15
56
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
12. Ordering Information
Figure 12-1. Ordering Information
Notes: 1. For availability of the different versions, contact your local e2v sales office.
2. The letter X in the part number designates a "Prototype" product that has not been qualified by e2v. Reliability of a PCX part-
number is not guaranteed and such part-number shall not be used in Flight Hardware. Product changes may still occur while
shipping prototypes.
xx y xx nnn E
Part
Identifier
745/755
Product
Code(1)
PC(X)(2)
Package(1) Max internal
processor speed(1) Revision
Level (1)
Temperature
Range TC/TJ(1)
x
Screening
Level
U: Upscreening Test
Blank: Standard E: Rev. 2.8
ZF: FC-PBGA
G: CBGA
GS: Ci-CGA
GH: HiTCE
SH: RoHS BGA
PH: RoHS BGA
Bus divider
(to be confirmed)
745
755 L
300
350
366
400
M: -55 C/+125 C
V: -40 C/+110 C
x
Process Descriptor
B: 300/350/366 MHz
C: 400 MHz
L: Any valid
PLL configuration
(MHz)
57
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
13. Definitions
13.1 Life Support Applications
These products are not designed for use in life support appliances, devices, or systems where malfunc-
tion of these products can reasonably be expected to result in personal injury. e2v customers using or
selling these products for use in such applications do so at their own risk and agree to fully indemnity e2v
for any damages resulting from such improper use or sale.
14. Document Revision History
Table 14-1 provides a revision history for this hardware specification.
Table 14-1. Revision History
Revision
Number Date Substantive Change(s)
0828J 05/2008
Added RoHS compliant version for both PC745 and PC755:
Added Table 11-1 on page 45 and Table 11-2 on page 45 presenting package parameter and solder
spheres composition for all package type for both PC745 and PC755 HiTCE products.
Added Figure 11-3 on page 48, Figure 11-8 on page 54 and Figure 11-10 on page 55: Mechanical
drawing of HiTCE RoHS version of both PC745/755
Added Figure 11-9 on page 54
Updated Figure 12-1 on page 56: Ordering information with HiTCE RoHS versions.
0828I 01/2008 Change A1 specification from 0.79/0.99 mm to 0.8/1 mm in Figure 11-5 on page 51 and Figure 11-7 on
page 53. Change TJ to TC on page 1 and 16.
0828H 02/2007 Name change from Atmel to e2v
2138G 04/2006 Increased power specification for 350 MHz full-power mode in Table 7-1 on page 23
Updated ordering information to new Template
2138F 05/2005
Added HiTCE package for Power Architecture 745
Removed phrase "for the ceramic ball grid array (CBGA) package" from Section 6.1.3 on page 19;
this information applies to devices in all packages
Figure 8-14 on page 36: updated COP Connector Diagram to recommend a weak pull-up resistor on TCK
2138E 10/2004 Product specification release subsequent to product qualification
Motorola changed to Freescale
2138D 06/2003 Preliminary β-site
i
0828J–HIREL–07/08
e2v semiconductors SAS 2008
PC755/745
Table of Contents
Features .................................................................................................... 1
Description ............................................................................................... 1
Screening ................................................................................................. 1
1 General Description ................................................................................. 2
1.1 Simplified Block Diagram .......................................................................................2
1.2 General Parameters ...............................................................................................3
1.3 Features .................................................................................................................3
2 Pin Assignments ...................................................................................... 6
2.1 Pinout Listings ........................................................................................................8
3 Signal Description ................................................................................. 13
4 Detailed Specifications ......................................................................... 14
5 Applicable Documents .......................................................................... 14
5.1 Design and Construction ......................................................................................14
5.1.1 Terminal Connections ...........................................................................14
5.1.2 Absolute Maximum Ratings(1) ................................................................14
5.1.3 Recommended Operating Conditions(1) ................................................16
6 Thermal Characteristics ........................................................................ 17
6.1 Package Characteristics .......................................................................................17
6.1.1 Package Thermal Characteristics for HiTCE .........................................17
6.1.2 Thermal Management Assistance .........................................................19
6.1.3 Thermal Management Information ........................................................19
6.1.4 Adhesives and Thermal Interface Materials ..........................................20
6.1.5 Heat Sink Selection Example ................................................................21
7 Power consideration ............................................................................. 22
7.1 Power management .............................................................................................22
7.2 Power Dissipation .................................................................................................23
8 Electrical Characteristics ...................................................................... 24
8.1 Static Characteristics ............................................................................................24
8.2 Dynamic Characteristics .......................................................................................24
8.2.1 Clock AC Specifications ........................................................................25
8.2.2 IEEE 1149.1 AC Timing Specifications .................................................32
ii
0828J–HIREL–07/08
PC755/745
e2v semiconductors SAS 2008
9 Preparation for Delivery ........................................................................ 38
9.1 Packaging .............................................................................................................38
9.2 Certificate of Compliance .....................................................................................38
9.3 Handling ...............................................................................................................38
9.4 Clock Relationship Choices ..................................................................................39
10 System Design Information .................................................................. 41
10.1 PLL Power Supply Filtering ................................................................................41
10.2 Power Supply Voltage Sequencing ....................................................................41
10.3 Decoupling Recommendations ..........................................................................42
10.4 Connection Recommendations ..........................................................................42
10.5 Output Buffer DC Impedance .............................................................................42
10.6 Pull-up Resistor Requirements ...........................................................................44
11 Package Mechanical Data ..................................................................... 45
11.1 Package Parameters for the PC745 ...................................................................45
11.1.1 Mechanical Dimensions of the PC745 HiTCE Package ......................46
11.1.2 Mechanical Dimensions of the PC745 PBGA Package .......................48
11.2 Package Parameter for the PC755 ....................................................................49
11.2.1 Mechanical Dimensions of the PC755 PBGA Package .......................50
11.2.2 Mechanical Dimensions of the PC755 CBGA Package ......................51
11.2.3 Mechanical Dimensions of the PC755 HiTCE Package ......................52
11.2.4 Mechanical Dimensions of the PC755 CI-CGA Package ....................55
12 Ordering Information ............................................................................. 56
13 Definitions .............................................................................................. 57
13.1 Life Support Applications ....................................................................................57
14 Document Revision History .................................................................. 57
Table of Contents ..................................................................................... i
0828J–HIREL–07/08
e2v semiconductors SAS 2008
Whilst e2v has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any
use thereof and also reserves the right to change the specific ation of goods without notice. e2v accepts no liability beyond that set out in its stan-
dard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accorda nce w ith inform a-
tion contained herein.
How to reach us
Home page: www.e2v.com
Sales offices:
Europe Regional sales office
e2v ltd
106 Waterhouse Lane
Chelmsford
Essex CM1 2QU
England
Te l: +44 (0)1245 493493
Fax:: +44 (0)1245 492492
E-Mail: enquiries@e2v.com
Europe Regional sales office
e2v sas
16 Burospace
F-91572 Bièvres
Cedex
France
Te l: +33 (0) 16019 5500
Fax: +33 (0) 16019 5529
E-Mail: enquiries-fr@e2v.com
Europe Regional sales office
e2v gmbh
Industriestraße 29
82194 Gröbenzell
Germany
Te l: +49 (0) 8142 41057-0
Fax:: +49 (0) 8142 284547
E-Mail: enquiries-de@e2v.com
Americas
e2v inc
4 Westchester Plaza
Elmsford
NY 10523-1482
USA
Tel: +1 (914) 592 6050 or
1-800-342-5338,
Fax: +1 (914) 592-5148
E-Mail: enquiries-na@e2v.com
Asia Pacific
e2v ltd
11/F.,
Onfem Tower,
29 Wyndham Street,Central,
Hong Kong
Tel: +852 3679 364 8/9
Fax: +852 3583 1084
E-Mail: enquiries-ap@e2v.com
Product Contact:
e2v
Avenue de Rochepleine
BP 123 - 38521 Saint-Egrève Cedex
France
Tel: +33 (0)4 76 58 30 00
Hotline:
std-hotline@e2v.com